Diffusion.docx
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Introduction High resistive materials are grown by using pure silicon. Outer atoms are mixed with lattice due to which materials are conductive and used for electronic applications .For the formation of electronic devices such as diodes integrated circuits all of them require inhomogeneous distribution of dopant Mechanisms of Diffusion in Solids There are various methods of diffusion that are discussed .When diffusion is caused by atoms from outside e.g hydrogen this is interstitial diffusion and no point defects are included .Intrinsic point defects are involved in indirect diffusion. In the given figures. Figure 1 and Figure 2 both describes vacancy and interstitial defects AV and AI are defects which occur due to coulomb attraction effect Fig 1 describe direct diffusion. fig 2 describe indirect diffusion. Ai, As ,V,I are due outer atoms
Transcript of Diffusion.docx
IntroductionHigh resistive materials are grown by using pure silicon. Outer atoms are mixed with lattice due to which materials are conductive and used for electronic applications .For the formation of electronic devices
such as diodes integrated circuits all of them require inhomogeneous
distribution of dopant
Mechanisms of Diffusion in SolidsThere are various methods of diffusion that are discussed .When diffusion is caused by atoms from outside e.g hydrogen this is interstitial diffusion and no point defects are included .Intrinsic point defects are involved in indirect diffusion. In the given figures. Figure 1 and Figure 2 both describes vacancy and interstitial defects AV and AI are defects which occur due to coulomb attraction effectFig 1 describe direct diffusion. fig 2 describe indirect diffusion. Ai, As ,V,I are due outer atoms
