Development of Electrochemical Machining (ECM) for Tungsten

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INSTITUTE FOR APPLIED MATERIALS - MATERIALS PROCESSES IAM-WPT | CORROSION DEPARTMENT www.kit.edu KIT – University of the State of Baden-Württemberg and National Research Center of the Helmholtz Association Development of Electrochemical Machining (ECM) for Tungsten J. Konys, W. Krauss, N. Holstein

Transcript of Development of Electrochemical Machining (ECM) for Tungsten

Page 1: Development of Electrochemical Machining (ECM) for Tungsten

INSTITUTE FOR APPLIED MATERIALS - MATERIALS PROCESSES IAM-WPT | CORROSION DEPARTMENT

www.kit.eduKIT – University of the State of Baden-Württemberg andNational Research Center of the Helmholtz Association

Development of Electrochemical Machining (ECM) for Tungsten

J. Konys, W. Krauss, N. Holstein

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2 W-Based Materials for Fusion Applications | UCSB, February 13-15, 2012

Contents:

Motivation for electrochemical machining (ECM)

Electrochemistry of tungsten

ECM of tungsten

S-ECM

C-ECM

Conclusions and recommendations

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Motivation for Electrochemical Processing (ECM) of TungstenTypical defects and failures in W parts by conventional machining

Primary machining defects

HHF results define needs for W-processing

Smooth surfacesNo defects from machiningNo sharp edges

Conventional machining is expensiveInnovative soft machining methods required

Crack growth at machining defect

Post HHF analyses of

mock-up EFREMOV.

Machining defect

caused failure

Mock up # 4

Secondary failures, growing under HHF load

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Electrochemical Reactins of TungstenW dissolution: EC oxidation

Basic Investigation

Anodic reactionW-dissolution

Application Cathodic reactionDeposition

Surface treatmentElectro-polishing,cleaning

Scale depositionbrazing e.g. W byNi protic

MachiningECM

Depositionaprotice.g. W or Ta

0,0001

0,001

0,01

0,1

1

10

100

1000

-0,75 -0,5 -0,25 0 0,25 0,5 0,75 1 1,25 1,5 1,75 2 2,25 2,5 2,75 3 3,25

E / V (Hg/HgSO4)

i /

mA

cm

-2

pH = 12,4

pH = 12

pH = 11

pH = 10

pH = 9

pH = 9

pH = 8

pH = 7

pH = 7

pH = 6

pH = 5

pH = 3

pH = 1

i = f(pH)

System: W / TCEE / Pt

v = 1 mV/s, 1000 U/min, d = 16 mm

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ECM Requirements

Electrolyte development

M-ECM: anode mask

process

C-ECM: cathode tool

ECM Advantages

No cracks by ECM

process

Surface polishing

residue-free metal

removal M-ECM for Slot array : UV-mask Novolak

cathode =

ECM working tool,

negative imagevertically mobile

anode = workpieceelectrolyte

agitation by microstep-motor

frameworkcathode guiding

++

--

C-ECM scheme

Processed workpiece

= ECM

Anode = workpiece

-

+

-

+

-

+

Cathode = ECM working tool

Anode = workpiece

--

++

--

++

--

++

C-ECM

2 H+ + 2e- → H2

Me → Me2+ + 2e-

MAIN DIFFERING FEATURES

M-ECM, S-ECM C-ECM

Technique Conventional installation Complex facility

Parameters Current x time = charge Charge + distance + steprate + convection

Cathode passive counter electrode active shaping component (by step motor)

Tool design 2-dim. mask (positive) 3-dim. electrode (negative)

Transformation +2-dim →+3-dim resp. +0-dim -3-dim → +3-dim

ECM for 3-D structuring | M-ECM => S-ECM + C-ECM

M-ECM

Mask processing UV-lithography Electrochemical Etching Structured workpiece

hn365 nm

++

--

M-ECM without resist masks = S-ECM

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ECM of W towards W/refractory-alloys

Dissolution ability of W-alloys by ECM electrolyte

-50

0

50

100

150

200

250

300

350

400

450

500

550

-1 -0,8 -0,6 -0,4 -0,2 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3

E / V (Hg/HgSO4)

i /

mA

cm

-2

W, pH = 12

WL10, pH = 12

Mo, pH = 12 b

Ta, pH = 12

Al, pH = 12

i = f(pH)

System: Me / 1,25 M N+NH3 / Pt

Me = W, Wla10, Mo, Ta, Al

v = 1 mV/s, 1000 U/min

Mo improves machinability / dissolution rate

Stable oxide forming elements (Ta) are less favorable for the electrolyte N-NH3

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Electrochemistry of tungstenInvestigation and development of ECM electrolytes

W0 -> W6+

tungsten metal

H HO

H H

H He-

e-

H HOH H

tungsten metal

OO

O W

O

O W

WO3 WO3 WO3 WO3 WO3WW

H+ H+

H+ H+ H+

H+H+

SEM0,0001

0,001

0,01

0,1

1

10

100

1000

-0,5 -0,25 0 0,25 0,5 0,75 1 1,25 1,5 1,75 2 2,25 2,5

Potential E [V vs. NHE]

i [m

Ac

m-2

]

pH = 12

pH = 11

pH = 10

pH = 9

pH = 8

pH = 7

pH = 6

pH = 3

pH = 1

Linear Scanning Voltametry (LSV)

Sytem: W / TCEE / Pt

Scan rate: 1 mV/sec

W + 3 H2O → WO3 + 6 H+ + 6 e-

W → W3+ + 3 e-

Does not take place !!!

H HO

H H

tungsten metal

OO

O W

O

O W

WO3 WO3 WO3 WO3 WO3WW

H-H

-

H H

tungsten metal

W W

WO42-

H-

H-

WO42-

WO42-

WO42-

Electrochemical investigations: Potentiostatic Linear Scanning Voltammetry

W + 2 H2O + 2 OH-→ WO42- + 6 H+ + 6 e-

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Electrochemical Tungsten Processing S-ECMS-ECM of surfaces

…on EDM-cut rod pieces

W as machined

S-ECM 15 min, 400 mA/cm2

In SEM

In SEMVIS

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Electro-chemical tungsten processing S-ECMS-ECM of surfaces

Single crystal pieces

Mechanical mirror

polishing

S-ECM, rising current densities

elaboration on z-orientation

Effect on sc-orientation: parameters of S-ECM mirror polishing

on one orientation cannot be applied unchanged to other orientation

Wittmann‘sche Etching structures rough, without any reflection Plain, partial reflection Plain, black = total reflection

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-50

0

50

100

150

200

250

300

350

400

450

500

1 10 100 1000 10000 100000

Frequency /Hzd

elt

a

%

delta upper gap width

delta ground width

delta flank width

HF-Pulses in ECM of tungsten

Dependencies of measures from frequence

Extrapolation to HF = 00

Extrapoliert

depth

upper gap width

Flank width

ground gap width

Development of techniques to

generate high HF currents

C-ECM of tungsten Impact of pulse current effects

νννν = 10 Hz

pH = 10

0,4 mm

νννν = 1 kHz

pH = 10

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C-ECM of tungstenFabrication of 3-dim demonstrators

Parallel grooved structure Angled structures

Tool Tool

Cathode tool

Cathodic potential: no corrosion + mechanically contactless - no pressure

Working tool (every material, every design, every current) without any chemical,

elctrochemical,thermal, mechanical abrasion

TOOLS

Demonstrators:

Generated W-structures

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12 W-Based Materials for Fusion Applications | UCSB, February 13-15, 201212 | J. Konys | IMF III/KOR | 10.03.2009

Anodic dissolution by ECM

Hz: 10000 1000 500 100 10 0

C-ECM:

Edge steepness as

Function of

pulse frequency νDesired

flank

profile

-1100

-1000

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-800

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-500

-400

-300

-200

-100

0

100

200

300

-2500250500750100012501500175020002250250027503000Abstand AE-GE / µµµµm

E / m

V (

Hg/H

gS

O4)

200 mA/cm2

100 mA/cm2

150 mA/cm2

50 mA/cm2

E = d(AE-GE)

System: W / SL1 / Pt

i = 200 mA/cm2, 1500 U/min, d0 = 3 mm

0,0001

0,001

0,01

0,1

1

10

100

1000

-0,5 -0,25 0 0,25 0,5 0,75 1 1,25 1,5 1,75 2 2,25 2,5Potential E [V vs. NHE]

i [m

Acm

-2]

pH = 12

pH = 11

pH = 10

pH = 9

pH = 8

pH = 7

pH = 6

pH = 3

pH = 1

Linear Scanning Voltametry (LSV)

Sytem: W / TCEE / Pt

Scan rate: 1 mV/sec

Quality improvement

W ���� WL 10, WTaMoX

Higher frequency of pulsed DC powerMobility control / reduction

Conductivity of electrolyte

Parameter dependencies

Smaller distance

tool – work piece

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Development of C-ECM tool for shaping

of micro-structured workpieces:

e.g. Castellation:

6-fold star,

Projected depth 6 mm, width 0,1 mm;

aspect ratio = 60

Design of cathode tool and

facility for castellation-shaping

C-ECM Castellation tool

Castellation cathode tool:

first prototype (brass foils)

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C-ECM European Patent EP 467

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Conclusions

Electro-Chemical Machining (ECM) of tungsten:

W can be successfully machined by ECM without chemical passivation

Three ECM branches selected for special applications (S-ECM, C-ECM M-ECM)

ECM shows strong dependency on DC pulse frequency and gap distance

High frequency technology in DC pulses is required for good accuracy

S-ECM can polish and optimize fine structured surfaces

Demonstrators fabricated by S-ECM and C-EC

MGeneral statement :

ECM is a well investigated technology for tungsten

Achievements (work progress) in agreement with work plan

ECM has an established status for industrial W-shaping

Achieved technical status allows tt to industrial scale, AND /OR….

Achieved patent EP 467 allows commercial exploitation

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Open questions

Actual and future work:

Accuracy improvement by high frequency (> 10 kHz range)

Analyses of conductivity impact on long range dissolution suppression

Application of not symmetrically pulse pause ratios of DC profiles

Investigations of new non-aqueous electrolyte systems (e. g. EMIM, IL)

Analyses of ECM application to W-Ta by improved electrolytes

Response / needs from discussions with industry

Testing of newest electro-mechanical tools and forced flow

Electrolyte regeneration

Integration of industries into ECM of W under patent application