Development and Test of High-Temperature Piezoelectric...

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DEVELOPMENT AND TEST OF HIGH-TEMPERATURE PIEZOELECTRIC WAFER ACTIVE SENSORS FOR STRUCTURAL HEALTH MONITORING Yuanye Bao Thesis Prepared for the Degree of MASTER OF SCIENCE In Engineering Technology UNIVERSITY OF NORTH TEXAS December 2014 APPROVED: Haifeng Zhang, Major Professor Seifollah Nasrazadani, Committee Member Shuping Wang, Committee Member

Transcript of Development and Test of High-Temperature Piezoelectric...

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DEVELOPMENT AND TEST OF HIGH-TEMPERATURE PIEZOELECTRIC WAFER

ACTIVE SENSORS FOR STRUCTURAL HEALTH MONITORING

Yuanye Bao

Thesis Prepared for the Degree of

MASTER OF SCIENCE

In Engineering Technology

UNIVERSITY OF NORTH TEXAS

December 2014

APPROVED:

Haifeng Zhang, Major Professor

Seifollah Nasrazadani, Committee Member

Shuping Wang, Committee Member

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Bao, Yuanye. Development and Test of High-Temperature Piezoelectric Wafer Active

Sensors for Structural Health Monitoring. Master of Science (Engineering Systems-Mechanical

Systems), December 2014, 48 pp., 2 tables, 32 figures, references, 45 titles.

High-temperature piezoelectric wafer active sensors (HT-PWAS) have been developed

for structure health monitoring at hazard environments for decades. Different candidates have

previously been tested under 270 °C and a new piezoelectric material langasite (LGS) was

chosen here for a pilot study up to 700 °C. A preliminary study was performed to develop a high

temperature sensor that utilizes langasite material. The Electromechanical impedance (E/M)

method was chosen to detect the piezoelectric property. Experiments that verify the basic

piezoelectric property of LGS at high temperature environments were carried out. Further

validations were conducted by testing structures with attached LGS sensors at elevated

temperature. Additionally, a detection system simulating the working process of LGS monitoring

system was developed with PZT material at room temperature. This thesis, for the first time, (to

the best of author’s knowledge) presents that langasite is ideal for making piezoelectric wafer

active sensors for high temperature structure health monitoring applications.

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Copyright 2014

By

Yuanye Bao

©2014, All rights Reserved

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ACKNOWLEDGEMENTS

My first and sincere appreciation goes to Dr. Haifeng Zhang, my supervisor, for all

I have learned from him and for his continuous help and support in all stages of this

thesis. He is a great mentor, with both strong theory background and great hands-on skills.

I would also like to thank him for being an open person to ideas, and for encouraging and

helping me to shape my interest and ideas.

I would like to express my deep gratitude and respect to Dr. Seifollah Nasrazadani

and Dr. Shuping Wang for providing important feedback and advice on my research work

along the way. Their attitude to research inspires me greatly and encourages as well.

In addition, my greatest appreciation goes to all the faculty and staff in the

Engineering Technology Department for their great invaluable assistance to my study.

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TABLE OF CONTENTS

ACKNOWLEDGEMENTS ................................................................................................. i

LIST OF FIGURES ........................................................................................................... iv

LIST OF TABLES ............................................................................................................ vii

1. INTRODUCTION ................................................................................................ 1

1.1 Motivation of Studying Structural Health of Engineering Structures .................. 1

1.2 What is Structural Health Monitoring? ................................................................. 2

1.3 Application of Piezoelectric Material in SHM ..................................................... 3

2. PROBLEM STATEMENT ................................................................................... 5

3. LITERATURE REVIEW ..................................................................................... 7

3.1 Piezoelectric Material ........................................................................................... 7

3.2 Langasite (LGS) Crystal ..................................................................................... 10

3.3 PZT Crystal ......................................................................................................... 11

3.4 Piezoelectric Wafer Active Sensors .................................................................... 13

3.5 Lamb Waves ....................................................................................................... 15

3.6 The Electromechanical Impedance Method ........................................................ 16

3.7 State of the Art: High Temperature PWAS ........................................................ 18

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4. EXPERIMENT SETUP AND PROCEDURES ................................................. 20

4.1 Specimen Preparation ......................................................................................... 20

4.2 Tests of LGS HT-PWAS .................................................................................... 22

4.2.1 Test of Free LGS HT-PWAS Instrumented in High-temperature

Environment ...................................................................................................... 22

4.2.2 Test of Free LGS after Exposure in High Temperature environment . 24

4.2.3 Test of HT-PWAS Attached onto the Ti plate .................................... 24

4.3 PWAS Array Monitoring System based on PZT ................................................ 26

4.3.1 Lamb Wave Experiments on Thin Plates ............................................ 27

4.3.2 Crack Detection with PZT ................................................................... 30

5. EXPERIMENT RESULT ................................................................................... 33

5.1 Tests of HT-PWAS ............................................................................................. 33

5.2 PWAS Array Monitoring System based on PZT ................................................ 36

5.2.1 Lamb Wave Experiments on Thin Plates ............................................ 36

5.2.2 Crack Detection with PZT ................................................................... 37

6. CONCLUSION ................................................................................................... 41

7. REFERENCES ................................................................................................... 43

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LIST OF FIGURES

Figure 1. Direct piezoelectric effect. ........................................................................... 8

Figure 2. Indirect piexoelectric effect. ........................................................................ 8

Figure 3. Effect of AC field on a piezoelectric material. ............................................ 9

Figure 4. Perovskite structure ................................................................................... 10

Figure 5. Typical Langasite crystal ........................................................................... 11

Figure 6. Structure of PZT ........................................................................................ 13

Figure 7. Piezoelectric active sensor interaction with host structure: (a) PZT wafer

affixed to the host structure; (b) Interaction forces and moments. ................... 15

Figure 8. Lamb wave propagating in plate: (a) symmetric; (b) anti-symmetric. ...... 16

Figure 9. E/M coupling model between a PZT transducer and the structure ........... 17

Figure 10. Langasite Sample ..................................................................................... 20

Figure 11. Ti plate with 1mm thickness and 100 mm diameter ................................ 21

Figure 12. LGS sensor .............................................................................................. 22

Figure 13. Setup of free LGS HT-PWAS instrumented in high-temperature

environment ...................................................................................................... 23

Figure 14. High temperature oven and LGS sample ................................................. 24

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Figure 15. LGS HT-PWAS attached to Ti plate ....................................................... 26

Figure 16. Setup of Lamb Wave experiment ............................................................ 28

Figure 17. PWAS on 2D structure ............................................................................ 28

Figure 18. Simulation of PWAS interactions with Lamb modes .............................. 29

Figure 19. The manually signal switch ..................................................................... 29

Figure 20. Oscilloscope and function generator ....................................................... 30

Figure 21. Setup of crack detection system by PZT array ........................................ 31

Figure 22. PZT array ................................................................................................. 31

Figure 23. Illustration of wave reflection to locate crack ......................................... 32

Figure 24. E/M impedance of free LGS in furnace ................................................. 33

Figure 25. Test of Free LGS after exposure to high temperature ............................. 34

Figure 26. Enlarged view of E/M impedance after exposure to high temperature ... 34

Figure 27. E/M spectrum of LGS attached to Ti plate .............................................. 35

Figure 28. Comparison of E/M impedance between free sample and bonded sample

at RT.................................................................................................................. 36

Figure 29. Linear regression of Time of Flight ......................................................... 37

Figure 30. Time of flight on crack detection test ...................................................... 38

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Figure 31. Example of location detected by PZT array ............................................ 39

Figure 32. Visible result of location and shape detected by PZT array .................... 40

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LIST OF TABLES

Table 1. Dimensions of LGS samples. ...................................................................... 20

Table 2. Pulse-echo signals of Lamb Wave .............................................................. 37

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1. INTRODUCTION

1.1 Motivation of Studying Structural Health of Engineering Structures

Engineering structures, including bridges, buildings, dams, pipelines, aircrafts, and ships,

among others, are complex engineered systems that contribute to the economic and industrial

prosperity of nations. Engineers strive to standardize building codes and create methodologies to

design safe structures for public use. During the design stage, engineers rely on creating models

of these structures to obtain knowledge of their structural behaviors. Normally, engineers rely on

modeling techniques to obtain knowledge of the structural behaviors during the design stage.

Different experimental and numerical approaches with ideal assumptions have been adopted

during design. Since all these structures and systems are designed based on loading and material

properties, these structures should be stable when in service. However, these structures, which

are designed to hold critical weight with marginal safety factors, may fail if they are subjected to

unpredicted loads. In addition, structures are often subjected to the unanticipated interaction of

harsh loading scenarios and severe environmental conditions will result in long-term structural

deterioration. For all these situations, a routine inspection schedule has been devised so that any

damage can be repaired before the failure. Therefore, methods of monitoring and assessing

structure and systems must be devised in order to ensure the safe operation of a structure (Lynch

and Loh, 2006). The engineering community has been aggressively pursuing novel sensing

technologies and analytical methods that can be used to rapidly identify the onset of structural

damage in an instrumented structural system (Liu and Tomizuka, 2003a, 2003b). Generally,

there are four key multidisciplinary areas: Structural Health Monitoring (SHM), Condition

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Monitoring (CM), Non-Destructive Evaluation (NDE), and Statistical Process Control (SPC)

(Worden and Dulieu-Barton, 2004).

The industry of monitoring and assessing structural damage has grown considerably in

recent years. For example, the United States spends more than $200 billion each year on the

maintenance of airplane equipment and facilities. Maintenance and repairs represent about a

quarter of commercial aircraft operating costs. Out of approximately 576,600 bridges in the U.S.

national inventory, about a third are either ‘structurally deficient’ and in need of repairs, or

‘functionally obsolete’ and in need of replacement. The rising costs associated with the aging

infrastructure have become an ongoing concern. SHM is an area of growing technical and

scientific interest and worthy of new and innovation approaches. SHM may alleviate this by

replacing scheduled maintenance with as-needed maintenance, thus saving the cost of

unnecessary upkeep. In addition, for aging infrastructures, installed structural health monitoring

systems could ensure increased safety and reliability. And for new structures, the inclusion of

structural health monitoring sensors and systems from the design stage is likely to greatly reduce

the life cycle cost (Giurgiutiu, 2007).

1.2 What is Structural Health Monitoring?

SHM is a method of determining the health of a structure from the reading of an array of

permanently attached sensors that are embedded into the structure and monitored over time.

SHM assesses the health of the structure through appropriate data processing and interpretation,

which may predict the remaining life of the structure. The prediction result may contribute to the

future decision about the installed structure. Nowadays, many structures are at or beyond their

design life; however, it is envisioned that they will remain in service for an extended period.

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SHM is one of the enabling technologies that will make this possible. It addresses the problem of

aging structures which is a major concern of the engineering community and costumers. SHM

has been widely adapted on different types of structure. Especially during these past decades, the

construction as well as mechanical industry has been developing at a rapid speed, which raises

the demand of various infrastructures ranging from bridges to skyscrapers.

SHM can be performed in basically two ways, passive and active. Passive SHM consists of

monitoring a number of parameters (loading stress, environment action, performance indicators,

acoustic emission from cracks, etc.) and inferring the state of structural health from a structural

model. Passive SHM uses passive sensors that only “listen” but do not interact with the structure.

Therefore, they do not provide direct measurement of the damage presence and intensity. In

contrast, active SHM performs proactive interrogation of the structure, detects damage and

determines the state of structural health from the evaluation of damage extent and intensity.

Active SHM uses active sensors that interact with the structure and thus determine the presence

or absence of damage. Both ways aim at performing a diagnosis of the structural safety and

health, to be followed by a prognosis of the remaining life (Liu and Giurgiutiu, 2005).

1.3 Application of Piezoelectric Material in SHM

Sensors are the main component to SHM; and typically-used sensors are optical fibers,

electrical resistance strain gauges, and acoustic devices. Recently, small and lightweight

piezoelectric wafer active sensors (PWAS), permanently attached to the structure are used to

transmit and receive waves to detect the presence of cracks, corrosion, and other structural

defects. Demonstrating active SHM technologies with PWAS are useful for buildings as well as

mechanical components. Various SHM technologies with piezoelectric material have been

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adapted in different areas to gather the defect information from structures. Defects and damages

can be found on critical structures before fractures occur. Crawley and Luis (1987) presented the

use of piezo-ceramic wafers as elements of intelligent structures. Dimitriades et al. (1991),

D’Cruz (1993) and Zhou et al. (1996) used piezoelectric wafers to produce structural excitation

and Banks (1996) developed experiments using PZT wafer for both excitation and sensing the

free decay response. Wang and Chen (2000) proposed the use of a PZT wafer to excite the

structure and an array of PVDF film sensors to gather vibration response to generate the

frequencies and mode shapes. Giurgiutiu (2002, 2003, 2004) reported embedded ultrasonic

structural radar with PZT for aging aircraft and thin-wall structures. Park et al. (2006) identified

degradation of the mechanical/electrical properties of a PZT transducer and the bonding defects

between a PZT patch and a host structure. Qing et al. (2008) presents an active SHM system with

piezoelectric sensors for liquid rocket engines which were exposed to flight vibration and shock

environments under cryogenic temperatures. Olson (2007) reported the beam forming of lamb

waves for structural health monitoring.

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2. PROBLEM STATEMENT

Within a growing number of high-technology industries, there is an increasing demand of

sensors capable of operating in high temperature environments to monitor structures. Those high

temperature environments occur in industries like those that employ such components as turbine

engines, high speed drilling heads, and combustion chambers. Critical engine parts sustain

temperatures up to 700°C, speeds up to 20,000 rpm, high vibration loads, and significant foreign

damage potential (Hudak, et al., 2004). The structural health of these high temperature

components is important for safety and can reduce the cost of inspection as well. For example,

the rapid assessment of structures for rockets is essential to reduce the time to vessel

maintenance and accelerate the schedule of turnaround launches. The active SHM principles

could be applied for detection and monitoring of critical thermal protection system damage, if

the sensors could survive the harsh temperature environment.

Many ferroelectrics become conductive at high temperatures, leading to charge drifts and

partial losses of signal. The conductivity problem is aggravated during operation in an

atmosphere with low oxygen content, in which many oxygen-containing ferroelectrics may

rapidly loose oxygen and become semi-conductive. Also, the temperature variation may produce

piezoelectric charges, which may interfere with the piezoelectric effect. In our study, we

investigated the available literature in order to identify piezoelectric compositions that could be

used to construct high-temperature piezoelectric wafer active sensors (HT-PWAS). Considering

the availability, we chose Langasite (LGS) which has high Curie temperature to fabricate HT-

PWAS in this study.

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In this thesis, a preliminary study is presented to identify the possibility of developing HT-

PWAS transducers with LGS for in-situ detection of damage state in structural materials

subjected to harsh environments. In addition, a detection system has been developed to locate the

crack to show the possible application of this type of sensor. Although the purpose is to design a

system with LGS material, the difficulty to set up this experiment brings us to a more operable

idea to verify the feasibility. A system based on Lamb Wave propagation utilizing a PZT sensors

array embedded onto the structure and electronic modules for signal reception, processing, and

interpretation will be used to detect health information under low room temperature. Combining

detection system with high temperature piezoelectric property of LGS, the feasibility to fabricate

sensors with LGS under high temperature will be validated. This methodology can bring about a

new approach to monitoring high temperature structures.

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3. LITERATURE REVIEW

3.1 Piezoelectric Material

Dielectric materials that belong to the class of noncentro-symmetric crystals are classified

as piezoelectric materials. When these materials are subjected to an external electric field, there

will be asymmetric displacements of anions and cations that cause considerable net deformation

of the crystal. The resulting strain is directly proportional to the applied electric field unlike

electro-strictive materials. The strain in a piezoelectric material is extensive or compressive,

depending on the polarity of the applied field. This effect is called the piezoelectric effect, or to

be more precise, indirect piezoelectric effect.

Piezoelectric materials exhibit another unique property: when they are subjected to external

strain by applying pressure/stress, the electric dipoles in the crystal get oriented such that the

crystal develops positive and negative charges on opposite faces, resulting in an electric field

across the crystal. This is exactly the reverse of the above mentioned indirect piezoelectric effect.

Jaques and Pierri Curie first observed this effect in quartz crystals in 1880 and called this

piezoelectricity: "piezo” meaning pressure. The effect is called the direct piezoelectric effect.

The direct and indirect piezoelectric effects are illustrated in Fig. 1 and 2. In the direct

effect, when a poled piezoelectric material is subjected to tensile stress, in the poling direction, a

positive voltage is generated across the faces. When the material is subjected to compressive

stress in this direction, a negative voltage is generated across the faces (Fig. 1c). In the indirect

effect, when an external voltage is applied to the material, the material gets extended if the

polarity of the voltage is the same as that of the field applied during poling (Fig. 2b) and, when

the voltage is applied in the reverse direction, the material gets compressed (Fig. 2c).

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Figure 1. Direct piezoelectric effect: a) Poled piezoelectric material; b) When tensile stress is

applied to the material, the material develops voltage across its face with the same polarity as the

poling voltage; c) When a compressive stress is applied to the material, the material develops

voltage with polarity opposite to that of poling voltage.

Figure 2. Indirect piexoelectric effect: a) Poled piezoelectric material; b) When a DC field is

applied with the same polatity as the poling field, the material develops tensile strain; c) When a

DC field is applied in the reverse direction, the material develops compressive strain.

Figure 3 shows the effect of an alternating field on a poled piezoelectric material. The

alternating field causes the material to extend and contract alternately at the same frequency as

the applied field. The vibration produces an acoustic field (sound or ultrasonic field) in the

vicinity of the material. This effect is used for the generation of acoustic fields. In the reverse

way, piezoelectricity can generate energy by forced vibration active by acoustic wave.

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Figure 3. Effect of AC field on a piezoelectric material: a) Poled piezoelectric material; b) AC

field is applied to the material. The material gets extended alternately: that is, the material vibrate

producing an acoustic in the vicinity.

The direct and the indirect piezoelectric effects have many applications as the effects

involve conversion of mechanical energy into electrical energy and vice versa. The applications

include generation and detection of ultra- sonic waves, pressure sensors, and actuators.

Ultrasonic is extensively used both in the engineering and medical fields. In engineering, it is

used in nondestructive testing of materials (NDT), underwater acoustics (SONAR), ultrasonic

drilling, energy harvesting, etc., and in medical fields, it is used for diagnosis (sonography),

therapy (drug delivery), and surgery. As sensors and actuators, they have a wide variety of

applications in both engineering and medical fields (Vijaya, 2012).

These materials are usually ceramics with a perovskite structure (Fig. 4). The Perovskite

structure exists in two crystallographic forms. Below the Curie temperature they have a

tetragonal structure, and above the Curie temperature they transform into a cubic structure. In the

tetragonal state, each unit cell has an electric dipole, i.e. a small charge differential exists

between each end of the unit cell.

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Figure 4. Perovskite structure (a) tetragonal perovskite structure below the Curie temperature and

the (b) cubic structure above the Curie temperature. (Courtesy of www.azom.com)

3.2 Langasite (LGS) Crystal

LGS is considered the ‘high temperature brother of quartz.’ It shows remarkable thermal

stability at high temperatures. Furthermore, it displays no pyroelectric effect and no outgassing.

The crystal of LGS belongs to a rhombohedral system with the space group P321. A sample of

langasite crystal is shown as Fig. 5. The lattice constants are a=58.162 Å and c=55.087 Å. This

crystal is characterized by the La3Ga5SiO14, in which there are four kinds of cations named A, B,

C, and D, i.e., A3BC3D2O14. In this formula, the A and B represent a decahedral site coordinated

by eight O atoms and an octahedral site by six O atoms, respectively. The C and D represent

tetrahedral sites coordinated by four O atoms. The size of the C site is slightly larger than that of

the D site. In the crystal of LGS, La atoms place at the A sites. Ga atoms occupy the B and C

sites and half of the D sites. Si atoms are put at half of the D sites. There are two layers

perpendicular to the c axis: one is composed of the decahedra at A sites and the octahedra at B

sites and the other of the tetrahedra at C and D sites. The LGS crystal is formed by heaping the

two layers in the direction along the c axis alternatively (Kaminskii, et.al., 1983).

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Figure 5. Typical Langasite crystal (Courtesy of http://www.cradley-

crystals.com/CCinit.php?id=productsg_2)

3.3 PZT Crystal

Lead zirconium titanate, also called PZT, is an intermetallic inorganic compound with the

chemical formula Pbx(ZrTi)1-xO3 (0≤x≤1). It is a ceramic perovskite material that shows a

piezoelectric effect, which finds practical applications in the area of electro-ceramics. When fired,

PZT has a Perovskite crystal structure, each unit of which consists of a small tetravalent metal

ion in a lattice of large divalent metal ions. In the case of PZT, the small tetravalent metal ion is

usually titanium or zirconium. The large divalent metal ion is usually lead. Under conditions that

confer a tetragonal or rhombohedral symmetry on the PZT crystals, each crystal has a dipole

moment. PZT is a metallic oxide based piezoelectric material developed by scientists at the

Tokyo Institute of Technology around 1952. PZT ceramic is used in a wide variety of

applications. Soft PZT ceramic powders are typically used when high coupling and/or high

charge sensitivity are important, such as in flow or level sensors; ultrasonic nondestructive

testing/evaluation (NDT/NDE) applications; or for accurate inspections of automotive, structural

or aerospace products. Generally, PZT characteristics include a high dielectric constant, high

coupling, high charge sensitivity, high density with a fine grain structure, a high Curie point, and

a clean, noise-free frequency response (APC Int., Ltd).

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However, this commonly used piezoelectric material does have some disadvantages. The

environmental and health hazards of lead are well-known and recycling and disposal of devices

containing lead-based piezoelectric materials is of great concern, especially those used in

consumer products such as cars, sound systems, and medical devices. Thus, interest is high for

development of lead-free piezoelectric materials that are biocompatible and environmentally

friendly. Another issue is the need for piezoelectric ceramics suitable for high temperature

operations because PZT cannot be used above 260 °C in extremely high temperature. Although

different piezoelectric materials have been actively researched, based on Perovskite structures,

none of these piezoelectric material types is ready to replace the PZT-based materials. Moreover,

the processing and properties of new piezoelectric materials under different conditions of

pressure, frequency, and temperature are not well understood compared to PZT systems. Due to

the lack of comparable alternative materials, PZT is still the most used material for electronic

components and devices (YTC America Inc.). Figure 6 shows the structure of PZT under and

above Curie temperature, in detail.

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Figure 6. Structure of PZT: Ti and Zr ions in center of perovskite unit displace above the Curie

temperature, inducing polarity (Courtesy of

http://www.ytca.com/lead_free_piezoelectric_ceramics)

3.4 Piezoelectric Wafer Active Sensors

Piezoelectric Wafer Active Sensors (PWAS) are small, nonintrusive, inexpensive

piezoelectric wafers that are intimately affixed to the structure and can actively interrogate the

structure. PWAS have wide-band capabilities which can be wired into sensor arrays and

connected to data concentrators and wireless communicators (Giurgiutiu, Zagrai, and Bao, 2004).

PWAS have captured the interest of both academia and industry because of their low cost, small

invasiveness, and dual action (emission and reception) capability. The general constitutive

equations of linear piezoelectric materials given by ANSI/IEEE Standard 176-1987 (IEEE

Standard on Piezoelectricity), describe a tensorial relation between mechanical and electrical

variables in the form:

(1)

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where is the mechanical compliance of the material measured at zero electric field (E=0),

is the dielectric permittivity measured at zero mechanical stress (T=0), and is the

piezoelectric coupling between the electrical and mechanical variables. Figure 7 (a) shows an

active sensor consisting of a Lead Zirconate Titanate (PZT) piezoceramic wafer affixed to the

structural surface. In this configuration, mechanical stress and strain are applied in the 1 and 2

directions, i.e. in the plane of the surface, while the electric field acts in the 3 direction, i.e.,

normal to the surface. Hence, the significant electro-mechanical couplings for this type of

analysis are the 31 and 32 effects. The application of an electric field, E3, induces surface strains,

S11 and S22, and vice-versa. As the PZT sensor is activated, interaction forces and moments

appear as Fig. 7(b) (Giurgiutiu, Zagrai, and Bao., 2004).

PWAS transducers can serve several purposes (Giurgiutiu, 2006a, 2006b, 2007, 2008): (a)

high bandwidth strain sensors; (b) high-bandwidth wave exciters and receivers; (c) resonators; (d)

embedded modal sensors with the electromechanical (E/M) impedance method. The PWAS

transducers have various modes of operation: (i) active sensing of far-field damage using pulse-

echo, pitch-catch, and phased array methods, (ii) active sensing of near-field damage using high

frequency E/M impedance method and thickness-gage mode, and (iii) passive sensing of

damage-generating events through detection of low-velocity impacts and acoustic emission at the

tip of advancing cracks. Damage detection using PWAS phased arrays can detect both broadside

and offside cracks independently with scanning beams emitting from a central location

(Giurgiutiu, 2011).

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Figure 7. Piezoelectric active sensor interaction with host structure: (a) PZT wafer affixed to the

host structure; (b) Interaction forces and moments.

3.5 Lamb Waves

The theory of Lamb Waves was originally developed in 1916 to describe the characteristics

of waves propagating in plates by Horace Lamb. Lamb Waves (guided plate waves) are a type of

ultrasonic waves that remain guided between two parallel free surfaces, such as the upper and

lower surfaces of a plate or shell. They are similar to longitudinal waves, with compression and

rarefaction and exist in thin wall structures with free boundaries causing a wave-guide effect

which is particularly useful for investigating damage in plate and shell structures. For a plate

which has a thickness of the order of a wavelength or so, surface Rayleigh waves degenerate into

Lamb Waves (Viktorov, 1967). Lamb Waves can propagate in infinite number of modes, either

(a) symmetric (S) or (b) anti-symmetric (A) as Fig. 8. The wave velocity depends on the product

of frequency and material thickness. Investigations on Lamb and leaky Lamb Waves have been

carried out continuously since their discovery and experimentally for a variety of applications,

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ranging from seismology, to ship construction industry, to acoustic microscopy, and to

nondestructive testing and acoustic emission. Extensive developments in the applications of

Lamb Waves provide a foundation for the inspection of many industrial products in aerospace,

pipe, and transportation. The generation of lamb waves can be performed using contact

transducers, optical, electromagnetic, magnetostrictive, and air coupled transducers.

Figure 8. Lamb wave propagating in plate: (a) symmetric; (b) anti-symmetric.

3.6 The Electromechanical Impedance Method

Electromechanical impedance method was pioneered by Liang et al., Liang, C., Sun, F.P.,

and Rogers, C.A. (1994). Subsequently, several authors used the E/M impedance method for

structural health monitoring, by comparing the impedance frequency spectra of various pristine

and damaged structures. The method has been shown to be especially effective at ultrasonic

frequencies, which properly capture the changes in local dynamics due to incipient structural

damage. Such changes are too small to affect the global dynamics and hence cannot be readily

detected by conventional low frequency vibration methods. The name Electro–Mechanical (E/M)

Impedance Method was first used by Giurgiutiu and Rogers (1997). Novel ways to interpret the

E/M impedance spectra and identify structural damage have been explored by others

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investigators. The fundamental of E/M impedance method is based on the piezoelectric effect

which is the property that can convert mechanical energy into electrical energy or in the reverse

way. When a piezoelectric transducer is bonded with the monitored structure, the interaction

between the mechanical impedance of the host structure and the electrical impedance of the

transducer will occur which could be an indicator of the health of the structure. Therefore, the

changes in the mechanical impedance of the host structure by some damage such as cracks as

well as corrosion could be detected by measuring the electrical impedance of the transducer

(Cawley, 1984, Liang, Sun, and Rogers, 1994). Typically, the identification and quantification of

the damage is done through metric indexes by comparing two impedance signatures where one

of these is obtained when the structure is considered healthy and used as reference, commonly

used as baseline (Baptista, and Inman, 2011).

Figure 9. E/M coupling model between a PZT transducer and the structure

Figure 9 is the typical setup of E/M impedance method in which a PZT wafer is axially

connected to a single degree-of-freedom spring-mass-damper system represented for the

structural impendence (Giurgiutiu, and Rogers, 1998). Through the mechanical coupling

between the transducer and the tested structure and electro-mechanical transduction inside the

transducer, the structural impedance gets reflected in the electric signal at the transducer

terminals as:

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( ) (

( )

( ) ( )

) (2)

where ( ) is the electric impedance computed as the ratio between the input voltage and the

output current of the PZT wafer (Hu, 2012).

3.7 State of the Art: High Temperature PWAS

In recent years, several investigators have explored the generation and detection of

structural waves with piezoelectric wafer active sensors (PWAS). Most of the methods used in

conventional NDE, such as pitch-catch, pulse echo, and phased arrays, have also been

demonstrated experimentally with PWAS. These successful experiments have positioned PWAS

as an enabling technology for the development and implementation of active SHM systems.

PWAS are inexpensive, nonintrusive, unobtrusive, and minimally invasive. They can be surface-

mounted on existing structures, inserted between the layers of lap joints, or placed inside

composite materials. Since the PWAS system works well at RT environment, the demands of

high temperature applications could also be met by bringing in a novel high temperature material.

Developments in piezoelectric materials have brought forward classes of materials that

preserve their piezoelectric properties at elevated temperatures. There are several requirements

that must be rigorously addressed when considering piezoelectric materials for high-temperature

applications (Damjanovic, 1998, Tuner, Fuierie, Newnham, and Shrout, 1994). The Curie

transition temperature must be well above the operating temperature; otherwise, the piezoelectric

material may depolarize under combined temperature and pressure conditions. The thermal

energy causes displacement of domain walls, leading to the large power dissipation and

hysteretic behavior, especially when temperature is close to the Curie transition temperature.

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However, former work all focus on SHM for structures at normal temperatures with PWAS. In-

situ SHM for structures in high temperature environments is extremely challenging due to the

low phase transition temperature normal material (like PZT) has, at which, the PZT will lose its

piezoelectricity and not function as normal. For example, PZT cannot be used for the in-situ

SHM for thermal protection system (TPS) of future high speed aerospace vehicle in AFRL (Air

Force Research Laboratory)’s integrated vehicle health management system, as the surface

temperature is extremely high (~1000 ºC) (Rosenstengel, et al., 2004). One possible way to

implement the PWAS for SHM of TPS is to attach the PZT sensors to the cool side of the

backing structure; however, this will cause the inevitable complexity of indirect actuation and

sensing. A promising approach to address the difficulties for high temperature SHM is to use

high temperature piezoelectric material to make the PWAS; for instance, in a recent work,

Giurgiutiu (2002) has performed a preliminary test using GaPO4 as the PWAS for SHM

application.

In this thesis, we proposed a preliminary study with the main purpose of identifying the

possibility of developing PWAS transducers with a new high temperature piezoelectric material-

Langasite (LGS) for in situ interrogation of damage state in structural materials at high

temperature environments.

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4. EXPERIMENT SETUP AND PROCEDURES

4.1 Specimen Preparation

A sample of LGS is cut into a thin, rectangular wafer (Fig. 10), and the dimensions are

shown in Table 1. The material orientation is YXL θ=75° and the sensor is operating at thickness

shear mode. The averaged dimensions used in the calculation were measured at five different

points with an electric caliper. The surface of this wafer has been coated by gold as electrodes.

Table 1. Dimensions of LGS samples.

Dimension Sample

Length (mm) 8.570

Width (mm) 8.550

Thickness (mm) 0.550

Figure 10. Langasite Sample

A Ti round plate was used as the host structure with 1mm thickness and 100 mm diameter

as shown in Fig. 11. The reason to use Ti plate as tested substrate is that they can survive well at

the high temperature range (Donachie, and Matthew, 1988).

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Figure 11. Ti plate with 1mm thickness and 100 mm diameter

PZT sensors will be used to design monitoring system with 0.254 mm thickness and 6.5

mm diameter shown in Fig. 12. As we can see, this PZT sensor is small and two surfaces are

coated as electrodes. According to the literature, the PZT transducers must be small enough not

to be intrusive in the host structure (Park and Inman, 2007). Generally, it is recommended that

the PZT patches have diameters ranging from 5 to 15 mm and thickness from 0.1 to 0.3 mm

(Yan and Chen, 2010). It is also important to consider the relationship between the size of the

transducer and the bond layer. Referring to J. Sirohi (2000) and G. Park (2006), these issues

related to bonding layer are expected to be more significant as the dimension of the transducer

increases. Basically, the electromechanical coupling with the PZT transducer is most efficient if

the host structure is thin enough to act as a plate when its size matches a half-wavelength in the

propagation medium. Referring to this, a thin aluminum plate as 800 x 604 x 0.96mm will be

used as substrate. In the meantime, cracks will be made on this plate to test the detection system.

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Figure 12. LGS sensor

4.2 Tests of LGS HT-PWAS

Since we are going to validate the high temperature property of LGS, an experiments with

three steps needs to be conducted. During these tests, the piezoelectric property in high

temperature environment will be measured by E/M impedance method. This section contains

three parts test for LGS as follows and these steps will be conducted for LGT as well.

4.2.1 Test of Free LGS HT-PWAS Instrumented in High-temperature Environment

The first step is going to prove that langasite wafer sensor could maintain its

piezoelectricity while being exposed to high temperatures. The principles of the E/M impedance

method are as follows: when excited by an alternating electric voltage, a piezoelectric sensor acts

as an E/M resonator converting electrical energy into acoustic mechanical energy back and forth

through the piezoelectric effect (Liang, et al., 1994). The E/M spectrums obtained by E/M

analyzer show spectral peaks will disappear if the sensors are made by traditional piezoelectric

material such as PZT at extreme temperature environment. Here, the specimen will be heated in

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oven and the E/M impedance spectrum will be obtained to verify that LGS could survive at high

temperatures.

Figure 13 shows the experimental setup for these tests. Since the experiment is operating

under high temperature, both the glue and connected wire have to survive up to 700 °C. To

satisfy this requirement, platinum wire (World Precision Instruments Inc.) and high temperature

conductive glue PryoDuct597A (Aremco Inc.) were used. The oven temperature was gradually

increased from room temperature (RT) up to 700 °C in 100 °C steps. The E/M impedance

spectrum was measured while the HT-PWAS was remaining in the oven. Figure 14(a) shows the

box oven (model ST- 1200C) made by Sentro Tech Corp. which can provide high temperature

environment up to 1200 °C and Fig. 14(b) shows the Langasite sample attached with platinum

wire by conductive glue in oven.

Figure 13. Setup of free LGS HT-PWAS instrumented in high-temperature environment

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Figure 14. High temperature oven and LGS sample

4.2.2 Test of Free LGS after Exposure in High Temperature environment

As a sensor to continuously monitor the structure integrity, the sensor will not only work

during high temperature environments continuously, but also should work after cooling down.

The properties need to be stable during the change of temperature to make sure the E/M

impedance will not ‘die out’ after exposure to high temperature. For the langasite wafer, the E/M

impedance will be measured after exposure from room temperature to high temperature.

Additionally, the E/M impedance spectrum was measured after cooling down for 30 minutes at

each temperature, and the procedure was repeated up to 700 °C. Two results from these two steps

will be compared with each other at elevated temperature to demonstrate the high temperature

property.

4.2.3 Test of HT-PWAS Attached onto the Ti plate

For industrial application, a HT-PWAS sensor is not just of the piezoelectric material but

the whole transducer system consisting of piezoelectric material, electrodes, adhesive, wire, and

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connections. In order to achieve successful high-temperature performance, all these components

must work together in the hazard environment with the structure. Instrumentation of structural

specimens with HT-PWAS involves several specific aspects including (a) selection of

appropriate instrumentation wires, (b) connection of the signal and ground wires to the HT-

PWAS electrodes and to the specimen, and (c) selection of the appropriate adhesive for bonding

the HT-PWAS to the high-temperature structure (Giurgiutiu, 2010). It was found that none of the

polymeric adhesives, copper wire, and tin solder used in the conventional PWAS installations

could be used for high-temperature applications. All the piezoelectric material, the electrodes,

the wire, the wire/electrode connection, the bonding layer between the HT-PWAS and the

structural substrate, and the HT-PWAS grounding must all survive under elevated temperature

environment which is fundamental for the sensor. What’s more, in order to ensure in situ

durability, the coefficients of thermal expansion of the piezoelectric, electrode materials, and

bonded layer must be close; otherwise, the structure cannot survive after cyclic high-temperature

exposure.

In order to obtain the high temperature performance when the sensor is bonded with a

structure, the Ti plate mentioned before is used as the substrate. Since the sensor needs to be

attached on the structure, Cotronics 989, an adhesive designed for ceramic at high temperature

by Cotronics Corp., appears to be a good choice. The setup is shown in Fig. 15. The LGS sensor

is bonded with Ti plate in the center with non-conductive adhesive Cotronics 989. In the

meantime, the electrode is also connected with the Ti plate as ground by conductive adhesive

PryoDuct597A. This setup works well after cyclic high temperature exposure based on the close

thermal expansion coefficients of piezoelectric material, bond layer and structure.

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Figure 15. LGS HT-PWAS attached to Ti plate

4.3 PWAS Array Monitoring System based on PZT

The former steps will give the expression of basic piezoelectric property for LGS under

high temperature environment. If this material can survive at this hazard environment, the

coming subject is on how to use LGS to fabricate a monitoring system. An experiment with two

steps based on PZT will be conducted in this section to simulate a system at RT. If the LGS has

clear piezoelectric resonant ‘peaks’ under high temperature, then it could be designed as a

similar monitoring system for high temperature application, as PZT at RT environment.

This PWAS monitoring system is based on lamb waves mentioned in Section 3.5.

According to the ability of long-distance transmission and high sensitivity to both the surface and

the internal defects, Lamb Waves have been adapted for active SHM applications. Since the

Time of Flight (TOF) is always used as the damage detection method based on spatial reciprocity

and time invariance of linear wave equations, the velocity of Lamb wave needs to be determined

as a baseline. So, in Section 4.3.1, a pulse-echo experiment with be conducted first to get the

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velocity for the experiment to follow next. Further, the monitoring system will be set to detect

the location of the crack in Section 4.3.2.

4.3.1 Lamb Wave Experiments on Thin Plates

This particular part is designed to measure the Lamb Wave velocity in this thin structure. A

0.96mm thick, aluminum alloy plate (800 x 604 x 0.96mm) is instrumented with an array of 5

PZT wafer active sensors whose dimension is 0.254 mm thickness and 6.5 mm diameter. Sensors

are attached to the plate by tape with honey in between to help transfer the signal in. All these

sensors located in different areas of the plate will generate different electric responses. The setup

is shown in Fig. 16. Sensor Number 1 will be used as generator to generate a 300 KHz, 10 cycles

burst excitation with a 10 HZ repetition rate to activate the rest of these sensors. Digital signal of

this burst wave is generated by function generator Agilent 33220A (Agilent Inc.). Under this

burst excitation, the activated sensor, Number 1 will generated a package of elastic waves that

spread out into the whole plate as shown in Fig. 17 and 18. All sensors are connected to a

manually controlled switch to a transfer signal, as Fig. 19 displays. An amplifier is used inside

the switch to be a buffer. A Tektronix TDS3054 (by Tektronix Inc.) four-channel digital

oscilloscope is used to gather the response data from sensors through the switch. In the meantime,

the oscilloscope is synchronized with the signal generator to collect the excitation signal, as well.

During the test, the oscilloscope channels switched among these remaining four active sensors to

gather the digital which can reflect the Time of Flight (TOF) of waves in the structure. A Matlab

program is developed to do the regression to calculate the speed. The scilloscope and the

function generator used in this experiment are given in Fig. 20.

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Figure 16. Setup of Lamb Wave experiment

Figure 17. PWAS on 2D structure

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Figure 18. Simulation of PWAS interactions with Lamb modes: (a) symmetric Lamb mode and

(b) anti-symmetric Lamb mode.(Giurgiutiu, 2003)

Figure 19. The manually signal switch

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Figure 20. Oscilloscope and function generator

4.3.2 Crack Detection with PZT

Figure 21 shows all the connections of the crack detection experiment. A small hole is

manufactured on one side of the aluminum plate to simulate a crack on a normal thin wall

structure like a wing of an airplane. The hole with 2 mm radius is placed away from the edge and

a linear crack is made, as well, to test the further function of the designed system. An array

consists four pieces PZT sensors is put in the center of plate to detect the location of the crack

(Fig. 22). One sensor is used as an actuator to generate excitation as before and three sensors are

used to collect digital signals from the switch and transferring them to the oscilloscope,

Tektronix TDS3054. The excitation from Agilent 33220A is a 300 KHz burst wave with 10

cycles. The methodology is shown in Fig. 23 which is based on the Lamb Wave propagation and

reflection.

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Figure 21. Setup of crack detection system by PZT array

Figure 22. PZT array

By following Fig. 23, the TOFs of Lamb Waves and their reflection can be detected to

measure the distance from the actuator to the crack as well as the sensor to the crack. Based on

abundant TOF data, the calculation can be given to locate where the crack is.

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Figure 23. Illustration of wave reflection to locate crack

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5. EXPERIMENT RESULT

5.1 Tests of HT-PWAS

Figure 24 shows the measurement result of the LGS PWAS exposed to high temperature

environment. It is clear that the LGS PWAS maintains its piezoelectricity well at high

temperature up to 700° C. From amplitude decrease of peaks, we can see, the piezoelectric

activity is still influenced by the high temperature for LGS.

Figure 24. E/M impedance of free LGS in furnace

Figure 25 and 26 show the spectrum of E/M impedance for test of free LGS after exposure

to high temperatures from room temperature to 700° C. Compared to the result from Fig. 24, this

E/M impedance spectrum has no significant difference on the location of the peaks as well as

their amplitudes. The test proves the LGS sensor can work continuously in high temperature

environments.

1.4 1.6 1.8 2 2.2 2.4 2.6 2.80

5

10

15

20

25

Frequency (MHz)

Rea

l (Z,

O

hms)

26°C

100°C

300°C

500°C

700°C

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Figure 25. Test of Free LGS after exposure to high temperature

Figure 26. Enlarged view of E/M impedance after exposure to high temperature

1.4 1.6 1.8 2 2.2 2.4 2.6 2.80

5

10

15

20

25

Frequency (MHz)

Re

al (Z

, O

hm

s)

25°C

100°C

300°C

500°C

700°C

2.2 2.25 2.3 2.35

7

8

9

10

11

12

13

14

15

Frequency (MHz)

Re

al (Z

, O

hm

s)

26°C

100°C

300°C

500°C

700°C

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Figure 27 shows the E/M impedance spectrum of LGS attached to a Ti plate, from which

the peaks are clearly observed. These clear ‘peaks’ show that this sensor is able to transmit

signals when it is attached to a structure in high temperature environment and the spectrum can

be used as a baseline to determine the health condition of a bonded structure. From Fig. 27 & 28,

the location of each peak change after attached to Ti plate, and some peaks are not as clear as

lower temperature. This phenomenon implies although the material can work under this high

temperature, the property of whole system might be influenced by other factors like the thermal

coefficient difference among these components. Also, from this spectrum, the piezoelectric

signal is not strong as the free sample. The bonded layer may affect the function of the sensor.

Figure 27. E/M spectrum of LGS attached to Ti plate

1.4 1.6 1.8 2 2.2 2.4 2.6 2.80

5

10

15

20

25

Frequency(MHz)

Rea

l(Z

,Oh

ms

)

26 °C

300 °C

700 °C

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Figure 28. Comparison of E/M impedance between free sample and bonded sample at RT

5.2 PWAS Array Monitoring System based on PZT

5.2.1 Lamb Wave Experiments on Thin Plates

During these Lamb Wave test, the propagation time and length are captured by an

oscilloscope, as shown in Table 2. Five different locations have been tested by sensors to get

different TOFs. Various data can increase the reliability and also reduce the effect of

heterogeneity of the aluminum plate.

These echoes are processed to calculate the propagation speed; in the meantime, it also can

be verified that Lamb Wave can transfer through the whole plate which is the fundamental of the

next section on crack detection. A liner regression is made in Fig. 29 which is the plot of TOF vs.

its path length. Since the norm of residual is small, the conclusion can be drawn that the Lamb

2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.555

10

15

Real(

Z,O

hm

s)

2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.550

5

10

15

Real(

Z,O

hm

s)

Frequency(MHz)

Free sample at RT

Sample bonded on Ti plate at RT

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Wave speed is stable at 5.35 km/s which is close to theoretical value 5.44 km/s (Giurgiutiu,

2002).

Table 2. Pulse-echo signals of Lamb Wave

Label 1 2 3 4 5

TOF(Micro-second) 40 54 65 86 95

Length (mm) 215 290 353 463 508

Figure 29. Linear regression of Time of Flight

5.2.2 Crack Detection with PZT

Wave propagation test proves that PWAS is able to generate and collect wave signal

efficiently. A crack detection system with PZT will show the feasibility to design sensors with

40 50 60 70 80 90 100200

250

300

350

400

450

500

550

Time (Micro-second)

Le

ng

th (

mm

)

y = 5.3*x + 2.9

TOF

linear

Norm of residuals=4.149

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PWAS. Combining with the high temperature piezoelectric property test, the proposed idea, to

design a hign temperature crack detection system with LGS can be finally validated.

Figure 30 shows a plot with three groups of Voltage vs TOF data. The first signal is from

the function generator, which is same as the actuator excitation. The second and third singals are

from the sensors, which show the interaction of differnent waves. According to the waveforms,

three critical TOFs have been used in calculation to locate the crack. The actuator-to-crack–

crack-to-sensor TOFS are 60.0 and 62.1 micro-seconds. Based on the velocity of wave, the

location of the crack is calculated by Matlab and given in Fig. 31. The differences between

present result and real location of crack, in x-axis and y-axis are both less than 1%.

Figure 30. Time of flight on crack detection test

Also, it is clear that the wave energy decreases amply from Fig. 30 during the propagation,

and the signal/noise ratio is getting smaller which should draw attention during future application.

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Figure 31. Example of location detected by PZT array

Since the location of one point can be detected as the process shown before, the size and

shape could also be measured by multiple tests in different locations. And the coming result

shown in Fig. 32 is a typical result of linear crack on this aluminum plate. This result is

calculated by eight time test data.. And the differences in the location, width and length of this

crack are all smaller than 0.2 mm. As shown in Fig. 32, the blue points are the results from the

test, which can reflect the outline of the crack and the black line shows the real boundary of the

crack.

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Figure 32. Visible result of location and shape detected by PZT array

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6. CONCLUSION

This thesis is exploratory in nature with the main purpose of identifying the possibility of

developing PWAS transducers for high-temperature applications, and the methodology has been

verified indirectly through a two-part experiment which proves the feasibility of the material as

well as the detection system.

From the present results, this work reaches its objective that shows LGS remains active at

the tested high temperatures, which reached up to 700°C. Based on the result of our experiment,

LGS maintains its piezoelectric properties at up to 700°C, which is much higher than the

maximum working temperature of conventional PZT, around 260 °C. According to this, LGS

can be considered as a good candidate for the fabrication of high temperature piezo-wafer active

sensors. During the experiment, it was found that the high temperature wire which transfers the

electric signals is sensitive and may influence the system function. The sensor needs to be glue-

bonded onto the structure, so the selection of adhesive and its properties can also affect the

experiment data. Comparing to the free sensor, the bonding layer may be the reason which cause

the loss of activity of the sensor. In addition, since the surface of the sensor is fragile and easily

breakable, future work should also aim at developing more reliable high-temperature bonding

agents and surface electrodes.

Since the LGS sensor works well in high temperature environment, a detection system

simulating the working process of LGS monitoring system was developed with PZT material at

room temperature. According to the result from Section 5.2, the feasibility of LGS monitoring

system has been verified. An accurate algorithm should be generated and adapted to increase the

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42

accuracy of dimensions of crack. The details of the crack or damage can provide more

information to evaluate the life or the safety of the bonded structure.

As America’s infrastructure continues to age and deteriorate, finding suitable methods for

SHM becomes increasingly imperative. Generally, this study promotes and demonstrates a basic

idea which will be useful for the proper design and application of high temperature transducers

with LGS. This research needs to be followed by additional works to investigate the detail

behaviors of LGS sensor as well as SHM system.

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