Developing Nanostructured Inorganic-Organic Hybrid Semiconductors for Optoelectronic Applications...

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Developing Nanostructured Inorganic-Organic Developing Nanostructured Inorganic-Organic Hybrid Semiconductors for Optoelectronic Applications Hybrid Semiconductors for Optoelectronic Applications Jing Li, Rutgers University New Brunswick, DMR 0706069 Jing Li, Rutgers University New Brunswick, DMR 0706069 Activities and Findings Synthesized the first perfectly ordered crystal lattice of semiconductor quantum dots, In 2 Te 3 (trien). Discovered and characterized a number of low band gap hybrid semiconductors based on III-VI and V-VI binary and I-III-VI and I-V-VI ternary compounds that are potentially useful for photovoltaic and thermoelectric applications. Continued to modify and optimize the structure and composition of M 2 Q 2 (ba) type double-layer hybrid structures to enhance their white light emission properties. Publications Huang, X.-Y., Li, J. et. al. , Angew. Chem. 2009, 48, 7871. Li, J.; Huang, X.-Y. in Oxford Handbook of Nanoscience and Technology: Frontiers and Advances , Oxford University Press, ISBN: 978-0-19- 953305-3, 2010. Danilovic, D.; Hamida, Y.; Yuen, T. Li, J.; J. Appl. Phys. 2010, 107, 09E153-1-3. Wu, M.; Li, J. et. al. Chem. Comm., 2010, 46, 1649. Ki, W., Li, J. et. al. J. Mater. Chem. Accepted. Yao, H.B.; Zhang, X.; Wang, X.L.; Yu, S.H.; Li, J.; Chem. Mater. Submitted. Banerjee, D. kim, S.J. Wu, H.H.; Li, J. Inorg. Chem. Submitted. Li, J.; Huang. X. US Patent, E041427, 2010. Intellectual Merit Intellectual Merit Top: Construction of small band gap In 2 Te 3 quantum dots (~1.2 nm) in solid state. We demonstrate here the first perfectly ordered semiconductor QD crystal lattice. Bottom-Left: Optical absorption spectra of the parent structure In 2 Te 3 and the hybrid In 2 Te 3 (L). A blue shift of ~1.8 eV is observed. Bottom-Right: Largely enhanced quantum efficiency of white light emission of hybrid [Zn 2 S 2-2x Se 2x (ba)] systems. In 2 Te 3 (L) In 2 Te 3 QY:~15%

Transcript of Developing Nanostructured Inorganic-Organic Hybrid Semiconductors for Optoelectronic Applications...

Page 1: Developing Nanostructured Inorganic-Organic Hybrid Semiconductors for Optoelectronic Applications Jing Li, Rutgers University New Brunswick, DMR 0706069.

Developing Nanostructured Inorganic-OrganicDeveloping Nanostructured Inorganic-OrganicHybrid Semiconductors for Optoelectronic ApplicationsHybrid Semiconductors for Optoelectronic Applications

Jing Li, Rutgers University New Brunswick, DMR 0706069Jing Li, Rutgers University New Brunswick, DMR 0706069

Activities and Findings

• Synthesized the first perfectly ordered crystal lattice of semiconductor quantum dots, In2Te3 (trien).

• Discovered and characterized a number of low band gap hybrid semiconductors based on III-VI and V-VI binary and I-III-VI and I-V-VI ternary compounds that are potentially useful for photovoltaic and thermoelectric applications.

• Continued to modify and optimize the structure and composition of M2Q2(ba) type double-layer hybrid structures to enhance their white light emission properties.

Publications• Huang, X.-Y., Li, J. et. al. , Angew. Chem. 2009, 48, 7871.• Li, J.; Huang, X.-Y. in Oxford Handbook of Nanoscience and

Technology: Frontiers and Advances, Oxford University Press, ISBN: 978-0-19-953305-3, 2010.

• Danilovic, D.; Hamida, Y.; Yuen, T. Li, J.; J. Appl. Phys. 2010, 107, 09E153-1-3.

• Wu, M.; Li, J. et. al. Chem. Comm., 2010, 46, 1649.• Ki, W., Li, J. et. al. J. Mater. Chem. Accepted.• Yao, H.B.; Zhang, X.; Wang, X.L.; Yu, S.H.; Li, J.; Chem. Mater.

Submitted. • Banerjee, D. kim, S.J. Wu, H.H.; Li, J. Inorg. Chem. Submitted.• Li, J.; Huang. X. US Patent, E041427, 2010.

Intellectual MeritIntellectual Merit

Top: Construction of small band gap In2Te3 quantum dots (~1.2 nm) in solid state. We demonstrate here the first perfectly ordered semiconductor QD crystal lattice. Bottom-Left: Optical absorption spectra of the parent structure In2Te3 and the hybrid In2Te3(L). A blue shift of ~1.8 eV is observed. Bottom-Right: Largely enhanced quantum efficiency of white light emission of hybrid[Zn2S2-2xSe2x(ba)] systems.

In2Te3(L)

In2Te3

QY:~15%

Page 2: Developing Nanostructured Inorganic-Organic Hybrid Semiconductors for Optoelectronic Applications Jing Li, Rutgers University New Brunswick, DMR 0706069.

Supervising Activities

• Postdoctoral Associates 2• Graduate Students (Ph.D.) 9• Graduate Students (M.S.)2 • Undergraduate Students 5• High School Student 1 • Visiting Professors 1

International Collaborative Activities

• Continued on international collaborative program on PV research with South ChinaUniversity of Technology (SCUT, Guangzhou, China).

• Continued on collaborative activities with AIST(Osaka, Japan), Fujian Institute of Research onStructure of Matters (FJIRSM, Fuzhou, China),University of Leipzig (Leipzig, Germany)

• Initiated a new collaboration with NationalUniversity of Singapore (Singapore).

Educational and Outreach Activities

• Advisory Board Member: Rutgers Energy Institute• Faculty Fellow: Rutgers Business, Engineering,

Science and Technology Institute• Faculty Participant: Rutgers Institute of Advanced

Materials, Devices and Technology• Faculty Participant: Laboratory for Surface

Modification• Faculty Mentor for the RiSE Summer Program• Faculty Participant: IGERT-CleanEnergy

Developing Nanostructured Inorganic-OrganicDeveloping Nanostructured Inorganic-OrganicHybrid Semiconductors for Optoelectronic ApplicationsHybrid Semiconductors for Optoelectronic Applications

Jing Li, Rutgers University New Brunswick, DMR 0706069Jing Li, Rutgers University New Brunswick, DMR 0706069

Broader ImpactBroader Impact

Industrial Collaborative Activities

• Initialized a collaborative research project with Colgate- Palmolive Co.• Continued on collaboration with Carbozyme on energy and environmental related research.• Participated in several University-Industry related

workshops and consortia.