Developing
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Developing Positive Negative Etching and Stripping Polymer Resist Thin Film Substrate Resist Resist Exposing Radiation Figure 1.1. Schematic of positive and negative resists.
description
Exposing Radiation. Polymer Resist. Thin Film Substrate. Positive. Negative. Developing. Resist. Resist. Etching and Stripping. Figure 1.1. Schematic of positive and negative resists. D 0 –Threshold Dose. 1. Resist Film Thickness Remaining after Development. 0. D C –Clearing - PowerPoint PPT Presentation
Transcript of Developing
DevelopingPositive Negative
Etching andStripping
Polymer Resist
Thin Film
Substrate
Resist Resist
ExposingRadiation
Figure 1.1. Schematic of positive and negative resists.
Log Exposure Dose
Resist Film ThicknessRemaining after Development
0
1
D0 –ThresholdDose
DC –ClearingDose
CD
DLog 0
10
Figure 1.2.a. Characteristic curve of a hypothetical positive tone resist. b) optical projection lithography schematic.
Figure 1.2.b. Optical projection lithography schematic.
source
condenser
Cr on glassmask
reductionoptics
image inresist onwafer
Figure 1.3.a. Dual-mask PSM technique. The original pattern for the gate is modified to create a phase shift mask and a “trim” mask. The phase shift mask creates a thin line exposure and the trim mask defines the remaining features.
PSM regular mask image
Original gate pattern
Figure 1.3.b. SEM micrograph of DSP chip with 120 nm gates printed with 248nm DUV lithography and dual-mask PSM technique. The original gate size was 250 nm.
Figure 1.4. Gaussian beam, shaped beam, and cell projection DWEB schematics.
1974 1978 1990
Gaussian Shaped Beam Cell/Character
Increasing Throughput
SEM
Figure 1.5. Schematic of Electron Projection Lithography employing scattering contrast.
IMAGE IN RESIST
Figure 1.6. Schematic of a focused ion beam system.
Figure 1.7. Atomic force microscope image of topography in PMMA following FIB exposure at 1pA beam current and a total irradiation time of 20 s per feature. (From Ref. 24 by permission of American Institute of Physics.)
Figure 1.8.a. Variation of feature size with distance of sample from focus position in FIB. (From Ref. 23 by permission of American Institute of Physics.)
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0.25
0 100 200 300 400
Depth of Focus (m)
Fea
ture
Bro
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ing
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)
1.00 micronfeatures
0.25 micronfeatures
Figure 1.8.b. FIB-induced Pt deposition onto the periphery of a 5 cm radius of curvature gold-coated glass lens, corresponding to height differences of order 30 m. All images and patterns are recorded without refocusing of the ion beam. Sub 100 nm resolution is maintained over the entire field.
Figure 1.9. Schematic illustration of the microcontact printing process. (From Ref. 31 by permission of Elsevier.)
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d
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Figure 1.10. Schematic of nanoimprinting lithography process. (From Ref. 37 by permission of American Institute of Physics.)
