DESIGNING LARGE SCALE PHOTONIC (PIC Umar...4 PHOTONIC LARGE-SCALE INTEGRATION IS HERE Quantum...
Transcript of DESIGNING LARGE SCALE PHOTONIC (PIC Umar...4 PHOTONIC LARGE-SCALE INTEGRATION IS HERE Quantum...
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DESIGNING LARGE-SCALE PHOTONIC
INTEGRATED CIRCUITS (PICS)
Muhammad Umar Khan, Yufei Xing and Wim Bogaerts
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DESIGNING LARGE-SCALE PHOTONIC
INTEGRATED CIRCUITS (PICS)
Muhammad Umar Khan, Yufei Xing and Wim Bogaerts
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OUTLINE
• Large scale PICs
• Fabrication imperfections/variability
• Silicon-on-insulator (SOI) waveguide
• Design flow
• Layout aware yield prediction
• Parameter Extraction & spatial variability
• Summary
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PHOTONIC LARGE-SCALE INTEGRATION IS HERE
Quantum silicon chipJ. Wang, et al. Science 2018
32 × 32 SiPh switch matrixD. Celo et al. 2016
Photonic switchCheng, et al., Optics Express 2018
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PHOTONIC LARGE-SCALE INTEGRATION IS HERE
• Large scale PICs
• Complexity
• Functionality
• Fabrication imperfections
• Linewidth and thickness• Not as desired
• Fabrication variations accumulate• Performance degradation
• Lower fabrication yield• Expensive
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FABRICATION IMPERFECTIONS
(VARIABILITY)
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SILICON PHOTONIC WAVEGUIDE
Si substrate
silicon-oxide
n1(=3.5)>n2(=1.45)
500 nm
200 nm
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DIMENSIONAL DEPENDENCE OF A WAVEGUIDE
Effective index for different widths Effective index for different heights
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SENSITIVITY OF SILICON PHOTONICS
Silicon photonic waveguides are sensitive to
• geometry
• stress
• temperature
• …
wire width
wire height
temperature
𝜕λ
𝜕𝑤≈ 1 Τ𝑛𝑚
𝑛𝑚
𝜕λ
𝜕ℎ≈ 2 Τ𝑛𝑚
𝑛𝑚
𝜕λ
𝜕𝑇≈ 0.08 ൗ𝑛𝑚
𝐾
1nm ~10K
1nm ~20K
SiO2
Si
w
h
Silicon wire linewidth
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SOURCES OF NON-UNIFORMITY
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VARIABILITY EFFECTS WORK ON DIFFERENT SCALES
distance
intra-die
lot-to-lot
time
wafer-to-wafer
intra-wafer (die-to-die)
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DESCRIBING VARIABILITY AT DIFFERENT LEVELS
device geometry
line widthlayer thicknesssidewall angledoping profile…
process conditions
exposure doseresist ageplasma densityslurry composition…
w0
w1
h
optical device properties
effective indexgroup indexcoupling coefficientscenter wavelength…
circuit properties
optical delaypath imbalancetuning curve…
system performance
insertion losscrosstalknoise figurespower consumption…
L
Lring
Pπ
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DESIGN WORKFLOW
• Parameter Extraction & Spatial Variability• Geometrical parameters
• Waveguide width
• Waveguide thickness• Optical parameters• Mapping of optical parameters to geometrical
parameters
• Layout-Aware Yield Prediction
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PARAMETER EXTRACTION &
SPATIAL VARIABILITY
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PARAMETER EXTRACTION
• Metrology measurements
• Scanning electron microscope (SEM)• Atomic force microscope (AFM)
• Time consuming • Expensive • Destructive • Extraction error ( ~nm ) • Few places on the wafer/die
• Optical Measurements
• Fitting of measurements to simulations• Mapping of optical parameters to geometric parameters
• Smaller extraction errors (sub-nanometer) • Non-destructive • Many places over the wafer/die
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• Extract parameters (𝑛𝑒𝑓𝑓 , 𝑛𝑔) using
wafer scale measurements
• Link 𝑛𝑒𝑓𝑓 , 𝑛𝑔 to width and thickness
• Cannot separate straight and bend
waveguide
EXTRTACTION - OPTICAL MEASUREMENTS OF RINGS
Lu, Optics Express 2017
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Low order
• Inaccurate extraction
• Tolerant to overall variation
• Set reference effective index
High order
• Accurate extraction of group
index and effective index
EXTRACTION - OPTICAL MEASUREMENTS OF TWO MZIS
Spectrum
• 𝑛𝑒𝑓𝑓, 𝑛𝑔: Straight waveguide
• Length difference between two arms
Low order MZI
High order MZI
𝑚 . λ𝑟𝑒𝑠 = 𝑛𝑒𝑓𝑓 . ∆𝐿
𝑛𝑔 =λ𝑟𝑒𝑠2
𝐹𝑆𝑅 . ∆𝐿 ΔL
ΔL
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25 dies
44 copies of MZI
pairs per die
MEASUREMENT SITES
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CURVE FITTING
⇒ 𝑛𝑒𝑓𝑓, 𝑛𝑔
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𝐿
DIRECTIONAL COUPLERS
𝐾 = cos2(𝜅0 + 𝜅′𝐿)
𝜅0 𝜆 = 𝜅0 𝜆0 +𝜕𝜅0𝜕𝜆
𝜆 − 𝜆0 +1
2
𝜕2𝜅0𝜕𝜆2
𝜆 − 𝜆0
𝜅′ 𝜆 = 𝜅′ 𝜆0 +𝜕𝜅′
𝜕𝜆𝜆 − 𝜆0 +
1
2
𝜕2𝜅′
𝜕𝜆2𝜆 − 𝜆0
Treat coupler as circuit:
• 4 waveguides with their sensitivity to 𝑤, 𝑡
• 1 logical coupler with sensitivity to 𝑤, 𝑡
Coupling model = dispersive: straight + bends
Sensitivity calculated using mode solver + FDTD
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Extraction error of this
experiment
Width: 0.37 nm
Thickness: 0.26 nm
WORKFLOW TO EXTRACT GEOMETRY PARAMETERS
Xing et al., Photonics Research 2018
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SYSTEMATIC INTRA-DIE VARIATION
Xing et al., GFP 2018
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SYSTEMATIC INTRA-WAFER VARIATION
Xing et al., GFP 2018
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LAYOUT-AWARE YIELD
PREDICTION
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+sensitivity
sensitivity of modelparametersto fabrication parameters
𝜕𝑛𝑒𝑓𝑓
𝜕𝑤, …
YIELD PREDICTION SCHEME
PDK
building blocks+ models
circuit netlist + layout
wafer maps (or model)for fabricationparameters
linewidth ∆𝑤
place circuit on waferand adjust modelparameters
Monte-Carlo ondies and wafers
crosstalk
Yieldprediction
circuit simulation
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EXAMPLE: MZI LATTICE FILTER
Simple (but sensitive) building blocks
• directional couplers
• waveguide delay lines
FSR = 800GHz (~6.4nm)
Pass-band = 80GHz
Guard band = 80GHz
Crosstalk (rejection) = -15dB
Center wavelength = 1.55um
Long directional couplers• dispersive• very sensitive
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WAFER MAPS: WIDTH AND THICKNESS
Most straightforward parameters
Thickness map (measured)• 𝑟𝑎𝑛𝑔𝑒 = 213 − 219𝑛𝑚
linewidth mapSimplex noise model• 𝑟𝑎𝑑𝑖𝑢𝑠 = 200𝜇𝑚• 𝑎𝑚𝑝𝑙𝑖𝑡𝑢𝑑𝑒 = 1𝑛𝑚
Bogaerts et al., JSTQE 2019
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SAMPLING POINTS IN THE LAYOUT
All building blocks with a model will sample all variables (𝑤, 𝑡)
• waveguides: 𝑛𝑒𝑓𝑓, 𝑛_𝑔
• logical couplers: 𝜅′,𝜕𝜅′
𝜕𝜆,𝜕2𝜅′
𝜕𝜆2, 𝜅0,
𝜕𝜅0
𝜕𝜆,𝜕2𝜅0
𝜕𝜆2
• ,
• Sampling points are aggregated over the component:results in averaging, same as in fabricated devices
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10mm spacing
277 dies on a wafer
MONTE-CARLO SIMULATIONS OVER A WAFER
Using CAPHE circuit simulator (Luceda)
1000 wavelength points
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Without absolute
wavelength spec
YIELD MAPS
With absolute wavelength spec:
peak = 1.55μm ± 80 GHz
9.8%67.4%
22.8%
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Wafer thickness map
PEAK WAVELENGTH: LARGELY AFFECTED BY THICKNESS
yield on wavelength spec
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IMPROVE FILTER ?
Sweep number of taps
• More taps: better (box-like) filter
• higher rejection ratio
• sharper edges
• With variability
• phase errors add up
• coupler errors add up# taps
“performance”
more tapsmake abetter filter
effects ofvariabilitydominate
sweet spot
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YIELD ANALYSIS
Increase number of taps:
• 2: not enough taps to reach
rejection ratio
• 4-8: good quality
• 10-14: variability
kills performance
Best: 6 taps
Yield specifications:• ∆𝜆𝑝𝑒𝑎𝑘 < 40𝐺𝐻𝑧𝑛𝑚
• 𝑟𝑒𝑗𝑒𝑐𝑡𝑖𝑜𝑛 < −15𝑑𝐵• 𝑝𝑎𝑠𝑠 𝑏𝑎𝑛𝑑 𝑟𝑖𝑝𝑝𝑙𝑒 < 1𝑑𝐵• 𝑡𝑟𝑎𝑛𝑠𝑚𝑖𝑠𝑠𝑖𝑜𝑛 > 1𝑑𝐵
𝑘0 𝑘1 𝑘2 𝑘𝑁−3 𝑘𝑁−2 𝑘𝑁−1
…
good deviceswith too largewavelength offset
good deviceswith acceptablewavelength offset
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SUMMARY
• Fabrication Imperfections
• Variability
• Variability determines yield in large circuits
• Variability should be considered at design stage
• Need layout awareness for yield prediction
crosstalk
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@PhotonicsUGent
www.photonics.intec.ugent.be
E
T
Muhammad Umar Khan
Post-Doctoral Researcher
+32 465 84 75 64
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3RD SILICON PHOTONICS DESIGN COURSE
17-21 June 2019 – Ghent (Belgium)
• Gain fundamental understanding of silicon photonics design
• Circuits, components, simulation, layout, tape-outs, …
• 5 days hands-on design labs
• Get a design fabricated and measured
http://epixfab.eu/trainings/upcoming-trainings/spdc19/