Deploying COTS GaN and SMT Laminate Module Technology to traditional and latest phased array RADAR applicationsDamian McCann, Director of Engineering MACOM - Long Beach Design Centerdamian.mccann@macomtech.com

MACOM Supports Multiple Advanced Radar Systems'

Weather Systems (MPAR)

DefenseSurveillance

Defense

Marine RadarAir Traffic Control

'with Complete RF Solutions

Phase Shifter SPDTAttenuator

LNA Power

High Power Limiter

Switch Limiter

T/R Core Chips and Modules

Driver Amplifier

CMOS Drivers

LNA

Power Amp

PowerLimiter

The best technology for each RF functional component

GaN Power ModuleGaAs Power Amp

The GaN Opportunity P

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GaN is the fastest growing segment of the $1.3B RF power transistor market

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GaN is expected to be approximately 25% of the overall RF power device market in 2016

Source: ABI Research

High Power RF GaN is Expected to be Adopted Across Many Market Segments

General Purpose

Transistors

General Purpose

MMICs

ISM Applications

Radar

Satcom

SSPA

EW JammerAerospace &

Defense

(51%)

Standard

Products

(17%)

LTE Macro

LTE Small Cell

CATV Infra.

Wireless

Backhaul

Avionics(51%)

Networks

(32%)

Expected 2016 GaN TAM = $325M

A&D GaN Use

Airborne & Shipborne RADAR Systems Surveillance and Reconnaissance

GaNs higher power per element gives;

Longer Range & better performance in weatherweather

Lighter weight and smaller package

Higher Efficiency reduces Power and Cooling needs

Missile Systems High Power and Frequency needs

Lower Cost required one time use

Tough Thermal demands need higher PAE

A&D GaN Use

EW, Comms and Multifunction Systems

EW Transmit

Wideband, Tube Replacments

Tough Thermals due to size and CW operation

EW Receive

High RF survivable LNAs

Comms Transmit

Linearity and Efficiency at mm-Wave freqs

Comms Receive

mmW, wideband, Linearity and survivability

A&D - Comms and Multifunction Systems

Trends:

Highly complex secure communication of voice, data, video

Interoperability with emergency response, police, and friendly forces

Company Confidential

Increasing bandwidth Improved receiver dynamic range to operate in RF saturated arena

Functional ConvergenceiPhone features and economics Reduce size, weight, and power consumption

The push towards High Duty/CW Operation

Three major market drivers for CW GaN in A&D power modules:

New systems need to be multi-purpose with comms, EW & datalinks etc.. These systems will require higher power, linear, high duty/CW solutionslinear, high duty/CW solutions

New program funding will most likely be based upon upgrades to current systems with aggressive cost targets and small form factors using GaN to replace aging TWT, Silicon or GaAs based power modules

Size, weight, performance and cost become critical parameters for A&D system upgrades (SWaPC'.!)

Challenge for future Radar Systems

Budget cuts are placing enormous cost pressure on defense markets Greater emphasis on system upgrades of current platforms RADAR engineers are being asked to do more with less. Defense programs still require next gen radar systems to have:

1. Performance improvements1. Performance improvements2. Increased functionality3. Faster time-to-market4. Total System cost reductions

SWaPc

Why is GaN a Disruptive Technology?

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400Degs C

V/umFmax

GaN

High Operating Temperature (Tjmax)Wide Bandgap

High Potential Barrier

High Voltage OperationHigh Power DensityBreakdown FieldWide Bandgap

High Frequency/BW OperationMaximum Oscillation

FrequencyHigh Saturation Velocity

200150

Higher Efficiency

Wider Bandwidth

Higher Power

Smaller Size

Multi-function Capability

ImaxNF

GaN

GaAs

SiMax Drain CurrentHigh Carrier Density

High Electron Mobility

A/mm

dBLow Noise FigureLess Carrier Scatter

Low RF loss

High Saturation Velocity

Low Parasitic Capacitance 1.4

GaN - The Potential to Realize the Ideal Amplifier Load Line

CurrentNew Devices with muchHigher currentsHigher Impedance

Extend Present Devices tomuch Higher voltages

Smaller EnergyStorage Caps (1/2*CV

2)For Pulsed RADAR apps

Company Confidential

Voltage

Present DeviceLoad Line

much Higher voltagesMuch Higher Impedance

Generally speaking Half the Impedance Transformation Ratio,

Double the BW

Load = Vcc2 / (2 * Pout)Or

Pout = Vcc2 / (2 * Load)

MAGX-000912-1K1000 Critical Voltage is key element.

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50-65V/800mA operation, 32uS/2%, F=1.09GHz

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Pout, 65V Pout, 60V

Pout, 55V Pout, 50V

Eff, 65V Eff, 60V

Eff, 55V Eff, 50V

Realizing the Size, weight and Performance (SWaP) advantage that GaN enables

While its clear that high-voltage GaN semiconductor technology sets a new standard in power, efficiency and bandwidth performance to enable new multi-function RADAR systems.

Meaningful forward progress on reducing size and weights hinges Meaningful forward progress on reducing size and weights hinges on our ability to develop and manufacture

smaller, wider bandwidth, lighter and functionally more flexible power transistors

modules that promote multifunction integration.

Whats needed in all of these cases

a new approach to power transistor design and packaging technology

provide greater overall power performance in a smaller form factor with the greatest possible ease of assembly

AESA T/R Module Requirements

Next Gen. AESA Radar T/R Modules Requirements

1. Size, Weight and Power2. Higher Efficiency3. Reliability3. Reliability4. Surface-Mount Assembly5. Faster Time-to-Market

Existing L-Band and S-Band systems often

use Si BJT transistors and pallets

Shrinking Form Factor for High Power

800Wpk Single Stage Mode-S L-Band Pallet

Radar photo: Lockheed Martin

Next generation AESA radars need

smaller packaged power transistors to

reduce size, weight and cost, while

maintaining optimal performance and

reliability

Automatic:

die placement

die attach

wire-bond

dispense of die coat

High Power GaN in Space-Saving Plastic Packaging

dispense of die coat

over-mold

Results in True SMT

assembly with MSL 1

moisture sensitivity level 90Wpk power transistor in3 x 6 mm DFN package

GaN LED used in lighting and automotive applications

MACOM plastic packaging approach

Learning From other Applications Helps Guide Best Practices in Stress, Humidity and Temperature

Thermal Measurement of 90W Device Shows Tj=113C for 80C Stage Temp

Thermal Balanceapprox 6degs

113 deg C junction temperature represents a very low risk for thermal reliability.

Company Confidential

Pulse =1mS, Duty Cycle = 10%

Solder Temperature Approx 90degswith 80 base

thermal reliability.

Devices can operate at even higher temperatures

The calculated MTTF at 200 deg C is roughly 600 years.

MAGX-000035-09000P Eval Board Thermal Data

Thermal Transient Data 1mS/10%, Pout=95W

For transient thermal

Company Confidential

Hottest DieThermal DataAverage temps

For transient thermal characterization, a single pixel, high-speed temperature detector is used in conjunction with the steady-state microscope.

Wide bandwidth (DC-3.5GHz) GaN Transistors

High Power GaN in Small PackagesFully matched multi-stage amplifier modules

Fully Matched GaN Modules 1.2-1.4 GHz MAGX-001214-090PSM 2.7-3.5 GHz MAGX-002735-085PSM 2.7-2.9 GHz MAGX-002731-090PSM 960-1215 MHz MAGX000912-090PSM

14 mm x 24 mm laminate module

Creating a Common Amplifier Module Platform for Total System cost savings

L-Band

Avionics Band

S-Band

MABC-001000-000DPM

GaN

VPOT

VTEMPDAC

-8VDC

50VDC

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PWM

IN OUT

Module Assembly Scalable and Repeatable

20 up, 12milLaminate PanelRO4003CENEPIG Plating

(LCP)molded lid

All SMT assemblyFinal Assembly also includes a

conformal coating for enhanced environmental

ruggedness

molded lid

Tested KGD

MAMG-001214-090PSM 90W L-Band Matched 2-Stage

L-Band AESA Example - 3-Stage Balanced SMT 150W PA

Straightforward design due to modular approach.

All SMT assembly

2.1 in

25

All SMT assembly

Overall size is 2.1x1.5 in2.

Plug-and-Play

But will the SMT module not get hot sitting on a Laminate board''?

Vision: Develop device compatible materials and packaging techniques to provide localized thermal management within the packaged device

Increase thermal heat spreading and reduce heat flow barriers

GaN die

Cu Leadframe

Epoxy Attach

Thermally Enhanced Ag Epoxy

Tmax=141.3 C

Tbase=88 C

Latest SinteredAg Epoxy

Tmax=128.5 C

Tbase=89 C

Cu Leadframe

MODULEPCB

Overmold

Dense Solid CuVia HoleArray

MODULEPCB

Even More Dense Via Hole Array

Actual Rise in Temperature at base of Plastic GaN device is just 17degs < 1.1deg/W at 750uS and 15%

Total System Cost Reduction enabled by COTS GaN and High Power Laminate Based TRMs

Putting All The Technologies Together to Realize Affordable, High Power T/R Module and Planar Array Technology S-Band Laminate Base >90W Power

Building Block

S-Band Laminate Based Surface Mount TRM

Multi-stage L-Band Laminate Based Power Module

Realize S-Band Version

Mount TRM

Commercial Plastic Packaging and PCB Technologies for SWAPC

Integrating Laminate Based LGA Surface Mount TRM

Driving Down the Cost for Future Radar Systems by Shifting the Paradigm of

Design and Manufacturing

TRM - GaN enable PA section results

ThickMultilayer Board

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Frequency (GHz)

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Frequency (GHz)

Negligibe Pulse DroopA true measure of the thermal capability

In Summary''.

High performing and innovative GaN in space saving plastic enables radar system designers to take full advantage of GaN technology and achieve new levels of power density while significantly reducing system size and weight.

Using existing SMT technology capacity and best commercial practices we are also able to reduce the size, weight and affordibility of integrated Plug-and-play modular power solutions.and-play modular power solutions.

These scalable and highly manufacturable modules, when used in a True SMT assembly with additional RF SMT components, form complete TRMs in AESA RADAR systems.

Leading the way towards a truly modular RF solution for future AESA RADAR and multi-function systems.

The ability to offer a COTS solution using GaN combines the best of advanced military power technologies and high-volume commercial

manufacturing expertise, breaks through current boundaries of

SWaP, resulting in total overall system cost savings.

Thank you for your attention, any questions?