December 9. 2008U-In Chung, Samsung

ITRS ERD/ERM in KOREA

2

KSIAKSIA

Korea TWGsKorea TWGs

ERD(ERM) WGERD(ERM) WG

ERD ;U-In Chung (Samsung)

ERMemory Leader : In-Seok Yeo (Samsung)S.W.Chung(Hynix), H.S.Hwang (GIST), T.W.Kim (Sejong univ.), H.C.Sohn (Yonsei univ.), J.I.Hong (Yonsei univ.),C.S.Hwang(Seoul National univ.)

ERDevice Leader : Jong-Ho Lee (Kyungpook univ.)S.G.Kim(Dongbu high tech.), H.C.Shin(Seoul national univ.), Y.G.Choi(KAIST)

ERArchi. Leader : Su-Hwan Kim (Seoul national univ.)K.W.Kwon (SungKyunKwan univ.)

ERM ;Liaison :

U-In Chung

ERMaterial Leader; Dae-Hong Ko (Yonsei univ.)

J.M Myoung(Yonsei univ.), S.H.Hong(Seoul national univ.),

J.H.Lee(Hanyang univ.), B.J.Cho(KAIST)

IRC :Joo-Tae Moon (samsung)Jae-Sung Roh (Hynix)Yoon-Jong Lee (Dongbu)

ERD/ERM Organization & MemberERD/ERM Organization & Member

3

Relations in between organizationRelations in between organization

KSIA KSIA

TWG of KoreaTWG of Korea

ERD/ERM WGERD/ERM WG (U-in Jung) (U-in Jung) INC INC (Jin-ho Ahn) (Jin-ho Ahn)

4 Group/ 19 member

Device Maker Researcher(Samsung, Hynix, Dong-bu)

Professor(8 Univ. Seoul nat. univ. etc)

Member

Device Maker Technology Group

(Samsung, Hynix, Dong-bu)

TND (Tera Level Nano Device)Research group

NSI (Nano systems institute, Seoul

Univ.)

COSARCOSAR

R&D Promotion R&D Promotion

[ITRS] [INC]

4

ERD(ERM) WGERD(ERM) WG INC WGINC WG

Sharing WG members

1. Maintaining relationship between ITRS, INC and National Projects

by sharing working group members

National Projects LeadersNational Projects Leaders

KSIA / COSARKSIA / COSAR

Key Direction(1)Key Direction(1)

2. Active interaction with ITRS ERD members and Korea ERD/ERM

members through ITWG activities and forums

5

3. Regional interest ; Narrowing ~10nm memory candidates

a. Emerging Research memory : Narrowing memory candidates

Key Direction(2)Key Direction(2)

Nanomechanical Memory

Fuse-Antifuse Memory

Ionic Memory

Electronic Effects

Memory

Macro-molecula

r Memory

Molecular

Memories

Storage Mechanism

Electrostatically-controlled mechanical

switch

Multiple mech.

Ion transport

andredox

reaction

Multiple mechanism

s

Multiple mech.

Not known

Cell Elements

1T1R or 1D1R1T1R or 1D1R

1T1R or 1D1R

1T1R or 1D1R

1T1R or 1D1R

1T1R or 1D1R

Device Types

1) Nanobridge / cantilever2) telescoping CNT3) Nanoparticle

M-I-M (e.g., Pt/NiO/

Pt)

1) cation migration 2) anion migration

1) Charge trapping2) Mott transition3) FE barrier effects

M-I-M (nc)-I-M

Bi-stable switch

6

Key Direction(3)Key Direction(3)

3. Regional interest ;

b. Emerging Research Device :

- GaAs and Ge in ERD

- Focus on Energy effective devices (ex. BTB devices)

c. Emerging Research Architectures :

- Focus on 3D Architectures

- CMOL, Molecular switch bar : Same meaning?

Taking out ‘molecular’ in table8

d. Emerging Research Materials :

- Too much focus on Devise, Focus on Material for memory

- Many forums on memory materials for MLC and 3 D