Datasheet IPT60R022S7 - Infineon Technologies
Transcript of Datasheet IPT60R022S7 - Infineon Technologies
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IPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
1234
87
65
Tab
876
54
32
1
Tab
HSOF
Drain
Tab
Gate
Pin 1
Source
Pin 3-8
Driver
Source
Pin 2
*1
*1: Internal body diode
MOSFET600VCoolMOSªSJS7PowerDeviceIPT60R022S7enablesthebestpriceperformanceforlowfrequencyswitchingapplications.CoolMOS™S7boaststhelowestRdsonvaluesforaHVSJMOSFET,withdistinctiveincreaseofenergyefficiency.
CoolMOS™S7isoptimizedfor“staticswitching”andhighcurrentapplications.ItisanidealfitforsolidstaterelayandcircuitbreakerdesignsaswellasforlinerectificationinSMPSandinvertertopologies.
Features•CoolMOS™S7technologyenables22mΩRDS(on)inthesmallestfootprint•Optimizedpriceperformanceinlowfrequencyswitchingapplications•Highpulsecurrentcapability•KelvinSourcepinimprovesswitchingperformanceathighcurrent•TOLLpackageisMSL1compliant,totalPb-free,haseasyvisualinspectionleads
Benefits•Minimizedconductionlosses(eliminate/reduceheatsink)•Increasedsystemperformance•Morecompactandeasierdesign•LowerBOMor/andTCOoverprolongedlifetime
Comparedtoelectromechanicaldevices:•Fasterswitchingtimes•Morereliabilityandlongersystemlifetime•Shock&Vibrationresistance•Nocontactarcing,bouncingordegradationoverlifetime
Potentialapplications•Solidstaterelaysandcircuitbreakers•Linerectificationinhighpower/performanceapplicationse.g.Computing,Telecom,UPSandSolar
ProductvalidationFullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:Forparalleling4pinMOSFETdevicestheplacementofthegateresistorisgenerallyrecommendedtobeontheDriverSourceinsteadoftheGate.
Table1KeyPerformanceParametersParameter Value UnitRDS(on),max 22 mΩ
Qg,typ 150 nC
VSD 0.82 V
Pulsed ISD, IDS 375 A
Type/OrderingCode Package Marking RelatedLinksIPT60R022S7 PG-HSOF-8 60R022S7 see Appendix A
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
1MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain current rating ID - - 23 A
TC=140°CCurrent is limited by Tj max = 150°C;Lower case temp does increasecurrent capability
Pulsed drain current1) ID,pulse - - 375 A TC=25°C
Avalanche energy, single pulse EAS - - 289 mJ ID=3.8A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 3.8 A -
MOSFET dv/dt ruggedness2) dv/dt - - 20 V/ns VDS=0Vto300VGate source voltage (static) VGS -20 - 20 V static
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 390 W TC=25°CStorage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - n.a. Ncm -
Diode forward current rating IS - - 23 A
TC=140°CCurrent is limited by Tj max = 150°C;Lower case temp does increasecurrent capability
Diode pulse current1) IS,pulse - - 375 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 5 V/ns VDS=0to300V,ISD<=23A,Tj=25°C see table 8
Maximum diode commutation speed dif/dt - - 1000 A/µs VDS=0to300V,ISD<=23A,Tj=25°C see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Pulse width tp limited by Tj,max2) The dv/dt has to be limited by appropriate gate resistor3) Identical low side and high side switch
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.32 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W
Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.
Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL1
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table4StaticcharacteristicsFor applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical support by Infineon
ValuesMin. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=1.44mA
Zero gate voltage drain current IDSS --
-50
5- µA VDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.020.046
0.022- Ω VGS=12V,ID=23A,Tj=25°C
VGS=12V,ID=23A,Tj=150°C
Gate resistance RG - 0.80 - Ω f=1MHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 5639 - pF VGS=0V,VDS=300V,f=250kHzOutput capacitance Coss - 89 - pF VGS=0V,VDS=300V,f=250kHz
Effective output capacitance, energyrelated1) Co(er) - 303 - pF VGS=0V,VDS=0to300V
Effective output capacitance, timerelated2) Co(tr) - 2678 - pF ID=constant,VGS=0V,VDS=0to300V
Output charge Qoss - 803 - nC VGS=0V,VDS=0to300V
Turn-on delay time td(on) - 30 - ns VDD=300V,VGS=13V,ID=23A,RG=5.3Ω;seetable9
Rise time tr - 4 - ns VDD=300V,VGS=13V,ID=23A,RG=5.3Ω;seetable9
Turn-off delay time td(off) - 150 - ns VDD=300V,VGS=13V,ID=23A,RG=5.3Ω;seetable9
Fall time tf - 9 - ns VDD=300V,VGS=13V,ID=23A,RG=5.3Ω;seetable9
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 31 - nC VDD=300V,ID=23A,VGS=0to12VGate to drain charge Qgd - 49 - nC VDD=300V,ID=23A,VGS=0to12VGate charge total Qg - 150 - nC VDD=300V,ID=23A,VGS=0to12VGate plateau voltage Vplateau - 5.4 - V VDD=300V,ID=23A,VGS=0to12V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to300V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to300V
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.82 - V VGS=0V,IF=23A,Tj=25°C
Reverse recovery time trr - 460 - ns VR=300V,IF=23A,diF/dt=100A/µs;see table 8
Reverse recovery charge Qrr - 9 - µC VR=300V,IF=23A,diF/dt=100A/µs;see table 8
Peak reverse recovery current Irrm - 40 - A VR=300V,IF=23A,diF/dt=100A/µs;see table 8
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
50
100
150
200
250
300
350
400
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
103
1 µs10 µs100 µs1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
103
1 µs
100 µs10 µs
1 ms10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-110-2
10-1
100
0.5
0.2
0.1
0.05
0.020.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 4 8 12 16 200
100
200
300
400
500
600
20 V
12 V10 V
8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 4 8 12 16 200
50
100
150
200
250
300
350
20 V
12 V
10 V8 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 50 100 150 200 250 3000.035
0.040
0.045
0.050
0.055
0.060
20 V
12 V
10 V8 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [no
rmalized]
-50 -25 0 25 50 75 100 125 1500.6
0.9
1.2
1.5
1.8
2.1
2.4
RDS(on)=f(Tj);ID=23.0A;VGS=12V
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
100
200
300
400
500
600
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 25 50 75 100 125 1500
2
4
6
8
10
12
300 V
120 V
VGS=f(Qgate);ID=23.0Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.410-1
100
101
102
103
125 °C
25 °C
IF=f(VSD);VGS=0V;parameter:Tj
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.410-1
100
101
102
103
25 °C 125 °C
IF=f(VSD);VGS=12V;parameter:Tj
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
Diagram13:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
50
100
150
200
250
300
EAS=f(Tj);ID=3.8A;VDD=50V
Diagram14:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-50 -25 0 25 50 75 100 125 150540
560
580
600
620
640
660
680
VBR(DSS)=f(Tj);ID=1mA
Diagram15:Typ.capacitances
VDS[V]
C[p
F]
0 50 100 150 200 250 300101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram17:Typ.Qossoutputcharge
VDS[V]
Qoss [nC
]
0 50 100 150 200 250 3000
100
200
300
400
500
600
700
800
900
Qoss=f(VDS);VGS=0V
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
5TestCircuits
Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes(ss)Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload(ss)Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
6PackageOutlines
Z8B00176939
REVISION
ISSUE DATE
EUROPEAN PROJECTION
01
28-04-2015
DOCUMENT NO.
E5
E4
K1
e
MILLIMETERS
A
DIM
MIN MAX
INCHES
MIN MAX
b1
c
D
D2
E
E1
N
L
2.20 2.40 0.087 0.094
9.70
0.40
10.28
9.70
9.90
0.60
10.58
10.10
0.382
0.016
0.405
0.382
0.390
0.024
0.416
0.398
8 8
1.20 (BSC) 0.047 (BSC)
b 0.70 0.90 0.028 0.035
1) partially covered with Mold Flash
b2 0.42 0.50 0.017 0.020
H
H1
11.48 11.88 0.452 0.468
H2 7.15 0.281
H3 3.59 0.141
H4 3.26 0.128
L1 0.50 0.90 0.020 0.035
3.30 0.130
7.50 0.295
8.50 0.335
9.46 0.372
6.55 6.75 0.258 0.266
4.18 0.165
L4 1.00 1.30 0.039 0.051
L2 0.50 0.70 0.020 0.028
2
SCALE
0
4mm
0
2
L5 2.62 2.81 0.103 0.111
1.40 1.80 0.055 0.071
Figure1OutlinePG-HSOF-8,dimensionsinmm/inches
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
7AppendixA
Table11RelatedLinks
• IFXCoolMOSS7Webpage:www.infineon.com
• IFXCoolMOSS7applicationnote:www.infineon.com
• IFXCoolMOSS7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
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600VCoolMOSªSJS7PowerDeviceIPT60R022S7
Rev.2.1,2021-10-25Final Data Sheet
RevisionHistoryIPT60R022S7
Revision:2021-10-25,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2019-05-07 Release of final version
2.1 2021-10-25 Change of wording regarding breakdown voltage / cosmic ray
TrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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PublishedbyInfineonTechnologiesAG81726München,Germany©2021InfineonTechnologiesAGAllRightsReserved.
LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).
WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.