Datasheet IK#15N65H5 - Infineon Technologies

IGBTHighspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiode

IKA15N65H5650VDuoPackIGBTandDiodeHighspeedswitchingseriesfifthgeneration

Datasheet

IndustrialPowerControl

2

IKA15N65H5Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:

HighspeedH5technologyoffering•Best-in-Classefficiencyinhardswitchingandresonanttopologies•PlugandplayreplacementofpreviousgenerationIGBTs•650Vbreakdownvoltage•LowQG•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•Solarconverters•Uninterruptiblepowersupplies•Weldingconverters•Midtohighrangeswitchingfrequencyconverters

G

C

E

G C E

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKA15N65H5 650V 15A 1.65V 175°C K15EH5 PG-TO220-3 FP

3


Rev.2.1,2015-05-05

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

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Rev.2.1,2015-05-05

MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emitter voltage VCE 650 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IC 14.08.5

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A

TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 45.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IF 12.37.3

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A

Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE

±20±30 V

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

33.316.7 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Parameter Symbol Conditions Max.Value UnitCharacteristic

IGBT thermal resistance,junction - case Rth(j-c) 4.50 K/W

Diode thermal resistance,junction - case Rth(j-c) 5.60 K/W

Thermal resistancejunction - ambient Rth(j-a) 65 K/W

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Rev.2.1,2015-05-05

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=15.0ATvj=25°CTvj=125°CTvj=175°C

---

1.651.851.95

2.10--

V

Diode forward voltage VF

VGE=0V,IF=9.0ATvj=25°CTvj=125°CTvj=175°C

---

1.451.401.40

1.80--

V

Gate-emitter threshold voltage VGE(th) IC=0.15mA,VCE=VGE 3.2 4.0 4.8 V

Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C

--

--

40.04000.0

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=15.0A - 22.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 930 -

Output capacitance Coes - 24 -

Reverse transfer capacitance Cres - 4 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=520V,IC=15.0A,VGE=15V - 38.0 - nC

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 17 - ns

Rise time tr - 7 - ns

Turn-off delay time td(off) - 160 - ns

Fall time tf - 10 - ns

Turn-on energy Eon - 0.12 - mJ

Turn-off energy Eoff - 0.05 - mJ

Total switching energy Ets - 0.17 - mJ

Tvj=25°C,VCC=400V,IC=7.5A,VGE=0.0/15.0V,RG(on)=39.0Ω,RG(off)=39.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

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Rev.2.1,2015-05-05

Turn-on delay time td(on) - 16 - ns








DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 48 - ns

Diode reverse recovery charge Qrr - 0.20 - µC

Diode peak reverse recovery current Irrm - 8.0 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -200 - A/µs

Tvj=25°C,VR=400V,IF=7.5A,diF/dt=1000A/µs






SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 16 - ns








Turn-on delay time td(on) - 14 - ns








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Rev.2.1,2015-05-05

DiodeCharacteristic,atTvj=150°C











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Rev.2.1,2015-05-05

Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C;VGE=15V.RecommendeduseatVGE≥7.5V)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000.1

1

10

tp=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[kW]

25 50 75 100 125 150 1750

5

10

15

20

25

30

35

Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 150 1750.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

Figure 4. Typicaloutputcharacteristic(Tvj=25°C)


IC,C

OLLECTO

RCURRENT[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

5

10

15

20

25

30

35

40

45

VGE=20V

18V

12V

10V

8V

7V

6V

5V

4V

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Rev.2.1,2015-05-05

Figure 5. Typicaloutputcharacteristic(Tvj=150°C)


IC,C

OLLECTO

RCURRENT[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

5

10

15

20

25

30

35

40

45

VGE=20V

18V

12V

10V

8V

7V

6V

5V

4V

Figure 6. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.50

5

10

15

20

25

30

35

40

45Tj=25°CTj=150°C

Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tvj,JUNCTIONTEMPERATURE[°C]

VCEsat ,COLLECTO

R-EMITTE

RSATU

RATION[V

]

0 25 50 75 100 125 150 1750.75

1.00

1.25

1.50

1.75

2.00

2.25IC=3,8AIC=7,5AIC=15A

Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=39Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0 5 10 15 20 25 30 35 40 451

10

100

1000td(off)

tftd(on)

tr

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Rev.2.1,2015-05-05

Figure 9. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=7,5A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]


5 15 25 35 45 55 65 75 851

10

100

1000td(off)

tftd(on)

tr

Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=7,5A,rG=39Ω,DynamictestcircuitinFigure E)



25 50 75 100 125 150 1751

10

100

1000td(off)

tftd(on)

tr

Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.15mA)


VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5typ.min.max.

Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=39Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

0 5 10 15 20 25 30 35 40 450.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6Eoff

Eon

Ets

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Rev.2.1,2015-05-05

Figure 13. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=7,5A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]

E,S


J]

5 15 25 35 45 55 65 75 850.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=7,5A,rG=39Ω,DynamictestcircuitinFigure E)


E,S


J]

25 50 75 100 125 150 1750.000

0.025

0.050

0.075

0.100

0.125

0.150

0.175

0.200

0.225

0.250

0.275

0.300Eoff

Eon

Ets

Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=15/0V,IC=7,5A,rG=39Ω,DynamictestcircuitinFigure E)


E,S


J]

200 250 300 350 400 450 5000.000

0.025

0.050

0.075

0.100

0.125

0.150

0.175

0.200

0.225

0.250

0.275

0.300Eoff

Eon

Ets

Figure 16. Typicalgatecharge(IC=15A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 5 10 15 20 25 30 35 400

2

4

6

8

10

12

14

16130V520V

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Rev.2.1,2015-05-05

Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APACITANCE[pF]

0 5 10 15 20 25 301

10

100

1000

Ciss

Coss

Crss

Figure 18. IGBTtransientthermalresistance(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIENTTH

ERMALRESISTA

NCE[K

/kW]

1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1000.01

0.1

1D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.25715781.8E-4

20.57318331.2E-3

30.44609299.1E-3

40.52091720.1021129

51.8047661.367234

60.89788267.180227

Figure 19. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIENTTH

ERMALRESISTA

NCE[K

/kW]

1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1000.001

0.01

0.1

1 D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.95209412.1E-4

21.1719481.1E-3

30.52879448.9E-3

40.46475770.09325149

51.6719811.367755

60.81042467.182978

Figure 20. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVERSERECOVERYTIME[ns]

600 800 1000 1200 1400 1600 1800 200030

40

50

60

70

80

90Tj=25°C, IF = 7.5ATj=150°C, IF = 7.5A

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Rev.2.1,2015-05-05

Figure 21. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)


Qrr,R

EVERSERECOVERYCHARGE[µC]

600 800 1000 1200 1400 1600 1800 20000.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50Tj=25°C, IF = 7.5ATj=150°C, IF = 7.5A

Figure 22. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


Irr,R

EVERSERECOVERYCURRENT[A]

600 800 1000 1200 1400 1600 1800 20005.0

7.5

10.0

12.5

15.0

17.5Tj=25°C, IF = 7.5ATj=150°C, IF = 7.5A

Figure 23. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


dIrr/dt,diodepeakrateoffallofI

rr[A

/µs]

600 800 1000 1200 1400 1600 1800 2000-400

-350

-300

-250

-200

-150

-100

-50

0Tj=25°C, IF = 7.5ATj=150°C, IF = 7.5A

Figure 24. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWARDCURRENT[A]

0.0 0.5 1.0 1.5 2.0 2.50

3

6

9

12

15

18

21

24

27Tj=25°CTj=150°C

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Rev.2.1,2015-05-05

Figure 25. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWARDVOLTAGE[V

]

25 50 75 100 125 150 1750.8

1.0

1.2

1.4

1.6

1.8

2.0IF=4,5AIF=9AIF=18A

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Rev.2.1,2015-05-05

Package Drawing PG-TO220-3-FP

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Rev.2.1,2015-05-05

t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

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Rev.2.1,2015-05-05

RevisionHistory

IKA15N65H5

Revision:2015-05-05,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2012-11-09 Preliminary datasheet

1.2 2013-12-17 New Marking Pattern

2.1 2015-05-05 Final data sheet

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PublishedbyInfineonTechnologiesAG81726Munich,Germany81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Datasheet IK#15N65H5 - Infineon Technologies

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