2SC5886A

2005-02-28 1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5886A High-Speed Switching Applications DC/DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Maximum Ratings (Ta = 25C)

Characteristic Symbol Rating Unit

Collector-base voltage VCBO 120 V

VCEX 100 Collector-emitter voltage

VCEO 50 V

Emitter-base voltage VEBO 9 V

DC IC 5 Collector current

Pulse ICP 10 A

Base current IB 0.5 A

Ta = 25C 1 Collector power dissipation Tc = 25C

Pc 20

W

Junction temperature Tj 150 C

Storage temperature range Tstg 55 to 150 C Electrical Characteristics (Ta = 25C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Collector cutoff current ICBO VCB = 120 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 9 V, IC = 0 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 V

hFE (1) VCE = 2 V, IC = 0.5 A 400 1000 DC current gain

hFE (2) VCE = 2 V, IC = 1.6 A 200

Collector-emitter saturation voltage VCE (sat) IC = 1.6 A, IB = 32 mA 0.22 V Base-emitter saturation voltage VBE (sat) IC = 1.6 A, IB = 32 mA 1.10 V

Rise time tr 60 Storage time tstg 500 Switching time Fall time tf

See Figure 1. VCC 24 V, RL = 15 IB1 = 32 mA, IB2 = 53 mA 95

ns

Unit: mm

JEDEC

JEITA

TOSHIBA 2-7J1A

Weight: 0.36 g (typ.)

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2005-02-28 2

Figure 1 Switching Time Test Circuit & Timing Chart

Marking

IB2

IB1

20 s

OutputInput

IB2

IB1

RL

VCC

Duty cycle < 1%

Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Part No. (or abbreviation code)C5886A

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C

olle

ctor

cur

rent

I C

(A

)

Collectoremitter voltage VCE (V)

IC VCE

C

olle

ctor

cur

rent

I C

(A

)

Collector current IC (A)

VCE (sat) IC

Col

lect

ore

mitt

er s

atur

atio

n vo

ltage

V C

E (s

at)

(V)

Collector current IC (A)

VBE (sat) IC

Base

em

itter

sat

urat

ion

volta

ge

V BE

(sat

) (

V)

Baseemitter voltage VBE (V)

IC VBE

Base current IB (A)

VCE IB

C

olle

ctor

em

itter

vol

tage

V C

E

(V)

00

4

2 4 6 8 10

2

6

0.001

10

0.11 10

1

0.01

10

0.001 10

0.1

1

0.1 1 0.01

10

0.010.001

Tc = 100C

55

25

0.01 1 10

1

0.1

4

1

0.8 1.6

3

0.01

40 50

IB = 1 mA

70

20

Common emitterTc = 25C Pulse test

100.001

1000

100

10000

0.01 0.1 1 10

hFE IC

D

C c

urre

nt g

ain

hFE

Collector current IC (A)

10

30

5

2

Common emitter VCE = 2 V Pulse test

0.1

Common emitter IC/IB = 50 Pulse test

Tc = 100C 55

25

Common emitterIC/IB = 50 Pulse test

Tc = 100C

55 25

0.1

Common emitter VCE = 2 V Pulse test

5

2

01.2 0.4 0

Common emitter Tc = 25C Pulse test

Tc = 100C 55

25

IC = 1 A

1.62

3

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Collectoremitter voltage VCE (V)

Safe operating area

C

olle

ctor

cur

rent

I C

(A

)

0.01

100

10 ms*

VCEO max

100 s*

100 ms*

IC max (pulse)*

0.1 10 100 1

1

10

0.1

10 s*

rth(jc) tw

Pulse width tw (s)

10

10.001 10 0.01 0.1 1

DC operation Tc = 25C

IC max (continuous)* 1 ms*

Tran

sien

t the

rmal

resi

stan

ce

(ju

nctio

nca

se)

r th (j

c)

(C

/W)

Tc = 25C Infinite heat sink Curves apply only to limited areas of thermal resistance (single nonrepetitive pulse).

*: Single pulse Tc = 25CCurves must be derated linearly with increase in temperature

2SC5886A

2005-02-28 5

The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk.

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

030619EAARESTRICTIONS ON PRODUCT USE