P1203BVN-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)

THERMAL RESISTANCE RATINGS

UNITS

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed

A

mJ

30

40

28

SYMBOL

ID

IDM

1

2.5W

THERMAL RESISTANCE

RqJC

TYPICAL

UNITS

40

7

11

20

Continuous Drain Current2

VGS

VDS

LIMITS

V

TA = 25 C

Operating Junction & Storage Temperature Range

TA = 100 CPower Dissipation

Junction-to-Ambient

MAXIMUM

RDS(ON)

TA = 100 C

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

Gate-Source Voltage

ID

12m @VGS = 10V 11A

Avalanche Energy L = 0.1mH

Pulsed Drain Current1 , 2

TA = 25 C

Avalanche Current

30V

C-55 to 150

50

IAS

EAS

SYMBOL

PD

TJ, TSTG

Junction-to-Case 25

RqJAC / W

Ver 1.0 1 2012/4/13

http://www.DataSheet4U.net/

datasheet pdf - http://www.DataSheet4U.net/

P1203BVN-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)

MIN TYP MAX

30

1 1.8 3

100 nA

1

10

70 A

14 17.5

8.5 12

40 S

846

225

126

1.65

17

2.7

4

9

40

20

6

1.9 A

1.3 V

21 nS

10 nC1Pulse test : Pulse Width 300 msec, Duty Cycle 2.

2Independent of operating temperature.

VGS = 0V, VDS = 0V, f = 1MHz

Zero Gate Voltage Drain Current

Forward Transconductance1 gfs VDS = 5V, ID = 10A

DYNAMIC

Input Capacitance Ciss

mAIDSSVDS = 20V, VGS = 0V , TJ = 125 C

VGS = 0V, VDS = 20V, f = 1MHz pF

m

Output Capacitance Coss

VDS = VGS, ID = 250mA

VDS = 0V, VGS = 20V

STATIC

Gate-Body Leakage

Gate Threshold Voltage

IGSS

VGS = 0V, ID = 250mAV(BR)DSS

VDS = 24V, VGS = 0V

TEST CONDITIONS

V

LIMITSUNIT

Drain-Source Breakdown Voltage

VGS(th)

Reverse Transfer Capacitance Crss

Total Gate Charge2 Qg

PARAMETER SYMBOL

Gate Resistance Rg

On-State Drain Current1 ID(ON)

VDS = 0.5V(BR)DSS,

ID = 8.8A, VGS = 10VnCGate-Source Charge

2 Qgs

Gate-Drain Charge2 Qgd

VDD = 15V, ID = 12.5A, VGS = 10V,

RG=6nS

Rise Time2 tr

Turn-Off Delay Time2 td(off)

Fall Time2 tf

Reverse Recovery Time trrIF = 11 A, dlF/dt = 100A / mS

Reverse Recovery Charge Qrr

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)

Continuous Current IS

VDS = 10V, VGS = 10V

Drain-Source On-State

Resistance1

VGS = 10V, ID = 11ARDS(ON)

VGS = 4.5V, ID = 11A

Forward Voltage1 VSD IF = 25A, VGS = 0V

Turn-On Delay Time2 td(on)

Ver 1.0 2 2012/4/13

http://www.DataSheet4U.net/

datasheet pdf - http://www.DataSheet4U.net/

P1203BVN-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/13

http://www.DataSheet4U.net/

datasheet pdf - http://www.DataSheet4U.net/

P1203BVN-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/13

http://www.DataSheet4U.net/

datasheet pdf - http://www.DataSheet4U.net/

P1203BVN-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/13

http://www.DataSheet4U.net/

datasheet pdf - http://www.DataSheet4U.net/