Data Sheet d880to-220
1
D880 NPN Epitaxial Silicon Transistor Elite Enterprises (H.K.) Co., Ltd. Part No.: D880 Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected] Page: 1 / 1 LOW FREQUENCY POWER AMPLIFIER z Complement to B834 z Collector-Emitter Voltage: VCEO=150V z Collector Dissipation: PC(max)=30W Absolute Maximum Ratings (TA=25 o C) Characteristic Symbol Rating Unit Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 7 V Collector Current I C 3 A Collector Dissipation P C 30 W Junction Temperature T J 150 o C Storage Temperature T STG -55~+150 o C Electrical Characteristics (TA=25 o C) Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage BV CEO I C =50mA, I B =0 60 V Emitter Cut-off Current I EBO V EB =7V, I C =0 100 μA Collector Cut-off Current I CBO V CB =60V, I E =0 100 μA DC Current Gain h FE(1) V CE =5V, I C =0.5A 60 300 h FE(2) V CE =5V, I C =3A 20 Collector-Emitter Saturation Voltage V CE(SAT) I C =3A, I B =0.3A 0.4 1 V Base-Emitter On Voltage V BE(ON) V CE =5V, I C =0.5A 0.7 1 V Current Gain Bandwidth Product f T V CE =5V, I C =0.5A 3 MHz Output Capacitance C OB V CB =10V, I E =0, f=1MHz 70 pF Turn On Time t ON V CC =30V, I C =1A 0.8 μs Storage Time t STG I B1 =-I B2 =0.2A 1.5 μs Fall Time t F R L =30Ω 0.8 μs h FE CLASSIFICATION Classification O Y G h FE1 60 – 120 100 - 200 150 -300 1. Base 2. Collector 3. Emitter TO-220
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Transcript of Data Sheet d880to-220
D880 NPN Epitaxial Silicon Transistor
Elite Enterprises (H.K.) Co., Ltd. Part No.: D880 Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected] Page: 1 / 1
LOW FREQUENCY POWER AMPLIFIER Complement to B834 Collector-Emitter Voltage: VCEO=150V Collector Dissipation: PC(max)=30W
Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector Current IC 3 A Collector Dissipation PC 30 W Junction Temperature TJ 150 oC Storage Temperature TSTG -55~+150 oC Electrical Characteristics (TA=25oC)
Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC=50mA, IB=0 60 V Emitter Cut-off Current IEBO VEB=7V, IC=0 100 μA Collector Cut-off Current ICBO VCB=60V, IE=0 100 μA DC Current Gain hFE(1) VCE=5V, IC=0.5A 60 300 hFE(2) VCE=5V, IC=3A 20 Collector-Emitter Saturation Voltage VCE(SAT) IC=3A, IB=0.3A 0.4 1 V Base-Emitter On Voltage VBE(ON) VCE=5V, IC=0.5A 0.7 1 V Current Gain Bandwidth Product fT VCE=5V, IC=0.5A 3 MHz Output Capacitance COB VCB=10V, IE=0, f=1MHz 70 pF Turn On Time tON VCC=30V, IC=1A 0.8 μs Storage Time tSTG IB1=-IB2=0.2A 1.5 μs Fall Time tF RL=30Ω 0.8 μs hFE CLASSIFICATION
Classification O Y G hFE1 60 – 120 100 - 200 150 -300
1. Base 2. Collector 3. Emitter
TO-220
