DATA SHEET - cvut.cznoel.feld.cvut.cz/hw/philips/acrobat/5103.pdf · DATA SHEET Objective...
Transcript of DATA SHEET - cvut.cznoel.feld.cvut.cz/hw/philips/acrobat/5103.pdf · DATA SHEET Objective...
DATA SHEET
Objective specificationSupersedes data of 1996 Feb 26File under Integrated Circuits, IC03
1997 Oct 09
INTEGRATED CIRCUITS
TEA1102; TEA1102TFast charge ICs for NiCd, NiMH,SLA and Lilon
1997 Oct 09 2
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
FEATURES
• Safe and fast charging of Nickel Cadmium (NiCd),Nickel Metal Hydride (NiMH), Lithium Ion (LiIon), andSealed Lead Acid (SLA) batteries
• Three charge states for NiCd or NiMH; fast, top-off andtrickle or voltage regulation (optional)
• Two charge states for LiIon or SLA; current and voltagelimited
• Adjustable fast charge current [0.5CA to 5CA nominal(CA = Capacity Amperes)]
• DC top-off and pulsating trickle charge current (NiCdand NiMH)
• Temperature dependent ∆T/∆t battery full detection
• Automatic switch-over to accurate peak voltagedetection (−1⁄4%) if no NTC is applied
• Possibility to use both ∆T/∆t and peak voltage detectionas main fast charge termination
• Support of inhibit during all charging states
• Manual refresh with regulated adjustable dischargecurrent (NiCd and NiMH)
• Voltage regulation in the event of no battery
• Support of battery voltage based charge indication andbuzzer signalling at battery insertion, end of refresh andat full detection
• Single, dual and separate LED outputs for indication ofcharge status state
• Minimum and maximum temperature protection
• Time-out protection
• Short-circuit battery voltage protection
• Can be applied with few low-cost external components.
GENERAL DESCRIPTION
The TEA1102; TEA1102T are fast charge ICs which areable fast charge NiCd and NiMH, SLA and Lilon batteries.
The main fast charge termination for NiCd and NiMHbatteries are ∆T/∆t and peak voltage detection, both ofwhich are well proven techniques. The TEA1102;TEA1102T automatically switches over from ∆T/∆t to peakvoltage detection if the thermistor fails or is not present.The ∆T/∆t detection sensitivity is temperature dependent,thus avoiding false charge termination. Three chargestates can be distinguished; fast, top-off and trickle.
Charging Lilon and SLA batteries is completely different.When the batteries reach their maximum voltage(adjustable), the TEA1102; TEA1102T switches over fromcurrent regulation to voltage regulation. After a definedtime period, which is dependent on battery capacity andcharge current, charge is terminated. Due to small selfdischarge rates of Lilon and SLA batteries, trickle chargecan be omitted.
Several LEDs, as well as a buzzer, can be connected tothe TEA1102; TEA1102T for indicating battery insertion,charge states, battery full condition and protection mode.
The TEA1102; TEA1102T are contained in a 20-pinpackage and are manufactured in a BiCMOS process,essentially for integrating the complex mix of requirementsin a single chip solution. Only a few external low costcomponents are required in order to build a state of the artcharger.
ORDERING INFORMATION
TYPENUMBER
PACKAGE
NAME DESCRIPTION VERSION
TEA1102 DIP20 plastic dual in-line package; 20 leads (300 mil) SOT 146-1
TEA1102T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
1997 Oct 09 3
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VP supply voltage 5.5 − 11.5 V
IP supply current outputs off − 4 − mA
∆VNTC/VNTC temperature rate dependent(∆T/∆t) detection level
VNTC = 2 V;Tj = 0 to 50 °C
− −0.25 − %
∆Vbat/Vbat voltage peak detection level withrespect to top value
Vbat = 2 V;Tj = 0 to 50 °C
− −0.25 − %
IVbat input current battery monitor Vbat = 0.3 to 1.9 V − 1 − nA
Vbat(l) voltage at pin 19 for detecting lowbattery voltage
− 0.30 − V
IIB battery charge current fast charge 10 − 100 µA
top-off mode − 3 − µA
IIB(max) maximum battery charge current voltage regulation fullNiCd and NiMH battery
− 10 − µA
IIB(Lmax) maximum load current no battery − 40 − µA
fosc oscillator frequency 10 − 200 kHz
Vreg regulating voltage LiIon − 1.37 − V
SLA − 1.63 − V
NiCd and NiMH(pin Vstb open-circuit)
− 1.325 orVstb
− V
open battery − 1.9 − V
1997 Oct 09 4
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
BLOCK DIAGRAM
handbook, full pagewidth
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1997 Oct 09 5
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
PINNING
SYMBOL PIN DESCRIPTION
Vstb 1 standby regulation voltage input(NiCd and NiMH)
IB 2 charge current setting
GND 3 ground
PSD 4 program pin sample divider
LED 5 LED output
POD 6 program pin oscillator divider
PTD 7 program pin time-out divider
NTC 8 temperature sensing input
MTV 9 maximum temperature voltage
RFSH 10 refresh input/output
FCT 11 fast charge termination andbattery chemistry identification
VP 12 positive supply voltage
Vsl 13 switched reference voltage output
OSC 14 oscillator input
PWM 15 pulse width modulator output
VS 16 stabilized reference voltage
LS 17 loop stability pin
AO 18 analog output
Vbat 19 single-cell battery voltage input
Rref 20 reference resistor pinFig.2 Pin configuration.
handbook, halfpage
TEA1102
MBH067
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
Vstb Rref
Vbat
Vsl
VP
VS
AO
LS
PWM
OSC
FCT
IB
GND
PSD
LED
POD
PTD
NTC
MTV
RFSH
1997 Oct 09 6
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
INTRODUCTION
All battery types are initially fast charged with anadjustable high current. Fast charge termination dependsupon the battery type. With NiCd and NiMH batteries themain fast charge termination will be the ∆T/∆t (temperaturedetection) and/or peak voltage detection and with SLA andLiIon batteries when the battery voltage reaches2.45 or 4.1 V respectively.
The fast charge period is followed by a top-off period forNiCd and NiMH batteries and by a fill-up period for SLAand LiIon batteries. During the top-off period the NiCd andNiMH batteries are charged to maximum capacity byreduced adjustable charge current.
During the fill-up period the SLA and LiIon batteries arecharged to maximum capacity by a constant voltage and agradually decreasing current. The fill-up and top-off periodends after time-out or one hour respectively.
After the fill-up or top-off period, the TEA1102 switchesover to the standby mode. For NiCd and NiMH batterieseither the voltage regulation or trickle charge mode can beselected. The voltage regulation mode is selected whenthe battery includes a fixed load. Trickle charge prevents adischarge of the battery over a long period of time.For SLA and LiIon batteries the charge current is disabledduring standby. The fast charge mode is entered againwhen the battery voltage reaches 1.5 V (SLA) or 3 V(LiIon).
Charging principles
CHARGING NiCd/NiMH BATTERIES
Fast charging of the battery begins when the power supplyvoltage is applied and at battery insertion.
During fast charge of NiCd and NiMH batteries, the batterytemperature and voltage are monitored. Outside theinitialized temperature and voltage window, the systemswitches over to the top-off charge current.
The TEA1102 supports detection of fully charged NiCdand NiMH batteries by either of the following criteria:
• ∆T/∆t
• Voltage peak detection.
If the system is programmed with ∆T/∆t and Vpeak or, ∆T/∆tor Vpeak as the main fast charge termination, itautomatically switches to voltage peak detection if thebattery pack is not provided with a temperature sensinginput (NTC). In this way both packages, with and withouttemperature sensor, can be used randomly independent ofthe applied full detection method. Besides ∆T/∆t and/or
voltage peak detection, fast charging is also protected bytemperature cut-off and time-out.
To avoid false fast charge termination by peak voltagedetection or ∆T/∆t, full detection is disabled during a shorthold-off period at the start of a fast charge session. Afterfast charge termination, the battery is extra charged by atop-off period. During this period of approximately onehour, the charge current is lowered thus allowing thebattery to be charged to nearly 100% before the systemswitches over to standby.
After the battery has been charged to nearly 100% by thetop-off period, discharge of the battery (caused by a loador by the self-discharge) can be avoided by voltageregulation or by trickle charge.
If batteries are charged in combination with a load, theTEA1102 can be programmed to apply voltage regulationduring the standby mode. In this way, discharge of thebattery caused by self-discharge or by an eventual load isavoided. The regulating voltage is adjustable to thevoltage characteristic of the battery. For battery safety thecharge current is limited and the temperature is monitoredduring voltage regulation. If a trickle charge is applied, theself-discharge of the battery will be compensated by apulsating charge current.
To avoid the so called ‘memory effect’ in NiCd batteries, arefresh can be manually activated.The discharge current isregulated by the IC in combination with an external powertransistor. After discharging the battery to 1 V per cell, thesystem automatically switches over to fast charge.
CHARGING LiION/SLA BATTERIES
Charging these types of batteries differs considerably fromcharging NiCd and NiMH batteries. The batteries will becharged with a charge current of 0.15 CA if their cellvoltage is below the minimum voltage of 0.9 V for Lilon or0.45 V for SLA. With batteries in good condition the batteryvoltage will rise above 0.9 V in a short period of time.When the batteries are short-circuited the voltage will notrise above 0.9 V within one hour and the system willchange over to cut-off, which means that the output driversAO and PWM are fixed to zero and that battery charge canonly be started again after a power-on reset. If the batteryvoltage of a good condition battery is above the minimumlevel of 0.9 V the battery will be charged with theprogrammed fast charge current.
If Lilon or SLA batteries are used, ‘full’ is detected whenthe battery voltage reaches 4.1 and 2.45 V respectively.At this point the TEA1102 switches from current regulationto voltage regulation (fill-up mode).
1997 Oct 09 7
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
After the ‘fill-up’ period the charge current is not regulated,which means that the output drivers AO and PWM arefixed to zero. When the battery voltage becomes less than3 V for Lilon and 1.5 V for SLA, the IC enters the fastcharge mode again.
FUNCTIONAL DESCRIPTION
Control logic
The main function of the control logic is to support thecommunication between several blocks. It also controlsthe charge method, initialization and battery full detection.The block diagram of the TEA1102 is illustrated in Fig.1.
Conditioning charge method and initializations
At system switch-on, or at battery insertion, the controllogic sets the initialization mode in the timer block. Afterthe initialization time the timer program pins can be usedto indicate the charging state using several LEDs.The charge method is defined at the same time by thefollowing methods:
• If the FCT pin is 0 or 1.25 V, indicating that SLA or LiIonbatteries have to be charged, the battery will be chargedby limit current and limit voltage regulation. Withoutidentification (FCT pin floating), the system will chargethe battery according to the charge characteristic ofNiCd and NiMH batteries.
• The standby charge method (NiCd and NiMH), tricklecharge or voltage regulation, is defined by the input pinVstb. By biasing this voltage with a set voltage, the outputvoltage will be regulated to the Vstb set voltage. If this pinis connected to VS, or no NTC is connected the systemapplies trickle charge.
If pin RFSH is connected to ground by depressing theswitch, the TEA1102 discharges the battery via anexternal transistor connected to pin RFSH. The dischargecurrent is regulated with respect to the external (charge)sense resistor (Rsense). End-of-discharge is reached whenthe battery is discharged to 1 V per cell. Refreshing thebattery can only be activated during charging of NiCd andNiMH batteries. When charging LiIon and SLA batteries,discharge before charge is disabled.
The inhibit mode has the main priority. This mode isactivated when the Vstb input pin is connected to ground.Inhibit can be activated at any charge/discharge state,whereby the output control signals will be zero, all LEDswill be disabled and the charger timings will be set on hold.Table 1 gives an operational summary.
Table 1 Functionality of program pins
Notes
1. Where X = don’t care.
2. Not low means floating or high.
3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC.
4. The NTC voltage is outside the window for NTC detection.
5. Vstb has to be floating or set to a battery regulating voltage in accordance with the specification.
FUNCTION FCT NTC RFSH Vstb
Inhibit X(1) X(1) X(1) low
LiIon and SLA detection low X(1) X(1) X(1)
Refresh (NiCd and NiMH) not low(2) X(1) low not low
∆T/∆t detection floating note 3 not low not low
∆T/∆t and voltage peak detection high note 3 not low not low
Voltage peak detection not low note 4 not low not low
Trickle charge at standby not low X(1) not low high
not low note 4 not low not low
Voltage regulation at standby not low note 3 not low floating(5)
1997 Oct 09 8
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
Supply block
The supply block delivers the following outputs:
• A power-on reset pulse to reset all digital circuitry atbattery insertion or supply switch-on. After a generalreset the system will start fast charging the battery.
• A 4.25 V stabilized voltage source (VS) is externallyavailable. This source can be used to set the thermistorbiasing, to initialize the programs, to supply the externalcircuitry for battery voltage based charge indication andto supply other external circuitry.
• A 4.25 V bias voltage (Vsl) is available for use for moreindication LEDs. This output pin will be zero during theinitialization period at start-up, thus avoiding anyinterference of the extra LEDs when initializing.
Charge control
The charge current is sensed via a low-ohmic resistor(Rsense), see Fig.4. A positive voltage is created acrossresistor Rb by means of a current source Iref which is set byRref in the event of fast charge and by an internal biascurrent source in the event of top-off and trickle charge(IIB), see Fig.1. The positive node of Rb will be regulated tozero via error amplifier A1, which means that the voltageacross Rb and Rsense will be the same. The fast chargecurrent is defined by the following equation:
(1)
The output of amplifier A1 is available at the loop stabilitypin LS, consequently the time constant of the current loopcan be set. When Vpeak (NiCD and NiMH) is applied, thecurrent sensing for the battery voltage will be reduced,implying that the charge current will be regulated to zeroduring:
(2)
Actually battery voltage sensing takes place in the lastoscillator cycle of this period.
To avoid modulation on the output voltage, the top-offcharge current is DC regulated, defined by the followingequation:
(3)
where:
(4)
The top-off charge current will be approximately 0.15 CA,which maximizes the charge in the battery under safe andslow charging conditions. The top-off charge period will beapproximately one hour, so the battery will be extra
Ifast Rsense× Rb Iref×=
tsense 210
POD× tosc×=
Itop off– Rsense× Rb 3 106–××=
ttop off– 227
TOD× tosc×=
charged with approximately 0.15 Q. In this way the batteryis fully charged before the system switches over tostandby.
When pin 1 (Vstb) is connected to VS, or no NTC isconnected the system compensates the (self) discharge ofthe battery by trickle charge. The trickle charge current willbe pulsating, defined by the following equation:
(5)
During the non current periods at trickle charge the chargecurrent is regulated to zero, so that the current for a loadconnected in series across the battery with the senseresistor will be supplied by the power supply and not by thebattery.
If at pin 1 (Vstb) a reference voltage is set in accordancewith the specification, and no NTC is connected the chargemode will switch over from current to voltage regulationafter top-off. The reference regulating voltage can beadjusted to the battery characteristic by external resistorsconnected to pin Vstb.
This reference voltage has to be selected in such a waythat it equals the rest voltage of the battery. By usingvoltage regulation, the battery will not be discharged at aload occurrence. If the Vstb input pin is floating, theTEA1102 will apply voltage regulation at 1.325 V duringthe standby mode (NiCd and NiMH). The current duringvoltage regulation is limited to 0.5 CA. If the battery chargecurrent is maximized to 0.5 CA for more than 2 hourscharging will be stopped. Moreover, if the temperatureexceeds Tmax, charging will be stopped completely.As voltage regulation is referred to one cell, the voltage onthe Vbat pin must be the battery voltage divided by thenumber of cells (NiCd and NiMH).
For LiIon or SLA batteries, the battery is extra chargedafter full detection by constant voltage regulation during acertain fill-up period. LiIon and SLA batteries have toidentify themselves by an extra pin on the battery pack toground, which is connected via a resistor to pin 11 (FCT).As the battery voltage sense (Vbat) has to be normalized toa one cell voltage of NiCd and NiMH packages, the Vbatinput pin will be regulated to 1.367 and 1.633 V duringfill-up for LiIon and SLA respectively. In this way thissystem can accept a mixture of one LiIon, two SLA andthree NiCd or NiMH packages.
After fill-up, charging of LiIon or SLA batteries is disabled.The battery charge is then fixed to zero, ensuringmaximum life-cycle of the battery.
Because of a fixed zero charge current, the battery will bedischarged if a load is applied.
Itrickle Rsense× Rb1516------× 10
6–×=
1997 Oct 09 9
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
To ensure an eventual load during all charging states, thefast charge mode will be entered again if the batteryvoltage drops below 15 V for SLA or 3 V for Lilon.
When charging, the standby mode (LiIon and SLA) canonly be entered after a certain period of time depending ontime-out. The same applies for charging NiCd or NiMHbatteries. To support full test of the TEA1102 atapplication, the standby mode is also entered whenVbat < Vbat(l) at fill-up or top-off respectively.
Timer
The timing of the circuit is controlled by the oscillatorfrequency.
The timer block defines the maximum charging time by‘time-out’. At a fixed oscillator frequency, the time-out timecan be adapted by the Programmable Time-out Divider(PTD) using the following equation.
(6)ttime out– 226
POD× PTD× tosc×=
The time-out timer is put on hold by low voltage,temperature protection and during the inhibit mode.The Programmable Oscillator Divider (POD) enables theoscillator frequency to be increased without affectingthe sampling time and time-out. Raising the oscillatorfrequency will reduce the size of the inductive componentsthat are used.
At fast charging, after battery insertion, after refresh orsupply interruption, the full detector will be disabled for aperiod of time to allow a proper start with flat or inversepolarized batteries. This hold-off period is disabled at fastcharging by raising pin Vstb to above ±5 V (once).So for test options it is possible to slip the hold-off period.The hold-off time is defined by the following equation:
(7)
Table 2 gives an overview of the settings of timing anddischarge/charge currents.
thold off– 25–
ttime out–×=
Table 2 Timing and current formulae
SYMBOL DESCRIPTION FORMULAE
tosc timing see Fig.3
Tsampling (∆T/∆t) NTC voltage sampling frequency 217 × POD × PSD × tosc
Tsampling (Vpeak) battery voltage sampling frequency 216 × POD × tosc
ttop-off 227 × POD × tosc
ttime-out 226 × POD × PTD × tosc
thold-off 2−5 × ttime-out
tLED inhibit or protection 214 × POD × tosc
tsense 210 × POD × tosc
tswitch 221 × POD × PTD × tosc
Ifast charge/discharge currents
Itop-off
Itrickle
Iload-max
IRFSH
Rb
Rsense-----------------
Vref
Rref----------×
Rb
Rsense----------------- 3× 10
6–×
Rb
Rsense-----------------
1516------× 10
6–×
Rb
Rsense----------------- 40× 10
6–×
100 mVRsense--------------------
1997 Oct 09 10
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
handbook, full pagewidth
200
fosc(kHz)
00 30 60 90 120 150
ttime-out (min)180 10
12.5(R23 min)
PTD programming
125(R23 max)
30 50 70 90R23 (kΩ)
C4(pF)
110
68
100
150
220
3905608201500
130
MGD280
40
80
120
160
:1(GND)
:2(n.c.)
:4(+VS)
preferedoscillator
range(POD = GND)
preferedoscillator
range(POD = n.c.)
preferedoscillator
range(POD = +VS)
Fig.3 ttime-out as a function of R23 and PTD with C4 as parameter.
LED indication
With few external components, indication LEDs can beconnected to the program pins and the LED pin of theTEA1102. These program pins change their function froman input to an output pin after a short initialization time atsystem switch-on or battery insertion. Output pin Vslenables the external LEDs to be driven and avoidsinteraction with the programming of the dividers during theinitialization period.
The applied LEDs indicate:
• Protection
• Refresh
• Fast charge
• 100%
• No-battery.
The LED output pin can also indicate the charging state byone single LED. The indication LED can be connecteddirectly to the LED output. This single LED indicates:
• Fast charge (LED on)
• 100% or refresh (LED off)
• Protection or inhibit (LED floating).
The refresh can be indicated by an extra LED connectedto pin 4 (PSD). A buzzer can also be driven from theTEA1102 to indicate battery insertion end of refresh or fullbattery.
AD/DA converter
When battery full is determined by peak voltage detection,the Vbat voltage is sampled at a rate given by the followingequation:
(8)
The analog value of a Vbat sample is then digitized andstored in a register. On the following sample, the digitizedvalue is converted back to the analog value of Vbat andcompared with the ‘new’ Vbat sample.
tsampling Vpeak( ) 216
POD× tosc×=
1997 Oct 09 11
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
At an increase of the battery voltage the 14-bitanalog-to-digital convertor (ADC) is refreshed with thisnew value. Therefore, the digitized value alwaysrepresents the maximum battery voltage. A decreasedVbat voltage is not stored, but is compared to the storedvalue.
Full is detected when the voltage decrease of Vbat is 1⁄4%of the stored peak battery value. To avoid interference dueto the resistance of the battery contacts during batteryvoltage sensing, the charge current is regulated to zeroduring t = 210 × POD × tosc, via the regulation pins AO andPWM. At the last period, the Vbat voltage is sensed andstored in a sample-and-hold circuit. This approachensures very accurate detection of the battery fullcondition (minus 1⁄4%).
When battery full is determined by ∆T/∆t, the voltage onthe NTC pin is used as the input voltage to the AD/DAconvertor. The sampling time at ∆T/∆t sensing is given bythe following equation:
(9)
After this initialized sample time the new temperaturevoltage is compared to the preceding AD/DA voltage andthe AD/DA is refreshed with this new value. A certainincrease of the temperature is detected as full battery,depending on the initialization settings. The decision of fulldetection by ∆T/∆t or Vpeak is digitally filtered thus avoidingfalse battery full detection.
tsampling∆T∆t-------
217
POD× PSD× tosc×=
Output drivers
The charge current regulation signal is available at twooutput pins, AO and PWM.
ANALOG OUTPUT
The analog control voltage output at pin 18 (AO) can beused to drive an opto-coupler in mains separatedapplications when an external resistor is connectedbetween AO and the opto-coupler. The maximum currentthrough the opto-coupler diode is 2 mA. The voltage gainof amplifier A2 is typical 11 dB (times 3.5). The DC voltagetransfer is given by the following equation:
Vao = 3.5 × (VLS − 1.35).
The AO output can be used for:
• Linear (DC) applications
• Not mains isolated SMPS with a separate controller
• Mains isolated SMPS, controlled by an opto-coupler.
PULSE WIDTH MODULATOR (PWM)
The LS voltage is compared internally with the oscillatorvoltage to deliver a pulse width modulated output at PWM(pin 15) to drive an output switching device in a SMPSconverter application via a driver stage. The PWM outputis latched to prevent multi-pulsing. The maximum dutyfactor is internally fixed to 79% (typ.). The PWM output canbe used for synchronization and duty factor control of aprimary SMPS via a pulse transformer.
1997 Oct 09 12
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134); note 1.
Note
1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in thevoltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are notviolated; current ratings are valid provided that the power rating is not violated.
QUALITY SPECIFICATION
General quality specification for integrated circuits: SNW-FQ-611E.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Voltages
VP positive supply voltage −0.5 − 11.5 V
VoLED output voltage at pin 5 −0.5 − 15 V
Vn voltage at pins PWM, LS and NTC −0.5 − +VS V
VIB voltage at pin 2 −0.5 − 1.0 V
Currents
IVS current at pin 16 −3 − +0.01 mA
IVsl current at pin 13 −1 − +0.3 mA
IoLED output current at pin 5 − − 12 mA
IAO output current at pin 18 −10 − +0.05 mA
IoPWM output current at pin 15 −15 − +14 mA
IRref current at pin 20 −1 − +0.01 mA
IP positive supply current Tj < 100 °C − − 30 mA
IP(stb) supply standby current VP = 4 V − 35 45 µA
Dissipation
Ptot total power dissipation Tamb = +85 °CSOT146-1 − − 1.2 W
SOT163-1 − − 0.6 W
Temperatures
Tamb operating ambient temperature −20 − +85 °CTj junction temperature − − +150 °CTstg storage temperature −55 − +150 °C
1997 Oct 09 13
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
CHARACTERISTICSVP = 10 V; Tamb = 25 °C; Rref = 62 kΩ; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies; pins V P, VS, Rref and Vsl
VP supply voltage 5.5 − 11.5 V
IP supply current outputs off; VP = 11.5 V − 4 6 mA
Istb standby current VP = 4 V − 35 45 µA
Vclamp clamping voltage (pin 12) Iclamp = 30 mA 11.5 − 12.8 V
Vstart start voltage 6.1 6.4 6.7 V
VLSP low supply protection level 5.1 5.3 5.5 V
VS source voltage (stabilized) IS = 2 mA 4.14 4.25 4.36 V
VSL LED source voltage ILED = 50 µA 4.05 4.25 4.45 V
Vref reference voltage Iref = 20 µA; VP = 10 V 1.21 1.25 1.29 V
TCVref temperature coefficient of thereference voltage
Tamb = 0 to 45 °C;Iref = 20 µA; Vref = 1.25 V
0 ±60 ±120 ppm/K
∆Vref/∆VP power supply rejection ratio ofthe reference voltage
f = 100 Hz; VP = 8 V;∆VP = 2 V (p-p)
−46 − − dB
∆Vref load rejection of sourcevoltage
∆IS = 20 mA; VP = 10 V − − 5 mV
IRref current range of referenceresistor
10 − 100 µA
Charge current regulation; pins IB and R ref
IIB/Iref fast charge ratio VIB = 0
Iref = 10 µA 0.93 1.03 1.13
Iref = 100 µA 0.93 1.0 1.07
VthIB threshold voltage at pin IB Tamb = 25 °C −2 − +2 mV
Tamb = 0 to 45 °C −3 − +3 mV
IIB charge current top-off mode; VIB = 0 2.6 3.2 3.8 µA
IIB(max) maximum charge current voltage regulation fullNiCd/NiMH battery; VIB = 0
9 10.5 12 µA
IIB(Lmax) maximum load current open battery; VIB = 0 34 42 50 µA
IIB(LI) input leakage current currentless mode − − 170 nA
Refresh; pin RFSH
VRsense sense resistor voltage Irefresh = VIB/ Rsense; refreshmode; Irefresh = 18 mA
75 100 125 mV
VRFSH refresh voltage forprogramming start of refresh
NiCd/NiMH 0 − 250 mV
Vbat voltage at pin Vbat fordetecting end of refresh
NiCd/NiMH 0.96 1.0 1.04 V
Isource(max) maximum source current VIB = 75 mV; VP = 10 V;VRFSH = 2.7 V; Tamb = 25 °C
1.4 2 2.6 mA
1997 Oct 09 14
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
VRFSH(max) maximum refresh voltage IRFSH = 1 mA 2.7 − − V
VRFSH(off) voltage at pin RFSH whenrefresh is off
700 770 840 mV
Temperature related inputs; pins NTC and MTV
VNTCh input voltage at pin NTC fordetecting high temperature
pin MTV open-circuit 0.9 1 1.1 V
MTV setting 0.95MTV MTV 1.05MTV V
VNTCh(hy) hysteresis of VNTCh − 80 − mV
VNTCl input voltage at pin NTC,detecting low temperature
2.7 2.8 2.9 V
VNTCl(hy) hysteresis of VNTCl − 75 − mV
VNTC(co) input voltage at pin NTC fordetecting temperature cut-off
0.7MTV 0.75MTV 0.8MTV V
VNTC(bat) maximum input voltage at pinNTC for detecting battery withNTC
3.22 3.3 3.38 V
INTC input current at pin NTC VNTC = 2 V −5 − +5 µA
VMTV voltage level at pin MTV default (open-circuit) 0.95 1 1.05 V
0.5 − 2.5 V
∆VNTC/VNTC ∆T/∆t detection level VNTC = 2 V; Tj = 0 to 50 °C − −0.25 − %
Voltage regulation
Vreg regulation voltage LiIon; Iref = 20 µA 1.34 1.37 1.40 V
SLA; Iref = 20 µA 1.59 1.63 1.67 V
NiCd and NiMH;pin Vstb open-circuit
1.30 1.325 1.35 V
NiCd and NiMH; Vstb = 1.5 V 0.99Vstb Vstb 1.01Vstb V
open battery 1.86 1.9 1.94 V
TCVreg temperature coefficient ofregulation voltage
Vreg = 1.37 V;Tamb = 0 to 45 °C
0 ±60 ±120 ppm/K
gm transconductance ofamplifier A3
Vbat = 1.9 V;no battery mode
− 2.0 − mA/V
Program pin V stb
Vstb open voltage at pin Vstb 1.30 1.325 1.35 V
Vstb(im) voltage at pin Vstb forprogramming inhibit mode
0 − 0.8 V
Vstb(st) voltage at pin Vstb forprogramming voltageregulation at standby
NiCd and NiMH 1.0 − 2.2 V
Vstb(tc) voltage at pin Vstb forprogramming trickle charge atstandby
NiCd and NiMH 2.6 − VS V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1997 Oct 09 15
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
Program pins; PSD, POD and PTD
V4,6,7 voltage level at pins PSD,POD or PTD
default (open-circuit) 1.9 2.1 2.3 V
V4,6,7(1) voltage level at pins PSD,POD or PTD for programmingthe divider = 1
0 − 1.2 V
V4,6,7(2) voltage level at pins PSD,POD or PTD for programmingthe divider = 2
1.6 − 2.5 V
V4,6,7(4) voltage level at pins PSD,POD or PTD for programmingthe divider = 4
3.1 − VS V
IPODsink protection current formulti-LED indication
VPOD = 1.5 V 8 10 12 mA
IPTDsink full battery current formulti-LED indication
VPTD = 1.5 V 8 10 12 mA
IPSDsink refresh current for multi-LEDindication
VPSD = 1.5 V 8 10 12 mA
ILI input leakage current VPOD = 4.25 V;VPTD = 4.25 V; VPSD = 4.25 V
0 − 50 µA
Program pin FCT
VFCT(SLA) voltage level for detecting anSLA battery
0 − 0.7 V
VFCT(Lilon) voltage level for detecting aLiIon battery
0.9 − 1.6 V
VFCT(or) voltage level for programming∆T/∆t or Vpeak as fast chargetermination
NiCd and NiMH 2.0 − 3.3 V
VFCT(and) voltage level for programming∆T/∆t and Vpeak as fastcharge termination
NiCd and NiMH 3.7 − VS V
VFCT voltage level at pin FCT default (open-circuit) 2.3 2.6 2.9 V
Program pin LED
VLED(m) output voltage level forprogramming multi-LEDindication
0 − 2.5 V
VLED(s) output voltage level forprogramming single LEDindication
3.1 − VP V
Isink(max) maximum sink current VLED = 1.5 V 8 10 12 mA
ILI(LED) input leakage current VLED = 10 V 0 − 70 µA
VLED = 0.6 V 0 − 5 µA
Vo(max) maximum output voltage − − 15 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1997 Oct 09 16
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
Output drivers; AO, LS and PWM
IAO(source) analog output source current VAO = 3 V (p-p); VLS = 2.8 V −9 − 0 mA
IAO(sink) analog output sink current VAO = 3 V (p-p); VLS = 1.2 V 50 − − µA
gm1 transconductance ofamplifier A1
VIB = 50 mV − 250 − µA/V
Gv1,2 voltage gain of amplifiersA1 and A2
VAO = 3 V (p-p) − 72 − dB
Gv2 voltage gain of amplifier A2 VAO = 2 V (p-p) − 11 − dB
ILS(source) maximum source current(pin LS)
VLS = 2.25 V −25 −21 −16 µA
ILS(sink) maximum sink current(pin LS)
VLS = 2.25 V 16 21 25 µA
IOH(PWM) HIGH level output current VPWM = 3 V −19 −15 −11 mA
IOL(PWM) LOW level output current VPWM = 0.7 V 10 14 18 mA
δPWM maximum duty factor − 79 − %
Battery monitor; V bat
IVbat battery monitor input current Vbat = 1.85 V − 1 − nA
Vbat voltage range of Vpeakdetection
0.3 − 2 V
∆Vbat/Vbat Vpeak detection level withrespect to top level
Vbat = 1.85 V; Tj = 0 to 50 °C − −0.25 − %
∆Vbat voltage resolution for Vpeak − 0.6 − mV
Protections; V bat
Vbat(l) maximum voltage at pin Vbatfor detecting low batteryvoltage
0.25 0.30 0.35 V
Oscillator; pin OSC
Vosc(H) HIGH level oscillatorswitching voltage
− 2.5 − V
Vosc(L) LOW level oscillator switchingvoltage
− 1.5 − V
fosc(min) minimum oscillator frequency Rref = 125 kΩ; Cosc = 400 pF 20.9 23 25.1 kHz
fosc(max) maximum oscillator frequency Rref = 12.5 kΩ; Cosc = 400 pF 158 174 190 kHz
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1997 Oct 09 17
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
APPLICATION INFORMATION
handbook, full pagewidth
MB
H06
8
VP
1213
VS
16
NT
C8
C3
100
nF
4.25
V
NT
C10
kΩ
(25
o C)
R19
75 k
Ω
MT
V9
FC
T11
Vst
b1
Vba
t19
Rre
f20
OS
C14
GN
D3
R16
R15
270
Ω
R24
80 k
Ω(0
.1%
)
R17
R20
∆T/∆
tan
dV
peak
∆T/∆
tor
Vpe
ak
Lilo
nS
LA
R21
P2
R22
P1
Tm
axad
just
.
Vre
gad
just
.
8.2
kΩ 130
kΩR
18
24 k
Ω47
kΩ
47 k
Ω
16 k
Ω15
kΩ
12 k
Ω
Rse
nse
(1A
ref
resh
)
R14
0.
1 Ω
(1)
NiC
d 9
NiC
dN
iMH
3/6/
9 ce
ll
SLA
2/4/
6 ce
ll
Lilo
n1/
2/3
cell
NiM
H 9
SLA
6Li
lon
3
NiC
d 6
NiM
H 6
SLA
4Li
lon
2
NiC
d 3
NiM
H 3
(3)
SLA
2Li
lon
1
R25
40 k
Ω(0
.1%
)
R23
62 k
Ω(1
A fa
stch
arge
)C
422
0pF
C5
470
µF
R26
8 kΩ
(0.1
%)
R28
10 k
Ω(0
.1%
)R
278
kΩ(0
.1%
)
Vsl
5LE
D
:4 :16
PO
DV
S
GN
Dpr
otec
tion
D5fa
st
D4
D8
33 k
Ω
R6
33 k
Ω
R7
:4 :17
PT
DV
S
GN
D10
0%
D6
D2
D3
BA
W62
33 k
Ω
R8
33 k
Ω
R9
:4 :14
PS
D
15P
WM
SM
PS
mod
e
linea
r m
ode
18A
O
17LS
10R
FS
H
2IB
VS
GN
Dre
fres
h
D6
33 k
Ω
R10
33 k
Ω
R11
sing
lem
ulti
LED
R5
750 Ω
R2
62 Ω
R1 1 kΩ
R3
1.5
kΩ
no-
batte
ry
TR
3B
C33
7
TR
2B
C33
7
C1
100
µF
TR
1B
D23
1
D1
BY
D74
D
VI (
DC
)>13
V
R4
3.9
kΩ
L1(S
MP
S o
nly)
VI (
DC
)7
to 1
8 V
400
µHB
YV
28(o
nly
for
mor
e th
an3
cells
R13
(2)
5.1
kΩ(0
.15A
top
off)
C2
1.5
nF
R12
0 Ω (R
b)
TE
A11
02
refr
esh
TR
4T
IP11
0 6 kΩ
LOA
D
only
for
Fig
.4 B
asic
test
boa
rd d
iagr
am.
(1)
or
if n
ot a
pplic
able
.
(2)
(3)
R14
100
mV
I refr
esh
--------
--------
----=
R14
100
mV
I fas
tch
ear
g–
--------
--------
--------
-----
=
R13
R14
I top
off
–× 3
µA
--------
--------
--------
--------
----=
R23
1.25
R13
×R
14I fa
stch
ear
g–
×----
--------
--------
--------
--------
--------
---=
1997 Oct 09 18
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
Fig.5 Linear application diagram.
handbook, full pagewidth
MBH069
13 12VP
R10200 kΩ(1%)
R9100 kΩ(0.1%)
Vsl
16VS
8NTC
9MTV
11FCT
1Vstb
19Vbat
20Rref
14OSC
3GND
5LED
(Rsupply = 270 Ω for more than 3 NiCD cells)
(D2 for more than 3 NiCD cells)
D1
POD
PTD
6
7
TEA1102
VS
GND
VS
GND
PSD4
PWM15
AO18
RFSH10
LS17
IB2
VS
GND
:4
:1
:4
:1
:4
:1
R45.1 kΩ(75 mA top off)
(Rb)
TR2BC337
R3180 Ω
C2 1.5 nF
R5 0.22 Ω
Rsense
R11 kΩ
R21.5kΩ
R610 kΩ
TR1 BD231VI (DC)
7 to 11.5 V
C1100 µF
C5470 µF
C3
100 nF
4.25 V
SLA = 0 ΩLilion = 4.3 kΩ
NiCd/NiMH = ∞
R7
C4220 pF(fosc =
75 kHz)
R862 kΩ(0.5 Afastcharge)
− battery
+ battery
NiCdNiMH3 cells
SLA2 cells
Lilon1 cell
1997 Oct 09 19
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
Fig.6 Component side of printed-circuit board (test board).
handbook, full pagewidth
MBH073
TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN
R28
R6
Vsense
D1
R14D3D2
D6
D5
D4
D7
R19
R2
C3
C7
R26
1L 2L 3L
R27
R25
P2Vstb
R24
C6
C4
C2
R16
R17R20R21R22
R29 R12
R10R4R3 R15 R23
R30
R13
GND
GN
D
Ib
Vsl
R11
R7
R8
R9R18
R5
MTV
FCT
SLALi-IondT/dt or VdT/dt and V
TR2
numberof
cells
LIN
PW
M
PWM
NTC
NTCP1
refresh
fast-charge
protection
100%
no-battery
−Vin −BAT
+Vin
+Vs
+BAT
1
PT
D
L1
D8
TR1
TR4
TR3
R1C1
C5refresh
D9D10
LIN
:4PS
D:1
:4PO
D:1
S-LE
D-M
Vbat
1997 Oct 09 20
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
Fig.7 Track side of printed-circuit board (test board).
handbook, full pagewidth
MBH072
86.35
81.28
Dimensions in mm.
1997 Oct 09 21
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
Fig.8 Component side of printed-circuit board (linear application) scale 1 : 1.
handbook, full pagewidth
MBH071
TEA1102 LINEAR JB D&A CIC NIJM
+Vin +battery
−Vin −battery
TR1
R1 R8
R3
R2
R4
R5
R6
C3C4
C5
C2
R7
R9
R10
D1PSD
PODPTD
:1 :4
C1
1
TR2
Fig.9 Track side of printed-circuit board (linear application) scale 1 : 1.
handbook, full pagewidth
MBH070
TE
A11
02 L
INE
AR
JB
D&
A C
IC N
IJM
1997 Oct 09 22
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
PACKAGE OUTLINES
UNIT Amax.
1 2 b1 c D E e MHL
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
inches
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
SOT146-192-11-1795-05-24
A min.
A max. b Z
max.wMEe1
1.731.30
0.530.38
0.360.23
26.9226.54
6.406.22
3.603.05 0.2542.54 7.62
8.257.80
10.08.3 2.04.2 0.51 3.2
0.0680.051
0.0210.015
0.0140.009
1.0601.045
0.250.24
0.140.12 0.010.10 0.30
0.320.31
0.390.33 0.0780.17 0.020 0.13
SC603
MH
c
(e )1
ME
A
L
seat
ing
plan
e
A1
w Mb1
e
D
A2
Z
20
1
11
10
b
E
pin 1 index
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
(1)(1) (1)
DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1
1997 Oct 09 23
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
UNITA
max. A1 A2 A3 bp c D (1) E (1) (1)e HE L Lp Q Zywv θ
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
inches
2.65 0.300.10
2.452.25
0.490.36
0.320.23
13.012.6
7.67.4 1.27
10.6510.00
1.11.0
0.90.4 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.10.4
SOT163-1
10
20
w Mbp
detail X
Z
e
11
1
D
y
0.25
075E04 MS-013AC
pin 1 index
0.10 0.0120.004
0.0960.089
0.0190.014
0.0130.009
0.510.49
0.300.29 0.050
1.4
0.0550.4190.394
0.0430.039
0.0350.0160.01
0.25
0.01 0.0040.0430.0160.01
0 5 10 mm
scale
X
θ
AA1
A2
HE
Lp
Q
E
c
L
v M A
(A )3
A
SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
95-01-2497-05-22
1997 Oct 09 24
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
SOLDERING
Introduction
There is no soldering method that is ideal for all ICpackages. Wave soldering is often preferred whenthrough-hole and surface mounted components are mixedon one printed-circuit board. However, wave soldering isnot always suitable for surface mounted ICs, or forprinted-circuits with high population densities. In thesesituations reflow soldering is often used.
This text gives a very brief insight to a complex technology.A more in-depth account of soldering ICs can be found inour “IC Package Databook” (order code 9398 652 90011).
DIP
SOLDERING BY DIPPING OR BY WAVE
The maximum permissible temperature of the solder is260 °C; solder at this temperature must not be in contactwith the joint for more than 5 seconds. The total contacttime of successive solder waves must not exceed5 seconds.
The device may be mounted up to the seating plane, butthe temperature of the plastic body must not exceed thespecified maximum storage temperature (Tstg max). If theprinted-circuit board has been pre-heated, forced coolingmay be necessary immediately after soldering to keep thetemperature within the permissible limit.
REPAIRING SOLDERED JOINTS
Apply a low voltage soldering iron (less than 24 V) to thelead(s) of the package, below the seating plane or notmore than 2 mm above it. If the temperature of thesoldering iron bit is less than 300 °C it may remain incontact for up to 10 seconds. If the bit temperature isbetween 300 and 400 °C, contact may be up to 5 seconds.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SOpackages.
Reflow soldering requires solder paste (a suspension offine solder particles, flux and binding agent) to be appliedto the printed-circuit board by screen printing, stencilling orpressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,thermal conduction by heated belt. Dwell times varybetween 50 and 300 seconds depending on heatingmethod. Typical reflow temperatures range from215 to 250 °C.
Preheating is necessary to dry the paste and evaporatethe binding agent. Preheating duration: 45 minutes at45 °C.
WAVE SOLDERING
Wave soldering techniques can be used for all SOpackages if the following conditions are observed:
• A double-wave (a turbulent wave with high upwardpressure followed by a smooth laminar wave) solderingtechnique should be used.
• The longitudinal axis of the package footprint must beparallel to the solder flow.
• The package footprint must incorporate solder thieves atthe downstream end.
During placement and before soldering, the package mustbe fixed with a droplet of adhesive. The adhesive can beapplied by screen printing, pin transfer or syringedispensing. The package can be soldered after theadhesive is cured.
Maximum permissible solder temperature is 260 °C, andmaximum duration of package immersion in solder is10 seconds, if cooled to less than 150 °C within6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removalof corrosive residues in most applications.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-opposite end leads. Use only a low voltage soldering iron(less than 24 V) applied to the flat part of the lead. Contacttime must be limited to 10 seconds at up to 300 °C. Whenusing a dedicated tool, all other leads can be soldered inone operation within 2 to 5 seconds between270 and 320 °C.
1997 Oct 09 25
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Oct 09 26
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
NOTES
1997 Oct 09 27
Philips Semiconductors Objective specification
Fast charge ICs for NiCd, NiMH, SLA andLilon
TEA1102; TEA1102T
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changedwithout notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.
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Norway: Box 1, Manglerud 0612, OSLO,Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,04552-903 São Paulo, SÃO PAULO - SP, Brazil,Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine : PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,51 James Bourchier Blvd., 1407 SOFIA,Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,72 Tat Chee Avenue, Kowloon Tong, HONG KONG,Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,Tel. +9-5 800 234 7381
Middle East: see Italy
Printed in The Netherlands 417027/1200/03/pp28 Date of release: 1997 Oct 09 Document order number: 9397 750 02913