Course Code: BE101-04 Course Name: …...6 Compare the different parameters of Half wave and...

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Reg No.:_______________ Name:__________________________

APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY

FIRST SEMESTER B.TECH DEGREE EXAMINATION(S), MAY 2019

Course Code: BE101-04

Course Name: INTRODUCTION TO ELECTRONICS ENGINEERING

Max. Marks: 100 Duration: 3 Hours

PART A Answer all questions, each carries 5 marks. Marks

1 Explain the colour coding for resistors. Indicate the colour code for a 33KΩ, 2%

tolerance resistor.

(5)

2 A Germanium diode carries a current of 1 mA at 20°C when a forward bias of

0.15 V is applied. Estimate the reverse saturation current for that diode. Also,

calculate the forward bias voltage required to produce a diode current of 20 mA

at the same temperature.

(5)

3 What do you meant by Q-point? What are the factors affecting the stability of Q-

point?

(5)

4 List the major difference between JFET and BJT. (5)

5 Draw and explain a voltage doubler circuit (5)

6 Explain the working of a zener diode regulator. (5)

7 Explain with block diagram the operation of analog multimeter. (5)

8 Explain the terms accuracy, precision, sensitivity related to electronic measuring

instruments.

(5)

PART B

Answer six questions, one full question from each module and carries10 marks.

Module I

9 Explain the constructional details and features of a carbon film resistor and a

wire wound resistor with the help of neat diagrams.

(10)

OR

10 a) Explain the working principle of electro mechanical relay with diagram. (7)

b) Explain the working principle of transformers with diagram. (3)

Module II

11 Explain the V-I characteristics of a Germanium diode at room temperature. Draw

the V-I characteristics of the same diode at a higher temperature and explain the

effect of temperature on the graph.

(10)

OR

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12 a) Explain the working principle of LEDs? Also discuss the various types of LEDs. (6)

b) Explain about the working of a photo diode. (4)

Module III

13 Explain the input and output characteristics of an NPN transistor in CE

configuration. Indicate active, cut-off and saturation regions in output

characteristics.

(10)

OR

14 Explain an RC coupled amplifier with the frequency response. (10)

Module IV

15 a) Explain the structure and operation of n-channel FET. (6)

b) Draw and explain the drain and transfer characteristic curves of n-channel FET (4)

OR

16 a) Explain the working principle of SCR. Draw and explain the characteristics of

SCR.

(8)

b) Explain holding current and latching currents in SCR. (2)

Module V

17 a) Explain the working of half wave rectifier with diagram (4)

b) Derive the RMS value, DC value, ripple factor of a Half Wave Rectifier. (6)

OR

18 Explain the working of SMPS with block diagram. What are its applications? (10)

Module VI

19 Describe the working of CRT with diagram. (10)

OR

20 a) Draw the block diagram of a digital storage oscilloscope and explain its working. (8)

b) Give the advantages of DSO over CRO (2)

****

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Page 1 of 2

Reg No.:_______________ Name:__________________________


FIRST SEMESTER B.TECH DEGREE EXAMINATION, DECEMBER 2018

Course Code: BE101-04


Max. Marks: 100 Duration: 3 Hours PART A

Answer all questions, each carries 5 marks. Marks

1 Give the specifications of a resistor. The colour bands marked on a resistor are

Blue, Grey, Yellow and Gold. What are the minimum and maximum resistance

values expected from that resistance?

(5)

2 Draw the V-I characteristics of an ideal diode and that of a piecewise linear

model with explanation.

(5)

3 Explain the different configurations of a BJT. Compare the input resistance and output resistance in each case.

(5)

4 Discuss the parameters of a JFET? Obtain the relation connecting JFET

parameters.

(5)

5 Draw the circuit diagram and output waveform of a positive clipper with clipping

level at 5V.

(5)

6 Compare the different parameters of Half wave and Centretapped fullwave

rectifier.

(5)

7 Explain the working of a function generator with diagram. (5)

8 Explain the termsaccuracy, precision, resolution related to electronic measuring

instruments.

(5)

PART B Answer six questions, one full question from each module and carries 10 marks.

Module I 9 What are the various types of capacitors? Explain the constructional details of

any two in detail.

(10)

OR

10 a) How are inductors classified based on their frequency of operation? Discuss the

features and uses of each type.

(6)

b) Discuss the operating principle of transformers. How are they classified based

on voltage levels?

(4)

Module II

11 a) Differentiate between Zener breakdown and Avalanche breakdown (5)

b) What is doping? Explain the mechanism of current flow in a P type (5)

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semiconductor.

OR

12 Explain the working principle of:

(a) Solar cell

(b) Photo diode

(10)

Module III

13 a) Explain with diagram the principle of operation of an npn transistor. (5)

b) Define the parameters β and α of a transistor. Derive the relation between them. (5)

OR

14 a) With a neat circuit diagram explain the working of an RC coupled amplifier. (6)

b) For a given transistor IC is 2mA and IB is 20µA. Find the value of αdc . If the

transistor is replaced by another transistor having β = 50 find the new value of IC.

(4)

Module IV 15 With a neat sketch explain n-channel enhancement type MOSFET. Draw its

drain characteristics.

(10)

OR

16 a) Draw and explain the equivalent circuit of UJT. What is intrinsic stand-off ratio? (6)

b) Compare the features of JFET with BJT (4)

Module V

17 a) Explain the working of a positive clamping circuit. (4)

b) Draw a circuit to clamp a given 10Vpp sine wave negatively at -3V. Also draw

the input and output waveforms.

(6)

OR

18 Draw the block diagram of a DC power supply and explain the functions of each

blocks in it.

(10)

Module VI

19 a) Draw the block diagram of CRO and explain the functions of each block. (6)

b) Explain how CRO is used to measure voltage and frequency. (4)

OR

20 With the help of block diagram, explain how a digital multimeter can be used to

measure parameters like voltage, current and resistance.

(10)

****

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Total Pages: 2 Reg No.:_______________ Name:__________________________

APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY FIRST SEMESTER B.TECH

DEGREE EXAMINATION, DECEMBER 2017 Course Code: BE101-04 Course Name:

INTRODUCTION TO ELECTRONICS ENGINEERING


PART A

Answer all questions, each carries 5 marks. Marks

1 Explain the constructional details of carbon composition resistors. Mention its (5)

features.

2 Explain the V-I characteristics of a PN junction diode. How temperature (5) influences

the diode characteristics.

3 Compare CE, CB and CC configurations of transistor. (5)

4 Briefly explain the V-I characteristics of SCR. (5) 5 Draw the circuit diagram for the

given transfer characteristics and explain its (5) working.

6 With a neat diagram explain the working of a capacitor filter. (5)

7 Briefly explain the block diagram of function generator. (5) 8 Explain any

three performance parameters of instruments. (5) PART B

Answer six questions, one full question from each module and carries10 marks.

Module I

9 a) Explain with necessary diagrams, construction, working and applications of (5) electrolytic

capacitors.

b) Discuss any two types of variable resistors. (5)

OR

10 a) With suitable diagram, describe the working of an electromechanical relay. (5)

b) Compare the electrical behaviour of capacitors and inductors. (5) Module II

11 a) Discuss the formation of “barrier potential” in a PN junction. (5)

b) Explain the working principle of LED. (5)

OR

12 a) Differentiate between zener and avalanche breakdown. (5)

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b) Draw the piece-wise linear model of diode and explain. (5)

Module III

13 a) Explain the output characteristics of transistor in CE configuration and 3 regions (5) of

operation.

b) Determine the operating point for the above circuit. (5)

OR

14 a) With a neat circuit diagram, explain the working of RC coupled amplifier. (7) b)

Explain the need for biasing and stabilisation of transistors. (3)

Module 1V

15 Explain the construction and principle of operation of an enhancement type (10) MOSFET

with its V-I characteristics.

OR 16 With the aid of V-I characteristics, explain the working of N-channel JFET.

(10) Module V

17 a) Derive the expressions for Irms, Idc, ripple factor and rectification efficiency of a (7) half

wave rectifier.

b) Draw the circuit to clamp a sine wave of 20Vp-p positively at 5V. (3) OR

18 a) The input voltage applied to the primary of a 4:1 step down transformer of a full- (7)

wave center-tap rectifier is 230V, 50Hz. If the load resistance is 600Ω and forward

resistance is 20Ω. Determine dc power output, rectification efficiency and PIV.

b) Explain how a zener diode can be used as voltage regulator. (3) Module VI

19 a) With a neat block diagram explain the working of a CRO. (7) b) Explain the uses of

CRO as a measuring instrument. (3) OR

20 a) With a neat block diagram, explain the working of a DSO. (7) b) Draw the block

diagram of digital multimeter and explain. (3)

****

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D B1D227S Pages: 2

Reg. No.____________ Name:____________________

APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY FIRST SEMESTER B.TECH

DEGREE EXAMINATION, JULY 2017 Course Code: BE 101-04 Course Name:

INTRODUCTION TO ELECTRONICS ENGINEERING


PART A

Answer all questions. Each question carries 2 marks

1. What are the specifications of capacitors?

2. Write the colour coding of a resistor having a value 47MΩ with10% tolerance.

3. Draw the structure of carbon composition resistors.

4. Draw the piecewise linear model of a practical diode.

5. What is a varactor diode? Where it is used?

6. Specify two important characteristics of zener breakdown.

7. Specify typical doping details of a BJT.

8. Compare any two features of a photodiode and a phototransistor.

9. Define trans-conductance of an FET.

10. How depletion MOSFET differ from enhancement type MOSFET?

11. Draw the dc loadline characteristics of a BJT with suitable bias.

12. Draw the frequency response of an RC couple amplifier starting with zero frequency.

13. Draw the circuit of a clipper that clips a sinusoidal signal at +3V. Assume practical diodes.

14. Define Ripple factor.

15. Draw the circuit of a voltage doubler.

16. Specify two major advantages of SMPS.

17. Define accuracy and precision of a measuring instrument.

18. How do you convert a moving coil meter into a mulirange voltmeter?

19. How DSO differs from a CRO?

20. How can you verify the condition of an electrolytic capacitor using analog multimeter?

PART B

Answer any 4 complete questions each having 10 marks

21. Draw the common base output characteristics of a transistor and Explain. Indicate all regions

of operation on it. (10)

22. Explain the working principle of mica and electrolytic capacitors. (10)

23. Describe the working principles of (a) LED (b) Solar cell (5+5)

24. Draw the structure of depletion mode MOSFET and explain its working with the help of drain

and transfer characteristics. (10)

25. Write notes on (a) relays (b) type numbering of transistors. (5+5)

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PART C Answer any 2 complete questions each having 10 marks

26. With the help of block diagram, explain the principle of (a) analog multimeter

(b) digital multimeter. (5+5)

27. Design a two level clipping circuit that clips a sinusoidal signal of 1KHz, 10V peak so

that output is flat for 90% of input cycle time. Assume ideal diodes. (10)

28. (a) How CRO can be used to measure phase angle between two signals? (3) (b)

Design a simple zener regulator to regulate an input varying from 10 to 17V to 6V

delivering an output current of 30mA. (7)

D B1D021 Total Pages:3

Page 1 of 3

Reg. No.:___________________ Name: ______________________


FIRST SEMESTER B.TECH DEGREE EXAMINATION, JANUARU 2017 Course

Code: BE101-04



PART A

Answer ALL questions. Each question carries 2 marks

1. The sequence of colour bands in a resistor are: Green, Blue, Yellow and Silver. What

is its resistance value? Write the colour code of 100Ω resistor with 5% tolerance.

2. Write the expression for capacitive reactance. Explain how capacitive reactance varies

with frequency?

3. List any four circuits where you can find inductors.

4. What are the two mechanisms by which carriers move through a silicon crystal?

5. Define static and dynamic input resistance of a silicon diode. Write the typical values

of the resistances.

6. Draw the V-I characteristics of a zener diode and mark its operating region.

7. What are the biasing conditions required for a transistor to work as a switch.

8. Derive the expression for collector current in common emitter configuration and explain

each term in it.

9. What is thermal runaway and how does this affect a transistor?

10. List any four advantages of metal oxide semiconductor FET (MOSFET).

11. Draw and explain the structure of unijunction transistor (UJT).

12. What is pinch-off voltage? Draw the drain characteristics of a junction field effect

transistor (JFET) and mark the pinch-off voltage.

13. Design a circuit to obtain the following transfer characteristics. Assume an ideal diode.

14. Define peak inverse voltage of a diode. Compare PIV of a centre tap rectifier and a

bridge rectifier.


Page 2 of 3

15. Draw the circuit diagram of a halfwave

voltage doubler circuit. Draw the output

wave form for the following input

waveform.

16. For the circuit shown below, find the output voltage across RL and current through the

zener diode.

17. Define sensitivity and accuracy of a measuring instrument.

18. How can you measure the phase difference between two signals (both of them have

same frequency) with a cathode ray oscilloscope (CRO) using Lissajous pattern.

19. What are the uses of function generator?

20. How can you test a PNP transistor using a multimeter? (Assume that the multimeter

does not have a provision to measure hfe or β)

PART B


21.

a. Write a brief description about the constructional details of a wire wound

resistor. (4)

b. How can you reduce the inductive effect in wire wound resistors? (2)

c. What are the advantages and disadvantages of solid state relays over

mechanical relays? (4)

22.

a. Explain how a potential barrier is developed in a PN junction diode? (4)

b. A diode current is 0.6mA when applied voltage is 400mV and 20mA when the

applied voltage is 500mV. Find ‘n’, the ideality factor. Assume VT = 26mV.

(3) c. Explain the working principle of a varactor diode.

(3)

23.


Page 3 of 3

a. With reference to the following circuit, draw the

DC load line and determine the Quiescent-point.

(Given VCC = 10V, VBB = 2V, RC = 1KΩ,

RB=100KΩ, β=200 and Vbe = 0.7V)

(5)

b. Draw and explain the output characteristics of an

NPN transistor in commonemitter (CE) configuration.

(5)

24.

a. What are the major differences between JFET and bipolar junction transistor

(BJT). (5)

b. Draw the structure of an n-channel JFET and explain its principle of operation.

(5)

25.

a. Draw the frequency response characteristics of an RC coupled amplifier and

state the reasons for the reduction of gain at lower and higher frequencies. (4)

b. Write a brief description about the constructional details of an Aluminium

electrolytic capacitor. (4) c. Describe the working principle of LED. (2)

PART C


26.

a. Draw the circuit diagram of a centre-tapped full wave rectifier and explain its

working. (5)

b. What is ripple factor? Derive the expression for ripple factor of a full wave

rectifier. (5)

27.

a. Draw the circuit diagram of a double clipper, clipping at +5V and -5V. Explain

its working and draw the input & output wave forms. Assume the

knee voltage of the diode as 0.7V. (5)

b. Explain the working of an analog electronic multimeter with the help of a

schematic diagram. (5)

28. Draw the block diagram of a digital storage oscilloscope and explain the function of

each block. (10)

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