Coupling and Cross-talk Analysis in High Speed Interconnects Md Amimul Ehsan Electrical Engineering...
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![Page 1: Coupling and Cross-talk Analysis in High Speed Interconnects Md Amimul Ehsan Electrical Engineering and Computer Science Department, University of Kansas.](https://reader036.fdocuments.in/reader036/viewer/2022070414/5697c00b1a28abf838cc82cc/html5/thumbnails/1.jpg)
Coupling and Cross-talk Analysis in High Speed Interconnects
Md Amimul Ehsan
Electrical Engineering and Computer Science Department,
University of Kansas
December 01, 2015
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Outlines Motivation Introduction Signal/Ground Via Near and Far end crosstalk Optimized and non-optimized S/G Via Conclusion
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Motivation Due to technology miniaturization, crosstalk is
becoming increasingly becoming major concern in high speed designs.
Higher integration density, causes electromagnetic radiation in device space.
Merging process technology, mixed materials, system integration.
Coupling noise between the vias is a significant design consideration.
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Objectives Study on coupling and crosstalk which is critical for
signal integrity.
Investigation of via physical dimensions on induced crosstalk.
Near end crosstalk (NEXT) and Far end crosstalk (EFXT) are analyzed for single ended and differential signal via.
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Introduction
2D
Electromagnetic interference that disturbs neighbor is the crosstalk noise.
The time changing electric and magnetic field in signal conductor induce energy to propagate along victim conductor.
Fig. 1: Examples of crosstalk; two conductors sharing same ground [1]
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Impacts of Via Dimensions Placement of signal and ground via.
Via radius.
Via pitch
Oxide insulator thickness (For TSV in 3D IC)
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Signal/Ground Via Pattern
S1S2
S3 S4
G G G G
G
GGG
G
G
G
G
Fig. 2. Via arrangement 4 single ended signals with 12 grounds Fig. 3. Via arrangement 4 single ended
signals with 12 grounds (HFSS)
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Single Ended Via Crosstalk
0 4 8 12 16 20-100
-84
-68
-52
-36
-20
Frequency (GHz)
NE
XT
(d
B)
d = 13 um
d = 18 um
Fig. 4. Near End Crosstalk of single ended signal Via with different pitch
0 4 8 12 16 20-100
-84
-68
-52
-36
-20
Frequency (GHz)
FE
XT
(dB
)
d = 13 um
d = 18 um
Fig. 5. Far End Crosstalk of single ended signal Via with different pitch
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Differential Via Crosstalk
0 4 8 12 16 20-100
-84
-68
-52
-36
-20
Frequency (GHz)
NE
XT
(dB
)
Single Ended
Differential
Fig. 6. Near End Crosstalk of single ended and differential Via
0 4 8 12 16 20-100
-84
-68
-52
-36
-20
Frequency (GHz)
FE
XT
(dB
)
Single Ended
Differential
Fig. 7. Far End Crosstalk of single ended and differential Via
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Optimized Differential S/G Via
Fig. 8. Differential signal assignment of non-optimized TSV
Fig. 9. Differential signal assignment of optimized TSV
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Crosstalk Comparison
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90.0 1.0
-0.001
0.000
0.001
0.002
-0.002
0.003
time, usec
V_N
EX
T
Readout
m1
Readout
m2m2
Time = 39.06 nsecV_NEXT = 0.003 Max
m1Time = 5.115 nsec
V_NEXT = - 0.001 Min
V_N
EX
T (
Vol
ts)
Time (µs)
Fig. 10. Step response simulation in near end crosstalk for non-optimized TSV pattern
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90.0 1.0
0.0000
0.0005
0.0010
0.0015
0.0020
-0.0005
0.0025
time, usec
V_N
EX
T
Readout
m1
Readout
m2 m2Time = 7.015 nsec
V_NEXT = 0.002 Max
m1Time = 86.17 nsec
V_NEXT = - 0.000 Min
Time (µs)
V_N
EX
T (
Vol
ts)
Fig. 11. Step response simulation in near end crosstalk for optimized TSV pattern
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Conclusion This work investigated the via crosstalk noise under high
speed operations and discussed the impacts of various factors affecting crosstalk.
An analytical model can be proposed that could capture the induced coupling noise.
The coupling and crosstalk can be analyzed from the equivalent circuit of the differential pin pattern and can be applied for the design of crosstalk suppression.
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References1. A. W. Barr, “Analyzing Crosstalk and Ground Bounce in Multiconductor Systems
Using SPICE Circuit Simulations,” AMP Journal of Technology, Vol. 3, Nov. 1993.
2. Yi, Y., Liu, Y., Zhou, Y., Becker, W.D. 2009. Minimizing crosstalk in high-speed differential buses by optimizing power/ground and signal assignment. In proc. of 18th IEEE Elect. Perform. Electron. Packag. Sys., Oct. 2009.
3. He, X., W. Wang, and Q. Cao, "Crosstalk modeling and analysis of Through-Silicon-Via connection in 3D integration," PIERS Proceedings, 857-861, Taipei, Mar. 25-28, 2013
4. Qian, L., Xia, Y., Liang, G. 2015. Study on crosstalk characteristic of carbon nanotube through silicon vias for three dimensional integration. Microelectronics Journal, 46, 7, (July 2015), 572–580.
5. Engin, A.E.; Narasimhan, S.R., "Modeling of Crosstalk in Through Silicon Vias," in Electromagnetic Compatibility, IEEE Transactions on , vol.55, no.1, pp.149-158, Feb. 2013
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Thank you