Microsoft PowerPoint - S01_02_Ozawa.pptCost-Effective Fully Tested Die with High-Frequency and High-Throughput
Wafer-Test Solution
Masahide Ozawa Elpida Memory, Inc. Nobuhiro Kawamata FormFactor Inc., Asia
Southwest Test Workshop 2004
Presentation Outline • Mobile RAM introduction • Mobile RAM wafer-level-final-sort tests objectives
and goals • High performance probing technology solution • New probing technology internal qualification • Customer qualification • Follow on work • Summary and conclusion
p. 3
Elpida DRAM Plant
Lowest IDD6, Low Voltage (1.8V), and JEDEC Mobile Functions
* Low Power Mode PASR: Partial Array Self Refresh TCSR: Temperature Compensated Self Refresh
Function
Control min memory size For refresh
Synchronous
2.0mA 0.6mA 0.25mA
Mobile RAM Introduction
Required Density in Cellular Phone
Base Band AVG
2003 2004 2005 2006
p. 6
Bandwidth (Speed) for Cellular Phone
(Source : Elpida)
2003 2004 2005 2006
p. 7
Japanese 3G Market Penetration Plan and SIP demand projection
0
500
1000
1500
2000
2500
3000
Real Time OS
File Size Increasing
HTML Mail Receiving
SIP is re
all y l
Mobile Memory TAM Trend
p. 9
Advanced Mobile RAM KGD Flow • Conventional Wafer Sale Flow
• Elpida Mobile RAM Wafer Sale Flow (Under Evaluation)
Wafer Level BI Test High Speed and High Throughput Wafer Level Final Tests High, Ambient, Cold Test Temperature Tests
Prelaser Tests Redunduncy Post Laser Test
CP-1 CP-1 Mid Speed Mid Speed High Temp Ambient
L/R CP-2
Tested Wafer Sale
Prelaser Tests Redunduncy
Wafer BI CP-1 CP-1 CP-2 CP-2 Low Speed Mid Speed Mid Speed High Speed High Speed
128// 128// 128// 128// 128// BI Temp High Temp Ambient High Temp Low Temp
Mobile RAM Wafer SaleL/R
Wafer Level Final Tests
p. 10
High Performance Probing Solution
• Low TCOO
p. 11
High Performance Probing Solution
200MHz High signal integrity 128 Multi DUT
p. 12
2 4 6 8 10 12 14 16 180 20
0
1
2
-1
3
3V
0V
(V)
p. 13
m6 freq=200.0MHz Far_end_Cross_Talk=-27.557
50 100 150 200 250 300 350 400 4500 500
-50
-40
-30
-20
-10
-60
0
50 100 150 200 250 300 350 400 4500 500
-50
-40
-30
-20
-10
-60
0
%2.3 1 032.0log2030 , %10
volts in Power Measured:V1
FFI Internal Qualification Signal Integrity: Tr/Tf Measurement
54 5652 58
2
m3
m4
t m1-m2 = 0.35nst m3-m4 = 0.45ns S200 Probing TechnologyFFI TRE Probing Technology
(V)
S200 Internal Qualification Results
-3 dB Bandwidth 850MHz
Rise/Fall Time 20%-80% Tr/Tfl 350 pS Skew Channel to Channel +/- 70 pS
Temperature Operation Range -40 to 125 Driver Sharing Level x2 // per Station 128//
Internal Qualification
Southwest Test Workshop 20042004629 Elpida / FFI
• 143MHz tester + 100MHz Mobile RAM – Output pin waveform – DQ signal skew – Input and output voltage margins – Vcc margin – Timing margin – Wafer-to-wafer high-speed binning correlation
Wafer-Level Final-Sort Test Customer Qualification
p. 17
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175 200 225 DUT to DUT Signal Skew [ps]
Fr eq
ue nc
y S200
S200 Probing Technology
Customer qualification: VIH/VIL Margin Shmoo
0
1.8
2.5
Vcc (V)
1.0 1.2 1.4 1.6 1.8 VIH(V) 0 0.2 0.4 0.6 0.8 VIL(V)
S200 Probing Technology
0
1.8
2.5
Vcc (V)
0 100 200 300 400 (ps) 100 200 400 600 800 (ps) tHOLD-Control tHOLD-Address
S200 Probing Technology S200 Probing Technology
FFI TRE Probing TechnologyFFI TRE Probing Technology
p. 20
0
2000
p. 21
Summary and Conclusion
Wide temperature
To be applied to133MHz Mobile RAM at device speed testing
On-spec testing
1.1x throughput
100MHz beta evaluationHigh-frequency testing
Follow-on Work • Elpida Memory Inc.
– 100MHz Mobile RAM production using S200 – Evaluation of 133MHz Mobile RAM at-device-speed testing
with S200
• FormFactor, Inc. – Customer qualification for 133MHz and beyond – Beta site evaluation of multi-bit FLASH memory 100MHz
and beyond
p. 23
Southwest Test Workshop 20042004629 Elpida / FFI
• Elpida – Masahide Ozawa – Yozo Saiki – Koji Mine – Katsuji Hoshi – Yosuke Kawamata – Hajime Sasamoto – Satoshi Gomi – Tomoharu Yamaguchi
• FormFactor – Norishige Kawashimo – Mark Brandemuhel – Chuck Miller – Jim Tseng – Ken Matsubayashi – Nobuhiro Kawamata
Project Members