COSMA Software with: Edit menu for process recipe edition, Adjust menu for process optimizing, ...

COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,

Adjust menu for process optimizing,Adjust menu for process optimizing,

Maintenance menus for complete equipment Maintenance menus for complete equipment

control and service via internet with VPN (Virtual control and service via internet with VPN (Virtual

Private Network).Private Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data

comparison).comparison).

Equipment Control & SoftwareEquipment Control & Software

A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels

ActionActionss

ConstructorConstructor

LotsLotsActionsActions

ProcessProcess

Closed-loopClosed-loop

Server for Server for GUIGUI

COSMA COSMA SupervisorSupervisor

Embedded Embedded control PUcontrol PU

Embedded Embedded control control functionfunction

COSMA COSMA ControllerController

Process Process ControllerController

Device Device ControllersControllers

Physical Physical devicesdevices

OperatorOperator

Remote GUIRemote GUI

PC UserPC User

MonitorinMonitoringg



Diagram ModesDiagram Modes

Stand-byStand-byModeMode

Step by stepStep by step

ModeMode

ProductionProductionModeMode

OptimizationOptimizationModeMode

ConstructorConstructorModeMode

Shut downShut downModeMode

NormalNormal

ErrorsErrors

OperatorOperator

ProductionProduction

MaintenanceMaintenance

ConstructorConstructor

A Communicant ToolA Communicant Tool

COSMA COSMA SupervisorSupervisor

COSMACOSMAGUIGUI

Customer Customer Ethernet NetworkEthernet Network

Process Process Control Unit Control Unit

(1)(1)

Process Process Control Unit Control Unit

(2)(2)

Device Device Control (1)Control (1)

EthernetEthernet

Device Device Control (2)Control (2)

EthernetEthernet

WANWAN

VPNVPNADSLADSLFix IPFix IP

FirewalFirewalll

DedicatedDedicatedEthernet Ethernet networknetwork

SystemSystemMatch BoxMatch Box

Shuttle LiftShuttle Lift

RF GeneratorRF Generator

TMP ControlTMP Control

ReactorReactor

TMPTMP

Gas BoxGas Box

SystemSystem

Electronic controlElectronic control

Process pumping portProcess pumping portLiftLift

Gate valveGate valve

Match BoxMatch Box

Gas boxGas box

TMPTMP

Principle of PECVD Principle of PECVD ReactorReactor

Vacuum ChamberVacuum Chamber

ShuttleShuttle

TMP

Cathode (Gas inlet)

Compressed

Air

LiftLift



TMP

Cathode (Gas inlet)

Compressed

Air

LiftLift

ShuttleShuttle


Heating cableHeating cable


ShuttleShuttle

Compressed

Air

LiftLift

TMP

Infra-red reflectorsInfra-red reflectors

Cathode (Gas inlet)

ProcessProcesspumppump


Heating cableHeating cable


ShuttleShuttle

Compressed

Air

LiftLift

TMP

Cathode (Gas inlet)


Infra-red reflectorsInfra-red reflectors

RFMatch

P L A S M A

Laser InterferometerLaser Interferometer

PUMPING PRINCIPLE of PLASMA PUMPING PRINCIPLE of PLASMA REACTORREACTOR

Gas inletGas inlet

Process pumpProcess pump

PumpinPumpingg

ringring

VerticalVerticalpipespipes

Low half Low half pumpinpumpin

ggringring

ReactorReactor


Shuttle DownShuttle Down

Shuttle UpShuttle Up

SymetricSymetricalreactor alreactor for low for low stress stress

depositiodepositionn

PumpingPumpingpipepipe

ReactorReactor

LiftLift

Shuttle in Up positionShuttle in Up position


Shuttle in Down positionShuttle in Down position

Penning gaugePenning gauge

LiftLift


SymetricalSymetrical

pumpingpumping

ReactorReactor

REACTOR PRINCIPLEREACTOR PRINCIPLEPressurized Pressurized

reactorreactorP2P2

PLASMA

RootsRootsTMPTMP

P1P1

P1 >> P2P1 >> P2No film No film

contaminationcontamination

Outgasing from the Outgasing from the cold walls leads to film cold walls leads to film

contaminationcontamination

Cold wallsCold walls

PLASMA300°C300°C

Standard PECVDStandard PECVD

TMPTMP

CathodeCathode

AnodeAnode

CLEANING PRINCIPLECLEANING PRINCIPLE

Walls at 300Walls at 300°°CC

TMPTMP

Close gate valveClose gate valve

RootsRoots


Send N2Send N2

TMPTMP

Gate valve closedGate valve closed

RootsRoots

P2P2

Gas inletGas inlet

P1P1

P2 >> P1P2 >> P1 N2N2 goes in process chamber through the leaks goes in process chamber through the leaks

LeaksLeaks


Send N2Send N2

TMPTMP

Gate valve closedGate valve closed

RootsRoots

P2P2

Gas inletGas inlet

P1P1

P2 >> P1P2 >> P1

300°C

P1

No fluorine atoms can go in the process chamber.No fluorine atoms can go in the process chamber.

No corrosion of vacuum vessel.No corrosion of vacuum vessel.

The latest submicron technology needs precise monitoring:The latest submicron technology needs precise monitoring: Automatic endpoint detection,Automatic endpoint detection, CCD camera with magnification = 50 X,CCD camera with magnification = 50 X, Laser beam diameter ≤ 50 Laser beam diameter ≤ 50 m.m.

Monitoring DepositionMonitoring Deposition

A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

The plasma confined The plasma confined in a in a uniformly uniformly heated process heated process chamberchamber

Excellent uniformitiesExcellent uniformities in in thickness and refractive thickness and refractive index.index.

Symetrical designSymetrical design of the process of the process chamberchamber

Stress controlStress control of films. of films.

In situ monitoringIn situ monitoring of deposition rate of deposition rate

Precise thicknessPrecise thickness of of deposited layersdeposited layers

In situ plasma In situ plasma cleaningcleaning with no with no corrosion of the corrosion of the process chamber. process chamber.

No memory effectNo memory effect No mechanical No mechanical cleaningcleaning

BENEFITSBENEFITS

DevelopmentDevelopment is is carried out through carried out through Design of Experiments Design of Experiments ((DOEDOE))

Optimisation of film Optimisation of film properties: properties:

deposition rate,deposition rate, refractive index,refractive index, uniformities (Thickness, uniformities (Thickness,

Index),Index), KOH, TMAH, etch rates,KOH, TMAH, etch rates, stress,stress, breakdown voltage.breakdown voltage.

Customer Customer BenefitBenefit

Process modelization Process modelization enables fast matching enables fast matching with customer with customer requirements.requirements.

Guaranteed Process Guaranteed Process ResultsResults

Process DevelopmentProcess Development

Some Process SpecificationsSome Process Specifications


DepositioDeposition processn process

DepositioDeposition raten rate

(nm/min)(nm/min)

Etch rate Etch rate inin

KOH (Si3N4)KOH (Si3N4)

BOE BOE (SiO2)(SiO2)

CompresCompres-sive -sive stressstress

(MPa)(MPa)

BreakdowBreakdown voltagen voltage

(MV/cm)(MV/cm)

Refractive Refractive index index

uniformityuniformity

DepositioDeposition n

UniformitUniformityy

Si3N4Si3N4 120120 <10 nm/h<10 nm/h -150-150 // ±0,2%±0,2% ±2%±2%

SiO2SiO2 400400 // -100-100 // ±0,05%±0,05% ±2%±2%

SiO2SiO2 150150 260 260 nm/minnm/min

-30-30 1010 ±0,2%±0,2% ±2%±2%

Refractive Index Versus SiH4 and NH3 Flow Refractive Index Versus SiH4 and NH3 Flow RatesRates

Refractive Index Refractive Index = 2= 2

Si3N4 Refractive IndexSi3N4 Refractive Index

Stress Versus SiH4 and NH3 Flow Stress Versus SiH4 and NH3 Flow RatesRates Stress = -100 Stress = -100

MPaMPa

KOH Rate = 50 Å/hKOH Rate = 50 Å/h

Si3N4 Film PropertiesSi3N4 Film Properties

KOH Etch Rate Versus SiH4 and KOH Etch Rate Versus SiH4 and NH3NH3

Stress Versus SiH4 and NH3 Flow Stress Versus SiH4 and NH3 Flow RatesRates

Zero stress areaZero stress area

Si3N4 Film StressSi3N4 Film Stress

Refractive Index and RI uniformity versus pressure and N20 flow Refractive Index and RI uniformity versus pressure and N20 flow raterate

SiO2 Refractive IndexSiO2 Refractive Index

Refractive Index = 1.4570 ± 0.0005Refractive Index = 1.4570 ± 0.0005RI uniformity = ± 0.0005RI uniformity = ± 0.0005

Stress Versus Pressures and N2O Flow Stress Versus Pressures and N2O Flow RateRate

BOE Etch Rate Versus Pressure and BOE Etch Rate Versus Pressure and N2ON2O

Stress = - 50 MPaStress = - 50 MPa

BOE Rate < 250 nm/minBOE Rate < 250 nm/min

SiO2 Film PropertiesSiO2 Film Properties

SiO2 Breakdown VoltageSiO2 Breakdown VoltageBreakdown Voltage Versus Pressure and Breakdown Voltage Versus Pressure and SiH4SiH4

BreakdownBreakdownVoltage Voltage

= 10 MV/cm= 10 MV/cm

Multi-step process Multi-step process recipesrecipes enables perfect enables perfect and stable plasma and stable plasma ignition.ignition.

This gives rise to: This gives rise to: Repetitive film growth,Repetitive film growth, Good adhesion of films Good adhesion of films

on substrate,on substrate, Stable film properties.Stable film properties.

Process is terminated by Process is terminated by an Ar or He plasma in an Ar or He plasma in order to scavenge the order to scavenge the powders electrostatically powders electrostatically trapped in the plasma.trapped in the plasma.

This gives rise rise to: This gives rise rise to: No contamination of No contamination of

deposited films,deposited films, Shorter plasma cleaning,Shorter plasma cleaning, No pinhole.No pinhole.


Process PerformanceProcess Performance

Corial D250 DescriptionCorial D250 DescriptionDeposition chamber, including:Deposition chamber, including: Vacuum vessel,Vacuum vessel, Pressurized isothermal plasma reactor,Pressurized isothermal plasma reactor, Uniform heating with two heating Uniform heating with two heating cablescables Temperature control of plasma reactor Temperature control of plasma reactor with Eurotherm 2408 and computor with Eurotherm 2408 and computor interface,interface, Infra-red reflectors.Infra-red reflectors.

Electronic control, including:Electronic control, including: Physical device controllers with Physical device controllers with embedded software running on Celeron embedded software running on Celeron 400 MHz, 128 Mo DRAM and fast 400 MHz, 128 Mo DRAM and fast ethernet,ethernet, Process controller with PC running at Process controller with PC running at 1.3 GHz, 512 Mo DRAM, fast ethernet 1.3 GHz, 512 Mo DRAM, fast ethernet communication and 80 Go hard disk.communication and 80 Go hard disk.

Pumping system with:Pumping system with: Alcatel dry pump ADP 122P (95 mAlcatel dry pump ADP 122P (95 m33/h),/h), Alcatel turbo pump ATH 31 C (30 l/s),Alcatel turbo pump ATH 31 C (30 l/s), Valves, Penning and two capacitance Valves, Penning and two capacitance gauges,gauges, Pressure control with N2 MFC,Pressure control with N2 MFC, N2 venting line.N2 venting line.

COSMA control software COSMA control software operating operating under Linux with Edit, Optimize, process under Linux with Edit, Optimize, process Run and Maintenance menus.Run and Maintenance menus.

PC PC operating under Windows with:operating under Windows with: Intel Pentium processor and 512 Mo Intel Pentium processor and 512 Mo RAM,RAM,17” LCD colour monitor,17” LCD colour monitor, Firewall and VPNFirewall and VPN..

Gas box equipped with Gas box equipped with 6 gas lines 6 gas lines with Horiba MFCs and electropneumatic with Horiba MFCs and electropneumatic valves for SiH4, N20, NH3, N2, He and valves for SiH4, N20, NH3, N2, He and SF6 gases.SF6 gases.

300 W RF generator and automatic 300 W RF generator and automatic match box match box from ENI.from ENI.

Very high quality of deposited films:Very high quality of deposited films: Tunable refractive indexTunable refractive index Low etch rates in BOE and KOHLow etch rates in BOE and KOH High breakdown voltageHigh breakdown voltage No pinholesNo pinholes

Excellent uniformitiesExcellent uniformities (thickness & refractive (thickness & refractive index)index)

Stress controlStress control of films from tensile to of films from tensile to compressivecompressive

Efficient in situ plasma cleaning with Efficient in situ plasma cleaning with NONO corrosion of vacuum vessel, corrosion of vacuum vessel, NONO memory effect memory effect and and NONO manual cleaning required. manual cleaning required.

Corial PECVD FeaturesCorial PECVD Features

COSMA Software with: Edit menu for process recipe edition, Adjust menu for process optimizing, ...

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