CONDUCTORS, DIELECTRICS, AND CAPACITANCE.pdf

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CONDUCTORS, DIELECTRICS, AND CAPACITANCE

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CONDUCTORS, DIELECTRICS, AND CAPACITANCE.pdf

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  • CONDUCTORS, DIELECTRICS,

    AND CAPACITANCE

  • CURRENT AND CURRENT

    DENSITY

    Current - is defined as electric charges in motion or defined as a rate of movement

    of a charge passing in a given reference

    point (or crossing in a given reference

    plane) of one coulomb per second

  • CURRENT AND CURRENT

    DENSITY

    Current - is defined as the motion of positive charges (even though conduction

    in metals takes place through the motion

    of electrons). The unit of current is ampere

    (A) and current is symbolized by I,

    dt

    dQI ( convention current)

  • CURRENT AND CURRENT

    DENSITY

    Consider the field theory, the events occurring at a point was the main concerned rather than within the large region, and in this case the concept of current density were important matter.

    Current density - is defined as a vector represented by J and measured in amperes per square meter (A/m2).

    The increment of current I crossing an incremental surface, S, is given as;

  • CURRENT AND CURRENT

    DENSITY

    ( normal to the current

    density)

    or,

    ( current density is not

    perpendicular to the

    surface)

    SJI N

    SJI

  • CURRENT AND CURRENT

    DENSITY

    And the total current is obtained by integrating,

    ( convention current) S dSJI

  • CURRENT AND CURRENT

    DENSITY

    Current density can be related to the velocity of volume charge density at a given point. Consider the element of charge Q = vv = vSL, as shown in the figure .

  • CURRENT AND CURRENT

    DENSITY

    Assume that the charge element is

    oriented within the

    edges and parallel to

    the coordinate axes,

    and it shall only

    posses an x

    component of

    velocity.

  • CURRENT AND CURRENT

    DENSITY

    With respect to the time interval t, the element of charge has moved a distance x, as shown in the figure.

  • CURRENT AND CURRENT

    DENSITY

    Therefore a charge Q = vSx has moved through a reference plane perpendicular to the direction of motion in a time increment t, and the resultant current is

    t

    xS

    t

    QI

  • CURRENT AND CURRENT

    DENSITY

    And taking the limit with respect to time,

    where: vx represents the x component of the velocity, v.

    And in terms of current density,

    xSI

    xx vJ

  • CURRENT AND CURRENT

    DENSITY

    and in general

    where: J or vv is the convention current density

    vJ

  • Sample Problem 1

    The vector current density is given as J =

    (4/r2)cos ar + 20 e-2r sin a r sin cos

    a A/m2. (a) Find J at r = 3, = 0, = .

    (b) Find the total current passing through

    the spherical cap r = 3, 0 < < 20O, 0 < < 2, in the ar direction.

  • CONTINUITY OF CURRENT

    The principle of conservation of charge states simply that charges can be neither created nor destroyed, although equal amounts of positive and negative charge may be simultaneously created, obtained by separation, destroyed, or lost by recombination.

    The continuity equation, follow this principle when considering of any region bounded by a closed surface. And the current through the closed surface is

  • CONTINUITY OF CURRENT

    the outward flow of positive charge must

    be balanced by a decrease of positive

    charge (or perhaps an increase of

    negative charge) within the closed surface.

    S dSJI

  • CONTINUITY OF CURRENT

    The current at closed surface, however, is an outward-flowing current and it is the integral form of the continuity equation, and the differential, or point, form is obtained by using the divergence theorem to change the surface integral into a volume integral:

    volS dJdSJ )(

  • CONTINUITY OF CURRENT

    Next represent the enclosed charge Qi by the volume integral of the charge density,

    volvol ddt

    ddJ )(

  • CONTINUITY OF CURRENT

    Keeping the surface constant, the derivative becomes a partial derivative and

    may appear within the integral,

    For an incremental volume,

    volvol

    dt

    dJ

    )(

    dt

    J

    )(

  • CONTINUITY OF CURRENT

    And the point from the continuity equation,

    tJ

    )( (the current, or charge

    per second, diverging

    from a small volume per

    unit volume is equal to

    the time rate of

    decrease of charge per

    unit volume at every

    point)

  • Sample Problem 2

    Assume that an electron beam carries a total current of 500 A in the az direction, and has a current density Jz that

    is not a function of or in the region 0 < < 10-4 m and is zero for < 10-4 m. If the electron velocities are given by vz = 8 x

    107 z m/s, calculate v at = 0 and z =:(a) 1 mm; (b) 2 cm: (c) 1 m.

  • Seatwork

    1. Given the vector current density J =

    102za - 4cos2a A/m

    2: (a) find the

    current density at P( = 3, = 30O, z = 2); (b) determine the total current flowing

    outward through the circular band = 3, 0 < < 2, 2 < z < 2.8.

    Answer 180a 9a A/m2; 518 A

  • Seatwork

    2. Current density is given in cylindrical coordinates as J = - 106z1.5az A/m

    2 in the region 0 20m; for 20 m, J = 0. (a) Find the total current crossing the surface z = 0.1m in the az direction. (b) If the charge velocity is 2 x 10

    6 m/s at z = 0.1 m, find v there. (c) If the volume charge density at z = 0.15 m is -2000 C/m3, find the charge velocity there.

    Answer -39.7 mA; - 15.81 kC/m3; -2900 m/s

  • METALLIC CONDUCTOR

    Metallic Conductor permit a higher-energy level in the valence band to merges smoothly, to a conduction band by the help of kinetic energy produce by an external field that will result in an electron flow.

  • METALLIC CONDUCTOR

    The valence electrons, or conduction, or free, electrons, having a charge Q = -e will move under the influence of an electric field, E, and will experience a force:

    F = - eE

  • METALLIC CONDUCTOR

    And the valence electron velocity (drift velocity) is linearly related to the electric field intensity by the mobility of the electron in a given materials (i.e. free space or crystalline)

    vd = - eE (electron velocity is opposite in

    direction to E)

    where is the mobility of an electron (positive)

  • METALLIC CONDUCTOR

    In terms of current density, J:

    where:

    Therefore;

    EJ ee

    ee

    EJ

  • METALLIC CONDUCTOR

    Consider a uniform current density J and electric field intensity E in a cylindrical region of length L and cross-sectional area S.

  • METALLIC CONDUCTOR

    Therefore;

    or

    where:

    or

    but

    JSdSJIS

    ba

    a

    b

    a

    bab LEdLEdLEV

    baab LEV IRV

    ELV

    L

    VE

    S

    IJ S

    LR

    IS

    LV

  • METALLIC CONDUCTOR

    Insulator did not permit any electron flow due to an existing gap between the valence band and the conduction band. In this case the electron cannot accept any additional amounts of energy.

  • METALLIC CONDUCTOR

    Semiconductors had a small forbidden region that separates the valence band and the conduction band. A small amounts of energy in the form of heat, light, or an electric field may raise the energy of the electrons and provide a conduction.

  • Sample Problem 3

    Find the magnitude of the electric field intensity in a sample of silver having = 6.17 x 107 mho/m and e = 0.0056 m

    2/V.s if: (a) the drift velocity is 1 mm/s; (b) the current density is 107 A/m2; (c) the sample is a cube, 3 mm on a side, carrying a total current of 80 A; (d) the sample is a cube, 3 mm on a side, having a potential difference of 0.5 mV between opposite faces.

  • Sample Problem 4

    An aluminum conductor is 1000 ft long and

    has a circular cross section with a

    diameter of 0.8 in. If there is a dc voltage

    of 1.2 V between the ends, find: (a) the

    current density; (b) the current; (c) the

    power dissipated, using your vast

    knowledge of circuit theory.

  • Conductivity of Metallic Conductor

  • Seatwork

    1. Find the magnitude of the current density in a

    sample of silver for which = 6.17 x 107 S/m and e = 0.0056 m2/Vs if: (a) the drift velocity is 1.5 m/s; (b) the electric field intensity is 1 mV/m; (c) the sample is a cube 2.5 mm on a

    side having a voltage of 0.4 mV between

    opposite faces; (d) the sample is a cube 2.5 mm

    on a side carrying a total current of 0.5A.

    Answer: 16.53 kA/m2; 61.7 kA/m2; 9.87MA/m2;

    80.0 kA/m2

  • Seatwork

    2. A copper conductor has a diameter of 0.6 in and

    it is 1200 ft long. Assume that it carries a total dc

    current of 50 A. (a) Find the total resistance of

    the conductor. (b) What current density exists in

    it? (c) What is the dc voltage between the

    conductor ends? (d) How much power is

    dissipated in the wire?

    Answer: 0.0346; 2.74 x 105 A/m2; 1.729 V; 86.4 W

  • CONDUCTOR PROPERTIES AND

    BOUNDARY CONDITIONS

    Conductor Characteristics:

    1. It has a surface charge density that

    resides on the exterior surface and within

    has zero charge density.

    2. In static conditions, in which no current

    will flow, follows directly Ohms law: the electric field intensity within the conductor

    is zero.

  • CONDUCTOR PROPERTIES AND

    BOUNDARY CONDITIONS

    The principles applied to conductors in electrostatic fields:

    1. The static electric field intensity inside a conductor is zero.

    2. The static electric field intensity at the surface of a conductor is everywhere directed normal to the surface.

    3. The conductor surface is an equipotential surface.

  • CONDUCTOR PROPERTIES AND

    BOUNDARY CONDITIONS

    Prove:

    Consider a closed surface conductor in a

    free space boundary

    ( In static conditions, tangential

    electric field intensity and electric

    flux density are zero.)

    0 dLE

  • CONDUCTOR PROPERTIES AND

    BOUNDARY CONDITIONS

    For the tangential field around the small closed path at the surface:

    and E = 0,

    where: a to b = c to d = w and b to c = d to a = h

    0 a

    d

    d

    c

    c

    b

    b

    a

    02

    1

    2

    1,, hEhEwE ataNatbNt

  • CONDUCTOR PROPERTIES AND

    BOUNDARY CONDITIONS

    ( h = 0 and w 0(finite)) 0wEt0tE

    0 tt ED

  • CONDUCTOR PROPERTIES AND

    BOUNDARY CONDITIONS

    Consider the normal field in a small cylinder as the Gaussian surface;

    (Using Gauss Law)

    (Cylinder Sides)

    where: bottom and

    sides integral were equal to zero

    QdSDS

    Qsidesbottomtop

    SQSD SN

  • CONDUCTOR PROPERTIES AND

    BOUNDARY CONDITIONS

    or SND

    SNN ED 0

  • SAMPLE PROBLEM 5

    A potential field is given as V = 100e-5x sin

    3y cos 4z V. Let point P(0.1,/12,/24) be located at a conductor-free space

    boundary. At point P, find the magnitude

    of: (a) V; (b) E; (c) EN; (d) Et; (e) S

  • Methods of Images

    Dipole Characteristics infinite plane at zero potential that exists midway between the two charges.

    Consider a vanishingly thin conducting plane that is infinite in extent and have an equipotential surface at a potential V = 0, and electric field intensity normal to the surface.

  • Methods of Images

    This can be represented by a single charge (image) above the plane and maintain the same fields, removing the plane and locating a negative charge at a symmetrical location below the plane.

  • SAMPLE PROBLEM 6

    A point charge of 25 nC is located in free

    space at P(2,-3,5), and a perfectly

    conducting plane is at z = 0. Find: (a) V at

    (3,2,4); (b) E at (3,2,4); (c) S at (3,2,0).

  • Solution to Problem 6

    Given:

    z = 0

    V = 0 at z = 0 at (3,2,4)

    R = (3,2,4) (2,-3,5) = (1,5,-1) R = (3,2,4) (2,-3,-5) = (1,5,9)

    (a)

    (b)

  • Solution to Problem 6 (b)

    (c)

  • SEMICONDUCTORS

    Intrinsic Semiconductor pure material (i.e. germanium or silicon)

    Two types of current carriers:

    1. Electrons are those from the top of the filled valence band which have received sufficient energy (usually thermal) to cross the relatively small forbidden (1 electron volt energy gap) band into the conduction band.

  • SEMICONDUCTORS

    2. Holes are vacancies left by the electrons represent unfilled energy states in the valence band which may also move from atom to atom in the crystal.

    Both carriers move in an electric field, and they move in opposite directions; hence each contributes a component of the total current which is in the same direction as that provided by the other.

  • SEMICONDUCTORS

    The conductivity is a function of both hole and electron concentrations and mobilities,

    where:

    = conductivity

    e and h = electron and hole charge densities

    e and h = mobility of electrons and holes

    hhee

  • SEMICONDUCTORS

    or

    = e + h where: e = Neee h = Nheh Ne and Nh = electron and holes

    concentrations

    Electron charge, e = 1.602 x 10-19 C

    e = mobility of electron (0.12, silicon; 0.36, germanium)

    h = mobility of holes (0.025, silicon; 0.17, germanium )

  • SEMICONDUCTORS

    Doping the process of adding impurities to a pure semiconductor.

    Acceptors furnish extra holes and form p-type materials.

    Donor provide additional electrons and form n-type materials.

  • SAMPLE PROBLEM 7

    Using the values given in this section for

    the electron and hole mobilities in

    germanium at 300 K, and assuming hole

    and electron concentrations of 2.7 x 1019

    m-3, find: (a) the component of the

    conductivity due to holes; (b) the

    component of the conductivity due to

    electrons; (c) the conductivity.

  • Solution to Problem 7

    1 = Neeh = (2.7 x 1019)( 1.602 x 10-19)(0.17)

    = 0.735 mho/m

    2 = Neee = (2.7 x 1019)( 1.602 x 10-19)(0.36)

    = 1.557 mho/m

    = 1 + 2 = 0.735 + 1.557 = 2.29 mho/m

  • NATURE OF DIELECTRIC

    MATERIALS

    The characteristic which all dielectric materials have in common, whether they are solid, liquid, or gas, and whether or not they are crystalline in nature, is their ability to store electric energy.

    This storage takes place by means of a shift in the relative positions of the internal, bound positive and negative charges against the normal molecular and atomic forces.

  • NATURE OF DIELECTRIC

    MATERIALS

    A non-polar molecule does not have this dipole arrangement until after a field is applied. The negative and positive charges shift in opposite directions against their mutual attraction and produce a dipole which is aligned with the electric field.

  • NATURE OF DIELECTRIC

    MATERIALS

    Qdp

    n

    i

    itotal pp1

    n

    i

    ipP1

    0

    1lim

  • NATURE OF DIELECTRIC

    MATERIALS

    Consider a dielectric containing non-polar molecules, no dipole moment and P =0. In the interior, an incremental surface element , S and an electric field, E, produces a moment p = Qd in each molecule, such that p and d make an angle with S.

  • NATURE OF DIELECTRIC

    MATERIALS

    Net total charge that crosses the elemental surface in an upward direction,

    where: Qb = bound charge

    Bound charge polarization,

    Bound charge within the close surface,

    SnQdQb

    SPQb

    Sb dSPQ

  • NATURE OF DIELECTRIC

    MATERIALS

    Total enclosed charge,

    where:

    Q = total free charge enclosed by the surface S.

    Enclosed free charge,

    ST dSEQ 0

    QQQ bT

    SbT dSPEQQQ )( 0

    PED N 0

  • NATURE OF DIELECTRIC

    MATERIALS

    For Polarizable Material

    where Q = free charge enclosed

    In terms of volume charge densities

    Equivalent Divergence relationships,

    S dSDQ

    vTT

    vv

    vbb

    dvQ

    dvQ

    dvQ

    T

    b

    E

    P

    0

    vD

  • NATURE OF DIELECTRIC

    MATERIALS

    In ferroelectric materials the relationship between P and E is not only nonlinear, but

    also shows hysteresis effects.

    The linear relationship between P and E is

    where: e (chi) = a dimensionless quantity (electric susceptibility or dielectric

    constant)

    EP e 0

  • NATURE OF DIELECTRIC

    MATERIALS

    Substituting to the value of D:

    where:

    Therefore

    where: = permittivity

    EEED ee 000 )1(

    1 eR

    R 0

  • SAMPLE PROBLEM 8

    A certain homogenous slab of lossless

    dielectric material is characterized by an

    electric susceptibility of 0.12 and carries a

    uniform electric flux density within it of 1.6

    nC/m2. Find: (a) E; (b) P;(c) the average

    dipole moment if there are 2 x 1019 dipoles

    per cubic meter; (d) the voltage between

    two equipotentials 1 in. apart.

  • Solution to Problem 8

    Given:

    Xe = electric susceptibility = 0.12

    D = electric flux density = 1.6 nC/m2

    dipoles/cu.m = 2 x 1019

    a) D = 0E + Xe 0E = 0E(Xe + 1)

    E = D/ [0(Xe + 1)] = (1.6 x 10-9)/[(8.854 x 10-12)(0.12 +1)]

    = 161.35 V/m

    b) P = Xe 0E = (0.12)(8.854 x 10-12)(161.35)

    = 171.4 x 10-12 C/m2 or 171.4 pC/m2

    c) Average dipole moment = (171.4 x 10-12)/(2 x 1019)

    = 8.57 x 10-30 C-m

    d) V = ES = (161.35)(0.0254) = 4.09829 V or 4.10 V

  • BOUNDARY CONDITIONS FOR

    PERFECT DIELECTRIC MATERIALS

    Boundary conditions existing at the interface between a conductor and a

    dielectric:

    1. D and E are both zero inside the

    conductor.

    2. The tangential E and D field

    components must both be zero.

    0 tt ED

  • BOUNDARY CONDITIONS FOR

    PERFECT DIELECTRIC MATERIALS

    3. The normal electric flux density is equal

    to the surface charge density on the

    conductor.

    SNN ED

  • BOUNDARY CONDITIONS FOR

    PERFECT DIELECTRIC MATERIALS

  • BOUNDARY CONDITIONS FOR

    PERFECT DIELECTRIC MATERIALS

    Consider the interface between two dielectrics having permitivities 1 and 2 and occupying regions 1 and 2 and the tangential components are given by,

    0S dLE

    02tan1tan wEwE (around the close path)

    2tan1tan EE (h = negligible)

  • BOUNDARY CONDITIONS FOR

    PERFECT DIELECTRIC MATERIALS

    If the tangential electric field intensity is continuous across the boundary, then the

    tangential D is discontinuous, for

    or

    2

    2tan2tan1tan

    1

    1tan

    DEE

    D

    2

    1

    2tan

    1tan

    D

    D

  • BOUNDARY CONDITIONS FOR

    PERFECT DIELECTRIC MATERIALS

    Applying the Gausss law,

    QdSDS

    SQSDSD SNN 21

    SNN DD 21

  • BOUNDARY CONDITIONS FOR

    PERFECT DIELECTRIC MATERIALS

    (normal E is discontinuous)

    (S = 0, the normal component of D is

    continuous) or

    SNN DD 21

    21 NN DD

    2211 NN EE

  • SAMPLE PROBLEM 9

    The region y < 0 contains a dielectric

    material for which R1 = 2.5, while the region y > 0 is characterized by R2 = 4. Let E1 = -30ax + 50ay + 70az V/m, and

    find: (a) EN1; (b) Et1; (c)Et1; (d) E1; (e) 1

  • Solution to Problem 9

    Given:

    R1 = 2.5

    R2 = 4

    E1 = -30ax + 50ay + 70az V/m; y = normal

    a) EN1 = E1ay = (-30ax + 50ay + 70az) ay = 0 +

    50 + 0 = 50 V/m

    b) Et1 = E1 EN1 = -30ax + 50ay + 70az - 50ay = -30ax + 70az V/m

    c) Et1 = |Et1| =

  • Solution to Problem 9

    d) E1 = |E1| =

    e)

    1 = cos-1 (E1ay)/|E1| = 56.71

    O

  • SAMPLE PROBLEM 10

    Continue problem 9 by finding: (a) DN2; (b)

    Dt2; (c) D2; (d) P2; (e) 2

  • Solution to Problem 10

    E1 = -30ax + 50ay + 70az E2 = -30ax + Ey2ay + 70az D1 = 0R1E1 = (8.854 x 10-12)(2.5)(-30ax + 50ay + 70az) = - 0.664 x 10

    -

    9ax + 1.107 x 10-9ay + 1.55 x 10

    -9az D2 = Dx2ax + 1.107 x 10

    -9ay + Dz2az

    D2 = 0R2E2 Dx2ax + 1.107 x 10

    -9ay + Dz2az = (8.854 x 10-12)(4)( -30ax +

    Ey2ay + 70az)

    Dx2 = -1.062 x 10-9

    Ey2 = 31.26

    Dz2 = 2.48 x 10-9

    D2 = -1.062 x 10-9ax + 1.107 x 10-9ay + 2.48 x 10

    -9az D2 = -1.062ax + 1.107ay + 2.48az nC/m

    2

  • Solution to Problem 10

    a) DN2 = D2ay = (-1.062ax + 1.107ay + 2.48az) ay = 0 + 1.107 + 0 = 1.107 nC/m2

    b) Dt2 = Et20R2 = (76.2)(8.854 x 10-12)(4) = 2.70 x 10-9

    C/m2 = 270 nC/m2

    c) D2 = -1.062ax + 1.107ay + 2.48az nC/m2

    d)

    P2 = -0.797ax + 0.830ay + 1.86az C/m2

    e) ;

  • CAPACITANCE

    Capacitance the ratio of the magnitudes of the total charge on either conductor to

    the potential difference between

    conductors. And it is measured in farads

    (F), where a farad = 1 Coulomb/Volt

    where: Q = surface integral over the

    positive conductor.

    0V

    QC

  • CAPACITANCE

  • CAPACITANCE

    Consider two conductors embedded in a homogenous dielectric. Conductor M2

    carries a total positive charge Q, and M1

    carries an equal negative charge. There

    are no other charges present, and the total

    charge of the system is zero.

  • CAPACITANCE

    Let Vo, the potential difference between M2 and M1, and carrying a unit charge

    from the negative to the positive surface,

    and the capacitance is given by,

    dLE

    dSEC S

  • CAPACITANCE

  • CAPACITANCE

    Consider a simple two-conductor system in which the conductors are identical,

    infinite parallel planes with separation d.

    Choosing the lower conducting plane at z

    = 0 and the upper one at z = d, a uniform

    sheet of surface charge S on each conductor leads to the uniform field.

  • CAPACITANCE

    ( = permittivity of the homogenous dielectric)

    (charge on the lower plane)

    (charge on the upper plane)

    Potential difference between the lower and upper plane,

    zS aE

    zSaD

    SZN DD

    ZN DD

    ddzdLEV Sd

    Slower

    upper

    0

    0

  • CAPACITANCE

    where:

    S = surface charge density

    S = surface area

    or

    The total energy stored in the capacitor,

    Therefore,

    And the charge value,

    SQ S

    d

    S

    V

    QC

    0

    2

    222

    0 0 2

    22

    2

    1

    2

    1

    2

    1

    2

    1

    d

    d

    SSddSdzdvEW

    SSS d S

    volE

    C

    QQVCVWE

    2

    0

    2

    02

    1

    2

    1

    2

    1

  • SAMPLE PROBLEM 11

    Find the relative permittivity of the

    dielectric material used in a parallel plate

    capacitor if : (a) C = 40 nF, d = 0.1 mm,

    and S = 0.15 m2, (b) d = 0.2 mm, E = 500

    kV/m, and S = 10 C/m2; (c) D = 50 C/m2 and the energy density is 20 J/m3.

  • Solution to Problem 11 (a)

    (b)

  • Solution to Problem 11 (c)

    Given:

    D = 50 x 10-6 C/m2

    W = 20 J/m3

  • SEVERAL CAPACITANCE

    Consider a Coaxial cable or coaxial capacitor that has inner radius a, outer

    radius b, and length L. The value of the

    capacitance is given by,

    )/ln(

    2

    ab

    LC

  • SEVERAL CAPACITANCE

    Consider a spherical capacitor formed of two concentric spherical conducting shells of radius a and b, b > a. The expression for the electric field,

    ( = dielectric permittivity

    between the region of the

    spheres)

    24 r

    QEr

  • SEVERAL CAPACITANCE

    Potential difference using the line integral,

    (Q =represents the total charge o the inner sphere)

    ba

    QVab

    11

    4

  • SEVERAL CAPACITANCE

    The Capacitance is given by,

    or

    (allowing the outer sphere to become infinitely large, b = .)

    ba

    V

    QC

    ab11

    4

    aC 4

  • SEVERAL CAPACITANCE

    Coating the sphere with a different dielectric layer, for which = 1, extending from r = a to r = r1,

    )(4

    )(4

    4

    12

    0

    12

    1

    2

    rrr

    QE

    rrar

    QE

    r

    QD

    r

    r

    r

  • SEVERAL CAPACITANCE

    The potential difference is,

    1011

    2

    0

    2

    1

    1111

    4

    44

    1

    1

    rra

    QVV

    r

    Qdr

    r

    QdrVV

    a

    ra

    ra

  • SEVERAL CAPACITANCE

    Therefore,

    1011

    1111

    4

    rra

    C

  • SEVERAL CAPACITANCE

    Consider a parallel-plate capacitor of area S and spacing d, where d is small

    compared to the linear dimensions of the

    plate. The capacitance is given by 1S/d, using a dielectric permittivity 1. Suppose another part of the capacitor dielectric has

    a permittivity of 2, then the potential difference given by Vo is,

  • SEVERAL CAPACITANCE

    (E1 and E2 are

    both uniform)

    (E is normal)

    or

    22110 dEdEV

    21 NN DD

    2211 EE

  • SEVERAL CAPACITANCE

    Eliminating E2;

    The surface charge density,

    Since D1 = D2, the capacitance is given by,

    21210

    1/dd

    VE

    2

    2

    1

    1

    01111

    dd

    VEDS

    212

    2

    1

    110011

    11

    CCS

    d

    S

    dV

    S

    V

    QC S

  • SAMPLE PROBLEM 12

    Find the capacitance of: (a) 20 cm of 58C/U coaxial cable having an inner conductor 0.0295 in. in diameter, an outer conductor having an inside diameter of 0.116 in., and a polyethylene dielectric; (b) a conducting sphere 1 cm in diameter, covered with a layer of polyethelene 1 cm thick, in free space; (c) a conducting sphere 1 cm in diameter, covered with a layer of polyethelene 1 cm thick, and surrounded by a concentric conducting sphere 1.5 cm in radius.

  • Solution to Problem 12

    a)

    b)

    c)

  • Solution to Problem 12

    b)

  • SAMPLE PROBLEM 13

    A parallel-plate capacitor contains three

    dielectric layers, Let R1 = 1, d1 = 0.2 mm, R2 = 2, d2 = 0.3 mm, R3 = 3, d3 = 0.4 mm, and S = 20 cm2. (a) Find C. (b) Find the

    percentage of the total stored energy

    located in each of the three regions.

  • Solution to Problem 13

    a)

    b)

  • CAPACITANCE OF A TWO-WIRE

    LINE

  • CAPACITANCE OF A TWO-WIRE

    LINE

    Consider the potential field of two infinite line charges. A positive line charge in the

    xz plane at x = a and a negative line

    charge at x = -a. The potential of a single

    line charge with zero reference at a radius

    of Ro is,

    R

    RV L 0ln

    2

  • CAPACITANCE OF A TWO-WIRE

    LINE

    Combining the potential field,

    Letting R10 = R20 (placing zero reference at equal distance from each line) and R1 = x and R2 =y,

    120

    210

    2

    20

    1

    10 ln2

    lnln2 RR

    RR

    R

    R

    R

    RV LL

    22

    22

    22

    22

    ln4

    ln2 yax

    yax

    yax

    yaxV LL

  • CAPACITANCE OF A TWO-WIRE

    LINE

    Choosing an equipotential surface V = V1 and letting K1 = dimensionless parameter of potential V1

    LVeK /4

    11

  • CAPACITANCE OF A TWO-WIRE

    LINE

    Therefore, 22

    22

    1yax

    yaxK

    2

    1

    12

    2

    1

    1

    1

    2

    1

    1

    K

    Kay

    K

    Kax

    01

    12 22

    1

    12

    ay

    K

    Kaxx

  • CAPACITANCE OF A TWO-WIRE

    LINE

    In equipotential surface where V = V1, the surface is independent value of z ( a cylinder) and intersects the xy plane in a circle of radius b,

    Centered at x = h, y = 0;

    where: ( x = 0)

    1

    2

    1

    1

    K

    Kab

    1

    1

    1

    1

    K

    Kah

    22 bha

    b

    bhhK

    22

    1

  • CAPACITANCE OF A TWO-WIRE

    LINE

    But

    Therefore,

    The value of the capacitance is given by,

    or

    LVeK /2

    10

    1

    0

    ln

    4

    K

    VL

    110 ln

    2

    ln

    4

    K

    L

    K

    L

    V

    LC L

    )/(cosh2

    /ln

    2122 bh

    L

    bbhh

    LC

  • SAMPLE PROBLEM 14

    Find the capacitance between a circular

    conducting cylinder in air, 2 mm in radius,

    and: (a) a conducting plane, 1 cm distant

    from the cylinder axis; (b) a conducting

    plane, 1 cm distant from the cylinder axis;

    (c) a similar cylinder, axes separated by 1

    cm.

  • Solution to Problem 14

    a)

    b)

    c)

    L = 1

    = 0 = 8.854 x 10-12

    r = b = 2mm = 2 x 10-3 m

    d = h = 0.01 m

  • Solution to Problem 14

    0.024 = 1cm + 1cm + 2mm + 2mm