COMPLEMENTARY MOSFET · 2019. 5. 5. · 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s)...

HMC4622

1 / 10©GUANGDONGHOTTECH INDUSTRIALCO.,LTD E-mail:[email protected]

FEATURES VDS=20V,ID=7.3A,RDS(ON)≤23mΩ@VGS=10V VDS=-20V,ID=-5A,RDS(ON)≤53mΩ@VGS=-4.5V Low gate charge and Ultra low on-resistance For low Input Voltage inverter applications Surface Mount device SOP-8MECHANICAL DATA Case: SOP-8 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.3 grams (approximate)MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)Parameter Symbol Min Typ Max Unit Conditions

Drain-Source breakdown voltage V(BR)DSS* 20 V VGS=0V, ID=250μAZero gate voltage drain current IDSS* 1 μA VDS=16V, VGS=0VGate-body leakage current IGSS* ±100 nA VDS=0V, VGS=±16VGate-threshold voltage VGS(th)* 0.6 1.25 2 V VDS=VGS, ID=250μAOn-State Drain Current ID(ON) 35 A VDS=5V, VGS=4.5V

Drain-source on-resistance RDS(ON)*19 23 mΩ VGS=10V, ID=7.3A28 33.6 mΩ VGS=10V, ID=7.3A,TJ = 125°C24 30 mΩ VGS=4.5V, ID=6.4A67 84 mΩ VGS=2.5V, ID=2A

Forward transconductance gFS 17 S VDS=5V, ID=7.3ADiode forward voltage VSD 0.7 1 V IS=1A, VGS=0VDiode forward current IS 3 AInput capacitance Ciss 900 1100 pF

VDS=10V, VGS=0V, f=1MHzOutput capacitance Coss 162 pFReverse transfer capacitance Crss 105 pFGate resistance Rg 0.9 1.35 Ω VDS=0V, VGS=0V, f=1MHzTotal gate charge Qg 7.2 9 nC VGS=4.5V,VDS=10V,ID=6.5ATotal gate charge 15 18 nC

VGS=10V,VDS=10V,ID=6.5AGate-source charge Qgs 1.8 nCGate-drain charge Qgd 2.8 nCTurn-on delay time td(on) 4.5 nS

VGS=10V, VDS=10V,RGEN=3Ω,RL=1.4Ω

Turn-on rise time tr 9.2 nSTurn-off delay time td(off) 18.7 nSTurn-off fall time tf 3.3 nSBody Diode Reverse Recovery Time trr 18 nS IF=7.3A, dI/dt=100A/μsBody Diode Reverse Recovery Charge Qrr 9.5 nC IF=7.3A, dI/dt=100A/μs

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

Parameter Symbol Max N-channel Max P-channel UnitDrain-source voltage VDS 20 -30 VGate-source voltage VGS ±16 ±12 VContinuous drain current TA = 25°C ID 7.3 -5 ATA = 70°C 6.2 -4.2 APulsed drain current IDM 35 -25 AAvalanche current IAS,IAR 13 13 AAvalanche energy L=0.1mH EAS,EAR 25 25 mJPower dissipation TA = 25°C PD 2 2 WTA = 70°C 1.44 1.44 WThermal resistance from Junction to ambient RθJA 110 °C/WThermal resistance from Junction to Lead RθJL 40 °C/WJunction temperature TJ 150 °CStorage temperature TSTG -55 ~+150 °C

COMPLEMENTARY MOSFET

mailto:[email protected]


N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERI STICS

1.4

494 593692 830

19318

59142

0

5

10

15

20

25

30

1 2 3 4 5VGS(Volts)

Figure 2: Transfer Characteristics

I D(A

)

0

10

20

30

40

50

60

70

80

90

100

0 5 10 15 20 25 30

ID (A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

RD

S(O

N) (

mΩΩ ΩΩ

)

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD (Volts)Figure 6: Body-Diode Characteristics

I S (

A)

25°C

125°C

-40°C

0.60

0.80

1.00

1.20

1.40

1.60

-50 -25 0 25 50 75 100 125 150 175

Temperature (°C)Figure 4: On-Resistance vs. Junction

Temperature

Nor

mal

ized

On-

Res

ista

nce

VGS=10V, 7.3A

VGS=4.5V, 6.4A

VGS=2.5V, 5.5A

10

15

20

25

30

35

40

3 4 5 6 7 8 9 10

VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

RD

S(O

N) (

mΩΩ ΩΩ

)

25°C

125°CVDS=5V

VGS=10V

ID=7.3A

25°C

125°C

0

10

20

30

40

50

60

0 1 2 3 4 5

VDS (Volts)Figure 1: On-Region Characteristics

I D (

A)

VGS=3V

4.5V10V 6V

3.5V

VGS=4.5V

-40°C

VGS=2.5V


HMC4622



N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERI STICS

1.4

494 593692 830

19318

0

2

4

6

8

10

0 3 6 9 12 15Qg (nC)Figure 7: Gate-Charge Characteristics

VG

S (

Vol

ts)

0

200

400

600

800

1000

1200

1400

0 5 10 15 20VDS (Volts)Figure 8: Capacitance Characteristics

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VDS=10VID=7.3A

0

10

20

30

40

50

0.0001 0.001 0.01 0.1 1 10 100Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)

Pow

er (

W)

TJ(Max)=150°CTA=25°C

0.0

0.1

1.0

10.0

100.0

0.1 1 10 100VDS (Volts)

I D (

Am

ps)

Figure 9: Maximum Forward Biased SafeOperating Area (Note E)

10µs

1ms

0.1s

DC

RDS(ON)limited


100µ

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Imp edance

Zθθ θθJ

A N

orm

aliz

ed T

rans

ient

The

rmal

Res

ista

nce

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJARθJA=62.5°C/W

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

10s

10ms


HMC4622



-

+VDC

Ig

Vds

DUT

-

+VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

Ig

Vgs

-

+VD C

DUT

L

Vgs

Vds

IsdIsd

Diode Recovery Test C ircuit & W aveforms

Vds -

Vds +

I FdI/dt

I RM

rr

VddVdd

Q = - Idt

t rr

-

+VD C

DUT VddVgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test C ircuit & W aveform s

t t rd(on)

ton

td(o ff) t f

toff


HMC4622



P-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)Parameter Symbol Min Typ Max Unit Conditions

Drain-Source breakdown voltage V(BR)DSS* -20 V VGS=0V, ID=-250μAZero gate voltage drain current IDSS* -1 μA VDS=-16V, VGS=0VGate-body leakage current IGSS* ±100 nA VDS=0V, VGS=±12VGate-threshold voltage VGS(th)* -1.3 -0.9 -0.5 V VDS=VGS, ID=-250μAOn-State Drain Current ID(ON)* -25 A VDS=-5V, VGS=-4.5V

Drain-source on-resistance RDS(ON)*44 53 mΩ VGS=-4.5V, ID=-5A59 71 mΩ VGS=-4.5V,ID=-5A, TJ=125°C67 87 mΩ VGS=-2.5V, ID=-4.2A

Forward transconductance gFS 13 S VDS=-5V, ID=-5ADiode forward voltage VSD -0.76 -1 V IS=-1A, VGS=0VDiode forward current IS -2.5 AInput capacitance Ciss 800 960 pF

VDS=-10V, VGS=0V, f=1MHzOutput capacitance Coss 131 pFReverse transfer capacitance Crss 103 pFGate resistance Rg 6.7 10 Ω VDS=0V, VGS=0V, f=1MHzTotal gate charge Qg 7.4 nC VGS=-4.5V,VDS=-4.5V,ID=-4.5ATotal gate charge 15.5 nC

VGS=-4.5V,VDS=-10V,ID=-4.5AGate-source charge Qgs 1.3 nCGate-drain charge Qgd 2.9 nCTurn-on delay time td(on) 4.4 nS

VGS=-4.5V, VDS=-10V,RGEN=3Ω,RL=2Ω

Turn-on rise time tr 7.6 nSTurn-off delay time td(off) 44 nSTurn-off fall time tf 13.5 nSBody Diode Reverse Recovery Time trr 20 nS IF=-5A, dI/dt=100A/μsBody Diode Reverse Recovery Charge Qrr 9 nC IF=-5A, dI/dt=100A/μs

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .


HMC4622



TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-C HANNEL

0

5

10

15

20

25

0 1 2 3 4 5

-VDS (Volts)Fig 1: On-Region Characteristics

-ID (

A)

VGS=-2.5V

-6V

-3.5V

-4.5V

-10V

0

5

10

15

20

0.5 1.0 1.5 2.0 2.5 3.0

-VGS(Volts)Figure 2: Transfer Characteristics

-ID(A

)

30

40

50

60

70

80

0 5 10 15 20 25

-ID (A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

RD

S(O

N) (

mΩΩ ΩΩ

)

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.2 0.4 0.6 0.8 1.0

-VSD (Volts)Figure 6: Body-Diode Characteristics

-IS (

A)

25°C

125°C

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

Temperature (°C)Figure 4: On-Resistance vs. Junction

Temperature

Nor

mal

ized

On-

Res

ista

nce

VGS=-4.5V

VGS=-2.5V

20

40

60

80

0 2 4 6 8 10

-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

RD

S(O

N) (

mΩΩ ΩΩ

)

25°C

125°C

VDS=-5V

VGS=-2.5V

VGS=-4.5V

ID=-5A

25°C

125°C

ID=-5A

-40°C

ID=-4.2A

-40°C


HMC4622



TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-C HANNEL

0

2

4

6

8

10

0 4 8 12 16

-Qg (nC)Figure 7: Gate-Charge Characteristics

-VG

S (

Vol

ts)

0

250

500

750

1000

1250

0 5 10 15 20

-VDS (Volts)Figure 8: Capacitance Characteristics

Cap

acita

nce

(pF

)

Ciss

0

10

20

30

40

50

60

0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Pow

er (

W)

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Imp edance

Zθθ θθJ

A N

orm

aliz

ed T

rans

ient

The

rmal

Res

ista

nce

Coss

Crss

VDS=-10VID=-5A

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJARθJA=62.5°C/W

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse


0

0

1

10

100

0.1 1 10 100VDS (Volts)

I D (

Am

ps)

Figure 9: Maximum Forward Biased SafeOperating Area (Note E)

10µs1ms

0.1s

DC

RDS(ON)limited


100µ

10s

10ms

1s


HMC4622



VDC

Ig

Vds

DUT

VDC

Vgs

Vgs

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+-

+

-10V

Ig

Vgs

-

+VDC

DUT

L

Vgs

Isd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

dI/dt

RM

rr

VddVdd

Q = - Idt

t rr-Isd

-Vds

F-I

-I

VDCDUT VddVgs

Vds

Vgs

RL

Rg

Resistive Switching Test Circuit & Waveforms

-

+

Vgs

Vds

t t

t

t t

t

90%

10%

r

on

d(off) f

off

d(on)


HMC4622



SOP-8 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In InchesMin. Max. Min. Max.

A 1.350 1.750 0.053 0.069A1 0.100 0.250 0.004 0.010A2 1.350 1.550 0.053 0.061b 0.330 0.510 0.013 0.020c 0.170 0.250 0.007 0.010D 4.800 5.000 0.189 0.197e 1.270(BSC) 0.050（BSC）E 5.800 6.200 0.228 0.244E1 3.800 4.000 0.150 0.157L 0.400 1.270 0.016 0.050θ 0° 8° 0° 8°

SOP-8 Suggested Pad Layout

Note:1.Controlling dimension: in millimeters

2.General tolerance: ±0.05mm

3.The pad layout is for reference purposes only


HMC4622



SOP-8 Tape and Reel

SOP-8 Embossed Carrier Tape

SOP-8 Tape Leader and Trailer

SOP-8 Reel

DIMENSIONS ARE IN MILLIMETER

TYPE A B C d E F P0 P P1 W

SOP-8 6.40 5.40 2.10 Ø1.50 1.75 5.50 4.00 8.00 2.00 12.00

TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1

DIMENSIONS ARE IN MILLIMETER

REEL OPTION D D1 D2 G H I W1 W2

13’’ DIA Ø330.00 100.00 13.00 R151.00 R56.00 R6.50 12.40 17.60

TOLERANCE ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1


HMC4622


N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C P-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C *Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.SOP-8 Package Outline Dimensions SOP-8 Tape and ReelSOP-8 Embossed Carrier Tape SOP-8 Tape Leader and Trailer SOP-8 Reel

COMPLEMENTARY MOSFET · 2019. 5. 5. · 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s)...

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Transcript of COMPLEMENTARY MOSFET · 2019. 5. 5. · 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s)...