Combination of Scanning Probe Microscope and X … of Scanning Probe Microscope and X-rays for...
Transcript of Combination of Scanning Probe Microscope and X … of Scanning Probe Microscope and X-rays for...
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Combination of Scanning Probe Microscope
and X-rays for Detection of Electrons
DHEZ Olivier†, COMIN Fabio‡, FELICI Roberto†, CHEVRIER Joël*, RODRIGUES Mario‡,*
†OGG-INFM, Grenoble, France, ‡ESRF, Grenoble, France, *UJF/CNRS, Grenoble, France.
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
FP6-STREPESRFEuropean Synchrotron Radiation Facility, Grenoble, EUDr. Fabio Comin (coordinator)
GPEC/CNRS Université de la MéditerranéeUMR 6631 CNRS, Marseille, FranceDr. Daniel Pailharey
LEPES/CNRSLaboratoire d'Etudes des Propriétés Electroniques des SolidesCNRS, Grenoble, FranceProf. Joël Chevrier
ISSPInstitute of Solid State Physics, University of Latvia, Riga, LatviaDr.Hab. Juris Purans
UNITNDepartment of Physics, University of Trento, ItalyProf. Giuseppe Dalba
UNITAInstitute of Physical Chemistry and Institute of PhysicsUniversity of Tartu, EstoniaDr. Väino Sammelselg
OGG/INFM/CNRIstituto Nazionale per la Fisica della Materia, Grenoble, ItalyDr. Roberto Felici
IFN-CNRInstitute for Photonics and Nano-technologies, Section "ITC-Cefsa”Trento, ItalyDr. Francesco Rocca.
Project:NMP4-CT-2003-505634
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Scientific Cases
Topological information
Chemical informationElectronic information
X-rays needed
Nano system
Force interactionNano-manipulation
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Tip surface distance control
b. Perpendicular• Good capacitive coupling• Possibility to do EFM• As well as SCM
Tuning Forks:Piezo-electricQ Higher than 10 000 without any tipAllow very small amplitudes < 1nmNo laser
A tip must be glued
a. Parallel• Weak capacitive coupling• Possibility to do SCM• No possibility of EFM
Distance regulation: frequency shift - PLL regulation+PID
4mm
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Microscope
XYZ direction coarse approachAttocube Systems
(Travel:4mm, Res: 25nm)
XYZ direction fine movement(Travel:9µm, Res: 0.02nm)
Tuning Forks system
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Metallic Tips
NaOH chemical etchedCurvature radius: 10-100nm
50 nm
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Experiment IGoal:Photoelectron detection.Detection chain validation.Simulation - experience comparison
Method:Faraday cup design.Lock-in detection.
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Photo-Electron Yield simulation
-Monte Carlo codes: EGS4 and PenelopeLimitation: do not follow the slow electrons EGS4 >1keVPenelope >100eV. Gold on Copper
Flux: 108 ph/s 800
850
900
950
1000
1050
1100
1150
13 13.5 14 14.5 15
Cur
rent
(fA)
Energy (keV)
~200 fA
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Gold layer on Copper - L
600
650
700
750
800
850
900
13.6 13.65 13.7 13.75 13.8 13.85 13.9
Me
asu
red
cu
rre
nt
(fA
)
Incident energy (keV)
2 Au Edge
~180 fA
I0=~108 ph/s
Experiment ResultsExperiment parameters:
Monochromatic Beam (1x3 µm)BM05 - I0=108 ph/s - E=13.7 keV (L2 edge of Au)
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Experiment II
PLL controller+ frequency detector
PIController
Lock-inamplifier
X-rays
Beam Chopper
Excitation
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Tip Alignment
Si
Ge
W
Ge Kβ: 9.88 keV W Lα: 8.39 keV 0
5e-06
1e-05
1.5e-05
2e-05
2.5e-05
3e-05
3.5e-05
4e-05
-4 -2 0 2 4 0
20
40
60
80
100
120
140
160R
(A
)
Ph
ase
(D
eg
ree
)
displacement (µm)
Lockin RLockin Phase
➀
➁
➀
➁Vertical displacement (µm)
0
200
400
600
800
1000
1200
1400
1600
0 50 100 150 200 250 300
Flu
ore
sce
nce
(A
.U.)
Ge KW L
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Experiment ParametersSetup:ID22 Beamline ESRFFocusing device: Kirk-Patrick Baez.
Beam characteristic:Monochromatic Beam Size: 2x3 µm2
Incidence angle: ~5ºI0=6.1011 ph/sE=11.1 keV (K edge of Ge)Sample-Tip distance: ~10nm
Ge dots on Si
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Simulation
-5
0
5
10
15
20
25
30
35
10.6 11 11.4 11.8 12.2 12.6
Cu
rre
nt
(pA
)
Energy (keV)
Code: EGS4Ge Dot on Si waferGe dots
Si wafer
X-Ray Beam
Ge dot R=36nmSi layer l=10µm
Flux: 1012 ph/s
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
-150
-100
-50
0
50
100
150
11.08 11.1 11.12 11.14 11.16 11.18 11.2 11.22
Phase (
Degre
)
Energy (keV)
XANES
AFM (sample/tip) regulation:10 nm during the measure
Noise Level: few fA
Simulation with EGS4 for Ge dots on Si: Ijump=28pA
80
100
120
140
160
180
200
220
11.08 11.1 11.12 11.14 11.16 11.18 11.2 11.22
Tip
Curr
ent
(pA)
30 pA
0
0.5
1
1.5
2
2.5
3
3.5
11.08 11.1 11.12 11.14 11.16 11.18 11.2 11.22
Ge F
luore
scence s
ignal (a
.u.)
Energy (keV)
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Conclusion
A home built microscope compatible with X-rays synchrotron instrumentation.
AFM-STM Imaging Capabilities
We shows sensitivity to photo-excited electrons.
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Coaxial Tips Why ?
I
ConductiveTip
Conductive
Layer
insulator
Sample
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Coaxial Tips development
Tungsten Wire (250µm),Chemical Etched.
Parylene film (~1000Å)
Gold layer (~1000Å)
End opening (FIB)
X-Tip Workshop Nov 17, 2005 - ESRF, Grenoble
Other development
Implementation on beamline• Imaging capability.➙ Resolution: 50 nm.
Noise problem:- Mechanical noise (Pump, ...)- Electronic Noise.
Collaboration with ID1