Coherent Phonons and Coherent Control in Semiconductors

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Coherent Phonons and Coherent Control in Semiconductors Harvard University M. Kandyla, C.A.D. Roeser, A.M.-T. Kim and Eric Mazur Department of Physics and Division of Engineering and Applied Sciences

Transcript of Coherent Phonons and Coherent Control in Semiconductors

Page 1: Coherent Phonons and Coherent Control in Semiconductors

Coherent Phonons and Coherent Controlin Semiconductors

Harvard University

M. Kandyla, C.A.D. Roeser, A.M.-T. Kim and Eric Mazur Department of Physics and Division of Engineering and Applied Sciences

Page 2: Coherent Phonons and Coherent Control in Semiconductors

Outline

1. Displacive Excitation of Coherent Phonons

2. Experimental Results

3. Coherent Control

Page 3: Coherent Phonons and Coherent Control in Semiconductors

Motivation

Zeiger at al., Phys. Rev. B 45, 768 (1992).

Only one phonon mode excited in certain materials such as Te, Sb, Ti2O3, Bi.

Page 4: Coherent Phonons and Coherent Control in Semiconductors

+

Equilibrium position

+ +

Laser excites an electron

++ +

+

Ions oscillate around the new position before relaxing

+

New equilibrium separation is established for the ions

+ ++

+ ++ +

Displacive Excitation of Coherent Phonons (DECP)

+

Page 5: Coherent Phonons and Coherent Control in Semiconductors

DECP in Te

DECP does not impose any symmetry breaking direction onto the crystal.

Only phonon modes which fully preserve the symmetry of the crystal are excited via DECP.

Te possesses a a fully symmetric phonon mode, the A1 mode.

c-axis

A1 phonon modea

x

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Experimental Setup

M

BS

White-light pump-probe setup

CCD spectrometer

sample

reference

PM

MM

probe

femtosecondlaser source

pump

L

L

CaF2

L

PM

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Experimental Setup

R p

pumpθ

Pump-probe details

pump pulse:1.5 eV (800 nm)up to 250 mJ

probe pulse:1.7 - 3.5 eV (350nm-750nm)< 0.1 mJ

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Past Results

Time-resolved reflectivity measurements have been performed and from them the dielectric constant of Te has been calculated using the Fresnel formulae:

rp =− −

+ −

ε θ ε θ

ε θ ε θ

ord ord

ord ord

cos sin

cos sin

2

2

rp =− −

+ −

ε ε θ ε θ

ε ε θ ε θ

ord ext ord

ord ext ord

cos sin

cos sin

2

2

E field

c-axis

c-axis E field

Page 9: Coherent Phonons and Coherent Control in Semiconductors

Past Results

Page 10: Coherent Phonons and Coherent Control in Semiconductors

Past Results

0

1.52.0

2.53.0

3.5

−5000

5001000

15002000

−10

203040

10

photon energy (eV)

time delay (fs)

Re[ε(ω)]

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Current ResearchDouble-pump experiments on Te: control of coherent phonons.

It has been demonstrated in Bi

Hase et al., Appl. Phys. Lett. 69, 2474 (1996)

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Why Is Phonon Cancellation Interesting?

The motion of the ions according to the A1 mode results in a variation of the radius of the helices, x.

a

c-axis

A1 phonon mode

x

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Why Is Phonon Cancellation Interesting?Theoretical studies predict that when x changes sufficiently (x=0.286a) the 0.3 eV indirect gap of Te closes:

P. Tangney, Master's thesis, University College Cork, Ireland (1998)

A H K ΓΓ

ener

gy (e

V)

Te12

0.3 eV

10

8

6

EF

A H K ΓΓ

ener

gy (e

V)

Te12

10

8

6

EF

equilibriumx = 0.2686a x = 0.31a

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Why Is Phonon Cancellation Interesting?

The experimental data presented before also indicate closing of the 0.3 eV indirect gap:

−0.5 0.0 0.5 1.0 1.5 2.0

zero

-cro

ssin

g of

Re[

ε] (e

V)

2.6

2.4

2.2

2.0

time delay (ps)

band gap of Te

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Bandgap Closes

−0.5 0.0 0.5 1.0 1.5 2.0

zero

-cro

ssin

g of

Re[

ε] (e

V)

2.6

2.4

2.2

2.0

time delay (ps)

band gap of Te

In the oscillator model of the dielectric function the zero crossing frequency indicates the bonding-antibonding splitting.

energy (eV)di

elec

tric

func

tion

0 2 4 6 8

30

20

10

0

−10

ωg = 4 eV

Re[ε]

Im[ε]

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Oscillator Model

mx m x m x eE ej j j j j= − − − −iωtω 20Γ

Electrons are tied to ions like classical oscillators.

Solving for x(t) = x0e-iwt we can find:

P t f N ex tj j j( ) = − ( )[ ] E ej−iωtε χ0 0=

and from here the dielectric function:

ε(ω) = 1+Σχj

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Oscillator ModelIn a system modeled with one oscillator:

From microscopic theory of dielectric function we know that the peak of its imaginary part approximately gives the average splitting between bonding and antibonding states of the material.

ε ωε ω ω ω

( )= +

− −

1 12

02 2

Nem ig Γ

energy (eV)

diel

ectri

c fu

nctio

n

0 2 4 6 8

30

20

10

0

−10

ωg = 4 eV

Re[ε]

Im[ε]

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Te

−0.5 0.0 0.5 1.0 1.5 2.0

zero

-cro

ssin

g of

Re[

ε] (e

V)

2.6

2.4

2.2

2.0

time delay (ps)

band gap of Te

The bands seem to cross for approximately 100 fs.

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Phonon Cancellation

Cancelling the phonons will enable us to study carrier scattering events.

CB

VB

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Current Results

-1 0 1 2 30.9

1

1.1

1.2

1.3

Norm

alize

d Re

flecti

vity

-1 0 1 2 30.9

1

1.1

1.2

1.3

time delay (ps)

Norm

alize

d Re

flecti

vity

single pump

double pump

2 eV

2 eV

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Conclusions

A1 phonons can be excited coherently in certain class of materials via DECP

Our technique enables us to observe time-resolved dynamics in a broad frequency range

Te exhibits a band crossing transition

Double pump experiments will investigate the material behaviour in the crossed bands state

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Acknowledgements

Thanks to the Mazur group

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TeTe has 3 atoms and 18 valence electrons in the unit cell. The structure consists of infinite helices with three atoms per turn parallel to the c(z) axis. Each atom has 2 nearest neighbours displaced +-1/3c from it and rotated from it +-120 degrees about the c axis and 4 second nearest neighbours in adjacent helices.

x is the radius of the helices. Equilibrium value (experimental) x=0.2686 interhelical distance. A1 mode only varies x.x is not determined by lattice symmetry but by electron distribution. Excited electrons are placed in the center of the helices pushing the helices apart.

As x increases the band gap decreases. Indirect band gap=0.3 eV at equilibrium. Indirect crossing at x=0.286. direct crossing at x>1/3.

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Te

A

H

K

Γ

Brillouin zone of Te

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Te

A1

A2

E'LO

+−E'TO

+

−−E''TO

E''LO

Raman3.6 THz

infra-red2.6 THz

Raman/infra-red3.09 THz

Raman/infra-red4.26 THz

Raman/infra-red2.76 THz

Raman/infra-red4.22 THz

Other optical phonon modes in Te