Cleaning methods of porous surface and semiconductor surface

United States Patent [19] Fujiyama et al.

US006058945A

[11] Patent Number: 6,058,945 [45] Date of Patent: May 9, 2000

[54] CLEANING METHODS OF POROUS SURFACE AND SEMICONDUCTOR SURFACE

[75] Inventors: Yasutomo Fujiyama, Atsugi; Hideya Kumomi, Yokohama, both of Japan

[73] Assignee: Canon Kabushiki Kaisha, Tokyo, Japan

[21] Appl. No.: 08/922,454

[22] Filed: Sep. 3, 1997

Related US. Application Data

[63] Continuation-in-part of application No. 08/864,731, May 28, 1997, abandoned.

[30] Foreign Application Priority Data

May 28, 1996 [JP] Japan .................................. .. 8-157632 Jun. 5, 1996 [JP] Japan .. 8-142836 Jun. 5, 1996 [JP] Japan .................................. .. 8-142837

[51] Int. Cl.7 ...................................................... .. B08R 7/00

[52] US. Cl. ................................ .. 134/1.3; 134/1; 134/26; 134/86; 134/902; 134/28

[58] Field of Search ............................... .. 134/1, 1.3, 902,

134/86, 2, 3, 26, 28,29, 32, 33, 34, 22.1, 22.18, 23, 438/906

[56] References Cited

U.S. PATENT DOCUMENTS

3,893,869 7/1975 Mayer et al. ............................. .. 134/1

4,927,781 5/1990 Miller . 5,331,180 7/1994 Yamada et al. ........................... .. 257/3

5,372,962 12/1994 Hirota et a1. . 5,427,977 6/1995 Yamada ................................. .. 437/127

5,510,633 4/1996 Orlowski et al. 257/93 5,626,159 5/1997 Erk et al. .......................... .. 134/902 X

FOREIGN PAT ENT DOCUMENTS

0502237 9/1992 European Pat. Off. . 0572211 12/1993 European Pat. Off. .

OTHER PUBLICATIONS

Handbook of Semiconductor Wafer Cleaning Technology, Noyes Publications, pp. 48—56, 76—85, 134—142, 390—394 and 597—598, 1993.

S. Ojima et al., “Advanced Wet Cleaning of Wafers With Reduced Chemicals and DI Water Consumption”, research report IEICE, SDM 95—86, ICD 95—95, pp. 105—112, Jul. 1995. M. Morita and T. Ohmi, “Current Understanding of the Native Oxides”, abstract, Ultra Clean Technology, vol. 1, No. 1, pp. 22—28, 1989. T. Yonehara et al., “Epitaxial layer transfer by bond and etch back of porous Si,”Appliea' Physics Letters 64 (16), Apr. 18, 1994. O.I. Babikov, “Ultrasonic Modular Units for Cleaning Semi conductor Structures in DeioniZed Water With Increased Intensity of the PieZoceramic Transducers”, Elektrotekh nika, vol. 62, No. 6, pp. 74—77, 1991. Patent Abstracts of Japan, vol. 15, No. 130 (E—1051), Mar. 29, 1991, corresponding to JP 03—014230. Patent Abstracts of Japan, vol. 12, No. 049 (E—582), Feb. 13, 1988, corresponding to JP 62—198127. Patent Abstracts of Japan, vol. 18, No. 651 (C—1285), Dec. 9, 1994, corresponding to JP 06—254521. Patent Abstracts of Japan, vol. 16, No. 465 (E—1270), Sep. 28, 1992, corresponding to JP 04—165620. Patent Abstracts of Japan, vol. 16, No. 420 (E—1259), Sep. 4, 1992, corresponding to JP 04—144131. Patent Abstracts of Japan, vol. 18, No. 684 (E—1650), Dec. 22, 1994, corresponding to JP 06—275866. Patent Abstracts of Japan, vol. 18, No. 493 (E—1606), Sep. 14, 1994, corresponding to JP 06—168660.

Primary Examiner—Jill Warden Assistant Examiner—AleXander Markoff Attorney, Agent, or Firm—FitZpatrick, Cella, Harper & Scinto

[57] ABSTRACT

Provided is a suitable cleaning method of a porous semi conductor substrate Without collapse of the porous structure due to cavitation or resonance. In a cleaning method of a porous surface of a semiconductor substrate having the porous structure at least in the surface, cleaning for remov ing dust particles adhering to the porous surface of the substrate takes place With pure Water on Which a high frequency Wave With a frequency in the range of from 600 kHZ to 2 MHZ is superimposed.

9 Claims, 23 Drawing Sheets

U.S. Patent May 9, 2000 Sheet 2 0f 23 6,058,945

19);. 7'1"," K

23 .""""o

F/G. 3A F/G. 3B


111/\/

H6. 5

_. _ M

5 4 3 5329252828 R E Mm WW FM ow TE NU UP OP MU AS

6,058,945

m

m m

m w

W G

E m m N0 E L

I. L

n. ,/

M

5 ,.

w .. w

% A B 2

6 6 w

m . G.

0

w E: / F

M m o

W W

400

30

95GB; 8

3S3; 0Q

U.S. Patent

WIDTH/ mm


INLET

O

LENGTH/ mm

FIG. 7A

140 23° 0 4 1 53.1.9._/.5._ 222111 5S3; NZ

WIDTH/ mm

FIG. 7B

5. 2

97. 4|

.1“

21. 3. 2

53MB; NZ / 115

140 230 LENGTH/ mm

M

WIDTH/ mm


F/G. 8A

DO VALUE/ ppb

WIDTH/ mm

DO VALUE/ ppb

“140 0 140 230 LENGTH/ mm

WIDTH/ mm


F/G. 9A

5. 2

9. 1

31! 22 53MB; NZ

7. 1

5. 1

LENGTH/ mm —140

WIDTH/ mm

H6. 98

INLET

5. 2

/ 00.197 2211 553/; N2 115 5. 1

140 23° LENGTH/ mm 0 0 4 4

WIDTH/ mm

Sheet 9 0f 23 6,058,945

295%; EmwwEmTE ZQEEZWQZOQ ZQZEZWOZS S5250 msmEvm wwm ww ww wwm ww mi wmm mm Hm wmm Wm Wm Ema w W3 Ema w W3

90 80 l3 l3

|LPB1

May 9, 2000

E92 E0 E}: U E10; O._. m6 “mm 513 9 S

U.S. Patent

S .mI

02 cm? oom


FIG. 77

W 17” |:_’___ 34

355' I

38’\ x36 311/

‘*0 ~' F

32%

FIG. 72

PARTICLE OF 0.3,um OR MORE


2152?: I'll woéopm 3m @5253 220282

+ Ea

u: _ 50%;:

awmzgomg 222526 EEEEEE 2:

+ Ea mzoNo _ ‘ Ea

052.50g;

3m 35 in For Ea Ea Ea _ 2mm _

mzmhmmzw _m ism it E

3 @I


FIG. 77


F/G. 79

Z 0.2,um

0% M g-V/A WW4

0 0 0 0 Emu/is mmE wmdrE/E m0 mmmézz

POSITION OF SLOT

F/G. 20 450

w “Fl/é

4.7 ///u

m Q @m

u E

>__ WW 4 .

P m n g-z,

_ _ h

mmE<>> mmm wmdFm/E H5 mmms?z

POSITION OF SLOT

U.S. Patent

NUMBER OF PARTICLES PER WAFER NUMBER OF PARTICLES PER WAFER

300

200

100

300

200

100

May 9, 2000 Sheet 18 0f 23 6,058,945

; 0.2/1 m

(REVERSED) 113

E 5% é a 5 10 15 20 25

POSITION OF SLOT

F/G. 22

_ Z 0.2/1 m

_ (REVERSED)

65

24 20 22 13

5 10 15 2O 25

POSITION OF SLOT


F/G. 23 E LU

2% z 300 P g 0.2 ,1 m I LLI [1.

(I)

g 200 |_ D: < D.

LL

0 ‘0O _ (THE POSITIVE

g DIRECTION) 2 18 2O 14 9 2 Q a g E

1 5 10 20

POSITION OF SLOT

12 11

3 5 —> > 13

§ /\

Cleaning methods of porous surface and semiconductor surface

Documents

Transcript of Cleaning methods of porous surface and semiconductor surface