Cht 2907 Apt SMD transistor

CHT2907APTCHENMKO ENTERPRISE CO.,LTD

SURFACE MOUNT PNP Switching Transistor

VOLTAGE 60 Volts CURRENT 0.6 Ampere

APPLICATION

FEATURE* Small surface mounting type. (SOT-23)* High current (Max.=600mA). * Suitable for high packing density.

CONSTRUCTION* PNP Switching Transistor

* Telephony and proferssional communction equipment.* Other switching applications.

2002-7

* Low voltage (Max.=60V) .* High saturation current capability.* Voltage controlled small signal switch.

CIRCUIT

MARKING* 2F-

E

C

B

LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter − -60 V

VCEO collector-emitter voltage open base − -60 V

VVEBO emitter-base voltage open collector − -5

IC collector current (DC) − -600 mA

ICM peak collector current − -800 mA

IBM peak base current − -200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 350 mW

Tstg storage temperature −65 +150 °CTj junction temperature − 150 °CTamb operating ambient temperature −65 +150 °C

SOT-23

(1)

(2)

(3)

.119

( 3.0

4)

.007

( 0.1

77)

.002

( 0.0

5)

.110

( 2.8

0)

.103 (2.64)

.028 (0.70)

.020 (0.50).055 (1.40).047 (1.20)

.045 (1.15)

.033 (0.85)

.086 (2.20)

.082

( 2.1

0)

.041

( 1.0

5)

.019

( 0.5

0)

.018

( 0.3

0)

.033

( 0.8

5)

.066

( 1.7

0)

(1)

(2)

(3)

Dimensions in inches and (millimeters) SOT-23

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise speciÞed.

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 357 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = -60 V − -10 nA

IEBO

IC = 0; VCB = -60 V; Tj = 125 OC − -10 uA

emitter cut-off current IC = 0; VEB = 5 V − -10 nA

IC = -1.0 mA; VCE = -10V

IC = -10 mA; VCE =- 10V 7550

hFE DC current gain IC = -0.1 mA; VCE = -10V; note 1 35

−−

−IC = -10 mA; VCE = -10V;Ta = -55OC 35 −IC = -150 mA; VCE = -10V 100 300

IC = -150 mA; VCE = -1.0V 50 −IC = -500 mA; VCE = -10V 40 −

VCEsat collector-emitter saturationvoltage

IC = -150 mA; IB = -15 mA − -400 mV

IC = -500 mA; IB = -50 mA − -1.6 V

VBEsat base-emitter saturation voltage IC = -150 mA; IB = -15 mA -0.6 -1.3 V

IC = -500 mA; IB = -50 mA − -2.6 V

Cc collector capacitance IE = ie = 0; VCB = - 5 V; f = 1 MHz − 8

Ce emitter capacitance IC = ic = 0; VBE = -500 mV;f = 1 MHz

− 30 pF

pF

fT transition frequency IC = -20 mA; VCE = - 20 V;f = 100 MHz

200 − MHz

F noise figure IC = 100 µA; VCE = - 5 V; RS = 1 kΩ;f = 1.0 kHz

− 4 dB

Switching times (between 10% and 90% levels);

ton turn-on time ICon = -150 mA; IBon = -15mA;IBoff = −15 mA

− 35 ns

td delay time − 10 ns

tr rise time − 40 ns

toff turn-off time − 100 ns

ts storage time − 80 ns

tf fall time − 30 ns

RATING CHARACTERISTIC CURVES ( CHT2907APT )


Collector-base capacitance CCB = f (VCB)f = 1MHz

10pF

10 10 V

C

CB

10

5

10

cb

5 5 5-1 0 1 2

10

2

1

100

5

V

Total power dissipation Ptot = f (TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

30

60

90

120

150

180

210

240

270

300

mW360

Pto

t

Transition frequency fT = f (IC)VCE = 5V

10MHz

10 10 mA

f

C

10

5

10

T

5 5 5

Ι

0 1 2 3

10

3

2

101

5

Permissible pulse loadPtotmax / PtotDC = f (tp)

10-6

010

5

D =

5

101

5

102

310

10-5 10-4 10-3 10-2 100s

00.0050.010.020.050.10.20.5

totmax

totP DC

P

pt

t p

=DT

t p

T


Delay time td = f (IC)Rise time tr = f (IC)

10

10 mA

t

C

5r

10

3

2

101

5

10 100 1 2

Ι5 5

nsBEV

td,

= 0 V

3105

td

t r

, = 10 VCCV ,

CC= 20 VBEV V, = 30 V

Saturation voltage IC = f (VBEsat, VCEsat)hFE = 10

10

0 V

BE sat

C

10

3

1

10-1

5

100

5

Ι

V

mA

0.2 0.4 0.6 0.8 1.0 1.2 1.6

CE satV,

5

102VBEVCE

10-2

Storage time tstg = f (IC)

10

10 mA

t

C

5stg

10

3

2

101

5

10 100 1 2

Ι5 5

ns

FEh = 10

3105

FE = 20h

Fall time tf = f (IC)

10

10 mA

t

C

5f

10

3

2

101

5

10 100 1 2

Ι5 5

ns

FEh = 10

3105

FE = 20h

VCC = 30 V


DC current gain hFE = f (IC)VCE = 5V

10

10 mA

h

C

10

5FE

10

3

2

101

5

10 10 10-1 0 1 2 3

Ι

-50 OC

25 OC

150 OC


Test circuits

Delay and rise time

200ohmS

-30

V

Osc.

< 5 nst r

ns200

= 50ohmS< 2ns

Input

r

Zt

0

0-16 V

1 k

50ohmS

Storage and fall time

37ohmS

-6

-300

+15 V

1

k

V

V

< 2 ns= 50ohmS

Input

tZr

0

200 ns

1 k

50ohmS

Osc.

< 5 nst r

Oscillograph: R > 100ohmS , C < 12pF, tr < 5ns

Cht 2907 Apt SMD transistor

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