Spansion Confidential

Engineering Document

Resistive switching for next generation Flash technology

Christie Marrian, Spansion

10/24/07

2004-06-28 2SPANSION Confidential

Cautionary Statement

This presentation and comments made pursuant thereto may containforward-looking statements that are made pursuant to the safe harbor provisions of the Private Securities Litigation Reform Act of 1995, including statements regarding future deployment of MirrorBit™technology, the company's ability to capitalize on its product and technology leadership and its operational efficiency. Investors are cautioned that the forward-looking statements in this presentation involve risks and uncertainties that could cause actual results to differ materially from the company's current expectations, including the possibility that demand for the company's Flash memory products will be lower than currently expected; that customer acceptance of MirrorBit technology will not continue to increase; that OEMs will increasingly choose NAND-based Flash memory products over NOR- and MirrorBit ORNAND architecture-based Flash memory products for their applications; that there will be a lack of customer acceptance of MirrorBit ORNAND architecture-based Flash memory products; that the company will not achieve its current product and technology introduction or implementation schedules; that the company will not be able to meet customer demand during cyclical industry or economic downturns; that competitors will introduce new memory technologies that render the company's Flash memory products uncompetitive or obsolete. The company urges investors to review in detail the risks and uncertainties in the company's Securities and Exchange Commission filings, including but not limited to the company's Annual Report on Form 10-K for the year ended December 25, 2005.

3

Introduction

• NAND market – Almost 100% data storage. – Memories are mostly for memory cards or memory products.

• NOR market – Mainly for code storage.– Memories are embedded in systems.

• NOR flash memory technology – Only for NOR market? No.

5,572

2,195

7,237

4,503

9,143

6,4677,971

10,598

0

2,000

4,000

6,000

8,000

10,000

12,000

2002 2003 2004 2005

NAND/NOR Sales ($M)Source : WSTS

NOR NAND

NAND

NOR

2004-06-28 4SPANSION Confidential

Cellular Requirements

Source: Spansion estimates for 2006

64Mb

256Mb

128Mb

512Mb

1Gb+

Camera

64-Channel Sound

Search Engine

Navigation

16Mb

32Mb

Voice

Color LCD

High-end Multimedia

12%

8%

23%

13%

14%

20%10%

5

Floating Gate Cell Basic Operations

• Initial cell VT is low (Data 1).

5V

-9V

Open

Erase4V

GND 1V

Read

GND

9V

5V

Program

Most erased Soft program Least erased Program

0 1 2 3 4 5 6

10

8

6

4

2

0

VG (V)

ID (µA) Read

6

Floating Gate Scaling Barrier

• Floating gate electro-static interaction– Narrow floating-gate spacing– Tall floating gate

Floating gate

Silicon body

Control gate

FG-FG coupling effect

(animation)

Tunnel oxide

7

Nitride Storage

• The favorite NVM technology– Charge does not move around the storage electrode– Less floating gate electro-static interaction results in denser memories.

Nitride

Silicon body

Control gate

Tunnel oxide

8

MirrorBit Basic Operations

• Channel hot electron (CHE) programming

• Transpose source and drain for reading the data

• Band to band (BTBT) hot hole injection erasing

-6V

GND 5.5V

Erase

1.2V

4.5V

Read9V

GND

Program SourceDrain

GND4V

Local VT shift

EC

EV

BTBT hot hole injection

EC

EV

CHE injection

2004-06-28 9SPANSION Confidential

Cell Operation

W/L B/L CommonRead 5V 0.5V 0VProgram 18V 0/10V 0VErase 0V 18V Float

W/L B/Ln B/L n+1Read 5V 1.5V 0VProgram 10V 5/0V 0VErase -6V 5V Float

W/L B/L CommonRead 5V 0.5V 0VProgram 10V 5/0V 0VErase -18V 0V Float

Cell Size: ~4.5λ2 Cell Size: ~(6λ2)/2 Cell Size: ~9.5λ2

Floating-GateNAND

Floating-GateNOR

MirrorBit™ technology

9/28/06 10

MirrorBit® Quad:Technology of the Future—Today

Eff

ecti

ve C

ell S

ize

(µm

2)

Node (nm)

90 65 45 320.001

0.01

0.1

Source: Spansion Estimates September 2006

Production

2008200720062005

45nm

65nm

90nm

110nm

Scaling to 32nm and Beyond Goal – One Node Per Year

MirrorBit® QuadMirrorBitNAND SLCNAND MLC

10/26/2007 11

Emerging Memory Technologies

Write time per bitRead access time

Scalability

Fast

Fast

Good

FRAM

NOR flash

NAND flash

RRAM,PRAM, MRAM

DRAM

10/26/2007 12

SourceDrain

Gate

Bottom electrodeMemory element

Top electrode

Memory Cell Structure

Cu

TE

Cu2O

! MIM memory element built on a via! Memory element connected with a select transistor! Fully compatible with standard CMOS process

50 nm

132004-06-28

Background – Trapping Model*

• OFF state mainly by space-charge-limited-conduction (SCLC)and Frenkel-Poole (FP)

• OFF"ON switch at trap-filled-limit voltage (VTFL)

*Chen et. al "Non-volatile resistive switching for advanced memory applications," Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International , vol., no.pp. 746- 749, 5-7 Dec. 2005

Cu2O MIM Memory Cell

OFF state VPGM

VER

Ilimit

-2 0 2 4-20µ

-10µ

0

10µ

20µ

30µ

40µ

50µ

Cur

rent

(A)

Voltage (V)

142004-06-28

Electrode Effect

OFF-state current leakage increases with reactivity between top electrode and Cu2O (Ni / Co<Ti<Ta).

Free energy of formation

-457Ta2O5

-212TiO2

-51.7NiO

-51CoO

∆Go (kcal/mole)Mox

Voltage (V)

1E-14

1E-13

1E-12

1E-11

1E-10

1E-9

1E-8

1E-7

1E-6

1E-5

0.0001

0 0.5 1 1.5 2 2.5 3

|Cur

rent

(A)|

TaTiNiCo

152004-06-28

Switching Characteristics: Ni vs. Ti TE

Cells with Ni top electrode• Erase with both polarity• Higher erase current

Cells with Ti top electrode• Reverse polarity field• Low erase current

V

I

Vg

Cu

TE+

-

Cu2O

Voltage (V)-2 -1 0 1 2 3

|Cur

rent

(A)|

2.E-05

4.E-05

6.E-05

8.E-05

1.E-04

0.E+00

Program

Erase

Erase

Ilimit

TE= NiTE= Ti

10/26/2007 16

ON/OFF Window

! Model predicts high ON/OFF ratio with deep-trap materials

! ON/OFF ratio of 105 – 106 observed

0.0 0.2 0.4 0.6 0.8 1.0100f

1p10p

100p1n

10n100n

1µ10µ

Cur

rent

(A)

Voltage (V)

ON state

OFF state

Current (uA)0.005 0.... 0.05 0.1 0.5 1 5 10

-2

-1

0

1

2

0.005 0.01 0.05 0.1 0.5 1 5 10Current (uA)

Cum

ulat

ive

Prob

abili

ty2%

16%

50%

84%

9

8%

OFF ON

Current read at 0.5V

Tester resolution

10/26/2007 17

Retention

101 102 103 104 10510-7

10-6

10-5

Cur

rent

(A)

Time (min)

90°C 30 hrs retention

25°C 50 hrs retention! Long retention predicted with deep-trap materials

! Retention related to program current

0 0.2 0.4 0.6 0.8 1 1.2

-2

-1

0

1

2

0 0.2 0.4 0.6 0.8 1 1.2Current(50hr) / Current(0hr)

Cum

ulat

ive

Prob

abili

ty2%

16%

50%

84%

9

8%

M.A. Lampert et al, “Current injection in solids”, Academic Press, 1970.

10/26/2007 18

Cycling

0 100 200 300 400 500 6000.01

0.050.1

0.51

5

10

Cycle

Rea

d cu

rren

t (uA

)

10:1 operation window

! Program with 100 ns pulses

! 0.5uA – 5uA window for cycling

192004-06-28

Electrical Characteristics Summary

Zero up to 25 hours at V < 0.5VRead disturb

0.18 umCell size

> 600 cycles testedCycling

30 hours at 90°C testedRetention

≤ 100 nsSpeed

1-2 VVErasing

≤ 100 nsSpeed

(2-5 V) / (~ 50 uA)V/IProgramming

ValuesCharacteristics

A. Chen et. Al, IEDM 2005

202004-06-28

BEOL Thin Film Challenges for RCM

• Thin ~100A metal oxide films• Hard to etch (process) metal films

– Interfaces in metal-oxide-metal cell

• Highly planar CMP– Maintain electric field uniformity across cell

• Phase Change RCM– Ternary materials plus dopant– Encapsulation

Erase Mechanism for Copper Oxide Resistive Switching Memory Cells with Nickel Electrode

Advanced Memory GroupSpansion Inc

T-N Fang, S. Kaza, S. Haddad, A. Chen, Y-C Wu, Z. Lan, S. Avanzino, D. Liao, C. Gopalan, S. Choi, S. Mahdavi, M. Buynoski, Y. Lin, C. Marrian, C. Bill, M. VanBuskirk, and M. Taguchi

2004-06-28 22

Spansion Confidential

Engineering Document

2004-06-28 23

Spansion Confidential

Engineering Document

Trademark Attribution

Spansion, the Spansion Logo and combinations thereof are trademarks of Spansion LLC. Other product names used in this presentation are for identification purposes only and may be trademarks of their respective companies.