Chip Macro Modldels - Ansys...Enabling Fast and High Capacity SSO Analysis 5Transistor w/27bit IBIS...
Transcript of Chip Macro Modldels - Ansys...Enabling Fast and High Capacity SSO Analysis 5Transistor w/27bit IBIS...
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h d lChip Macro ModelsEnabling 3D‐IC and IC‐Package‐PCB Co analysisPCB Co‐analysis
Ji Zheng, Ph.D.Director of Chip‐Package‐System
© 2011 ANSYS, Inc. August 25, 20111
Apache Design, a wholly‐owned subsidiary of ANSYS
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Chip‐Package‐System (CPS) Solutions
Power IntegrityPower Integrity
Signal IntegritySignal Integrity
EMI/EMC
Thermal Integrity
© 2011 ANSYS, Inc. August 25, 20112
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On‐die Power Ground Network
Vdd Pad
L RRCdevRpg
Cpg
L
Cmacro
Rmacro
Cdecap
Rdecap
Rload
Rpg
Cload Cload
macrodecapVss Pad
Non-switching instanceOutput: 1->1
Switching instance
© 2011 ANSYS, Inc. August 25, 20113
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Chip Power Model (CPM)
CHIP DATA
Layout (Early or Sign‐off)
Library
CHIP ANALYSIS
DynamicStatic Dynamic
VCD
Dynamic Smart
VectorLess
Static (Iavg, R)Frequency domain (RLC)Modes
Chip Power Model
© 2011 ANSYS, Inc. August 25, 20114
Time‐domain (I(t), RLC)
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Accuracy / Self‐consistency Correlation
VDD CurrentVDD Current
CPM‐SPICERedHawk™
VSS Current
© 2011 ANSYS, Inc. August 25, 20115
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Enabling Global PDN Analysis
CPM
System ACSimulation
Package/PCB DC Analysis
© 2011 ANSYS, Inc. August 25, 20116
Decap Planning System TransientSimulation
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Enabling 3D‐IC Power Integrity Analysis
Higher Voltage Drop in the Center Due to
Memory Die
Voltage Drop Map of Single Logic Die
© 2011 ANSYS, Inc. August 25, 20117
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SiP Multi‐die Power Integrity
© 2011 ANSYS, Inc. August 25, 20118
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Enabling PDN Emission Simulation for EMI
Measurement Correlation for Conducted Emission
Radiated EmissionConducted Emission
Original Design
© 2011 ANSYS, Inc. August 25, 20119 With Added Decaps
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I/O Sub‐system Noise and Timing
DDR Circuit DesignDesign(SPICE Netlist)
RDL Design
IO Ring Place & R t
DDR Subsystem
Design(GDS / DEF)
Route(DEF / GDS
/ LEF)
Subsystem Sign-off
Package Design
SoC Core Physical Design
(S / RLCK)
PCB &
yDesign
(CPM)
© 2011 ANSYS, Inc. August 25, 201110
Decaps(S / RLCK)
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Chip Signal Model (CSM)
vsso
CSM
vddcModels non‐linear I/O behavior & P/G parasitics
Speed‐up DDR system simulationEnables DDR C‐P‐B co‐verification
vddc
vddo
vsso
CSM
vddc vddo
© 2011 ANSYS, Inc. August 25, 201111
Correlation with full transistor modelCorrelation with full transistor model
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Non‐linear I/O Macro‐Model
• Chip Signal Model (CSM) employs proprietary l / d l hnon‐linear I/O macro‐model to represent the
complex I/O devices
• Non‐linear I/O macro‐modelhi i l l• Achieves transistor‐level accuracy
• Preserves power / ground noise fluctuation impact on signal timing and noiseon signal timing and noise
• Significantly reduces circuit complexity
© 2011 ANSYS, Inc. August 25, 201112
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I/O Cell Black Box Model
( , )i f u ( , )i f u
Xtor Cell I/O Cell Model
[ ; ; ; ]u Vin Vout Vdd Vss
• Model input: u (input, output and power/ground voltage)
• Model output: i (Iout or Idd or Iss, current at P/G or output pin)
• Parametric model: f (composition of artificial Neutral Network and Local Linear State Space)
© 2011 ANSYS, Inc. August 25, 201113
• Model parameters: θ (coefficients parametric model)
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Enabling Fast and High Capacity SSO Analysis
5 Transistor w/ 27bit IBIS Power Noise Aggressor Model
32bit CSM
32bit All Transistor Upper waveform: Victim netMiddle waveform: Power netLower waveform: Ground net
Run Time (s) VDD Swing (V) # Nodes # Elements # MosfetsAll-Transistor 12000 0.24 1021805 1701143 113088
All CIOM 1750 0 239 7328 7805 0
5 Transistor w/ 27bit IBIS Power Noise Aggressor Model
© 2011 ANSYS, Inc. August 25, 201114
All-CIOM 1750 0.239 7328 7805 0
Transistors + IBIS 4070 0.38 160073 266336 17670
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Thermal – A Key to 3D‐IC Reliability
• Leakage Power
• Electromigrationg
• TSV Design• TSV Design
• Active Device Integration in Silicon Interposer
© 2011 ANSYS, Inc. August 25, 201115
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Chip Thermal Model (CTM)
Power Density map over temperature
Tile based metal density per layer from die physical geometry and dielectric (P d Si l ti )
© 2011 ANSYS, Inc. August 25, 201116
(Power and Signal routing)
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Enabling Chip‐Package Thermal Co‐analysis
P k L tChi Th l M d l Package LayoutSentinel-TI Analysis
Chip Thermal Model(RedHawk/Totem)
Package/PCB Temperature Map
© 2011 ANSYS, Inc. August 25, 201117
Enables temperature dependent power and EM calculations
Enables temperature dependent power and EM calculations
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Die Temperature Map
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Enabling Thermal Co‐analysis for 3D‐IC
Memory
Logic
Bumps, Micro-bumps, and TSVs
© 2011 ANSYS, Inc. August 25, 201118