Chip Macro Modldels - Ansys...Enabling Fast and High Capacity SSO Analysis 5Transistor w/27bit IBIS...

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h dl Chip Macro Models Enabling 3DIC and ICPackagePCB Co analysis PCB Coanalysis Ji Zheng, Ph.D. Director of ChipPackageSystem © 2011 ANSYS, Inc. August 25, 2011 1 Apache Design, a whollyowned subsidiary of ANSYS

Transcript of Chip Macro Modldels - Ansys...Enabling Fast and High Capacity SSO Analysis 5Transistor w/27bit IBIS...

  • h d lChip Macro ModelsEnabling 3D‐IC and IC‐Package‐PCB Co analysisPCB Co‐analysis

    Ji Zheng, Ph.D.Director of Chip‐Package‐System

    © 2011 ANSYS, Inc. August 25, 20111

    Apache Design, a wholly‐owned subsidiary of ANSYS

  • Chip‐Package‐System (CPS) Solutions

    Power IntegrityPower Integrity

    Signal IntegritySignal Integrity

    EMI/EMC

    Thermal Integrity

    © 2011 ANSYS, Inc. August 25, 20112

  • On‐die Power Ground Network

    Vdd Pad

    L RRCdevRpg

    Cpg

    L

    Cmacro

    Rmacro

    Cdecap

    Rdecap

    Rload

    Rpg

    Cload Cload

    macrodecapVss Pad

    Non-switching instanceOutput: 1->1

    Switching instance

    © 2011 ANSYS, Inc. August 25, 20113

  • Chip Power Model (CPM)

    CHIP DATA

    Layout (Early or Sign‐off)

    Library

    CHIP ANALYSIS

    DynamicStatic Dynamic 

    VCD

    Dynamic Smart 

    VectorLess

    Static (Iavg, R)Frequency domain (RLC)Modes

    Chip Power Model

    © 2011 ANSYS, Inc. August 25, 20114

    Time‐domain (I(t), RLC)

  • Accuracy / Self‐consistency Correlation

    VDD CurrentVDD Current

    CPM‐SPICERedHawk™

    VSS Current

    © 2011 ANSYS, Inc. August 25, 20115

  • Enabling Global PDN Analysis

    CPM

    System ACSimulation

    Package/PCB DC Analysis

    © 2011 ANSYS, Inc. August 25, 20116

    Decap Planning System TransientSimulation

  • Enabling 3D‐IC Power Integrity Analysis

    Higher Voltage Drop in the Center Due to

    Memory Die

    Voltage Drop Map of Single Logic Die

    © 2011 ANSYS, Inc. August 25, 20117

  • SiP Multi‐die Power Integrity

    © 2011 ANSYS, Inc. August 25, 20118

  • Enabling PDN Emission Simulation for EMI

    Measurement Correlation for Conducted Emission

    Radiated EmissionConducted Emission

    Original Design

    © 2011 ANSYS, Inc. August 25, 20119 With Added Decaps

  • I/O Sub‐system Noise and Timing

    DDR Circuit DesignDesign(SPICE Netlist)

    RDL Design

    IO Ring Place & R t

    DDR Subsystem

    Design(GDS / DEF)

    Route(DEF / GDS

    / LEF)

    Subsystem Sign-off

    Package Design

    SoC Core Physical Design

    (S / RLCK)

    PCB &

    yDesign

    (CPM)

    © 2011 ANSYS, Inc. August 25, 201110

    Decaps(S / RLCK)

  • Chip Signal Model (CSM)

    vsso

    CSM

    vddcModels non‐linear I/O behavior & P/G parasitics

    Speed‐up DDR system simulationEnables DDR C‐P‐B co‐verification

    vddc

    vddo

    vsso

    CSM

    vddc vddo

    © 2011 ANSYS, Inc. August 25, 201111

    Correlation with full transistor modelCorrelation with full transistor model

  • Non‐linear I/O Macro‐Model

    • Chip Signal Model (CSM) employs proprietary l / d l hnon‐linear I/O macro‐model to represent the 

    complex I/O devices

    • Non‐linear I/O macro‐modelhi i l l• Achieves transistor‐level accuracy

    • Preserves power / ground noise fluctuation impact on signal timing and noiseon signal timing and noise

    • Significantly reduces circuit complexity

    © 2011 ANSYS, Inc. August 25, 201112

  • I/O Cell Black Box Model

    ( , )i f u ( , )i f u

    Xtor Cell I/O Cell Model

    [ ; ; ; ]u Vin Vout Vdd Vss

    • Model input: u (input, output and power/ground voltage)

    • Model output: i (Iout or Idd or Iss, current at P/G or output pin)

    • Parametric model: f (composition of artificial Neutral Network and Local Linear State Space)

    © 2011 ANSYS, Inc. August 25, 201113

    • Model parameters: θ (coefficients parametric model)

  • Enabling Fast and High Capacity SSO Analysis

    5 Transistor w/ 27bit IBIS Power Noise Aggressor Model

    32bit CSM

    32bit All Transistor Upper waveform:   Victim netMiddle waveform:  Power netLower waveform:   Ground net

    Run Time (s) VDD Swing (V) # Nodes # Elements # MosfetsAll-Transistor 12000 0.24 1021805 1701143 113088

    All CIOM 1750 0 239 7328 7805 0

    5 Transistor w/ 27bit IBIS  Power Noise Aggressor Model

    © 2011 ANSYS, Inc. August 25, 201114

    All-CIOM 1750 0.239 7328 7805 0

    Transistors + IBIS 4070 0.38 160073 266336 17670

  • Thermal – A Key to 3D‐IC Reliability

    • Leakage Power

    • Electromigrationg

    • TSV Design• TSV Design

    • Active Device Integration in Silicon Interposer

    © 2011 ANSYS, Inc. August 25, 201115

  • Chip Thermal Model (CTM)

    Power Density map over temperature

    Tile based metal density per layer from die physical geometry and dielectric (P d Si l ti )

    © 2011 ANSYS, Inc. August 25, 201116

    (Power and Signal routing)

  • Enabling Chip‐Package Thermal Co‐analysis

    P k L tChi Th l M d l Package LayoutSentinel-TI Analysis

    Chip Thermal Model(RedHawk/Totem)

    Package/PCB Temperature Map

    © 2011 ANSYS, Inc. August 25, 201117

    Enables temperature dependent power and EM calculations

    Enables temperature dependent power and EM calculations

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    Die Temperature Map

  • Enabling Thermal Co‐analysis for 3D‐IC

    Memory

    Logic

    Bumps, Micro-bumps, and TSVs

    © 2011 ANSYS, Inc. August 25, 201118