CHEM 3493

7
CHEM 3493 Contact Mode and Tapping Mode

description

CHEM 3493. Contact Mode and Tapping Mode. CdSe / ZnS QDs 10x Diluted (org. conc.=5mg/ mL ). 3 µm 2. 2 µm 2. 1 µm 2. Topography. Lateral Force. CdSe / ZnS QDs 10x Diluted (org. conc.=5mg/ mL ; new area). 2 µm 2. 500 nm 2. Height Profile. Topography. Lateral Force. - PowerPoint PPT Presentation

Transcript of CHEM 3493

Page 1: CHEM 3493

CHEM 3493

Contact Mode and Tapping Mode

Page 2: CHEM 3493

CdSe/ZnS QDs 10x Diluted (org. conc.=5mg/mL)

Topo

grap

hyLa

tera

l For

ce

3 µm2 2 µm2 1 µm2

Page 3: CHEM 3493

CdSe/ZnS QDs 10x Diluted (org. conc.=5mg/mL; new area)

Topo

grap

hyLa

tera

l For

ce

2 µm2 500 nm2 Height Profile

http://www.spectro.jussieu.fr/Optquant/Semi_conducteurs/Nanocristaux/index_nanocrystals.html

Particle Size=6.3 nm

Page 4: CHEM 3493

PEG-silane Rings (prepared by particle lithography combined with vapor depostion)

Topography

Amplitude

Phase

2[METHOXY(POLYETHYLENEOXY)PROPYL]TRICHLOROSILANE

PEG-silane

3 µm

3 µm

3 µm

1.5 µm 1 µm

1.5 µm

1.5 µm

1 µm

1 µm

Page 5: CHEM 3493

PEG-silane Rings (prepared by particle lithography combined with vapor depostion)

250 nm

80 nm

250 nm

80 nm

Topography Phase

Page 6: CHEM 3493

Topography Lateral Force

Nanografting (C12 SAM)

Page 7: CHEM 3493

Topography Height Profile

Nanografting (C12 SAM)