Chapter 2 Overview of Power Semiconductor Devices

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Electrónica de Potência © 2008 José Bastos Chapter 2 Power Semiconductor Switches: An Overview 2-1 Chapter 2 Overview of Power Semiconductor Devices Introduction • Diodes • Thyristors • Ideal switches • Bipolar transistors • MOSFETs • MOS-Controlled Thyristors • Comparison of controllable switches

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Chapter 2 Overview of Power Semiconductor Devices. Introduction Diodes Thyristors Ideal switches Bipolar transistors MOSFETs MOS-Controlled Thyristors Comparison of controllable switches. Thyristors. Semi-controlled device Latches ON by a gate-current pulse if forward biased - PowerPoint PPT Presentation

Transcript of Chapter 2 Overview of Power Semiconductor Devices

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Electrónica de Potência© 2008 José Bastos

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Chapter 2 Overview of Power Semiconductor Devices

• Introduction• Diodes• Thyristors• Ideal switches• Bipolar transistors• MOSFETs• MOS-Controlled Thyristors• Comparison of controllable switches

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Thyristors

• Semi-controlled device• Latches ON by a gate-current pulse if forward biased• Turns-off if current tries to reverse

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Thyristor in a Simple Circuit

• For successful turn-off, reverse voltage required for an interval greater than the turn-off interval

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Generic Switch Symbol

• Idealized switch symbol• When on, current can flow only in the direction of the arrow• Instantaneous switching from one state to the other• Zero voltage drop in on-state• Infinite voltage and current handling capabilities

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Switching Characteristics (linearized)

Switching Power Loss is proportional to:• switching frequency• turn-on and turn-off times

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• Small leakage current in off state• Small on state voltage• Short turn-on and turn-off• Large forward and reverse voltage• High on state current rating• Positive temperature coefficient• Small control power required to switch• Capability to survive rated voltage and rated current simultaneously

Switch: ideal characteristics

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Bipolar Junction Transistors (BJT) #1

• Used commonly in the past• Now used in specific applications• Replaced by MOSFETs and IGBTs

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Bipolar Junction Transistors (BJT) #2

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Bipolar Junction Transistors (BJT) #3

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Various Configurations of BJTs

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Conclusions BJTs

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MOSFETs #1

• Easy to control by the gate• Optimal for low-voltage operation at high switching frequencies• On-state resistance a concern at higher voltage ratings

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MOSFETs #2

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IGBT

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Conclusions IGBT

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Gate-Turn-Off Thyristors (GTO)

• Slow switching speeds

• Used at very high power levels

• Require elaborate gate control circuitry

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MOS CONTROLLED THYRISTORS (MCT)

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Comparison of Controllable Switches

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Summary of Device Capabilities