Chapter 2 Fundamentals of Semiconductor 2.1...
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Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/程秀兰 程秀兰 Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal Lattice Lattice Lattice Lattice Shirla Cheng Shirla Cheng Shirla Cheng Shirla Cheng [email protected] [email protected] [email protected] [email protected] 2012.2.15 2012.2.15 2012.2.15 2012.2.15
Transcript of Chapter 2 Fundamentals of Semiconductor 2.1...
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Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal
LatticeLatticeLatticeLattice
Shirla ChengShirla ChengShirla ChengShirla [email protected]@[email protected]@sina.com
2012.2.152012.2.152012.2.152012.2.15
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
OutlineOutlineOutlineOutline
Semiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsSemiconductor Materials’’’’ Properties Properties Properties PropertiesCrystalline StructureCrystalline StructureCrystalline StructureCrystalline Structure
Crystal LatticeMiller IndexSemiconductor Crystal structure
Preparation of Single crystal semiconductor Preparation of Single crystal semiconductor Preparation of Single crystal semiconductor Preparation of Single crystal semiconductor materialmaterialmaterialmaterialSummarySummarySummarySummaryHomework Homework Homework Homework
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Semiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsSemiconductor Materials’’’’ Properties Properties Properties Properties
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WhatWhatWhatWhat’’’’s the semiconductors the semiconductors the semiconductors the semiconductorLow resistivity => Low resistivity => Low resistivity => Low resistivity => ““““conductorconductorconductorconductor””””: : : : ρρρρ=10=10=10=10-5-5-5-5 ~10 ~10 ~10 ~10-6-6-6-6Ω.cmHigh resistivity => High resistivity => High resistivity => High resistivity => ““““insulatorinsulatorinsulatorinsulator””””: : : : ρρρρ=10=10=10=1014141414 ~10 ~10 ~10 ~1018181818Ω.cmIntermediate resistivity => Intermediate resistivity => Intermediate resistivity => Intermediate resistivity => ““““semiconductorsemiconductorsemiconductorsemiconductor””””::::ρρρρ=10=10=10=10-3-3-3-3 ~10 ~10 ~10 ~103333Ω.cm
conductivity lies between that of conductors and insulatorsgenerally crystalline in structure for IC devices
Al: 2.7uΩ.cm Na: 4.7uΩ.cm
SiO2: >10 14Ω.cm
Ge Si: ~10 4Ω.cm GaAs
0.67ev 1.1 ev 1.40 ev
8 ev
EvValence Band
Conduction Band
Ec
ConductorConductorConductorConductorConductorConductorConductorConductor
SemiconductorSemiconductorSemiconductorSemiconductorSemiconductorSemiconductorSemiconductorSemiconductor
Forbidden band
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Semiconductor ElementsSemiconductor ElementsSemiconductor ElementsSemiconductor Elements in Element Periodic Table in Element Periodic Table in Element Periodic Table in Element Periodic Table
1 18
1A 8A
1 2 13 14 15 16 17 2
H IIA IIIA IVA VA VIA VIIA He
1.01 2A 3A 4A 5A 6A 7A 4
3 4 5 6 7 8 9 10
Li Be B C N O F Ne
6.94 9.01 10.8 12 14 16 19 20.2
11 12 3 4 5 6 7 11 12 13 14 15 16 17 18
Na Mg IIIB IVB VB VIB VIIB IB IIB Al Si P S Cl Ar
23 24.3 3B 4B 5B 6B 7B 1B 2B 27 28.1 31 32.1 35.5 40
19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga Ge As Se Br Kr
39.1 40.1 45 47.9 50.9 52 54.9 55.9 58.5 58.7 63.6 65.4 69.7 72.6 74.9 79 79.9 83.8
37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54
Rb Sr Y Zr Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb Te I Xe
85.5 87.6 88.9 91.2 92.9 95.9 -98 101 103 106 108 112 115 119 122 128 127 131
55 56 57 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
Cs Ba La* Hf Ta W Re Os Ir Pt Au Hg Tl Pb Bi Po At Rn
133 137 139 179 181 184 186 190 190 195 197 201 204 207 209 -210 -210 -222
87 88 89 104 105 106 107 108 109 110 111 112 114 116 118
Fr Ra Ac~ Rf Db Sg Bh Hs Mt --- --- --- --- --- ---
-223 -226 -227 -257 -260 -263 -262 -265 -266 () () () () () ()
4
5
6
7
3
8 9 10
------- VIII -------
2
1
Peri.
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Semiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsSemiconductor Materials
11s 2s 2p 3s 3p 3d
1 H 1 1s 1
2 He 2 1s 2
3 Li 2 1 1s 2 2s 1
4 Be 2 2 1s 2 2s 2
5 B 2 2 1 1s 2 2s 2 2p1
6 C 2 2 2 1s 2 2s 2 2p2
7 N 2 2 3 1s 2 2s 2 2p3
8 O 2 2 4 1s 2 2s 2 2p4
9 F 2 2 5 1s 2 2s 2 2p5
10 Ne 2 2 6 1s 2 2s 2 2p6
11 Na 2 2 6 1 1s 2 2s 2 2p6 3s 1
12 Mg 2 2 6 2 1s 2 2s 2 2p6 3s 2
13 Al 2 2 6 2 1 1s 2 2s 2 2p6 3s 2 3p1
14 Si 2 2 6 2 2 1s 2 2s 2 2p6 3s 2 3p2
15 P 2 2 6 2 3 1s 2 2s 2 2p6 3s 2 3p3
16 S 2 2 6 2 4 1s 2 2s 2 2p6 3s 2 3p4
17 Cl 2 2 6 2 5 1s 2 2s 2 2p6 3s 2 3p5
18 Ar 2 2 6 2 6 1s 2 2s 2 2p6 3s 2 3p6
ZZZZ Nam eNam eNam eNam e NotationNotationNotationNotation2 3
# of Electrons# of Electrons# of Electrons# of Electrons
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Semiconductor Optical SourceSemiconductor Optical SourceSemiconductor Optical SourceSemiconductor Optical Source
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Semiconductor Materials for Semiconductor Materials for Semiconductor Materials for Semiconductor Materials for Optoelectronic DevicesOptoelectronic DevicesOptoelectronic DevicesOptoelectronic Devices
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Semiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsElemental Semiconductor :
Silicon (Si), Germanium (Ge)Compound Semiconductor :
IV-IV: SiCIII-V: AlP, AlAs, AlSb, GaN,GaP, GaAs,GaSb, InP, InAsII-VI: ZnO, ZnS, ZnSe,ZnTe,CdS,CdTe,HgS
Alloy SemiconductorBinary Alloys: Si1-xGexTriple Alloys: AlxGa1-xAs, AlxIn1-xAs, Cd1-xMnxTe,GaAs1-xPx,GaxIn1-xAs,GaIn1-xP, Hg1-xCdxTeQuaternery Alloys: AlxGa1-xAsySb1-y, GaxIn1-xAs1-yPy
11s 2s 2p 3s 3p 3d
1 H 1 1s 1
2 He 2 1s 2
3 Li 2 1 1s 2 2s 1
4 Be 2 2 1s 2 2s 2
5 B 2 2 1 1s 2 2s 2 2p1
6 C 2 2 2 1s 2 2s 2 2p2
7 N 2 2 3 1s 2 2s 2 2p3
8 O 2 2 4 1s 2 2s 2 2p4
9 F 2 2 5 1s 2 2s 2 2p5
10 Ne 2 2 6 1s 2 2s 2 2p6
11 Na 2 2 6 1 1s 2 2s 2 2p6 3s 1
12 Mg 2 2 6 2 1s 2 2s 2 2p6 3s 2
13 Al 2 2 6 2 1 1s 2 2s 2 2p6 3s 2 3p1
14 Si 2 2 6 2 2 1s 2 2s 2 2p6 3s 2 3p2
15 P 2 2 6 2 3 1s 2 2s 2 2p6 3s 2 3p3
16 S 2 2 6 2 4 1s 2 2s 2 2p6 3s 2 3p4
17 Cl 2 2 6 2 5 1s 2 2s 2 2p6 3s 2 3p5
18 Ar 2 2 6 2 6 1s 2 2s 2 2p6 3s 2 3p6
ZZZZ Nam eNam eNam eNam e NotationNotationNotationNotation2 3
# of Electrons# of Electrons# of Electrons# of Electrons
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The Silicon AtomThe Silicon AtomThe Silicon AtomThe Silicon Atom14 electrons occupying the 1st 3 energy levels:14 electrons occupying the 1st 3 energy levels:14 electrons occupying the 1st 3 energy levels:14 electrons occupying the 1st 3 energy levels:
1s, 2s, 2p orbitals filled by 10 electrons3s, 3p orbitals filled by 4 electrons
To minimize the overall energy, the 3s and 3p orbitals hybridize to form 4 tetrahedral 3sp orbitals
Each has one electron and is capable of forming a bond with a neighboring atom
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Types of Solid MaterialsTypes of Solid MaterialsTypes of Solid MaterialsTypes of Solid MaterialsAmorphous materials (非晶材料)
In IC : SiO2, Si3N4Amorphous silicon: solar battery plate (solar energy� electrical energy.
Crystalline materials (晶体材料)Single crystal materials (单晶材料)
Silicon wafer, GaAs wafer.
Polycrystalline materials (多晶材料)Poly-silicon (as conductor material, or resistor material)
AmorphousAmorphousAmorphousAmorphousAmorphousAmorphousAmorphousAmorphous(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4) CrystalCrystalCrystalCrystalCrystalCrystalCrystalCrystal
(Si wafer)(Si wafer)(Si wafer)(Si wafer)(Si wafer)(Si wafer)(Si wafer)(Si wafer)
PolycrystallinePolycrystallinePolycrystallinePolycrystallinePolycrystallinePolycrystallinePolycrystallinePolycrystalline(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)
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Crystal StructureCrystal StructureCrystal StructureCrystal Structure
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The periodic The periodic The periodic The periodic arrangement of atoms arrangement of atoms arrangement of atoms arrangement of atoms in the crystal is called in the crystal is called in the crystal is called in the crystal is called the the the the latticelatticelatticelattice ((((晶格晶格晶格晶格))))....
The magnitudes aThe magnitudes aThe magnitudes aThe magnitudes a1111, b, b, b, b1111 are called the lattice are called the lattice are called the lattice are called the lattice parameters.parameters.parameters.parameters.
Crystal Space LatticeCrystal Space LatticeCrystal Space LatticeCrystal Space Lattice
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aaaa1111 and b and b and b and b1111 are the are the are the are the translated distance, translated distance, translated distance, translated distance, maybe not orthogonal.maybe not orthogonal.maybe not orthogonal.maybe not orthogonal.A A A A unit cell (unit cell (unit cell (unit cell (单元晶单元晶单元晶单元晶胞胞胞胞))))is is is is a small volume of the a small volume of the a small volume of the a small volume of the crystal that can be crystal that can be crystal that can be crystal that can be used to produce the used to produce the used to produce the used to produce the entire crystal.entire crystal.entire crystal.entire crystal.A A A A primitive cellprimitive cellprimitive cellprimitive cell ((((基本胞基本胞基本胞基本胞----晶胞晶胞晶胞晶胞)))) is the smallest is the smallest is the smallest is the smallest unit cell that can be unit cell that can be unit cell that can be unit cell that can be repeated to form the repeated to form the repeated to form the repeated to form the lattice.lattice.lattice.lattice.
Unit Cell and Primitive Cell in a CrystalUnit Cell and Primitive Cell in a CrystalUnit Cell and Primitive Cell in a CrystalUnit Cell and Primitive Cell in a Crystal
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Basic Crystal Cubic StructureBasic Crystal Cubic StructureBasic Crystal Cubic StructureBasic Crystal Cubic Structure
Cu, Al, Ag, Au
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Example on FCCExample on FCCExample on FCCExample on FCC’’’’s Lattice Factorss Lattice Factorss Lattice Factorss Lattice FactorsThe hard spheres or ion cores touch one another across a face diagonal �the cube edge lengththe cube edge lengththe cube edge lengththe cube edge lengththe cube edge lengththe cube edge lengththe cube edge lengththe cube edge length, The Coordination NumberCoordination NumberCoordination NumberCoordination NumberCoordination NumberCoordination NumberCoordination NumberCoordination Number（（（（（（（（相邻原子数）相邻原子数）相邻原子数）相邻原子数）相邻原子数）相邻原子数）相邻原子数）相邻原子数）, CN
the number of closest neighbors to which an atom is bonded the number of closest neighbors to which an atom is bonded the number of closest neighbors to which an atom is bonded the number of closest neighbors to which an atom is bonded = number of touching atoms, CN = 12= number of touching atoms, CN = 12= number of touching atoms, CN = 12= number of touching atoms, CN = 12
Number of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cell（（（（（（（（单位晶胞原子数）单位晶胞原子数）单位晶胞原子数）单位晶胞原子数）单位晶胞原子数）单位晶胞原子数）单位晶胞原子数）单位晶胞原子数）, n = 4.For an atom that is shared with m adjacent unit cells, we only For an atom that is shared with m adjacent unit cells, we only For an atom that is shared with m adjacent unit cells, we only For an atom that is shared with m adjacent unit cells, we only count a fraction of the atom, 1/m.count a fraction of the atom, 1/m.count a fraction of the atom, 1/m.count a fraction of the atom, 1/m. In FCC unit cell we have: 6 face atoms shared by two cells: 6 x In FCC unit cell we have: 6 face atoms shared by two cells: 6 x In FCC unit cell we have: 6 face atoms shared by two cells: 6 x In FCC unit cell we have: 6 face atoms shared by two cells: 6 x 1/2 = 3; 8 corner atoms shared by eight cells: 8 x 1/8 = 11/2 = 3; 8 corner atoms shared by eight cells: 8 x 1/8 = 11/2 = 3; 8 corner atoms shared by eight cells: 8 x 1/8 = 11/2 = 3; 8 corner atoms shared by eight cells: 8 x 1/8 = 1••••
Atomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing Factor（密排指数）（密排指数）APF = fraction of volume occupied by hard spheres = (Sum of APF = fraction of volume occupied by hard spheres = (Sum of APF = fraction of volume occupied by hard spheres = (Sum of APF = fraction of volume occupied by hard spheres = (Sum of atomic volumes)/(Volume of cell) = 0.74 (maximum possible)atomic volumes)/(Volume of cell) = 0.74 (maximum possible)atomic volumes)/(Volume of cell) = 0.74 (maximum possible)atomic volumes)/(Volume of cell) = 0.74 (maximum possible)
ra 22=
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Crystal Planes and Miller IndicesCrystal Planes and Miller IndicesCrystal Planes and Miller IndicesCrystal Planes and Miller Indices
(100)
(110)
(111)
(111)
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Miller Index Identification ProcedureMiller Index Identification ProcedureMiller Index Identification ProcedureMiller Index Identification Procedure
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Crystal Planes in the Cubic LatticeInter-planar spacing (d,面间距)
The distance between adjacent The distance between adjacent The distance between adjacent The distance between adjacent planes in the set (hkl)planes in the set (hkl)planes in the set (hkl)planes in the set (hkl)
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Crystal Direction in Cubic LatticeCrystal Direction in Cubic LatticeCrystal Direction in Cubic LatticeCrystal Direction in Cubic Lattice
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Low Miller Index Planes of Cubic Lattice
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Miller Convention SummaryMiller Convention SummaryMiller Convention SummaryMiller Convention Summary
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Semiconductor Crystal StructureSemiconductor Crystal StructureSemiconductor Crystal StructureSemiconductor Crystal Structure
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Diamond Lattice and Zincblende LatticeDiamond Lattice and Zincblende LatticeDiamond Lattice and Zincblende LatticeDiamond Lattice and Zincblende LatticeDiamond Lattice(金刚石结构): Si, Ge
Diamond lattice can be thought of as an FCC structure with an extra atoms placed at Diamond lattice can be thought of as an FCC structure with an extra atoms placed at Diamond lattice can be thought of as an FCC structure with an extra atoms placed at Diamond lattice can be thought of as an FCC structure with an extra atoms placed at a/4+b/4+c/4 from each of the FCC atoms (similar to two sets of FCC structure).a/4+b/4+c/4 from each of the FCC atoms (similar to two sets of FCC structure).a/4+b/4+c/4 from each of the FCC atoms (similar to two sets of FCC structure).a/4+b/4+c/4 from each of the FCC atoms (similar to two sets of FCC structure).Each Si atom has 4 nearest neighbors Each Si atom has 4 nearest neighbors Each Si atom has 4 nearest neighbors Each Si atom has 4 nearest neighbors lattice constantlattice constantlattice constantlattice constant ,a = 5.431 ,a = 5.431 ,a = 5.431 ,a = 5.431ÅÅÅÅ (Si) (Si) (Si) (Si)
Zincblende Lattice (闪锌矿结构): for GaAs, InP, ZnSe, etc.consist of a Ga FCC with an extra As atoms placed at one quarter of the body consist of a Ga FCC with an extra As atoms placed at one quarter of the body consist of a Ga FCC with an extra As atoms placed at one quarter of the body consist of a Ga FCC with an extra As atoms placed at one quarter of the body diagonal of the cube. diagonal of the cube. diagonal of the cube. diagonal of the cube.
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
How Many Silicon Atoms per cmHow Many Silicon Atoms per cmHow Many Silicon Atoms per cmHow Many Silicon Atoms per cm-3-3-3-3????• Number of atoms in a unit cell: Number of atoms in a unit cell: Number of atoms in a unit cell: Number of atoms in a unit cell:
• 4 atoms completely inside cell• Each of the 8 atoms on corners are shared among cells � count as 1 atom inside cell• Each of the 6 atoms on the faces are shared among 2 cells � count as 3 atoms inside cell⇒ Total number inside the cell = 4 + 1 + 3 = 8888
• Cell volume: Cell volume: Cell volume: Cell volume:a = 5.431a = 5.431a = 5.431a = 5.431ÅÅÅÅ (.543 nm)3 = 1.6 x 10-22 cm3
• Density of silicon atoms Density of silicon atoms Density of silicon atoms Density of silicon atoms = (8 atoms) / (cell volume) = 5 x 105 x 105 x 105 x 1022222222 atoms/cm atoms/cm atoms/cm atoms/cm3333
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Low Miller Index Planes Diamond Lattice in Low Miller Index Planes Diamond Lattice in Low Miller Index Planes Diamond Lattice in Low Miller Index Planes Diamond Lattice in Low Miller Index Planes Diamond Lattice in Low Miller Index Planes Diamond Lattice in Low Miller Index Planes Diamond Lattice in Low Miller Index Planes Diamond Lattice in Diamond LatticeDiamond LatticeDiamond LatticeDiamond LatticeDiamond LatticeDiamond LatticeDiamond LatticeDiamond Lattice
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Unit cell:Unit cell:Unit cell:Unit cell:
View in <110> directionView in <110> directionView in <110> directionView in <110> direction
View in <111> directionView in <111> directionView in <111> directionView in <111> direction
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Crystalline plane in IC industryCrystalline plane in IC industryCrystalline plane in IC industryCrystalline plane in IC industry
>= 8 inch wafer
Notch: P type, (100)Notch: P type, (100)Notch: P type, (100)Notch: P type, (100)Notch: P type, (100)Notch: P type, (100)Notch: P type, (100)Notch: P type, (100)
Flat: <8inch wafer
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Comparisons on Various Cubic LatticeComparisons on Various Cubic LatticeComparisons on Various Cubic LatticeComparisons on Various Cubic Lattice
Lattice Parameters Simple CubicBody CenterCubic (BCC)
Face CenterCubic (FCC)
Diamond
Cube edge length (a) 2R 4R/√3 2√2*R 8R/√3Atom Radius® a/2 √3/4a √2/4a √3/8aCoordination number (N) 6 8 12 4
Number of atoms per unit cell 1 2 4 8
Atomic packing factor(APF) π/6=52% π√3/8=68% π√2/6=74% π√3/16=34%
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Preparation of Single Crystal Si WaferPreparation of Single Crystal Si WaferPreparation of Single Crystal Si WaferPreparation of Single Crystal Si Wafer
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Procedures from Procedures from Procedures from Procedures from Quartzite Quartzite Quartzite Quartzite Sand Sand Sand Sand to Silicon Waferto Silicon Waferto Silicon Waferto Silicon Wafer
QuartziteQuartziteQuartziteQuartziteQuartziteQuartziteQuartziteQuartziteSandSandSandSandSandSandSandSand
MGS Poly-SiMGS Poly-SiMGS Poly-SiMGS Poly-SiMGS Poly-SiMGS Poly-SiMGS Poly-SiMGS Poly-Si(98~99%)(98~99%)(98~99%)(98~99%)(98~99%)(98~99%)(98~99%)(98~99%)
EGS Poly-SiEGS Poly-SiEGS Poly-SiEGS Poly-SiEGS Poly-SiEGS Poly-SiEGS Poly-SiEGS Poly-Si(99.9999999(99.9999999(99.9999999(99.9999999(99.9999999(99.9999999(99.9999999(99.99999999999999999999999%) (%) (%) (%) (%) (%) (%) (%) (1111111111111111-9)-9)-9)-9)-9)-9)-9)-9)
Single-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSilicon Silicon Silicon Silicon Silicon Silicon Silicon Silicon BouleBouleBouleBouleBouleBouleBouleBoule
Single-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSingle-CrystalSiliconSiliconSiliconSiliconSiliconSiliconSiliconSilicon WaferWaferWaferWaferWaferWaferWaferWafer
Poly-Si MetallurgyPoly-Si MetallurgyPoly-Si MetallurgyPoly-Si Metallurgy Poly-Si Purification Poly-Si Purification Poly-Si Purification Poly-Si Purification
Preparation Preparation Preparation Preparation Of Single-crystalOf Single-crystalOf Single-crystalOf Single-crystalSilicon IngotSilicon IngotSilicon IngotSilicon Ingot
Preparation of Silicon Wafer Preparation of Silicon Wafer Preparation of Silicon Wafer Preparation of Silicon Wafer
* MGS: Metallurgy Grade Silicon EGS: Electronic Grade Silicon
Polished WaferPolished WaferPolished WaferPolished WaferPolished WaferPolished WaferPolished WaferPolished Wafer
Annealed WaferAnnealed WaferAnnealed WaferAnnealed WaferAnnealed WaferAnnealed WaferAnnealed WaferAnnealed Wafer
Epitaxy WaferEpitaxy WaferEpitaxy WaferEpitaxy WaferEpitaxy WaferEpitaxy WaferEpitaxy WaferEpitaxy Wafer
SOI WaferSOI WaferSOI WaferSOI WaferSOI WaferSOI WaferSOI WaferSOI Wafer
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
SiO2 Sand SiO2 Sand SiO2 Sand SiO2 Sand ����Poly-SiPoly-SiPoly-SiPoly-Si
SiO2 Sand SiO2 Sand SiO2 Sand SiO2 Sand ���� MGS Poly-Si (Natural Si) MGS Poly-Si (Natural Si) MGS Poly-Si (Natural Si) MGS Poly-Si (Natural Si)
SiO2 + 2C Si + 2CO2000℃
Sand coal 98~99% poly-SiSand coal 98~99% poly-SiSand coal 98~99% poly-SiSand coal 98~99% poly-SiSand coal 98~99% poly-SiSand coal 98~99% poly-SiSand coal 98~99% poly-SiSand coal 98~99% poly-Si
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Purification of Poly-SiPurification of Poly-SiPurification of Poly-SiPurification of Poly-SiPurification of natural silicion (MGS Poly-Si Purification of natural silicion (MGS Poly-Si Purification of natural silicion (MGS Poly-Si Purification of natural silicion (MGS Poly-Si ���� MGS Poly-Si) MGS Poly-Si) MGS Poly-Si) MGS Poly-Si)
Purification(Distillation)
Si + HCl � SiHCl3
HCl gas
MGS-Sipowder
Filter Filter
Condenser
Reactor
99.9999999% liquidSiHCl3 (TCS)
SiHClSiHClSiHClSiHClSiHClSiHClSiHClSiHCl33333333 +H +H +H +H +H +H +H +H22222222 �������� EGS-Si + HCl EGS-Si + HCl EGS-Si + HCl EGS-Si + HCl EGS-Si + HCl EGS-Si + HCl EGS-Si + HCl EGS-Si + HCl
H2
Liquid SiHCl3
H2+ SiHCl3
EGS-Si Reactor
Poly-Si (s)+ 3HCl (g) SiHCl3 (g) +H2 (g)1200~
MGS SiMGS SiMGS SiMGS SiMGS SiMGS SiMGS SiMGS Si TCS (g)TCS (g)TCS (g)TCS (g)TCS (g)TCS (g)TCS (g)TCS (g)
SiHCl3 (l)CondensingDistillation
TCS (l)TCS (l)TCS (l)TCS (l)TCS (l)TCS (l)TCS (l)TCS (l) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%)
SiHCl3 (l) +H2 (g) Poly-Si (s)+ 3HCl (g)1100C
EEEEEEEEGS SiGS SiGS SiGS SiGS SiGS SiGS SiGS SiTCS (l)TCS (l)TCS (l)TCS (l)TCS (l)TCS (l)TCS (l)TCS (l)
(99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%) (99.999999999%)
1300C
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Growth of Single-crystal SiliconGrowth of Single-crystal SiliconGrowth of Single-crystal SiliconGrowth of Single-crystal Silicon--CZ Growth (1)--CZ Growth (1)--CZ Growth (1)--CZ Growth (1)
Czochralski growth (CZ)Czochralski growth (CZ)Czochralski growth (CZ)Czochralski growth (CZ)Quality control of CZ process
Oi (oxygen concentration) (BMD: oxygen precipitation: density) � Magnetic Field(0.3T) to ionize purity and let them far away S-L surface. ResistivityCOP (As-grown vacancy)Crystal orientation
Single-crystal silicon seed:Size: Φ0.5cm * L 10cmCarefully crystalline orientation
such as (100), (111).
Silicon Melt:Material: EGS Poly-SiTemperature: 1415~1500CPrevention gas: Ar.
Single-crystalSilicon Boule
Silicon Seed
HeatingCoil
Silicon Melt(EGS-Si)
1415C~1500C
Graphite Crucible
Quartz Crucible
PullAr
Neck
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
Growth of Single-crystal Silicon--CZ Growth (2)
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
SummarySummarySummarySummaryConductivity of semiconductorSemiconductor materials: element semi, compound semiTypes of solid: amorphous, single crystal, polycrystalline.Crystal lattice, Unite cell (simple cubic, BCC, FCC)
Miller indices are used to designate planes and directions within a crystalline lattice
Si: diamond lattice; Atoms are formed in a tetrahedral configuration with four nearest-neighbor atoms. Crystalline Si:Crystalline Si:Crystalline Si:Crystalline Si:
4 valence electrons per atomdiamond lattice: each atom has 4 nearest neighbors (two sets of fcc coupled)5 x 1022 atoms/cm3
GaAs: Zincblende lattice.Some lattice parameters’ calculation.
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HomeworkHomeworkHomeworkHomework
P14 1.3, 1.5, 1.6, 1.7 (a,g), 1.8 (a,g), 1.13P14 1.3, 1.5, 1.6, 1.7 (a,g), 1.8 (a,g), 1.13P14 1.3, 1.5, 1.6, 1.7 (a,g), 1.8 (a,g), 1.13P14 1.3, 1.5, 1.6, 1.7 (a,g), 1.8 (a,g), 1.13You must hand-in it to TA before next course You must hand-in it to TA before next course You must hand-in it to TA before next course You must hand-in it to TA before next course teaching. teaching. teaching. teaching.
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Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰
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