Chapter 2 Bipolar Junction Transistor

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Chapter 2

Bipolar Junction Transistor _____________________________________________

2.0 History The name bipolar is used because both types of carriers namely hole and electron are used in the transistor, as opposed to field effect transistor, which is considered a unipolar device.

Transistor was invented by J. Bardeen (1908 - 1987), W. Shockley (1910- 1989), and W. Brattain (1902 - 1987) in 1948. Fig. 2.1 shows the picture of three transistor inventors. In 1950 the junction transistor was made using molten germanium. The bipolar transistors produced in 1950s were typically made with alloyed junction.

The planar technology developed around 1960 started to use silicon as the semiconductor material. Today bipolar junction transistor enjoys a large market but they have been challenged by MOSFETs because of cost, yield, power, miniaturization, and etc.

Figure 2.1: Inventors of transistor John Bardeen, William Shockley, and Walter Brattain (left to right)

Figure 2.2 shows the picture of first transistor made by three mentioned inventors.

2 Bipolar Junction Transistor

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Figure 2.2: First transistor built in 1948

In 1999, a vertical replacement gate transistor of 50 nm thick was invented by scientist in Lucent laboratory. Figure 2.3 shows the picture of the Lucent Transistor. There was other smaller transistor reported during that time by research laboratory of a university in Ohio State.

Figure 2.3: 50nm transistor built by Lucent Laboratory

Transistors both bipolar and field effect type, are a three terminal semiconductor device used primarily for signal amplification and switching. It is also formed the fundamental element for integrated circuit design such as the VLSI microprocessor.

Bipolar junction transistor can be divided into two types namely npn and pnp.


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Field effect transistor FET may be broadly divided into JFET, MESFET, MODFET, and MOSFET, where MOSFET can further be divided into depletion-enhancement type and enhancement type. In today's VLSI design, complimentary MOSFETs are used to reduce power consumption and fast switching application.

2.1 Bipolar Junction Transistor Bipolar junction transistor BJT can be viewed as two pn junctions connected back to back to form np-pn or pn-np structures namely as npn or pnp transistors. Figure 2.4 illustrates the structure showing two pn junctions.

Figure 2.4: The structure of a transistor showing two pn junctions

Bipolar junction transistor is manufactured in miniature formed by the fabrication process, which involved oxidation, photolithography, etching, deposition, ion implantation, diffusion, chemical/mechanical polishing processes, metallization, and etc.

Like pn junction, the current components of BJT come from two carrier types, which are the hole and electron. This is also the reason why the transistor is called bipolar junction transistor.

The current components are diffusion hole, diffusion electron, drift hole, and drift electron, which are illustrated in Fig. 2.5.


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Figure 2.5: It illustrates the current components of a p+np transistor

2.1.1 Design Concept of Bipolar Junction TransistorBipolar junction transistor has three terminals. One terminal is used to inject carrier name as emitter E, one is used to control the passage of the carrier named as base B, and one is used to collect the carrier named as collector C.

Traditional way of designing a bipolar junction transistor is designed in such that the doping concentration of its emitter is higher than the doping concentration of the base and collector. The order of doping concentration is highest for emitter 1018cm-3, followed by collector 1017cm-3 and then base 1016cm-3. To ensure almost 100% of the injected carrier from emitter is collected by collector, the diffusion carriers have to out number the diffusion carriers of base and to out number recombination of carrier in the base.

The base is also designed to be much shorter than the diffusion length Ln or Lp of the minority carriers. This is used to minimize the chance of recombination of minority carrier with majority carrier in the base.

Bipolar junction transistor that meets the design concept would have high emitter efficiency and high current gain beta value.

2.1.2 Type of Bipolar Junction Transistor Bipolar junction transistor can be divided into two types namely npn and pnptypes which have their structures shown in Fig. 2.6.


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Figure 2.6: Structure of pnp and npn transistor

2.1.3 Symbol of Bipolar Junction Transistor

The symbols of npn and pnp bipolar junction transistors are shown in Fig. 2.7. The terminal with arrow sign signifies the emitter side. The tail of the arrow shows the p-type, whilst the head of arrow shows the n-type.

(a) npn transistor (b) pnp transistor

Figure 2.7: Symbol of npn and pnp bipolar junction transistor

2.1.4 Power the Bipolar Junction Transistor In normal operation of BJT, the emitter-to-base junction of the bipolar junction transistor is always forward biased. The collector-to-base is always reverse-biased.

Figure 2.8: Voltage bias configuration of pnp transistor


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The corresponding energy band diagram of a pnp bipolar junction transistor is shown in Fig. 2.9.

Figure 2.9: Energy band diagram of pnp transistor under voltage bias

2.1.5 dc Operation Mode of Bipolar Junction Transistor

Figure 2.10 shows the current components of a bipolar junction transistor under normal bias.

Figure 2.10: Biasing configuration of pnp transistor

There are three current types flowing in bipolar junction transistor. There are collector current IC, emitter current IE, and and base current IB.

By Kirchhoff's Current Law KCL,

IE = IB + IC (2.1)

There is a small portion of the injected carrier recombines with majority carrier in the base to form part of the base current. Thus, the emitter current IE is equal to (IC + IB).


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The ratio of collector current to emitter current is called , which is also named as h-parameter hFB. This parameter is commonly known as common base gain.

= IC/IE (2.2)

The typical value of ranges from from 0.95 to 0.99. For a good transistor, its value is closed to one.

The ratio of collector current to base current is , which also denoted as h-parameter-hFE. This parameter is commonly known as common emitter gain.

= IC/IB (2.3) The typical range value of is between 20 to 500.

Substitute equation (2.1) into equation (2.3), it yields

IE = IB( + 1) (2.4) The relationship of and parameters shall be

= /(1 - ) or

= /( + 1) (2.5) Example 2.1 A transistor has IB = 0.08mA and IE = 9.60mA. Determine its collector current IC, , and . Solution

IC = IE - IB = 9.60mA - 0.08mA = 9.52mA

= 9.52mA/9.60mA= 0.9917

= 9.52mA/0.08mA = 119


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or

= /(1-) = 0.9917/0.0083 = 119

2.1.6 Characteristics of Beta The beta of transistor increases as the junction temperature of BJT increases. Thus, it will affect the quiescent Q-point of the transistor. However, if the BJT is properly biased, the effect is insignificant.

The basic reason for the increase is due to increase of electron-hole pair EHP at higher temperature as compared to lower temperature.

2.1.7 Reversed Bias Mode of Bipolar Junction Transistor

When the transistor is in reverse-biased mode, there are leakage currents, which can be measured. They are minority currents, which are drift currents in the collector-to-emitter and collector-to-base junctions. In engineering sense, they are referred as leakage currents.

Two types of leakage current namely ICBO at open emitter mode and ICEO at open base mode are of interest because it affects the operating Q-point of the transistor as the operating temperature increases. In the industrial analogue circuit design, ICEO and ICBO values are normally considered as very small in nanoampere range, which can be ignored.

Figure 2.11 shows the set up to measure ICBO with emitter left open i.e. IC = ICBO.

Figure 2.11: ICBO measurement


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Figure 2.12 shows the set up to measure ICEO current with base open i.e. IC = ICEO.

Figure 2.12: ICEO measurement

Taking into account ICEO and ICBO, the real (real) and (real) parameters shall be re-calculated.

Figure 2.13: It illustrates the ICBO and ICEO leakage current components

IC = IC(real) +ICBO (2.6)

(real) = (IC-ICBO)/IE (2.7)

IC = (real)IE + ICBO (2.8)

IB = IE-((real)IE + ICBO) (2.9)

Since 1+

= ,


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IB = 1IE+ - ICBO (2.10)

(real) = CBOB

CBOC

IIII

+

(2.11)

IC = (real)IB +ICBO(+1) (2.12) In open base condition, the collector current IC is

IC = IE + ICEO (2.13)

Thus, the open base collector-to-emitter current ICEO is

ICEO = ICBO(+1) (2.14) Note that ICEO value in equation (2.14) is indeed the cutoff base current of a bipolar junction transistor.

Example 2.2 A silicon bipolar junction transistor has = 100 and ICBO of 0.01A. Calculate the value of , IC and IB assuming IE = 1mA.

Solution

99.0101100

1==

+

=

IC = IE + ICBO = 0.99(1mA) + 0.01A = 0.99001 mA IB = 1

IE+ - ICBO

= 1mA/101 - 0.01A = 9.89A

2.1.8 Collector Characteristic Curves

By fixing the base current IB and varying the VCC voltage and knowing value, the characteristic curve of collector current IC versus collector-to-emitter voltage VCE can be plotted as shown in Fig. 2.14. By changing the value of base current


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IB, a new collector characteristic curve can be obtained by varying the collector-to-emitter voltage VCE and measuring the collector current IC.

When base current is zero i.e. IB = 0, the transistor is said to be at cutoff. When base current is increased, the collector current IC is also increased, and collector-to-emitter voltage VCE is decreased. VCE will decrese until it is equal to VCE(sat), which is approxiamtely equal to 0.1 ~ 0.2V. At this condition, the transistor is saturated because IC will not increase any further and base-to-collector junction becomes forward bias (equation (2.19); VCB = VCE - VBE). In this condition, the current gain formula will not follow.

Note also that at cutoff, VCE is almost equal to VCC and likewise at saturation, collector-to-emitter voltage is almost zero. i.e.VCE 0V.

Figure 2.14: Collector characteristic curves

2.2 dc Configuration of Bipolar Junction TransistorThere are three biasing configurations for the bipolar junction transistor. They are common-base, common-emitter, and common-collector configurations. We shall study each of the configurations in details.


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2.2.1 Common-Base CB Configuration

The transistor is connected with base as common ground terminal as shown in Fig. 2.15 is called common-base configuration. The current gain is , which is the ratio of collector current and emitter current IC/IE. The input is at emitter terminal, whilst the output is at collector terminal.

Figure 2.15: Common-base CB configuration

2.2.2 Common-Emitter CE Configuration

The transistor is connected with emitter as the common or ground is called common-emitter configuration as shown in Fig. 2.16.

Figure 2.16: Common-emitter configuration

The current gain of this configuration is , which is the ratio of collector current IC and base current IB. is also called as static forward transfer current ratio hfe. The input is at base terminal, whilst the output is at collector terminal.


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2.2.2.1 dc Analysis

Reference to common-emitter configuration shown Fig. 2.17, there are three currents and three voltages, which are base current IB, emitter current IE, collector current IC, base-to-emitter voltage VBE, collector-to-base voltage VCB, and collector-to-emitter voltage VCE. For any other dc biasing configuration, there always have these currents and voltages.

Figure 2.17: Common-emitter current and voltage

At room temperature 250C, the base-to-emitter voltage VBE is approximately equal to 0.7V, which is the forward voltage drop of a diode.

The voltage across base resistor RB BRV is

BRV = VBB-VBE (2.15)

Therefore, the base current IB is

B

BEBBB R

VVI = (2.16)

Knowing the beta value, using equation (2.2) and (2.3), collector current IC and emitter current IE can be determined.

The voltage drop across collector resistor RC is CRV , which is


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CCR RIV C = (2.17)

The voltage drop across collector and emitter VCE shall then equal to

VCE = VCC - ICRC (2.18)

The voltage drops across collector and base shall follow equation (2.19), which is

VCB = VCE - VBE (2.19)

Example 2.3Determine if the transistor shown in circuit is in saturation. Assume that VCE(Sat)is small enough to be neglected.

Solution The collector saturation current is mA10

k1V10

RVV

IC

)sat(CECC)sat(C =

=

= . If IB is large

enough to produce IC(sat) then the base current IB is mA23.0

k10V3.2

RV7.0VI

B

BBB =

=

= .

The collector current is IC = IB = (50)(0.23mA) = 11.5mA. This shows that with the specified , this base current is capable of producing the collector current IC greater than IC(sat). Since the transistor is saturated, the collector current value of 11.5mA is never attained.


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2.2.3 Common-Collector CC Configuration

The transistor is connected with collector as the common is called common-collector configuration as shown in Fig. 2.18.

Figure 2.18: Common-collector configuration

The current gain is +1 since BCE III += . This shall mean that emitter current is IE = IB( + 1). The input is at base terminal, whilst the output is at emitter terminal.

2.2.3.1 dc Analysis

The current and voltage shown in Fig. 2.19 depend on the transistor characteristics and external circuit values.

Figure 2.19: Currents and voltage of common collector configuration

The voltage at base is VBB. The voltage at emitter VE is (VBB-VBE), where VBE = 0.7V for silicon at room temperature. Thus, the emitter current IE is


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E

EE R

VI = (2.20)

E

BEBBE R

VVI = (2.21)

Since emitter current is BCE III += and beta is = IC/IB

1II EB += (2.22)

The collector-to-emitter voltage VCE is

VCE = VCC - VE VCE = VCC - IERE (2.23)

The collector-to-base voltage VCB is

VCB = VCC - VE - VBE (2.24)

Example 2.4 Determine current IB, IC, IE and voltage at each transistor terminal with respect to ground and VCE voltage in the figure. = 200.

Solution Emitter current is mA93.0

k10V7.0V10

RVVI

E

BEBBE =

=

=


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IC = IE 1+

= 0.925mA

A43.4201

mA93.01

II EB ==+=

VC = VCC = 20V and VB = VBB = 10V

VE = IERE = (0.93mA)(10k) = 9.3V VB = 9.2V + 0.7V = 10V. VCE = 20V - 9.3V = 10.7V

2.3 dc Operating Point

The dc operating point is referred to Q-point (quiescent point). It is a point on the transistor characteristic curve. If one chooses collector current IC versus collector-to-emitter voltageVCE characteristics curve then Q-point is the point on the curve determined by collector current IC and collector-to-emitter voltageVCEfor a fixed value of base current IB derived from the biasing of circuit. Using the transistor biasing circuit shown in Fig. 2.20, the Q-point on the characteristics curve can be determined by finding the values of IC and VCE for a given base current IB determined by the circuit. The line joining the Q-point is known as dc load line.

(a) Bias circuit (b) Characteristic curve Figure 2.20: (a) Biasing circuit for determining Q-point and (b) showing Q-point and dc load

line

If there is a sine wave of amplitude 1.0V superimposed on base voltage VBB as shown in Fig. 2.21 The base current IB varies 100.0A above and 100.0A


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below the Q-point. The collector current IC will vary between 20.0mA to 40.0mA, which is 10.0mA above and below Q-point of 30.0mA. The collector-to-emitter voltage VCE will vary from 2.0V to 6.0V as shown in Fig. 2.22, which is 2.0V above and below Q-point of 4.0V.

Figure 2.21: It shows the transitor with ac signal superimposed on dc

Figure 2.22: It shows the transistor dc load line


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2.3.1 Distortion of Output

The location of Q-point can cause distortion of the output and it determines the maximum input voltage. The output signal is clipped if the input is driven into either saturation or cutoff area. Fig. 2.23 illustrates the conditions of output distortion.

(a) Driven in saturation (b) Driven into cutoff

(c) Driven both into saturation and cutoff Figure 2.23: Conditions of output distortion

Example 2.5 Determine the Q-point for circuit shown in the figure and the peak value of base current for linear operation. Given that the beta value of the npn transistor is 200.


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Solution Q-point is defined by collector current IC and collector-to-emitter voltage VCEon the output characteristic curve. The base current is

A186k50

V7.0V10R

VVIB

BEBBB =

=

= and the collector current IC is

IC = IB = 200x186A = 37.2mA. The collector-to-emitter voltage VCE is VCE = VCC - ICRC = 20V - 37.2 mA(300) = 20V - 11.6V = 8.84V

Thus, first Q-point is at IC = 37.2mA and VCE = 8.8V for IB = 186.0A

The next Q-point shall be determined at saturation. IC at this point is

IC(sat) = VCC/RC = 20V/300 = 66.7 mA

Now a dc load line can be drawn as shown in the figure. From the graph, VCE at cutoff is found to be 20.0V.


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From the graph, the operating IC range is 37.2mA 29.5mA. Thus, the peak base current IB value is Ib(peak) = 29.5mA/200 = 147.5A.

2.4 dc Biasing a Transistor Amplifier

The purpose of dc bias is to make transistor to work as amplifier or alternative one can say to keep the transistor alive. All three terminals of the bipolar junction transistor must be biased. Showing here is the most common type of dc biasing for transistor, which are base bias, emitter bias, voltage-divider bias, and collector feedback bias. The constant curent bias shall also be discussed briefly.

dc analysis and the effect of temperature for each biasing type shall be discussed detail. The advantage and disadvantage of each bised type shall also be discussed.

2.4.1 Base Bias

Circuit in Fig. 2.24 illustrates the base biasing of a bipolar junction transistor. The base of the bipolar junction transistor is biased using VCC voltage instead of a separated voltage.


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Figure 2.24: Base bias circuit of bipolar junction transistor

2.4.1.1 dc Analysis

The voltage drop across base resistor RB is (VCC -VBE).

Therefore, base current IB is

IB = (VCC - VBE)/RB (2.25)

Also collector-to-emitter voltage is

VCE = VCC - RCIB (2.26) From the above dc analysis, it shows that collector-to-emitter voltage VCE is dependent on parameter. Since beta increases with temperature, it shall mean that collector current IC will also increase. Increase of collector current reduces collector-to-emitter voltage VCE. Thus, it affects the Q-point.

Based on the analysis, the bipolar junction transistor baised with base bias technique is not a good biasing technique unless the operating temperature can be kept constant.

2.4.2 Emitter Bias

Emitter bias of bipolar junction transistor is shown in Fig. 2.25. The emitter is normally biased.


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Figure 2.25: Emitter biasing circuit

2.4.2.1 dcAnalysis

At base-emitter loop,

IBRB + VBE + IERE = VEE (2.27)

(IC/)RB+ VBE + + 1 ICRE = VEE

Thus, the collector current IC is

++

=

/R/)1(RVVI

BE

BEEEC (2.28)

Since RB/ is small as compared to RE and ( + 1)/ 1, the effect of collector current IC with temperature is minimum. Thus, emitter bias is a good biasing technique for linear circuit design. The collector voltage VC is

VC = VCC - ICRC (2.29)

and collector-to-emitter voltage VCE is


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VCE = VC -VE (2.30)

Example 2.6 Determine how much the Q-point of the circuit shown in the figure will change over temperature where increases from 50 to 100 and VBE decreases from 0.7V to 0.6V.

Solution For = 50 and VBE = 0.7V

++

=

/R/)1(RVVI

BE

BEEEC

=

50/k10)50/51(k10V7.0V20

+

= 1.86mA

VC = VCC - ICRC = 20V - (1.86mA)(5k) = 10.72V

Therefore, the emitter voltage VE is

VE = -1.86mA/50x10k - 0.7V = -1.072V

and the collector-to-emitter voltage is


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VCE = VC -VE = 10.72V - (-1.072V) = 11.79V

For = 100 and VBE = 0.6V

++

=

/R/)1(RVVI

BE

BEEEC

=

100/k10)100/101(k10V6.0V20

+

= 1.90mA

VC = VCC - ICRC = 20V - (1.90mA)(5k) = 10.49V

Therefore, the emitter voltage and collector-to-emitter voltage are

VE = -1.90mA/100x10k- 0.6V = -0.79V VCE = VC -VE = 10.49V - (-0.79V) = 11.28V

The % change in collector current IC as changes from 50 to 100 is

IC = %15.2%100xmA86.1

mA86.1mA90.1=

The % change in collector-to-emitter voltage VCE is

VCE = %32.4%100xV79.11V28.11V79.11

=

From the results, one can conclude that the emitter bias circuit is a good way to stabilize Q-point due to change of caused by temperature.

2.4.3 Voltage-Divider Bias

Voltage-divider bias is the most widely used technique for linear circuit design. The base voltage VB is biased based on device circuit shown in Fig. 2.26.


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Figure 2.26: Voltage-Divider bias circuit

If the base current IB is very small as compared to current I2 flows in R2, then the divider circuit can be simplied and depends on R1 and R2. Otherwise, the input resistance RIN(base) at the base needs to take into consideration.

Figure 2.27: (a) Divider circuit without input resistance and (b) with input resistance


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The input resistance of base RIN(base) is defined as RIN(base) = (+1)RE as shown in in Fig. 2.27. In most cases, RIN(base) is very large as compared to R2. Thus, it can be ignored in the calculation. Since (+1) , then (+1)RE RE

From Thvenin's theorem, an equivalent base-to-emitter circuit is shown in Fig. 2.28 and its dc model circuit is shown in Fig. 2.29. The dc model can be used for the case where RIN(base) is considered as part of input and also the base current is not assumed to be zero.

Figure 2.28: Thvenin's equivalent circuit of base-to-emitter circuit

Figure 2.29: dc model circuit of voltage divider amplifier


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2.4.3.1 dc Analysis

Consider circuit shown in Fig. 2.30, the base voltage VB at point A is equal to

CCE21

E2B V}R)1(||R{R

R)1(||RV++

+= (2.31)

If term (+1)RE >> R2 then the base voltage is approximately equal to

CC21

2B VRR

RV+

(2.32)

Knowing base voltage is VB and emitter voltage is VE = VB - VBE, the emitter current is equal to

E

BEBE R

VVI = (2.33)

Since collector current is IC = IE and emitter voltage is VE = IERE, the collector-to-emitter voltage VCE is equal to

VCE = VCC - ICRC - IERE = VCC - IE(RC + RE) (2.34)

Usually the value of input base resistance RIN(base) = ( + 1)RE is much larger as compared to R2. Therefore, Q-point is only slightly effected by , which is temperature dependent.

Example 2.7 Using the circuit shown in the figure, determine the values of base voltage VBand emitter current IE.

If the transistor is replaced with one that has = 250, what is the change of base voltage VB?


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Solution In this example, RIN(base) cannot be ignored since it involves parameter. RIN(base) = 51(1k) = 51k

VB = VCCR||RRR||R

)base(IN21

)base(IN2

+

= V10k51||k50k100

k51||k50+

= 2.01V

IE = (VB-VBE)/RE = (2.01V- 0.7V)/1k = 1.31mA

If beta increases to 250, input base reistance RIN(base) is 251k and base votlage VB is

VB = V10k251||k50k100k251||k50

+

= 2.94V

Base voltage VB increases from 2.01V to 2.94V.


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2.4.4 Collector Feedback Bias

The circuit of collector feedback bias or voltage feedback bias is shown in Fig. 2.30. It provides base-to-emitter bias. This circuit is good to stablize the effect on Q-point caused by temperature.

Figure 2.30: Collector feedback bias

2.4.4.1 dc Analysis

The base current IB is

B

BECB R

VVI = (2.35)

The collector-to-emitter voltage VCE is

VCE = VC = VCC (IC+IB)RC VCC - ICRC (2.36)

Also the base current IB is equal to

B

BECCCCB R

VRIVI =

But IB = IC/, thus,


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B

BECCCCC

RVRIVI

=

+

=

/RRVVIBC

BECCC (2.37)

Normally the value of RB/ is small as compared to RC. Thus, collector current IC is fairly independent of .

2.4.5 Biasing Using Current Source

Current source biasing has advantage because emitter current is independent of RB resistance and value of the transistor as shown in Fig. 2.31(a). Thus, RBcan be made as large as possible to increase the input impedance without disturbing the stability of the bias. Current source also leads to significant design simplification. It keeps the collector voltage at point V greater than voltage at base (-VEE + VBE). The circuit in Fig. 2.31(b) has the current ratio I/IREF which is depending on the design aspect ratio (A/b) of the transistor Q1and Q2. Thus, the relationship

1Qb

2QbREF )/A(

)/A(I/I

= =

1

2

is established. If transistor

Q1 and Q2 have same design geometry then I is a replica or mirror of current reference IREF. Thus it is also called the current mirror, a name that is used irrespective of the ratio of device dimenison.

IREF = RV)V(V BEEECC

(2.38)

IREF is also equal to the sum of collector current IC flows in transistor Q1 and the base current flows in both transistors. Thus,

IREF = IC + 2IB

also

IREF = IC +2IC/

and IC = I, therefore, current I = 2+

x IREF for transistor Q1 and Q2 that have same value.


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(a) Basic current source (b) Current mirror Figure 2.31: Bipolar transistor biased using current source

2.5 Output Impedance roWith reference to Fig. 2.14, we assume that the output impedance ro of the bipolar junction transistor is infinite at amplification region. Thus, we ignore roat the gain calculation. In reality the output impedance of the transistor for a specified IB current is depending on the Early voltage VA and the collector current IC. This is illustrated in Fig. 2.32. Thus, the output impedance of the

transistor is ro = C

CEA

IVV +

C

A

IV

.

At saturation and upon further increase VCE voltage, the depletion thickness at collector-to-base region increases in such that the effective width W of the base is reduced. This causes an increase of minority carrier, which is the source of reversed saturation current IS. Knowing that IS is inversely proportional to W and IC = IS TBE V/Ve , thus there is an increase of IC current.


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Figure 2.32: The figure shows that the output resistance rO has finite value

2.5 Transistor As a Switch In digital electronic, transistor is configured as a switch that operates between cutoff and saturation regions. Consider an npn bipolar junction transistor circuit shown in Fig. 2.33. If the input voltage Vin is equal to VCC and the ratio of the base resistance to collector resistance RB/RC or the ratio of collector current to base current IC/IB is less than value, then the transistor is be driven into saturation. Likewise, if the input voltage Vin is less than the base-to-emitter voltage VBE of 0.7V, the transistor will be at cutoff. Under these conditions, the transistor acts like an inverter switch.

From circuit shown in Fig. 2.33, base current IB is equal to IB =

B

BEin

R)VV( . However, at saturation collector current IC is equal to IC = VCC/RC.

Knowing that IC = IB, thus, the result of RB/RC at saturation is equal to

=

CC

BEin

C

B

VVV

RR

. If Vin = VCC, then

CC

BECC

VVV is less than one. This shall

mean that ratio of RB/RC is less than for a transistor to operate as a switch. This result infers that the ratio of IC/IB current is less than for a bipolar junction transistor to work as switch.


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Figure 2.33: An npn bipolar junction transistor used as an inverter switch

Tutorials

2.1. The majority carrier in base region of an npn transistor is _________________.

2.2. Explain the purpose of a thin, lightly doped base and a heavily doped emitter.

2.3. Why collector current IC is less than emitter current IE?

2.4. Discuss how the base-emitter terminal and collector-emitter terminal of a bipolar junction transistor should be biased for normal functioning.

2.5. A base current of 50A is applied to a transistor in figure below and a voltage of 5V is dropped across resistor RC. Determine and for the transistor.


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2.6. Find VCE, VBE, and VCB of the transistor shown in figure below. Deduce whether or not the transistor is saturated.

2.7. Calculate the VCE(max) and IC(sat) for the amplifier shown in figure below and draw its dc load line. What is the ac range can be applied at the base without distortion given that = 100?


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2.8. Refers to circuit of Q2.7, if you need IB to be 10.0A, what will be the values of VBB and the Q-point of this amplifier? You may take and = 100.

2.9. Among the dc biasing circuits for transistor that you have learnt, name the one that its Q-point will be greatly affected by temp.variation. State the reason.

References

1. Theodore F. Bogart Jr., Jeffrey S. Beasley, and Guillermo Rico, Electronic Devices and Circuit, sixth edition, Prentice Hall, 2004.

2. Thomas L. Floyd, "Electronic Devices", Prentice Hall International, Inc.,1999.

3. Adel S. Sedra and Kenneth C. Smith, "Microelectronic Circuits", fourth edition, Oxford University Press, 1998.

4. Robert L. Boylestad, and Louis Nashelsky, Electronic Devices and Circuit Theory, eighth edition, Prentice Hall, 2002.

Chapter 2 Bipolar Junction Transistor

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Transcript of Chapter 2 Bipolar Junction Transistor