Chapter 1 overheads - Georgia Institute of Technologyusers.ece.gatech.edu/cressler/courses/ECE...
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John D. Cressler, ECE 3450 1 1A Chapter 1 Overheads John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
Transcript of Chapter 1 overheads - Georgia Institute of Technologyusers.ece.gatech.edu/cressler/courses/ECE...
John D. Cressler, ECE 3450 1
1A Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 2
1B Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 3
1C Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 4
1D Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 5
1E Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 6
1F Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
n-type
p-type
John D. Cressler, ECE 3450 7
1G Chapter 1 Overheads
after Pierret, Semiconductor Device Fundamentals, 1996
John D. Cressler, ECE 3450 8
1H
after Pierret, Semiconductor Device Fundamentals, 1996
Chapter 1 Overheads
Fermi-Dirac Distribution Function
John D. Cressler, ECE 3450 9
1I
after R. Pierret, Advanced Semiconductor Fundamentals, 1987.
Chapter 1 Overheads
John D. Cressler, ECE 3450 10
1J
after Pierret, Semiconductor Device Fundamentals, 1996
Chapter 1 Overheads
John D. Cressler, ECE 3450
1K Chapter 2 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450
1L Chapter 2 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450
1M
after Pierret, Semiconductor Device Fundamentals, 1996
Chapter 2 Overheads
John D. Cressler, ECE 3450
1N Chapter 2 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450
1O Chapter 2 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 16
1P
after Pierret, Semiconductor Device Fundamentals, 1996
Chapter 1 Overheads
John D. Cressler, ECE 3450
1Q Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450
1R
after Tiwari, Compound Semi. Device Physics, 1992 / after Pierret, Semi. Device Fundamentals, 1996
Chapter 2 Overheads
John D. Cressler, ECE 3450 19
1S
after Pierret, Semiconductor Device Fundamentals, 1996
Chapter 1 Overheads
John D. Cressler, ECE 3450 20
1T
after Dr. Alan Doolittle
Chapter 1 Overheads
Si
GaAs
GaN
John D. Cressler, ECE 3450 21
1U Chapter 1 Overheads
John D. Cressler, ECE 3450 22
1V Chapter 1 Overheads
John D. Cressler, ECE 3450 23
1W
after Pierret, Semiconductor Device Fundamentals, 1996
Chapter 1 Overheads
John D. Cressler, ECE 3450 24
Epitaxy
Importance of lattice mismatch
The lattice constant of the epitaxially grown layer needs to be close to the lattice constant of the substrate wafer. Otherwise the bonds can not stretch far enough and dislocations will result.
1X Chapter 1 Overheads
After Dr. Alan Doolittle
John D. Cressler, ECE 3450 25
1Y Chapter 1 Overheads
Chemical Vapor Deposition
After Dr. Alan Doolittle
John D. Cressler, ECE 3450 26
Commercial Thomas Swan®
MOCVDReactor
1Z Chapter 1 Overheads
After Dr. Alan Doolittle
John D. Cressler, ECE 3450 27
Commercial Veeco®
MBEReactor
1ZA Chapter 1 Overheads
After Dr. Alan Doolittle
John D. Cressler, ECE3450 28
1ZB Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 29
1ZC Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 30
1ZD Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 31
1ZE Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
John D. Cressler, ECE 3450 32
1ZF Chapter 1 Overheads
John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 (© Copyright 2009, All Rights Reserved)
