Challenges for Materials to Support Emerging … for Materials to Support Emerging Research Devices...
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Transcript of Challenges for Materials to Support Emerging … for Materials to Support Emerging Research Devices...
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Challenges for Materials to Support Challenges for Materials to Support Emerging Research DevicesEmerging Research Devices
C. Michael Garner*, James Hutchby+, George Bourianoff*, and Victor Zhirnov+
*Intel CorporationSanta Clara, CA+Semiconductor Research CorporationResearch Triangle, NC
C. Michael Garner*, James C. Michael Garner*, James HutchbyHutchby++, George Bourianoff*, and , George Bourianoff*, and Victor ZhirnovVictor Zhirnov++
*Intel Corporation*Intel CorporationSanta Clara, CASanta Clara, CA++Semiconductor Research Semiconductor Research CorporationCorporationResearch Triangle, NCResearch Triangle, NC
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Key MessagesKey Messages• Silicon Nanotechnology is production reality
and follows Moore’s law• New materials are needed for future
technologies• Materials research is crucial for revolutionary
devicesSynthesisMetrology & CharacterizationModeling
• New materials will require collaboration
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AgendaAgenda
• Moore's Law• Extending CMOS• Revolutionary CMOS• Beyond CMOS• Summary
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Silicon Technology Reaches Silicon Technology Reaches NanoscaleNanoscale
MicronMicron
1000010000
10001000
100100
1010
1010
11
0.10.1
0.010.01
NanoNano--metermeter
NanotechnologyNanotechnology(< 100nm)(< 100nm)
130nm130nm
90nm90nm
70nm70nm50nm50nm
Gate LengthGate Length 65nm65nm
35nm35nm
19701970 19801980 19901990 20002000 20102010 20202020
45nm45nm32nm32nm
22nm22nm
25nm25nm18nm18nm
12nm12nm
0.7X every 2 years
Nominal feature sizeNominal feature size
Source: Intel
MicronMicron
1000010000
10001000
100100
1010
1010
11
0.10.1
0.010.01
NanoNano--metermeter
NanotechnologyNanotechnology(< 100nm)(< 100nm)
130nm130nm
90nm90nm
70nm70nm50nm50nm
Gate LengthGate Length 65nm65nm
35nm35nm
19701970 19801980 19901990 20002000 20102010 20202020
45nm45nm32nm32nm
22nm22nm
25nm25nm18nm18nm
12nm12nm
0.7X every 2 years
Nominal feature sizeNominal feature size
Source: Intel
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IntelIntel’’s Transistor Research ins Transistor Research inDeep Nanotechnology SpaceDeep Nanotechnology Space
65nm process65nm process2005 production2005 production
30nm30nm20nm20nm
45nm process45nm process2007 production2007 production 32nm process32nm process
2009 production 2009 production
15nm15nm
Experimental transistors for future process generationsExperimental transistors for future process generations
22nm process22nm process2011 production 2011 production
10nm10nm
Transistors will be improved for production
Transistors will be improved for Transistors will be improved for productionproduction
Source: IntelSource: Intel
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Nanotechnology Eras Nanotechnology Eras
ReasonablyFamiliar
NanotubesNanowires
ReallyDifferent
2005
11 yrs.
0.001
0.01
0.1
2000 2010 2020
micron
1
10
100
nm
45 nm65 nm
32 nm22 nm
16 nm
11 nm8 nm
Generation
LGATE
Evolutionary CMOS Exotic
Revolutionary CMOS
2003, M. Bohr
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Revolutionary CMOSRevolutionary CMOS
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• Options for sub 20nm technologies• Challenges: Placement and property control
NanomaterialNanomaterial TransistorsTransistors
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1D Revolutionary CMOS Critical 1D Revolutionary CMOS Critical PropertiesProperties
• Critical Synthesis Issues• Critical Materials Properties
Device MaterialDensity of States as manifest in Eg, effective mass & μ
Gate DielectricDielectric constant
• Critical Interface propertiesBand Offset (Work function, fixed charge, trapped charge)No Fermi level pinningLattice constant & coefficient of thermal expansion
Gate
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Characterization & Modeling Characterization & Modeling ChallengesChallenges
• How do you know the material is “good” ??• Measurement of Properties
Structure and composition (nm scale)Electronic properties & interactions with interface materials
• Impurities & Defects• Modeling of Electronic Properties
Density of States, effective mass, EgModels of interfaces, stress effects, etc
New Metrologies & Models Needed!!!!New Metrologies & Models Needed!!!!New Metrologies & Models Needed!!!!
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ExoticExotic……
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Exotic: What are we looking for?Exotic: What are we looking for?• Required characteristics:
ScalabilityPerformanceEnergy efficiencyGainOperational reliability Room temp. operation
• Preferred approach:CMOS process compatibilityCMOS architectural compatibility
Alternative state variables• Spin–electron, nuclear,
photon• Phase • Quantum state• Magnetic flux quanta• Mechanical deformation• Dipole orientation• Molecular state
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Device Operation & Critical PropertiesDevice Operation & Critical Properties
• At least 2 “stable” states• Mechanism to change states
Communication with CMOS: Voltage or ChargeLogic:
Ability to change the states of other identical devicesGain
• Mechanism to read statesAbility of CMOS to read the states (voltage or charge)
• Material properties may limit mechanisms
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Alternate State Variable ExamplesAlternate State Variable Examples
• Molecular State• Electron Spin
Spin Injection in semiconductorsFerromagnetic semiconductors
• Orbitronics (Multiferroics)
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Molecular MaterialsMolecular Materials
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Molecular StateMolecular State
• Fabrication of contacts is challenging• Need better understanding of mechanisms
O2NO2N
NH2NH2
AuAu
SS
AuAu
Critical Material PropertiesTransconductance change -Change in Tunnel distance-Delocallization-Locallization of states-Collective conformational changes-Charge Storage
Critical Material PropertiesTransconductance change -Change in Tunnel distance-Delocallization-Locallization of states-Collective conformational changes-Charge Storage
Critical Interface PropertiesAtomic energy levels in resonance with the molecular energy states-Work Function-Contact material DOS
Critical Interface PropertiesAtomic energy levels in resonance with the molecular energy states-Work Function-Contact material DOS
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Characterization & Modeling Characterization & Modeling ChallengesChallenges
• How do you know you have a “good” device??• Measurement of Properties
Structure & contact interactionElectronic energy levels & interactions with interface materials
• Modeling of Electronic PropertiesDensity of States, effective mass, EgModels of interface electronic interactions Charge storage, excited local states, conduction mechanismsAccurate prediction of energy levels for molecular structures
New Metrology & Models Needed!!!!New Metrology & Models Needed!!!!New Metrology & Models Needed!!!!
O2 N
O2 N
NH
2N
H2
Au
AuSSAu
Au
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SpintronicSpintronic MaterialsMaterials
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Semiconductor Semiconductor SpintronicsSpintronics
Critical Materials PropertiesSemiconductor:•Spin Orbit Coupling (As manifest in spin lifetimes, and diffusion lengths)•g-Factor
Ferromagnetic contact source: •Coercivity
Critical Materials PropertiesSemiconductor:•Spin Orbit Coupling (As manifest in spin lifetimes, and diffusion lengths)•g-Factor
Ferromagnetic contact source: •Coercivity
Interface Critical Properties•Interface Band Structure Matching [energy & symmetry] (as manifest in spin injection efficiency) •No band-bending
Interface Critical Properties•Interface Band Structure Matching [energy & symmetry] (as manifest in spin injection efficiency) •No band-bending
How can we separate materials issues??How can we separate materials issues??
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Ferromagnetic Semiconductor Ferromagnetic Semiconductor SpintronicsSpintronics
Critical Interface Properties•Spin Orbit Coupling as manifest in (Interface Magnetic Anisotropy)•Minimal band bending
Critical Interface Properties•Spin Orbit Coupling as manifest in (Interface Magnetic Anisotropy)•Minimal band bending
Critical Material Properties•Spin Exchange Interaction •Exchange Splitting Energy•T curie•Moment per atom
Critical Material Properties•Spin Exchange Interaction •Exchange Splitting Energy•T curie•Moment per atom
How can we separate materials issues??How can we separate materials issues??
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nm Scale Material Diagnosticsnm Scale Material Diagnostics
• Need new metrology to measure spin properties & interactions at nm scale
Spin polarization, lifetimes, diffusion lengthsSpin interaction with interface band bending, roughness, states Local electric & magnetic fieldsStress interactions with spin lifetimes
hνhν
HH
KPM, MFM, etcKPM, MFM, etc
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Spin Material Modeling NeedsSpin Material Modeling Needs
• Interaction of spin lifetime and diffusion lengths with:
DefectsBand bendingStressInterfacial roughnessInterface states and defectsSpin injection processes
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OrbitronicsOrbitronics & & MultiferroicsMultiferroics
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PerovskitePerovskite MaterialsMaterials
• Ferroelectrics• Ferromagnetics• Multiferroics (Ferroelectric & Ferromagnetic)• Colossal Magnetoresistance• Semiconductors• High-T Superconductors• Promising optical properties• Phononic properties
• Ferroelectrics• Ferromagnetics• Multiferroics (Ferroelectric & Ferromagnetic)• Colossal Magnetoresistance• Semiconductors• High-T Superconductors• Promising optical properties• Phononic properties
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MultiferroicsMultiferroics
• Interplay between charge, orbital, and spin degrees of freedom
• Magnetic field control of ferroelectric polarization
• Switching of magnetic polarization induced by electric fields
H applied
σ
EE
H E
Conceptual Conceptual
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OrbitronicsOrbitronics
• Orbitronics: Perovskite manganese oxidesRBaMn2O6
R=Sm, Eu, Gd, Tb, Dy, Ho, Y
H appliedEE
H E
Conceptual Conceptual
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ChallengesChallenges
• Key PropertiesPiezoelectric, Multiferroic, Colossal MagnetoresistanceStress can interact with multiferroic properties
• Good News: Multiferroic & CMR• Bad News: Piezoelectric (Properties Depend on
stress)• Material unknown
Vacancies, interstitials and impurities can cause local stressHow pure and defect free do the materials need to be?Integration Issues: Coefficient of Thermal Expansion (CTE)
StressStressStressStress Δ EΔ E
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New Metrologies NeededNew Metrologies Needed
• Nanometer characterization of:Piezoelectric propertiesElectro & Magneto-optical propertiesFerroelectric and Ferromagnetic propertiesVacancy, defect, impurity interactions Local stress effectsInterface properties
HH
AFM, KPM, MFM, etcAFM, KPM, MFM, etc
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MultiferroicMultiferroic Modeling NeedsModeling Needs
• Basic models of the relationship between structure, bonding, and the resulting properties
Extend from local structure to extended propertiesModels of defect and vacancy impact on structure and properties
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Special nm Metrology NeedsSpecial nm Metrology Needs
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nm Scale Material Diagnosticsnm Scale Material Diagnostics
• Atomic structure of carbon based materialsLow energy TEM
• Modeling of nm probe interactions with materials Improve analysis of signals from AFM based and multi-probe metrologies
hνhν
HH
KPM, MFM, etcKPM, MFM, etc
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SummarySummary• Silicon Nanotechnology is production reality
and follows Moore’s law• New materials are needed for future
technologies• Materials research is crucial for revolutionary
devicesSynthesisMetrology & CharacterizationModeling
• New materials will require collaboration Gov’t, Universities, Research Institutes, & Industry
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For further information on Intel's silicon technology and Moore’s Law, please visit the Silicon Showcase
at www.intel.com/research/silicon