Ch9. Memory Devices

Advance Nano Device Lab. 1

Fundamentals of Modern VLSI Devices 2nd EditionYuan Taur and Tak H.Ning

Ch9. Memory Devices


Ch9.1 Static Random-Access Memory


CMOS SRAM Cell


Basic Operation of a CMOS SRAM Cell


Static Noise Margin of a CMOS SRAM Cell


Other Bistable MOSFET SRAM Cell


Bipolar SRAM Cell


Operation of a Bipolar Inverter



(9.1)

(9.2)

(9.3)

(9.4 )



(9.5)

(9.6 )

(9.7 )



(9.8)

(9.9)

(9.10)


Ch9.2 Dynamic Random-Access Memory


Basic DRAM Cell and Its Operation



(9.11)


Ch9.3 Nonvolatile Memory


MOSFET Nonvolatile Memory Devices

(9.12)


Charge Injection


Charge Storage

(9.13)


Charge Storage

(9.14 )

(9.15)


Charge Erasure

(9.16 )


Write, Read and Erase Operations


NOR and NAND Architecture


Endurance


UV-Erasable Floating-Gate Devices


Stacked-Gate Devices


Devices using Source-Side Injection


Split- and Stacked-Gate Devices


MNOS Device Using Channel Hot Electron Injection


MNOS Device Storing Two Bits per Cell

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