CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium...

15
1 Subject to change without notice. www.cree.com/wireless CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. PRELIMINARY Rev 1.2 – March 2011 FEATURES Up to 6 GHz Operation 13 dB Small Signal Gain at 2.0 GHz 11 dB Small Signal Gain at 6.0 GHz 8 W typical at P IN = 32 dBm 65 % Efficiency at P IN = 32 dBm 28 V Operation 3mm x 3mm Package APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Package Types: 440203 PN’s: CGH40006S

Transcript of CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium...

Page 1: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

1Subject to change without noticewwwcreecomwireless

CGH40006S6 W RF Power GaN HEMT Plastic

Creersquos CGH40006S is an unmatched gallium nitride (GaN) high electron

mobility transistor (HEMT) The CGH40006S operating from a 28 volt rail

offers a general purpose broadband solution to a variety of RF and microwave

applications GaN HEMTs offer high efficiency high gain and wide bandwidth

capabilities making the CGH40006S ideal for linear and compressed amplifier

circuits The transistor is available in a 3mm x 3mm surface

mount quad-flat-no-lead (QFN) package

PR

ELIM

INA

RY

Rev 1

2 ndash

Marc

h 2

01

1

FEATURES

bull Up to 6 GHz Operation

bull 13 dB Small Signal Gain at 20 GHz

bull 11 dB Small Signal Gain at 60 GHz

bull 8 W typical at PIN = 32 dBm

bull 65 Efficiency at PIN = 32 dBm

bull 28 V Operation

bull 3mm x 3mm Package

APPLICATIONS

bull 2-Way Private Radio

bull Broadband Amplifiers

bull Cellular Infrastructure

bull Test Instrumentation

bull Class A AB Linear amplifiers suitable

for OFDM W-CDMA EDGE CDMA

waveforms

Package Types 440203PNrsquos CGH40006S

2 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units

Drain-Source Voltage VDSS 84 Volts

Gate-to-Source Voltage VGS -10 +2 Volts

Storage Temperature TSTG -65 +150 ˚C

Operating Junction Temperature TJ 175 ˚C

Maximum Forward Gate Current IGMAX 21 mA

Soldering Temperature1 TS 260 ˚C

Thermal Resistance Junction to Case2 3 RθJC 101 ˚CW

Case Operating Temperature23 TC -40 +150 ˚C

Note1 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp2 Measured for the CGH40006S at PDISS = 8 W3 TC = Case temperature for the device It refers to the temperature at the ground tab underneath the package The PCB will add additional thermal resistance The RTH for Creersquos demonstration amplifier CGH40006S-TB with 13 (Oslash20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB is 51degC The total Rth from the heat sink to the junction is 101degC +51degC = 152 degCW

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min Typ Max Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -38 -33 -23 VDC VDS = 10 V ID = 21 mA

Gate Quiescent Voltage VGS(Q) ndash -30 ndash VDC VDS = 28 V ID = 100 mA

Saturated Drain Current IDS 17 21 ndash A VDS = 60 V VGS = 20 V

Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 21 mA

RF Characteristics2 (TC = 25˚C F0 = 58 GHz unless otherwise noted)

Small Signal Gain GSS 10 118 ndash dB VDD = 28 V IDQ = 100 mA

Power Output at PIN = 30 dBm POUT 5 69 ndash W VDD = 28 V IDQ = 100 mA

Drain Efficiency3 η 40 53 ndash VDD = 28 V IDQ = 100 mA PIN = 30 dBm

Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 100 mA PIN = 32 dBm

Dynamic Characteristics

Input Capacitance CGS ndash 27 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Output Capacitance CDS ndash 08 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Feedback Capacitance CGD ndash 01 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Notes1 Measured on wafer prior to packaging2 Measured in Creersquos narrow band production test fixture AD-000291 This fixture is designed for high volume test at 58 GHz and may not show the full capability of the device due to source inductance and thermal performance The demonstration amplifier CGH40006S-TB is a better indicator of the true RF performance of the device3 Drain Efficiency = POUT PDC

3 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Small Signal Gain vs Frequency at 28 V of the CGH40006S in the CGH40006S-TB

Input amp Output Return Losses vs Frequency at28 V of the CGH40006S in the CGH40006S-TB

10

12

14

16G

ain

(dB

)

S-parameter

0

2

4

6

8

10 15 20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

CGH40006S - S21

-12

-10

-8

-6

-4

-2

0

Gai

n(d

B)

S-parameter

-26

-24

-22

-20

-18

-16

-14

-12

10 15 20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

CGH40006S - S11

CGH40006S - S22

4 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Output Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Output Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

12

14

16

18

20

Gai

n(d

B)

Gain vs Pout

20 GHz30 GHz40 GHz50 GHz60 GHz

0

2

4

6

8

10

20 22 24 26 28 30 32 34 36 38 40

Gai

n(d

B)

Output Power (dBm)

40

50

60

70

Dra

inEf

ficie

ncy

EFF vs output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

20 22 24 26 28 30 32 34 36 38 40

Dra

inEf

ficie

ncy

Output Power (dBm)

5 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

8

10

12

14

Gai

n(d

B)

Gain vs input power

0

2

4

6

10 12 14 16 18 20 22 24 26 28 30 32 34

Gai

n(d

B)

Input Power (dBm)

20 GHz30 GHz40 GHz50 GHz60 GHz

60

70

80

90

100

Dra

inEf

ficie

ncy

Drain Efficiency vs Pin

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

40

50

10 12 14 16 18 20 22 24 26 28 30 32 34

Dra

inEf

ficie

ncy

Input Power (dBm)

6 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Output Power vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Drain Efficiency vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

6

7

8

9

10

Gai

n(d

B)

Gain Pin 32 dBm

0

1

2

3

4

5

20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

8

10

12

Out

putP

ower

(W)

Power (w) Pin 32 dBm

0

2

4

6

20 25 30 35 40 45 50 55 60

Out

putP

ower

(W)

Frequency (GHz)

40

50

60

70

Dra

inEf

ficie

ncy

Drain efficiency Pin 32 dBm

0

10

20

30

20 25 30 35 40 45 50 55 60

Dra

inEf

ficie

ncy

Frequency (GHz)

7 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Third Order Intermodulation Distortion vs Average Output Poweras a Function of Frequency of the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 60 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

-20

-10

0

IM3

(dB

c)IM3 vs Total output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

-60

-50

-40

-30

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

IM3

(dB

c)

Output Power (dBm)

8 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 2: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

2 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units

Drain-Source Voltage VDSS 84 Volts

Gate-to-Source Voltage VGS -10 +2 Volts

Storage Temperature TSTG -65 +150 ˚C

Operating Junction Temperature TJ 175 ˚C

Maximum Forward Gate Current IGMAX 21 mA

Soldering Temperature1 TS 260 ˚C

Thermal Resistance Junction to Case2 3 RθJC 101 ˚CW

Case Operating Temperature23 TC -40 +150 ˚C

Note1 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp2 Measured for the CGH40006S at PDISS = 8 W3 TC = Case temperature for the device It refers to the temperature at the ground tab underneath the package The PCB will add additional thermal resistance The RTH for Creersquos demonstration amplifier CGH40006S-TB with 13 (Oslash20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB is 51degC The total Rth from the heat sink to the junction is 101degC +51degC = 152 degCW

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min Typ Max Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -38 -33 -23 VDC VDS = 10 V ID = 21 mA

Gate Quiescent Voltage VGS(Q) ndash -30 ndash VDC VDS = 28 V ID = 100 mA

Saturated Drain Current IDS 17 21 ndash A VDS = 60 V VGS = 20 V

Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 21 mA

RF Characteristics2 (TC = 25˚C F0 = 58 GHz unless otherwise noted)

Small Signal Gain GSS 10 118 ndash dB VDD = 28 V IDQ = 100 mA

Power Output at PIN = 30 dBm POUT 5 69 ndash W VDD = 28 V IDQ = 100 mA

Drain Efficiency3 η 40 53 ndash VDD = 28 V IDQ = 100 mA PIN = 30 dBm

Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 100 mA PIN = 32 dBm

Dynamic Characteristics

Input Capacitance CGS ndash 27 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Output Capacitance CDS ndash 08 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Feedback Capacitance CGD ndash 01 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz

Notes1 Measured on wafer prior to packaging2 Measured in Creersquos narrow band production test fixture AD-000291 This fixture is designed for high volume test at 58 GHz and may not show the full capability of the device due to source inductance and thermal performance The demonstration amplifier CGH40006S-TB is a better indicator of the true RF performance of the device3 Drain Efficiency = POUT PDC

3 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Small Signal Gain vs Frequency at 28 V of the CGH40006S in the CGH40006S-TB

Input amp Output Return Losses vs Frequency at28 V of the CGH40006S in the CGH40006S-TB

10

12

14

16G

ain

(dB

)

S-parameter

0

2

4

6

8

10 15 20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

CGH40006S - S21

-12

-10

-8

-6

-4

-2

0

Gai

n(d

B)

S-parameter

-26

-24

-22

-20

-18

-16

-14

-12

10 15 20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

CGH40006S - S11

CGH40006S - S22

4 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Output Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Output Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

12

14

16

18

20

Gai

n(d

B)

Gain vs Pout

20 GHz30 GHz40 GHz50 GHz60 GHz

0

2

4

6

8

10

20 22 24 26 28 30 32 34 36 38 40

Gai

n(d

B)

Output Power (dBm)

40

50

60

70

Dra

inEf

ficie

ncy

EFF vs output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

20 22 24 26 28 30 32 34 36 38 40

Dra

inEf

ficie

ncy

Output Power (dBm)

5 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

8

10

12

14

Gai

n(d

B)

Gain vs input power

0

2

4

6

10 12 14 16 18 20 22 24 26 28 30 32 34

Gai

n(d

B)

Input Power (dBm)

20 GHz30 GHz40 GHz50 GHz60 GHz

60

70

80

90

100

Dra

inEf

ficie

ncy

Drain Efficiency vs Pin

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

40

50

10 12 14 16 18 20 22 24 26 28 30 32 34

Dra

inEf

ficie

ncy

Input Power (dBm)

6 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Output Power vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Drain Efficiency vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

6

7

8

9

10

Gai

n(d

B)

Gain Pin 32 dBm

0

1

2

3

4

5

20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

8

10

12

Out

putP

ower

(W)

Power (w) Pin 32 dBm

0

2

4

6

20 25 30 35 40 45 50 55 60

Out

putP

ower

(W)

Frequency (GHz)

40

50

60

70

Dra

inEf

ficie

ncy

Drain efficiency Pin 32 dBm

0

10

20

30

20 25 30 35 40 45 50 55 60

Dra

inEf

ficie

ncy

Frequency (GHz)

7 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Third Order Intermodulation Distortion vs Average Output Poweras a Function of Frequency of the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 60 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

-20

-10

0

IM3

(dB

c)IM3 vs Total output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

-60

-50

-40

-30

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

IM3

(dB

c)

Output Power (dBm)

8 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 3: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

3 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Small Signal Gain vs Frequency at 28 V of the CGH40006S in the CGH40006S-TB

Input amp Output Return Losses vs Frequency at28 V of the CGH40006S in the CGH40006S-TB

10

12

14

16G

ain

(dB

)

S-parameter

0

2

4

6

8

10 15 20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

CGH40006S - S21

-12

-10

-8

-6

-4

-2

0

Gai

n(d

B)

S-parameter

-26

-24

-22

-20

-18

-16

-14

-12

10 15 20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

CGH40006S - S11

CGH40006S - S22

4 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Output Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Output Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

12

14

16

18

20

Gai

n(d

B)

Gain vs Pout

20 GHz30 GHz40 GHz50 GHz60 GHz

0

2

4

6

8

10

20 22 24 26 28 30 32 34 36 38 40

Gai

n(d

B)

Output Power (dBm)

40

50

60

70

Dra

inEf

ficie

ncy

EFF vs output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

20 22 24 26 28 30 32 34 36 38 40

Dra

inEf

ficie

ncy

Output Power (dBm)

5 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

8

10

12

14

Gai

n(d

B)

Gain vs input power

0

2

4

6

10 12 14 16 18 20 22 24 26 28 30 32 34

Gai

n(d

B)

Input Power (dBm)

20 GHz30 GHz40 GHz50 GHz60 GHz

60

70

80

90

100

Dra

inEf

ficie

ncy

Drain Efficiency vs Pin

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

40

50

10 12 14 16 18 20 22 24 26 28 30 32 34

Dra

inEf

ficie

ncy

Input Power (dBm)

6 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Output Power vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Drain Efficiency vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

6

7

8

9

10

Gai

n(d

B)

Gain Pin 32 dBm

0

1

2

3

4

5

20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

8

10

12

Out

putP

ower

(W)

Power (w) Pin 32 dBm

0

2

4

6

20 25 30 35 40 45 50 55 60

Out

putP

ower

(W)

Frequency (GHz)

40

50

60

70

Dra

inEf

ficie

ncy

Drain efficiency Pin 32 dBm

0

10

20

30

20 25 30 35 40 45 50 55 60

Dra

inEf

ficie

ncy

Frequency (GHz)

7 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Third Order Intermodulation Distortion vs Average Output Poweras a Function of Frequency of the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 60 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

-20

-10

0

IM3

(dB

c)IM3 vs Total output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

-60

-50

-40

-30

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

IM3

(dB

c)

Output Power (dBm)

8 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 4: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

4 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Output Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Output Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

12

14

16

18

20

Gai

n(d

B)

Gain vs Pout

20 GHz30 GHz40 GHz50 GHz60 GHz

0

2

4

6

8

10

20 22 24 26 28 30 32 34 36 38 40

Gai

n(d

B)

Output Power (dBm)

40

50

60

70

Dra

inEf

ficie

ncy

EFF vs output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

20 22 24 26 28 30 32 34 36 38 40

Dra

inEf

ficie

ncy

Output Power (dBm)

5 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

8

10

12

14

Gai

n(d

B)

Gain vs input power

0

2

4

6

10 12 14 16 18 20 22 24 26 28 30 32 34

Gai

n(d

B)

Input Power (dBm)

20 GHz30 GHz40 GHz50 GHz60 GHz

60

70

80

90

100

Dra

inEf

ficie

ncy

Drain Efficiency vs Pin

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

40

50

10 12 14 16 18 20 22 24 26 28 30 32 34

Dra

inEf

ficie

ncy

Input Power (dBm)

6 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Output Power vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Drain Efficiency vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

6

7

8

9

10

Gai

n(d

B)

Gain Pin 32 dBm

0

1

2

3

4

5

20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

8

10

12

Out

putP

ower

(W)

Power (w) Pin 32 dBm

0

2

4

6

20 25 30 35 40 45 50 55 60

Out

putP

ower

(W)

Frequency (GHz)

40

50

60

70

Dra

inEf

ficie

ncy

Drain efficiency Pin 32 dBm

0

10

20

30

20 25 30 35 40 45 50 55 60

Dra

inEf

ficie

ncy

Frequency (GHz)

7 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Third Order Intermodulation Distortion vs Average Output Poweras a Function of Frequency of the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 60 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

-20

-10

0

IM3

(dB

c)IM3 vs Total output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

-60

-50

-40

-30

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

IM3

(dB

c)

Output Power (dBm)

8 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 5: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

5 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

Drain Efficiency vs Input Power as a Function of Frequencyof the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 100 mA

8

10

12

14

Gai

n(d

B)

Gain vs input power

0

2

4

6

10 12 14 16 18 20 22 24 26 28 30 32 34

Gai

n(d

B)

Input Power (dBm)

20 GHz30 GHz40 GHz50 GHz60 GHz

60

70

80

90

100

Dra

inEf

ficie

ncy

Drain Efficiency vs Pin

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

0

10

20

30

40

50

10 12 14 16 18 20 22 24 26 28 30 32 34

Dra

inEf

ficie

ncy

Input Power (dBm)

6 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Output Power vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Drain Efficiency vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

6

7

8

9

10

Gai

n(d

B)

Gain Pin 32 dBm

0

1

2

3

4

5

20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

8

10

12

Out

putP

ower

(W)

Power (w) Pin 32 dBm

0

2

4

6

20 25 30 35 40 45 50 55 60

Out

putP

ower

(W)

Frequency (GHz)

40

50

60

70

Dra

inEf

ficie

ncy

Drain efficiency Pin 32 dBm

0

10

20

30

20 25 30 35 40 45 50 55 60

Dra

inEf

ficie

ncy

Frequency (GHz)

7 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Third Order Intermodulation Distortion vs Average Output Poweras a Function of Frequency of the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 60 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

-20

-10

0

IM3

(dB

c)IM3 vs Total output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

-60

-50

-40

-30

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

IM3

(dB

c)

Output Power (dBm)

8 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 6: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

6 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Power Gain vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Output Power vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

Drain Efficiency vs Frequency of the CGH40006Sin the CGH40006S-TB at PIN = 32 dBm VDD = 28 V

6

7

8

9

10

Gai

n(d

B)

Gain Pin 32 dBm

0

1

2

3

4

5

20 25 30 35 40 45 50 55 60

Gai

n(d

B)

Frequency (GHz)

8

10

12

Out

putP

ower

(W)

Power (w) Pin 32 dBm

0

2

4

6

20 25 30 35 40 45 50 55 60

Out

putP

ower

(W)

Frequency (GHz)

40

50

60

70

Dra

inEf

ficie

ncy

Drain efficiency Pin 32 dBm

0

10

20

30

20 25 30 35 40 45 50 55 60

Dra

inEf

ficie

ncy

Frequency (GHz)

7 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Third Order Intermodulation Distortion vs Average Output Poweras a Function of Frequency of the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 60 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

-20

-10

0

IM3

(dB

c)IM3 vs Total output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

-60

-50

-40

-30

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

IM3

(dB

c)

Output Power (dBm)

8 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 7: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

7 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Third Order Intermodulation Distortion vs Average Output Poweras a Function of Frequency of the CGH40006S in the CGH40006S-TB

VDD = 28 V IDQ = 60 mA

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

-20

-10

0

IM3

(dB

c)IM3 vs Total output power

20 GHz

30 GHz

40 GHz

50 GHz

60 GHz

-60

-50

-40

-30

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

IM3

(dB

c)

Output Power (dBm)

8 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 8: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

8 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006SVDD = 28 V IDQ = 100 mA

Note 1 On a 20 mil thick PCB

Min

imum

Noi

se F

igur

e (d

B)

Noi

se R

esis

tanc

e (O

hms)

MA

G (d

B)

K F

acto

r

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 9: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

9 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S CW Power Dissipation De-rating Curve

Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)

Source and Load Impedances

Frequency (MHz) Z Source Z Load

1000 127 + j202 623 + j42

2000 598 + j681 327 + j329

3000 332 - j289 192 + j298

4000 238 - j945 152 + j157

5000 262 - j156 998 + j96

6000 194 - j2135 851 + j207

Note 1 VDD = 28V IDQ = 100mA in the 440203 package

Note 2 Optimized for power gain PSAT and PAE

Note 3 When using this device at low frequency series resistors should

be used to maintain amplifier stability

Note 4 35 pH source inductance is assumed between the package and

RF ground (20 mil thick PCB)

D

Z Source Z Load

G

S

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200

Pow

erD

issi

patio

n(W

)

Maximum Case Temperature (degC)

Power Dissipation derating Curve vs max Tcase

Note 1

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 10: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

10 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

R1 RES AIN 0505 470 Ohms (le5 tolerance) 1

R2 RES AIN 0505 50 Ohms (le5 tolerance) 1

R3 RES AIN 0505 360 Ohms (le5 tolerance) 1

C1 CAP 13 pF +-01 pF 0603 ATC 600S 1

C2 CAP 27 pF +-025 pF 0603 ATC 600S 1

C10 CAP 36 pF +-01 pF 0603 ATC 600S 1

C4C11 CAP 82 pF +-025 0603 ATC 600S 2

C6C13 CAP 470 pF +-5 0603 100 V 2

C7C14 CAP 33000 pF CER 100V X7R 0805 2

C8 CAP 10 uf 16V SMT TANTALUM 1

C15 CAP 10 uF +-10 CER 100V X7R 1210 1

C16 CAP 33 uF 100V ELECT FK SMD 1

J3J4 CONN SMA STR PANEL JACK RECP 2

J1 HEADER RTgtPLZ 1CEN LK 5POS 1

- PCB RO5880 0020rdquo THK 1

Q1 CGH40006S 1

CGH40006S-TB Demonstration Amplifier Circuit

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 11: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

11 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

CGH40006S-TB Demonstration Amplifier Circuit Schematic

CGH40006S-TB Demonstration Amplifier Circuit Outline

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 12: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

12 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Typical Package S-Parameters for CGH40006S(Small Signal VDS = 28 V IDQ = 100 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0933 -9295 1874 12547 0024 3802 0459 -4887

600 MHz 0922 -10426 1689 11864 0026 3170 0428 -5478

700 MHz 0912 -11377 1528 11275 0028 2633 0402 -5982

800 MHz 0905 -12183 1390 10761 0029 2171 0381 -6421

900 MHz 0899 -12873 1270 10306 0030 1768 0365 -6810

10 GHz 0894 -13472 1167 9896 0030 1411 0352 -7162

11 GHz 0891 -13997 1077 9523 0030 1091 0342 -7486

12 GHz 0888 -14462 999 9180 0031 800 0334 -7787

13 GHz 0886 -14878 931 8861 0031 534 0328 -8072

14 GHz 0884 -15255 871 8561 0031 288 0325 -8343

15 GHz 0883 -15597 817 8277 0031 058 0322 -8603

16 GHz 0881 -15912 769 8007 0031 -157 0321 -8854

17 GHz 0881 -16204 726 7749 0031 -360 0321 -9098

18 GHz 0880 -16475 688 7500 0031 -553 0321 -9335

19 GHz 0879 -16729 653 7260 0031 -738 0323 -9567

20 GHz 0879 -16968 621 7026 0031 -914 0325 -9794

21 GHz 0879 -17194 592 6800 0030 -1083 0327 -10017

22 GHz 0879 -17409 565 6579 0030 -1246 0330 -10236

23 GHz 0879 -17614 540 6362 0030 -1403 0334 -10451

24 GHz 0879 -17810 518 6151 0030 -1555 0338 -10663

25 GHz 0879 -17998 497 5943 0030 -1702 0342 -10871

26 GHz 0879 17820 477 5738 0029 -1844 0346 -11077

27 GHz 0879 17644 459 5537 0029 -1983 0351 -11281

28 GHz 0879 17474 442 5339 0029 -2118 0355 -11482

29 GHz 0879 17309 426 5143 0029 -2248 0360 -11680

30 GHz 0880 17149 411 4950 0028 -2376 0366 -11876

32 GHz 0880 16839 384 4570 0028 -2620 0376 -12263

34 GHz 0881 16543 360 4197 0027 -2851 0387 -12641

36 GHz 0882 16257 338 3831 0026 -3070 0399 -13013

38 GHz 0883 15981 319 3471 0025 -3275 0410 -13378

40 GHz 0884 15713 301 3116 0025 -3468 0422 -13738

42 GHz 0885 15452 285 2765 0024 -3647 0433 -14091

44 GHz 0887 15196 271 2419 0023 -3812 0445 -14440

46 GHz 0888 14945 257 2077 0022 -3963 0457 -14784

48 GHz 0889 14698 245 1738 0022 -4097 0468 -15124

50 GHz 0890 14455 233 1403 0021 -4215 0480 -15460

52 GHz 0892 14215 223 1071 0020 -4315 0491 -15792

54 GHz 0893 13978 213 741 0019 -4395 0503 -16120

56 GHz 0894 13743 204 415 0018 -4453 0514 -16445

58 GHz 0896 13511 195 091 0018 -4489 0525 -16766

60 GHz 0897 13280 187 -230 0017 -4500 0535 -17085

Note 1 Download this s-parameter file in ldquos2prdquo format at httpwwwcreecomproductswireless_s-parametersaspNote 2 On a 20 mil thick PCB

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 13: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

13 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Product Dimensions CGH40006S (Package Type mdash 440203)

Pin InputOutput

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 14: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

14 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Tape amp Reel Dimensions

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639

Page 15: CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

15 CGH40006S Rev 12 Preliminary

Cree Inc4600 Silicon Drive

Durham NC 27703USA Tel +19193135300

Fax +19198692733wwwcreecomwireless

Copyright copy 2010-2011 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet

to be accurate and reliable However no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use No license is granted by implication or otherwise under any patent

or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its products

for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities and are

provided for information purposes only These values can and do vary in different applications and actual performance

can vary over time All operating parameters should be validated by customerrsquos technical experts for each application

Cree products are not designed intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning construction maintenance or direct operation of a nuclear

facility

For more information please contact

Cree Inc4600 Silicon DriveDurham NC 27703wwwcreecomwireless

Ryan BakerMarketingCree Wireless Devices9194077816

Tom DekkerSales DirectorCree Wireless Devices9194075639