Accelerating Data Storage

Everspin – The MRAM Company

  MRAM - Magnetic Random Access Memory Ø  Fastest non-volatile memory with unlimited endurance

  Only company to have commercialized MRAM

  Established 2008, 100%+ annual revenue growth

  Fundamental & essential MRAM IP Ø  600+ Patents & Applications WW, 220+ US Patents granted

  Backed by top-tier VCs

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Our Customers

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Recognized Everspin for Perfect MRAM Quality 250k+ systems with no reported failures to-date

Critical Storage for Industrial Computing Boards Robust & reliable non-volatile memory solution

MRAM products for A350 Flight Control Computer Critical program and data storage in extreme environment

Non-volatile memory for Superbike Engine Control Reliable power fail safe memory for automotive temperature

MRAM used as write journal for RAID Storage Power fail recovery increasing system reliability & uptime

MRAM is Everywhere

Data Center & Storage�

Energy & Infrastructure

Automotive & Transportation�

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48-BGA Ø  x8 Asynchronous parallel I/O Ø  x16 Asynchronous parallel I/O Ø  x8 Asynchronous parallel 1.8V I/O

44-TSOP2, 54-TSOP2 Ø  x8 Asynchronous parallel I/O Ø  x16 Asynchronous parallel I/O

8-DFN Ø  SPI-compatible serial I/O Ø  40 MHz; No write delay

32-SOIC Ø  x8 Asynchronous parallel I/O

Current MRAM Products

16-bit I/O Part Number Density Temp

MR4A16B 16Mb 1M x 16 C,I,A

MR2A16A 4Mb 256K x 16 C,I,E,A

MR0A16A 1Mb 64K x 16 C,I,E,A

  8-bit I/O Part Number Density Temp

MR4A08B 16Mb 2M x 8 C,I,A MR2A08A 4Mb 512K x 8 C,I

MR0A08B 1Mb 128K x 8 C,I

MR256A08B 256Kb 32K x 8 C,I MR0D08B 1Mb 128K x 8, 1.8v I/O C

MR256D08 256Kb 32K x 8, 1.8v I/O C

SPI I/O Part Number Density Temp

MR25H40 4Mb 512K x 8 I, A

MR25H10 1Mb 128K x 8 I, A

MR25H256 256Kb 32K x 8 I, A

Temperatures Commercial 0 to +70 ºC

Industrial -40 to +85 ºC

Extended -40 to +105 ºC

Automotive -40 to +125 ºC

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MRAM Adoption Accelerating

7.0M+

MRAM Shipments

MRAM Customers

MRAM Design Wins(1)

MRAM Applications

MRAM Products

500+ 100+ 100+ 200+

(1) New Design Wins in CY2012

7M

13M

0

2

4

6

8

10

12

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16 Everspin Toggle MRAM Cumulative Shipments (Mu)

* Projections

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2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Spin Torque MRAM

64Mb DDR3

Serial SPI Compatible

256Kb, 1Mb

4Mb

Next Gen Hi-Speed

SRAM Compatible

SOIC

256Kb, 1Mb (x8)

SRAM Compatible

BGA

256Kb, 1Mb,4Mb (x16 x8)

1 Mb,256Kb 3.3/1.8V

(x8)

16 Mb (x16)

16 Mb (x8)

ST-MRAM

SRAM Compatible

TSSOP

4Mb (x16)

1Mb (x16)

256Kb, 1Mb, 4Mb (x16 x8)

1 Mb,256Kb 3.3/1.8V

(x8)

16 Mb (x16)

16 Mb (x8)

ST- MRAM

Product Roadmap

Production

Sampling

Design

Concept

Pre-Production

Rapidly Increasing From Mb to Gb Density

Increasing density and speed

Increasing density as defined by market requirements

Increasing density as defined by market requirements

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Spin-Torque – Next Generation MRAM

Current Toggle MRAM uses a magnetic field for switching

Next generation MRAM enables scaling to Gb densities Everspin on track to deliver industry’s first ST-MRAM

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Toggle Write Spin-Torque Write

Everspin Introduces the 64Mb DDR3 ST-MRAM

CCEESS 22001133

ST-MRAM

^ST-

What we’ve announced   Everspin debuts first Spin-Torque MRAM for high performance storage systems,   The EMD3D064M - 64Mb DDR3 ST-MRAM   A new type of high performance and ultra-low latency memory that will transform storage architecture   A performance-optimized Storage Class Memory (SCM) that bridges the role of today’s conventional memory with the demands of tomorrow’s storage systems   Provides non-volatility and high endurance

  Compatible with the industry standard JEDEC DDR3 specification   1600 million transfers per second per I/O, Bandwidth of 3.2 GBytes/second

  Select customers are now evaluating working samples.

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ST-MRAM

^ST-

Product Overview 64Mb DDR3 ST-MRAM

  Non-volatile 64Mb DDR3

  DDR3-1600 ST-MRAM

  16Mbx4, 8Mbx8, and 4Mbx16 configurations

  Supports Standard DDR3 SDRAM Features

  No refresh required

  Burst length: 8 (programmable Burst Chop of 4)

  DDR3 SDRAM Standard FBGA Package Pinout:

  VDD = 1.5V +/-.075V

  On-device termination

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ST-MRAM

^ST-

Building the ST-MRAM Eco System

  FPGA Evaluation Boards   Using DDR3 ST-MRAM DIMMs   DDR3 ST-MRAM controller IP   Enabling Memory Subsystems   Enabling Storage Subsystems

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Why it’s needed

Scalability Issues: Application Performance degrading

Faster & consistent data storage access is needed to deliver acceptable performance

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MORE DATA + MORE USERS + INSTANT ACCESS

What the industry is saying

  Three new low latency memories on the horizon:

Ø  Phase Change Memory, Memristor and Spin-Torque MRAM

  Processor architectures & filing systems need dramatic redesign to take advantage of new NVM technologies

  Systems must be ready for low latency NVM in 3-5 years

  Huge power savings and much faster data transfer

  Changing the memory hierarchy has huge knock-on effects on how computation works!

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Justin Rattner, CTO Intel, IDF 2012 San Francisco

Bifurcation of Moore’s Law

  Continuous demand for exponential cost declines in computational power and storage density

  Radical advances in memory density & performance will relieve processor memory performance bottleneck

  Processor chips dominated by memory, not logic

  Long wait time when accessing off-chip memory

  Big Data driving $28B of IT Spending in 2012

Ultra-low latency MRAM extends Moore’s Law 15

Compute needs ultra-low latency NVM

NAND improved storage I/O performance & latency

BUT still several orders of magnitude latency GAP

ST-MRAM is closest to RAM and to high volume mass production

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late

ncy

(ns)

10-1 100

CPU RAM

109

TAPE DISK

106 104

NAND MRAM

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Delivering 10x better Price/Performance

Cloud Storage Needs: Ø  More content & users, instant access Ø  Better response times from storage Ø  Predictable balanced performance

Nanosecond-class MRAM Storage

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…at only 50x Cost/GB

500x Performance…

NAND SSD MRAM SSD

Key Metrics NAND MRAM Density 64Gb 1Gb Latency 50us 45ns 4kB Write IOPS 800 400k Cost/GB 1 50

Delivering 100x Power/Performance

Data Center needs: Ø  Number of servers & CPU cores exploding Ø  Better bandwidth & IOPS to handle Big Data Ø  More performance @ less power to scale up

High Performance, Power-Efficient MRAM Storage

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Key Metrics NAND MRAM Density 64Gb 1Gb Power 80mW 400mW 4kB Write IOPS 800 400k Cost/GB 1 50

…at only 5x Power

500x Performance…

NAND SSD MRAM SSD

Faster, more reliable Enterprise Storage

  Enterprise Storage: Can’t lose data if power fails!   Historically using batteries/caps to protect data in RAM

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Areas of concern DRAM with battery/caps Spin-Torque MRAM Write performance Temporary persistent cache Truly persistent write cache

Complexity Power fail circuitry Simplified system

Reliability Lifetime reliability issues Truly persistent RAM

Form factor Large battery/caps No battery/caps

Temperature Commercial Automotive

Environmental Battery/caps concerns Truly green storage

Storage Solutions craving ST-MRAM

ST-MRAM complements solid state & magnetic storage Improved response time due to low latency & high bandwidth

ST-MRAM as Buffer Memory MRAM instead of low density DRAM

Better performance & reliability

ST-MRAM as I/O & Network Cache MRAM instead of NV-DRAM

Better reliability & overall TCO

ST-MRAM as Fast Storage-Tier MRAM in addition to SSD/HDD

Better IOPS/$/W & reliability 20

Multi-billion dollar market opportunity

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Advancing Storage Architecture

  Storage OEMs are tuning storage to application needs Ø  Capacity, Performance, Power, Uptime/Service and Reliability Ø  OEMs need to balance storage capacity and performance

Ø  HDD leveraged as capacity optimized data storage q Benefits : Lowest cost per GB/TB for data storage q Challenges: Random access, active power & power fail

Ø  NAND SSD leveraged as performance optimized storage q Benefits : More IOPS, reduced latency & less overall power q Challenges: Write latency & variability, endurance, power fail

Ø  ST-MRAM leveraged as non-volatile buffer/cache for storage q Benefits : DRAM like access, unlimited endurance & power fail q Challenges: New storage architecture, density & cost scaling

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Positioned for Extraordinary Growth

  Proven track record - manufacturing MRAM since 2006   Top tier 1 customers – Dell, LSI, Siemens, BMW, Airbus etc…   Deployment in many applications with exemplary quality

Continued MRAM leadership   Leadership ST-MRAM R&D with initial silicon demonstrated  

   Establishing 300mm ST-MRAM capacity to reduce cost   Asset light approach in collaboration with partners

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CCEESS 22001133