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The optimization and annealing process of solidly mounted resonator

(SMR) filters for 4G mobile communication system

MOST 103-2221-E-237 -006 -MY2

103 08 01 105 07 31

_2_

1.

2.

3.

105 09 01

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Abstract .............................................................................................. II

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II

LTE

4G 4G

c

English Abstract

This project entitled The optimization and annealing process of solidly mounted resonator filter for

4G mobile communication system. The purpose of this project is to optimize SMR filters for 4G mobile

communication system. SMR filters should be optimized in accordance with the specifications of LTE

communication system. The key annealing technology of device for 4G communication system will be

developed.

In the first year, the SMR devices with high performance are accomplished. The physical properties of

piezoelectric layer and Bragg reflector are optimized by rapid thermal annealing (RTA) and conventional

thermal annealing (CTA), respectively. The ideal properties of SMR devices for 4G applications are uniform

surface morphology, little acoustic loss, well adhesion, little parasitic effect and strongly c-axis orientated.

Therefore, this project investigates various commercial considerations to optimize the high-performance

SMR devices, including process time, procedures, cost, and efficiency. In the second year, in order to reduce

the insertion loss, ripples, and expand bandwidth, laser annealing processes and laser trimming processes

will be used to make the better electrical contact for 4G mobile communication system.

KeywordSolidly mounted resonatorsFiltersAnnealingLaser trimming

3

RF MEMS

(GPS) PDA

(WLAN)

2012 MEMS

22 2018 MEMS 60 MEMS

TriQuint Semiconductor 2010 MEMS

iSuppli TriQuint Semiconductor MEMS

MEMS TriQuint (RF amplifiers)

(surface acoustic waveSAW)(bulk acoustic waveBAW)

(4G)

(4G)

4G 3 GHz

RF Filter

(

)

4G SMR

4G SMR (rapid thermal annealing, RTA)

(conventional thermal annealing, CTA)

c

4

4G SMR WiMAX/LTE

4G SMR (RTA)(CTA)

1.

2.

3.

RTA CTA

SMR

CTA RTA 400C 500C SiO2

350C Mo 350C

350C 3-1

3-1 CTA RTA

CTA RTA

(C/sec) 0.1 5

(C) 400, 500 400, 500

(min) 10 10

Air Vacuum, Air, N2

5

SMR AlN AlN

AlN C AlN

AlN RTA AlN

AlN

AlN AlN AlN

RTA N2 400C 500C AlN

300C 300C

AlN AlN 3-2

3-2 AlN RTA

RTA

(C/sec) 5

(C) 400, 500

(min) 10

Vacuum, N2

(Atomic Force Microscopy, AFM)

AlN X (X-ray diffraction, XRD)

EDAX

6

AlN AlN

AlN C

(1064 nm)(532 nm)(355 nm)

3-3

3-3

(nm) 1064 532 355

(m) 41 50 16

(kHz) 100 30 40

(W) 0.1~0.75 0.05~0.5 0.01~0.1

AlN X (X-ray diffraction, XRD) AlN

7

Mo ( 0.5

) 1 2 3 4

4-1

Mo Si SiO2 Mo

SMR

4-1

CTA

400C 500C

0.1 C/sec 10 min 4-2 4-3

CTA 400C 500C 4

0.5

0.5 EDAX 4-4 4-5

4-1 4-2 CTA 400C 500C

4-2 CTA 400C

4-3 CTA500C

8

4-4 0.5 CTA 400C EDAX

4-5 0.5 CTA 500C EDAX

4-1 0.5CTA 400CEDAX

Element Weight % Atomic %

O K 17.27 55.59

Mo L 82.73 44.41

Totals 100.00 100.00

4-2 0.5CTA 500CEDAX

Element Weight % Atomic %

O K 30.42 72.39

Mo L 69.58 27.61

Totals 100.00 100.00

RTA

RTA

()

4

4-6 4-7 400C 500C

0.5 400C 500C

4-8 4-9 EDAX

4-3 4-4

4-6 RTA 400C

4-7 RTA 500C

4-8 0.5 RTA 400C 4-9 0.5 RTA 500C

9

EDAX EDAX

4-3 0.5 RTA 400C

EDAX Element Weight % Atomic %

O K 17.06 55.23

Mo L 82.94 44.77

Totals 100.00 100.00

4-4 0.5 RTA 500C

EDAX Element Weight % Atomic %

O K 29.11 71.12

Mo L 70.89 28.88

Totals 100.00 100.00

400C 500C AFM

4-10 4-11

4-10 RTA400C

4-11 RTA 500C

400C 500C AFM

4-12 4-13 0.5~2

3

4-12 RTA 400C

4-13 RTA 500C

10

0.5~2

3~4

RTA

RTA AlN

4-14 AlN 400C

AlN 500C AlN

AlN 400C 500C AlN

AlN

4-14 XRD 4-14 XRD

CTA RTA

AlN AlN

4-15

AlN (002)

4-16 4-16 0.25 W AlN

0.25 W AlN

0.75 W AlN

AlN

11

0.25 W AlN

(a) 0.1 W (b) 0.25 W

(c) 0.5 W (d) 0.75 W

4-15 XRD

4-16 AlN AlN (002)

AlN AlN

AlN 4-17

AlN (002)

4-18 4-18 0.15 W AlN

0.15 W AlN

AlN 0.15 W

12

(a) 0.05 W (b) 0.15 W

(c) 0.25 W (d) 0.5 W

4-17 XRD

4-18 AlN AlN (002)

AlN AlN

AlN

4-19 AlN (002)

4-20 4-20 0.025 W

AlN 0.05 W AlN

0.025 W 0.05W

AlN 0.025

W

13

(a) 0.01 W (b) 0.025 W

(c) 0.05 W (d) 0.075 W

4-19 XRD

4-20 AlN AlN (002)

4-21

112 nm SMR 1.3 W 1.4 W

4-22

1.3 W 1.4 W

14

4-21 Pt/Ti Si

(a) 1.3W

(b) 1.4W

4-22 Pt/Ti

CTA RTA

(AlN ) RTA

AlN AlN

0.25 W AlN AlN

0.15 W AlN AlN

0.025 W AlN AlN AlN

AlN

15

[1]. Susan Hong Yole2018 MEMS 60 EET

/MEMS2013 08 01

[2]. Judith Cheng MEMS Top10 TriQuint EET

/MEMS2011 02 14

[3]. K. W. Tay, Performance Characterization of thin AlN films deposited on Mo Electrode for Thin-Film

Bulk Acoustic-Wave Resonators, Jpn. J. Appl. Phys., vol.43, No.8A, pp.5510-5515, 2004.

[4]. R. C. Ruby, P. Bradley, Y. Oshmyansky, Thin film bulk acoustic resonators for wireless applications,

IEEE Ultrason. Symp, pp.813-821, 2001.

[5]. D. H. Kim, M. Yim, D. Chai, G. Yoon, Improvements of resonance characteristics due to thermal

annealing of Bragg reflectors in ZnO-based FBAR devices, Electronics Letters, vol.39, No.13,

pp.962-964, June 2003.

[6]. J. Larson, Power Handling and Temperature Coefficient Studies in FBAR Duplexers for the 1900 MHz

PCS Band, IEEE Ultrasonics Symposium, pp.869-874, 2000.

[7]. M. Hara, J. Kuypers, M. Esashi, Surface micromachined AlN thinfilm 2 GHz resonator for CMOS

integration, Sensors and Actuators, A117, pp.211-216, 2005.

[8]. R. Aigner, J. Ella, H. -J. Timme, L. Elbrecht, W. Nessler, S.Marksteiner, Advancement of MEMS into

RF-Filter Applications, IEEE IEDM, pp.897-900, 2000.

[9]. R. B. Stokes and J. D. Crawfold. X-Band Thin-Film Acoustic Filter on GaAs, IEEE Tans. Microwave

Theory Tech., vol.41, pp.1075-1080, July 1993.

[10]. V. Krishnaswamy, J. F. Rosenbaum, S. S. Horwitz, and R. A. Moore Film Bulk Acoustic Wave

Resonator and Filter Technology, IEEE Trans. MTT-S Dig., pp.153-155, 1992.

[11]. M. Schmid, E. Benes, W. Burger, and V. Kravchenko, Motional capacitance of layered piezoelectric

thickness-mode resonators, IEEE Trans. Ultrason., Ferroelect., Freq. Contr., vol.38, pp.199-206, 1991.

[12]. K. M. Lakin and J. S. Wang, Acoustic bulk wave composite resonators, Appl. Phys. Lett., vol.38,

pp.125, 1981.

[13]. K. M. Lakin, Thin film resonators and filters, IEEE Ultrasonics Sympium Proc., vol.2, pp.895-906,

1999.

[14]. J. B. Lee, J. P. Jung, M. H. Lee and J. S. Park, Effects of bottom electrodes on the orientation of AlN

films and the frequency responses of resonators in AlN-based FBARs, Thin Solid Films, vol.447-448,

pp.610-614, 2004.

[15].

(2008)

[16].

(2008)

16

[17]. R.C. Lin, Y.C. Chen, W.T. Chang, C.C. Cheng, and K.S. Kao, 2008, Highly sensitive mass sensor using

film bulk acoustic resonator, Sensors and Actuators A: Physical, 147, pp. 425429.

1.

100

2.

100

3.

500

CTA RTA

AlN

RTA AlN AlN

0.25 W

0.15 W 0.025 W AlN AlN

AlN

AlN

ICIAE2015ICASI 2015IEDMS2015 104

[1] W. C. Shih, Y. C. Chen, W. T. Chang, C. C. Cheng*, K. S. Kao, K. H. Cheng, C. M. Wang, C. Y. Wen,

J. Y. Chang and P. W. Ting, The Bragg Reflector Layer of Low Surface Roughness Based on Solidly

Mounted Resonators, in Proc the 3rd

International Conference on Industrial Application Engineering

2015 (ICIAE 2015), PS-16, Kitakyushu, Japan, Mar. 28-31, 2015.

[2] W. C. Shih, Y. C. Chen, W. T. Chang, C. Y. Wen, K. S. Kao, C. C. Cheng*, P. W. Ting and J. Y. Chang,

Dual mode frequency response using solidly mounted resonators, in Proc 2015 International

Conference on Applied System Innovation (ICASI 2015), ICASI-1044, Osaka, Japan, May 22-26, 2015.

[3] W. C. Shih, Y. C. Chen, P. W. Ting, K. S. Kao, C. C. Cheng* and W. T. Chang, Development of

dual-mode SMR using off-axis deposition AlN thin films, in Proc International Electron Devices and

Materials Symposium 2015 (IEDMS 2015), P267, Tainan, Taiwan, Nov. 19-20, 2015.

[4]

104 204Nov.

20~212015

104 4 08

2015 (The 3rd International Conference on Industrial Application

Engineering 2015, ICIAE2015) 104 3 28 3 31

(Kitakyushu International Conference Center, Kitakyushu, Japan)

(Institute of Industrial Applications Engineers, IIAE) 9

(Topics) Electrical technologyElectronic technology, Mechanical technologyControl

technologySensing technologyInformation technology Network technologyImage processing

Others 90 (oral

presentations) 3 keynote speech

27 28

MOST 1032221E237006MY2

-

104 3 28

104 3 31

() 2015

() The 3rd International Conference on Industrial Application

Engineering 2015 (ICIAE2015)

()

() The Bragg Reflector Layer of Low Surface Roughness Based on

Solidly Mounted Resonators

()

(The Bragg Reflector Layer of Low Surface Roughness Based on Solidly Mounted

Resonators)(DC)(RF) Si SiO2/Mo

(DC) Ti Pt

(RF)(AlN) X (XRD)

(SEM)(AFM)

(HP8720)(SMR) return loss

()

SMR

1. ()

2. (Program)

3.

ICIAE 2015

105 7 11

Control, IS3C2016) 105 7 4 7 6

(Tanglong International Hotel, Xian, China) (National Chin-Yi

University of Technology)IEEE Computer Society IEEE Industrial Electronics Society

(Xi'an University of Science and Technology)IS3C

110 (oral

presentations) 5 keynote speeches

IEEE Xplore EI

SCI

SensorsMaterials

MOST 1032221E237006MY2

--

( 2 )

105 7 4 105 7 6

()2016

() The Third International Symposium on Computer, Consumer and Control

(IS3C2016)

()

() Fabrication of SAW devices with dual mode frequency response using AlN and

ZnO thin films

Fabrication of SAW devices with

dual mode frequency response using AlN and ZnO thin films (

)(RF) Si3N4/Si

(AlN)(ZnO)(acoustic wave velocity)

(electromechanical coupling coefficient)

(Surface Acoustic Wave, SAW) (Interdigital transducer electrodes, IDTs)

(DC)(Photolithography)(Al)

IDT/ZnO/AlN/Si3N4/Si SAW 146.3

MHz(Rayleigh mode) 265.7 MHz(Sezawa mode)(Insertion loss, IL)-14.2 dB

(Rayleigh mode)-17.4 dB (Sezawa mode)

SAW

1. ()

2. (Program)

3.

4.