BU SA/200mm - Brief roadmap update - Introduction to ASML Special Applications · 2015-09-14 ·...

Confidential

BU SA/200mm- Brief roadmap update- Introduction to ASML Special Applications:AddressingKey Manufacturing Challenges

SPIE SA Technology Forum, February 2007Rob van der Werf, Director Marketing Special Applications

/ Slide 2 Confidential

ASML SA/200mm Litho Tool RoadmapNA min. resolution

1.20 45 nm

0.93 65 nm

57 nm60 nm

0.85 70 nm

0.75 90 nm

0.80 110 nm

0.70 130 nm

0.63 150 nm

0.65 220 nm

0.65 280 nm

280 nm300 nm

0.60 350 nm

0.60 400 nm

0.7~0.4um /22, /60, /80 *)

*): Targeting MEMS apps.

0.4~0.54

TWIN

SCA

N

/275D

XT:1250D

/450F

XT:1700F

/850C

XT:1400E

XT:1400E

/850D

2003 2004

/350D

/400D

/250C

/100D

2007 20082005 2006

i-Line365nm

Immersion

ArF193nm

Dry

KrF248nm

0.93

0.60

PAS

5500

Ste

pper

& S

cann

er

/125E

/750F /750G /750H

/1150C

XT:1400FXT:1450G

- Based on PAS and TWINSCAN- Ranges from i-line to ArF immersion- New 200mm tools still recently introduced- Enhancements also available for IB


System Upgrades – System EnhancementsAvailable for both Steppers and Scanners

Productivity Enhancement (PEP)Field retrofittable throughput improvement upgrade

Overlay (IOSt / IOSc):Field retrofittable overlay improvement upgrade

Imaging Enhancements:Lens Replacement ProductsOthers (e.g. Focus Control)

Modular design allows for ongoing development of IB valueBased on new tool development and dedicated filed upgrades


Productivity upgrades

Allowing to deliver more wafers per hour, effectively lowering the manufacturing cost per wafer

SW8.8.0 sw 8.8.4 sw 8.8.6 sw 8.8.8

System 5500/7x0 PEP upgrade path/700B TTL 104 PEP 700B 115 20W Krf 120 PEP 700D 138 PEP 700F HSS 153 PEP 750G 163

OA 100 110 115 128 142 153OA+RBA 138 153 163

/700C TTL 115 20W Krf 120 PEP 700D 138 PEP 700F HSS 153 PEP 750G 163OA 110 115 128 142 153

OA+RBA 138 153 163/700D TTL 120 PEP 700D 138 PEP 700F HSS 153 PEP 750G 163

OA 115 128 142 153OA+RBA 138 153 163

/750E TTL 120 PEP 750E 138 PEP 700F HSS 153 PEP 750G 163OA 115 128 142 153

OA+RBA 138 153 163/750F TTL 130 PEP 750F HSS 153 PEP 750G 163

OA 124 142 153OA+RBA S.W. 8.8 required 130 153 163

/750G TTL 155 PEP 750G 165OA 144 155

OA+RBA S.W. 8.8 required 155 165/750H TTL 130 750H (130-155) 155 750H (155-165) 165

OA 124 144 155OA+RBA S.W. 8.8 required 130 155 165

ATP job 30 mJ/cm2 ATP job 50 mJ/cm2

1999

2005

Original /700 introduced in 1998 is still field-upgradeable to latest /750H

ATP throughput

0

20

40

60

80

100

120

140

160

/400C + PEP 400C + PEP 400D HSS

wph

+12% +9%


/400D

/750H

/850C

/1100B

/1150C 12 20

PAS5500 Scanner Overlay Roadmap

Overlay Upgrade Packages IOSc

node

I-line

KrF

ArF

tool

280 nm

130 nm

110 nm

100nm

100 nm

100 nm

90 nm

/800 /850B

/1100

/850D

110 nm

IOSc-3

15 25

12 20

12 22

15 25

12 22

10 17

10 20

12 22

10 17

10 17

IOSc-4IOSc-2

20 40

15 25

15 25

IOSc-2

20 35

20 30

15 25

20 30

15 25

20 35

30 50

25 45

15 25

/750G130 nm

/450F220 nm

30 50

IOSc


Imaging Enhancements

DOEtuned illumination mode

Lens upgradesmaller CD

Unicomincreased slit-uniformity

DoseMappernon-uniformities corrected

New tool enhanced imaging also allows for IB Field Upgrades!


New options available with Software Rel. 8.9.0

New SW releases support introduction of new featuresR8.9.0 offers some interesting new functionalities

GridMapperFocus Spot Monitoring (2nd gen.)CLEAR! EFESE Compound Image Design Software


GridMapperBetter overlay through offsets per exposureOptimizes overlay for applications with non-linear grid distortions

Possible causes for non-linearityWafer processing (e.g. etching, Rapid Thermal Aneal)Tool-to-tool matching (especially competitor matching)

Corrections are measured by an Off-line metrology toolCorrections are applied per exposure (Tx, Ty, Rotation, Magnification, Asymetric rotation, Asymetric magnification)SMO improvements depend on application (e.g. process impact, repetitiveness)

Time

Ove

rlay

X,Y

XY

without GridMapper with GridMapper

Translation correction only

Real example – Proof dataOverlay improved by 20%

(improvement depends on application)

Time

Ove

rlay

X,Y

XY


Translation correction onlyTime

Ove

rlay

X,Y

XY

Time

Ove

rlay

X,Y

XY


Translation correction only





Overlay residuals Average translation of each field

Subtract Average translation of each field

No GridMapper With GridMapperTranslation correction per exposure

Overlay residuals Average translation of each field

Subtract Average translation of each field

No GridMapper With GridMapperTranslation correction per exposure

25% improvement


Focus Spot Monitoring 2nd Gen.

‘Real-time’ detection of focus spots caused by wafer backside contamination or particles on the E-table, including:

Prevention of false alerts in a flexible and user friendly mannerFull wafer coverage

Up by 15~30% compared to 1st generation FSMFSM Gen.IIRel 886

Samples: ~1700 Samples: ~1300 total

Stop FSM after spot switch

Use separate pool of edge samples

FSM Gen.IIRel 886


FSM Gen.IIRel 886




Use separate pool of edge samples Use separate pool of edge samples

Full wafer coverage


CLEAR!Automatic cleaning of chuck spot

The cleaning method is based on ASML’smanual cleaning with a granite padThis method has a proven efficiency (> 90%)

The pad is attached to an up/downmechanism built into the systemChuck spots are detected using FSM gen 2:

continuous monitoring of wafersreal time detection of chuck spots

In between batches, CLEAR! can clean the E-table

Improves both yield and machine uptime


EFESE

Provides a method to increase depth of focus for contact holes or vias, that need to be printed at various pitches:

The wafer stage is tilted by a user selectable angle to scan the aerial image through focus while exposingBy doing this, exposure latitude is exchanged for Depth of Focus

EFESE is a single exposure techniqueAnd therefore productivity neutral

avoiding the productivity penalty of double exposure


Compound Image Design Software

Compound Image:Image, made up of multiple sub-images from one or more reticles that can be distributed over the wafer as a single image.

Compound Image Design Software features:

The ability to use wafer coordinates when placing an imageThe ability to define a Compound Image, a group of (sub-)images, and distribute/copy those over the waferThe ability to have multiple identical images defined within one Compound Image The size of a Compound Image can be as large as the whole wafer

Step1:Create Compound Image

Step 2:Distribute Compound Images

Step 2:Distribute Compound Images

Automated tool to create jobs with composed new images consisting

of multiple sub-images

Confidential

Introduction to ASML Special ApplicationsAddressing Key Manufacturing Challenges


Presentation Outline

Introduction to ASML Special ApplicationsMission and strategy

Addressing Key Manufacturing ChallengesScaling, equipment, materials compatibility and technology & process know-how

Summary and Conclusions


Development of Application Markets

NanoNanoTechnologyTechnology

MEMSMEMS

SensorsSensors

Bio ChipBio Chip

PersonalPersonalMedicationMedication

PhotonicsPhotonics

PowerPowerchipschips

RFRF

FluidicsFluidics PlasticPlasticElectronicsElectronics

LogicLogic MemoryMemory

TraditionalTraditionalMarketMarket

Advanced Packaging(3D-IC, SiP, wafer

bonding, etc.)

More of Moore (traditional apps)Computing- Mostly digital content

- ITRS roadmap guided

More than Moore(new applications)Interacting with user and environment- Large variety- Lots of processes- No industry roadmapsTypically deals with manufacturing challenges

ExpandedExpandedMarketMarket

MPUMPU


ASML "Special Applications"

MissionProvide enabling volume manufacturing solutions to Micro & Nanotechnology and other Special Application markets.

StrategyBuild on our strengths in existing applications marketsInvest in competence developmentDeploy competencies in existing and new, emerging application marketsPartner to bridge the manufacturing gap





Summary and ConclusionsManufacturing challenges are recognized when porting processes from "Lab to "Fab"


Key Manufacturing Challenges

Bringing new, emerging applications successfully to a volume manufacturing environment poses some key challenges:

Ability to scaleAccess to “State of the Art” equipmentMaterials CompatibilityKnowledge of enabling Technologies & Processes

Bridging the Manufacturing Gap



Ability to scale

Access to “State of the Art” equipment

Materials Compatibility

Knowledge of enabling Technologies & Processes


Ability to scale

Ramp up from laboratory equipment to production tools“Lab to Fab”

Volume ProductionR & DContact printersE-beamImprint Steppers and Scanners

depending on application

- ASML equipment is widely used as volume production tool

- SA has experience to scale from R&D to volume manufacturing


‘New’ or ‘Certified’ Systems

SA Product PortfolioEquipment overview andRelation with Apps Markets

Low cost requirements also addressed with Pre-Owned equipment (refurb./remanuf. and certified to perform as new)

Critical Resolution

5500 AERIAL Scanner Body(i-line and DUV)

5500 DUV AERIAL Stepper Body

5500 i-line AERIAL Stepper Body

5500 i-line Compact Stepper Body

0.2 µm 0.1 µm0.4 µm0.8 µm1.6 µm

PAS 5500/250C & 275D

PAS 5500/300C & 350C

PAS 5500/100D

PAS 5500/22

PAS 5500/125E

PAS 5500/80

Opto/MEMSSilicon

Compound

Thin Film Head

PAS 5500/400C & D

PAS 5500/550B & D

PAS 5500/750E & F

PAS 5500/850C (TFH800)

PAS 5500/1150C (TFH1100)



Ability to scale




- ASML offers access to volume manufacturing capable equipment,

- Demonstrating application specific material handling and manufacturing processes


Plus - Leading Edge Research Centers

Access via ASML Applications Development Labs

ASML Appl.Dev. Lab

ASML Appl.Dev. Lab


Advanced i-line 5500 /275


ASML Applications Development Labs - Veldhoven



Ability to scale




SA offers competence to make necessary tool modifications to accommodate for all kinds of material handling


Material handlingProcessing of non-standard substrates

Odd shapes

Slider tool to place square wafers on the pre-aligner



Square ceramic thick wafers4.5 inch side / < 2 mm thick

Odd shaped samples10 x 10 mm & Quarter wafers

Non-std thickness, weight, (more) odd shapes



Small substrates≥ 2 inch diameter

Thin, warped substrates(Thickness = 140 um)

Warped and (very) small



Ability to scale




SA offers Application know-how, like special alignment capabilities and process capabilities


Wafer edge

Optics in wafertableReal mark

Mark image

Lens

Example of Enabling Technology Hardware

3DAlign™Aligning front to backside markers


Example of New ProcessHigh Aspect Ratio Imaging (13:1)

300nm Isolated Space imaging on Silicon in 4um of resist

Resist: Clarient AZ DTF-8 NA setting: 0.40 σ value: 0.37

300nm Isolated Space imaging on Nickel-Iron in 4um of resist

+0.0um +0.2um +0.4um +0.6um

+0.2um +0.4um +0.6um +0.8um

Focus setting

Focus setting

/300


Example of New ProcessT- Gate


The Nantero ChallengeA 200nm line/space pattern transfer of Carbon Nanotube Fabrics was demonstrated using a “CMOS Safe” process on a standard ASML stepper, enabling the transfer to a volume manufacturing environment

Solid State Technology Online, April 12, 2006:"Nantero touts success with 22nm memory switch, claiming it has successfully demonstrated scalability of its nonvolatile random access memory (NRAM) technology, with fabrication and testing of a 22nm NRAM memory switch."

Suspendednanotubes

Electrodes(~100nm with 300nm period)


Bridging the Manufacturing Gap

Small wafer Small wafer handlinghandling

Square wafer Square wafer handlinghandling

Special OpticsSpecial Optics

Small pieces Small pieces handlinghandling

OutgassingOutgassingsafeguardssafeguards

BackBack--side wafer side wafer alignmentalignment

CNTCNT

TT--gate processgate process

High aspect High aspect ratioratio

MicroMicropipettespipettes

Litho equipmentLitho equipmentLitho equipment

EquipmentadaptationsEquipmentEquipmentadaptationsadaptationsEnabling processesEnabling Enabling processesprocesses

Bio chipsBio chips

Mechanical Mechanical structuresstructures FluidicsFluidics

Optical devicesOptical devices

PlasticsPlastics

Image SensorsImage Sensors Bridge the Manufacturing gapBridge the Manufacturing gap

AAbility to scalebility to scaleAccess to “State of the Art” equipmentAccess to “State of the Art” equipment

Materials CompatibilityMaterials CompatibilityKnowledge of enabling Technologies & ProcessesKnowledge of enabling Technologies & Processes

ProductsProductsProducts


Thank you

BU SA/200mm - Brief roadmap update - Introduction to ASML Special Applications · 2015-09-14 ·...

Documents

Transcript of BU SA/200mm - Brief roadmap update - Introduction to ASML Special Applications · 2015-09-14 ·...