BTS711L1

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Semiconductor Group 1 2003-Oct-01

Smart Four Channel Highside Power Switch

Features Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection

(including load dump) Fast demagnetization of inductive loads Reverse battery protection 1) Undervoltage and overvoltage shutdown

with auto-restart and hysteresis Open drain diagnostic output

Open load detection in ON-state CMOS compatible input Loss of ground and loss of V bb protection Electro s tatic d ischarge ( ESD ) protection

Application C compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitive loads Replaces electromechanical relays and discrete circuits

General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnosticfeedback, monolithically integrated in Smart SIPMOS technology.Providing embedded protective functions.

Pin Definitions and Functions

Pin Symbol Function 1,10,11,12,15,16,19,20

Vbb Positive power supply voltage . Design thewiring for the simultaneous max. short circuitcurrents from channel 1 to 4 and also for lowthermal resistance

3 IN1 Input 1 .. 4 , activates channel 1 .. 4 in case of5 IN2 logic high signal

7 IN39 IN418 OUT1 Output 1 .. 4 , protected high-side power output17 OUT2 of channel 1 .. 4. Design the wiring for the14 OUT3 max. short circuit current13 OUT44 ST1/2 Diagnostic feedback 1/2 of channel 1 and

channel 2, open drain, low on failure8 ST3/4 Diagnostic feedback 3/4 of channel 3 and

channel 4, open drain, low on failure2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1) With external current limit (e.g. resistor R GND=150 ) in GND connection, resistor in series with STconnection, reverse load current limited by connected load.

Product Summary Overvoltage Protection V bb(AZ) 43 V

Operating voltage V bb(on) 5.0 ... 34 Vactive channels: one two parallel four parallel

On-state resistance R ON 200 100 50 m Nominal load current I L(NOM) 1.9 2.8 4.4 A

Current limitation I L(SCr) 4 4 4 A

Pin configuration (top view)

Vbb 1 20 V bb GND1/2 2 19 V bb

IN1 3 18 OUT1ST1/2 4 17 OUT2

IN2 5 16 Vbb

GND3/4 6 15 V bb

IN3 7 14 OUT3ST3/4 8 13 OUT4

IN4 9 12 V bb Vbb 10 11 V bb

P-DSO-20

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Block diagramFour Channels; Open Load detection in on state;

+ V bb

IN1

ST1/2ESD

OUT1

Logic

Voltage

sensor

Voltagesource

Open load

detection 1Short to Vbb

Level shifter

Temperaturesensor 1

Rectifier 1

Limit for unclampedind. loads 1

Gate 1protection

Currentlimit 1

3

4

V Logic

Overvoltageprotection

OUT2

Open load

detection 2Short to Vbb

Level shifter

Temperaturesensor 2

Rectifier 2Limit for

unclampedind. loads 2

Gate 2protection

Currentlimit 2

IN25

GND1/2

R RO1 O2

Chargepump 1

Chargepump 2 Channel 2

Channel 1

Signal GND

GND1/22

Chip 1Chip 1

+ V bb

IN3

ST3/4

PROFET

OUT3

7

8

OUT4

IN49

GND3/4

R RO3O4

Channel 4

Channel 3

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Leadframe

18

17

Load GND

Load

Leadframe

14

13

Load GND

Load

Signal GND

GND3/46

Chip 2Chip 2

Logic and protection circuit of chip 2

(equivalent to chip 1)

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Maximum Ratings at T j = 25C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) V bb 43 VSupply voltage for full short circuit protectionT j,start = -40 ...+150C

V bb 34 V

Load current (Short-circuit current, see page 5) I L self-limited ALoad dump protection 2) V LoadDump = U A + V s , U A = 13.5 V

R I3 ) = 2 , t d = 200 ms; IN = low or high,each channel loaded with R L = 7.1 ,

V Loaddump 4 )

60 V

Operating temperature rangeStorage temperature range

T j T stg

-40 ...+150-55 ...+150

C

Power dissipation (DC) 5 T a = 25C:(all channels active) T a = 85C:

P tot 3.61.9

W

Inductive load switch-off energy dissipation, single pulseVbb = 12V, T j,start = 150C 5),I L = 1.9 A, ZL = 66 mH, 0 one channel:I L = 2.8 A, ZL = 66 mH, 0 two parallel channels:I L = 4.4 A, ZL = 66 mH, 0 four parallel channels:see diagrams on page 9 and page 10

E AS 150320800

mJ

Electrostatic discharge capability (ESD)(Human Body Model)

V ESD 1.0 kV

Input voltage (DC)V

IN -10 ... +16 VCurrent through input pin (DC)Current through status pin (DC)

see internal circuit diagram page 8

I IN I ST

2.05.0

mA

Thermal resistance junction - soldering point 5),6) each channel: R thjs 16 K/Wjunction - ambient 5) one channel active:

all channels active:R thja 44

35

2) Supply voltages higher than V bb(AZ) require an external current limit for the GND and status pins, e.g. with a

150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for inputprotection is integrated.

3) R I = internal resistance of the load dump test pulse generator4)

VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 408395) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 m thick) copper area for V bb connection. PCB is vertical without blown air. See page 15

6) Soldering point: upper side of solder edge of device pin 15. See page 15

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Electrical Characteristics

Parameter and Conditions, each of the four channels Symbol Values Unitat T j = 25 C, V bb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and CharacteristicsOn-state resistance (V bb to OUT)

IL = 1.8 A each channel, T j = 25C:T j = 150C:

two parallel channels, T j = 25C:four parallel channels, T j = 25C:

R ON -- 165320

8342

200400

10050

m

Nominal load current one channel active:

two parallel channels active:four parallel channels active:

Device on PCB 5), T a = 85C, T j 150C

I L(NOM) 1.7

2.64.1

1.9

2.84.4

-- A

Output current while GND disconnected or pulledup; V bb = 30 V, V IN = 0, see diagram page 9

I L(GNDhigh) -- -- 10 mA

Turn-on time to 90% V OUT:Turn-off time to 10% V OUT:

R L = 12 , T j =-40...+150C

t on t off

8080

200200

400400

s

Slew rate on

10 to 30% V OUT , R L = 12 , T j =-40...+150C:

dV /dt on 0.1 -- 1 V/ s

Slew rate off70 to 40% V OUT , R L = 12 , T j =-40...+150C:

-dV /dt off 0.1 -- 1 V/ s

Operating Parameters Operating voltage 7) T j =-40...+150C: V bb(on) 5.0 -- 34 VUndervoltage shutdown T j =-40...+150C: V bb(under) 3.5 -- 5.0 VUndervoltage restart T j =-40...+25C:

T j =+150C:V bb(u rst) -- -- 5.0

7.0V

Undervoltage restart of charge pumpsee diagram page 14 T j =-40...+150C:V bb(ucp) -- 5.6 7.0 V

Undervoltage hysteresisV bb(under) = V bb(u rst) - V bb(under)

V bb(under) -- 0.2 -- V

Overvoltage shutdown T j =-40...+150C: V bb(over) 34 -- 43 VOvervoltage restart T j =-40...+150C: V bb(o rst) 33 -- -- VOvervoltage hysteresis T j =-40...+150C: V bb(over) -- 0.5 -- VOvervoltage protection 8) T j =-40...+150C:

I bb = 40 mA

V bb(AZ) 42 47 -- V

7) At supply voltage increase up to V bb = 5.6 V typ without charge pump, V OUT V bb - 2 V8) see also V ON(CL) in circuit diagram on page 8.

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Standby current, all channels off T j =25C :

VIN = 0

T j =150C:

I bb(off) ----

2844

6070

A

Leakage output current (included in I bb(off) )V IN = 0

I L(off) -- -- 12 A

Operating current 9), V IN = 5V, T j =-40...+150CI GND = I GND1/2 + I GND3/4 , one channel on:

four channels on: I GND --

--28

312

mA

Protection Functions 10) Initial peak short circuit current limit, (see timing

diagrams, page 12) each channel, T j =-40C:

T j =25C:T j =+150C:

I L(SCp) 5.54.52.5

9.57.54.5

1311

7

A

two parallel channels twice the current of one channelfour parallel channels four times the current of one channel

Repetitive short circuit current limit,T j = T jt each channel

two parallel channelsfour parallel channels

(see timing diagrams, page 12)

I L(SCr) ------

444

------

A

Initial short circuit shutdown time T j,start =-40C:T j,start = 25C:

(see page 11 and timing diagrams on page 12)

t off(SC) ----

5.54

----

ms

Output clamp (inductive load switch off) 11) at V ON(CL) = Vbb - VOUT

V ON(CL) -- 47 -- V

Thermal overload trip temperature T jt 150 -- -- CThermal hysteresis T jt -- 10 -- K

Reverse BatteryReverse battery voltage 12 ) -V bb -- -- 32 V

Drain-source diode voltage (Vout > Vbb ) I L = - 1.9 A, T j = +150C

-V ON -- 610 -- mV

9) Add I ST , if I ST > 010 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are notdesigned for continuous repetitive operation.

11 ) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowestVON(CL)

12 ) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normaloperating conditions due to the voltage drop across the intrinsic drain-source diode. The temperatureprotection is not active during reverse current operation! Input and Status currents have to be limited (seemax. ratings page 3 and circuit page 8).

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Diagnostic CharacteristicsOpen load detection current, (on-condition)

each channel, T j = -40C:T j = 25C:

T j = 150C:

I L (OL)1 101010

------

200150150

mA

two parallel channels twice the current of one channelfour parallel channels four times the current of one channel

Open load detection voltage 13) T j =-40..+150C: V OUT(OL) 2 3 4 VInternal output pull down

(OUT to GND), V OUT = 5 V T j =-40..+150C: R O 4 10 30 k

Input and Status Feedback14 )

Input resistance

(see circuit page 8) T j =-40..+150C:R I 2.5 3.5 6 k

Input turn-on threshold voltageT j =-40..+150C:

V IN(T+) 1.7 -- 3.5 V

Input turn-off threshold voltageT j =-40..+150C:

V IN(T-) 1.5 -- -- V

Input threshold hysteresis V IN(T) -- 0.5 -- V Off state input current V IN = 0.4 V: T j =-40..+150C:

I IN(off) 1 -- 50 A

On state input current V IN = 5 V: T j =-40..+150C: I IN(on) 20 50 90 A

Delay time for status with open load after switchoff (other channel in off state)

(see timing diagrams, page 13 ), T j =-40..+150C:

t d(ST OL4) 100 320 800 s

Delay time for status with open load after switchoff (other channel in on state)

(see timing diagrams, page 13 ), T j =-40..+150C:

t d(ST OL5) -- 5 20 s

Status invalid after positive input slope(open load) T j =-40..+150C:

t d(ST) -- 200 600 s

Status output (open drain) Zener limit voltage T j =-40...+150C, I ST = +1.6 mA:ST low voltage T j =-40...+25C, I ST = +1.6 mA:

T j = +150C, I ST = +1.6 mA:

V ST(high) V ST(low)

5.4----

6.1----

--0.40.6

V

13) External pull up resistor required for open load detection in off state.14) If ground resistors R GND are used, add the voltage drop across these resistors.

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Truth TableChannel 1 and 2 Chip 1 IN1 IN2 OUT1 OUT2 ST1/2 ST1/2 Channel 3 and 4(equivalent to channel 1 and 2)

Chip 2 IN3 IN4 OUT3 OUT4 ST3/4 ST3/4

BTS 711L1 BTS 712N1Normal operation L

LHH

LHLH

LLHH

LHLH

HHHH

HHHH

Open load Channel 1 (3) LLH

LHX

ZZH

LHX

H(L15 ))HL

LHH

Channel 2 (4) LHX

LLH

LHX

ZZH

H(L15 ))HL

LHH

Short circuit to V bb Channel 1 (3) LLH

LHX

HHH

LHX

L16 ) H

H(L17 ))

L16) HH

Channel 2 (4) LHX

LLH

LHX

HHH

L16) H

H(L17 ))

L16) HH

Overtemperature both channel LXH

LHX

LLL

LLL

HLL

HLL

Channel 1 (3) LH

XX

LL

XX

HL

HL

Channel 2 (4) XX

LH

XX

LL

HL

HL

Undervoltage/ Overvoltage X X L L H H L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit

H = "High" Level Status signal valid after the time delay shown in the timing diagramsParallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs andoutputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

PROFETIN2

ST1/2OUT2

GND1/2

Vbb

VOUT2IGND1/2

VON2

18

2

Leadframe

3

4

IN1

VOUT1

VON1

IL1OUT1

5

17

VIN1 VIN2 VST1/2

Ibb

IIN1

IIN2

IST1/2IL2

RGND1/2

Vbb

Chip 1PROFET

IN4

ST3/4OUT4

GND3/4

Vbb

VOUT4IGND3/4

VON4

14

6

Leadframe

7

8

IN3

VOUT3

VON3

IL3OUT3

9

13

VIN3 VIN4 VST3/4

IIN3

IIN4

IST3/4IL4

R GND3/4

Chip 2

Leadframe (V bb ) is connected to pin 1,10,11,12,15,16,19,20External R GND optional; two resistors R GND1/2 ,R GND3/4 = 150 or a single resistor R GND = 75 forreverse battery protection up to the max. operating voltage.

15 )With additional external pull up resistor16) An external short of output to V bb in the off state causes an internal current from output to ground. If R GND isused, an offset voltage at the GND and ST pins will occur and the V ST low signal may be errorious.

17 ) Low resistance to V bb may be detected by no-load-detection

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Input circuit (ESD protection), IN1...4

IN

GND

IR

ESD-ZDII

I

ESD zener diodes are not to be used as voltage clamp atDC conditions. Operation in this mode may result in adrift of the zener voltage (increase of up to 1 V).

Status output, ST1/2 or ST3/4

ST

GND

ESD-ZD

+5V

R ST(ON)

ESD-Zener diode: 6.1 V typ., max 5.0 mA;RST(ON) < 380 at 1.6 mA, ESD zener diodes are not tobe used as voltage clamp at DC conditions. Operation inthis mode may resul t in a drift of the zener voltage(increase of up to 1 V).

Inductive and overvoltage outputclamp, OUT1...4

+Vbb

OUT

PROFET

VZ

V ON

Power GND V ON clamped to V ON(CL) = 47 V typ.

Overvoltage protection of logic part GND1/2 or GND3/4

+ Vbb

IN

STSTR

GND

GNDR

Signal GND

Logic

VZ2

INR I

VZ1

VZ1 = 6.1 V typ., V Z2 = 47 V typ., R I = 3.5 k typ. , RGND = 150

Reverse battery protection

GND

LogicSTR

IN

ST

5V

OUT

LR

Power GND

GNDR

Signal GND

Power Inverse

IR

Vbb-

Diode

R GND = 150 , R I = 3.5 k typ ,

Temperature protection is not active during inversecurrent operation.

.

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Open-load detection, OUT1...4ON-state diagnostic condition:

V ON < R ON IL(OL); IN high

Open loaddetection

Logicunit

+ V bb

OUT

ONVON

OFF-state diagnostic condition:V OUT > 3 V typ.; IN low

Open loaddetection

Logicunit

VOUT

Signal GND

R EXT

RO

OFF

GND disconnect (channel 1/2 or 3/4)

PROFET

V

IN2

STOUT2

GND

bb

Vbb

Ibb

IN1OUT1

VIN1

VIN2 VST

VGND

Any kind of load. In case of IN = high is V OUT V IN - V IN(T+).Due to V GND > 0, no V ST = low signal available.

GND disconnect with GND pull up (channel 1/2 or 3/4)

PROFET

V

IN2

STOUT2

GND

bb

Vbb

IN1OUT1VIN1

VIN2

VST

VGND

Any kind of load. If V GND > V IN - V IN(T+) device stays offDue to V GND > 0, no V ST = low signal available.

Vbb disconnect with energized inductiveload

PROFET

V

IN2

STOUT2

GND

bb

Vbb

IN1OUT1high

For an inductive load current up to the limit defined by E AS (max. ratings see page 3 and diagram on page 10) eachswitch is protected against loss of V bb .

Consider at your PCB layout that in the case of Vbb dis-connection with energized inductive load the whole loadcurrent flows through the GND connection.

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Inductive load switch-off energydissipation

PROFET

VIN

ST

OUT

GND

bb

=

E

E

E

E AS

bb

L

R

ELoad

RL

L

{LZ

Energy stored in load inductance:

E L = 1 / 2 L I2L

While demagnetizing load inductance, the energydissipated in PROFET is

E AS= E bb + E L - E R= VON(CL) iL(t) dt,

with an approximate solution for R L > 0 :

E AS=IL L2 RL

( Vbb + |VOUT(CL) |) ln (1+ILRL

|VOUT(CL) |)

Maximum allowable load inductance fora single switch off (one channel) 5)

L = f (I L ); T j,start = 150C, V bb = 12 V, R L = 0

L [mH]

1

10

100

1000

1 1.5 2 2.5 3

IL [A]

Typ. on-state resistance RON = f (V bb ,T j ); IL = 1.8 A, IN = high

RON [mOhm]

0

50

100

150

200

250

300

350

400

450

500

0 10 20 30 40

Tj = 150C

85C

25C

-40C

Vbb [V]

Typ. open load detection current I L(OL) = f (V bb ,T j ); IN = high

IL(OL) [mA]

0

20

40

60

80

100

120

140

0 5 10 15 20 25 30

n o

l o a

d d e

t e c

t i o n n o t s p e c

i f i e d

f o r

V b b

< 6 V

T j = 150C

85C

25C

-40C

Vbb [V]

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Typ. standby current I bb(off) = f (T j ); Vbb = 9...34 V, IN 1...4 = low

Ibb(off) [A]

0

10

20

30

40

50

60

-50 0 50 100 150 200

T j [C]

Typ. initial short circuit shutdown time t off(SC) = f (T j,start ); Vbb =12 V

toff(SC) [msec]

0

1

2

3

4

5

6

-50 0 50 100 150 200

T j,start [C]

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Figure 1a: Vbb turn on:

IN2

V

OUT1

t

V

bb

ST open drain

IN1

VOUT2

Figure 2a: Switching a lamp:

IN

ST

OUT

L

t

V

I

The initial peak current should be limited by the lamp and not bythe initial short circuit current I L(SCp) = 7.5 A typ. of the device.

Figure 2b: Switching an inductive load

IN

ST

L

t

V

I

*)

OUT

t d(ST)

IL(OL)

*) if the time constant of load is too large, open-load-status may

occur

Figure 3a: Turn on into short circuit:shut down by overtemperature, restart by cooling

other channel: normal operation

t

I

ST

IN1

L1

L(SCr)I

IL(SCp)

toff(SC)

Heating up of the chip may require several milliseconds, dependingon external conditions (t off(SC) vs. T j,start see page 11)

Timing diagramsTiming diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagramsare valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequentlythe diagrams are valid for each channel as well as for permuted channels

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Figure 3b: Turn on into short circuit:shut down by overtemperature, restart by cooling(two parallel switched channels 1 and 2)

t

ST1/2

IN1/2

L1 L2

L(SCr)I

IL(SCp)

I + I

toff(SC)

Figure 4a: Overtemperature:Reset if T j

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Figure 5c: Open load: detection in ON- and OFF-state(with R EXT), turn on/off to open load

t

V

ST

IN1

IL1

td(ST) d(ST OL5)

channel 1: open load

t d(ST) t

OUT1

IN2 channel 2: normal operation

td(ST OL5) depends on external circuitry because of highimpedance

Figure 6a: Undervoltage:

IN

V

OUT

t

V

bb

ST open drain

V Vbb(under)

bb(u rst)

bb(u cp)V

Figure 6b: Undervoltage restart of charge pump

bb(under)V

Vbb(u rst)

Vbb(over)

Vbb(o rst)

Vbb(u cp)

o f f - s

t a t e

o n - s

t a t e

VON(CL)

Vbb

Von

o f f - s

t a t e

IN = high, normal load conditions.Charge pump starts at V bb(ucp) = 5.6 V typ.

Figure 7a: Overvoltage:

IN

V

OUT

t

V

bb

ST

ON(CL)V Vbb(over) Vbb(o rst)

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Package and Ordering CodeStandard P-DSO-20-9 Ordering Code

BTS711L1 Q67060-S7000-A2

All dimensions in millimetres1) Does not include plastic or metal protrusions of 0.15 max per side2) Does not include dambar protrusion of 0.05 max per side

Definition of soldering point with temperature T s :upper side of solder edge of device pin 15.

Pin 15

Printed circuit board (FR4, 1.5mm thick, one layer 70 m, 6cm 2 active heatsink area) as a reference for max.power dissipation P tot , nominal load current I L(NOM) and thermal resistance R thja

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Semiconductor Group 16 2003 Oct 01

Published byInfineon Technologies AG , St.-Martin-Strasse 53,

D-81669 Mnchen Infineon Technologies AG 2001All Rights Reserved.

Attention please!The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions andcharts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office inGermany or our Infineon Technologies Representatives worldwide (see address list).

Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contactyour nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of InfineonTechnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or toaffect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body,or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user orother persons may be endangered.

BTS711L1

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