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Rev. 1.4 1 BSS123

SIPMOS Small-Signal-TransistorProduct SummaryV DS 100 V

R DS(on) 6

I D 0.17 A

Feature N-Channel Enhancement mode Logic Level dv /d t rated PG-SOT23

1

2

3

VPS05161

Gatepin1

Drainpin 3

Sourcepin 2

Marking

SAs

SAs

Type Package Pb-free Tape and Reel Information

BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel

BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel

Maximum Ratings , at T j = 25 C, unless otherwise specifiedParameter Symbol Value Unit

Continuous drain current

T A=25C

T A=70C

I D

0.17

0.14

A

Pulsed drain current

T A=25C

I D puls 0.68

Reverse diode d v /d t

I S=0.17A, V DS =80V, d i /d t =200A/s, T jmax =150C

dv /d t 6 kV/s

Gate source voltage V GS 20 V

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1a

Power dissipation

T A=25C

P tot 0.36 W

Operating and storage temperature T j , T stg -55... +150 C

IEC climatic category; DIN IEC 68-1 55/150/56

Qualified according to AEC Q101

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Thermal Characteristics

Parameter Symbol Values Unitmin. typ. max.

Characteristics

Thermal resistance, junction - ambient

at minimum footprint

R thJA - - 350 K/W

Electrical Characteristics , at T j = 25 C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V GS =0, I D=250A

V (BR)DSS 100 - - V

Gate threshold voltage, V GS = V DSI D=50A

V GS(th) 0.8 1.4 1.8

Zero gate voltage drain current

V DS

=100V, V GS

=0, T j=25C

V DS=100V, V GS =0, T j=150C

I DSS

-

-

-

-

0.01

5

A

Gate-source leakage current

V GS =20V, V DS =0

I GSS - - 10 nA

Drain-source on-state resistance

V GS =4.5V, I D=0.13A

R DS(on) - 4 10

Drain-source on-state resistance

V GS =10V, I D=0.17A

R DS(on) - 3 6

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Electrical Characteristics , at T j = 25 C, unless otherwise specified

Parameter Symbol Conditions Values Unitmin. typ. max.

Dynamic Characteristics

Transconductance g fs V DS 2*I D*R DS(on)max ,

I D=0.14A

0.09 0.19 - S

Input capacitance C iss V GS =0, V DS=25V,

f =1MHz

- 55 69 pF

Output capacitance C oss - 8.5 10.6

Reverse transfer capacitance C rss - 5 6.3

Turn-on delay time t d(on) V DD=50V, V GS =10V,

I D=0.17A, R G=6

- 2.7 4 ns

Rise time t r - 3.1 4.6

Turn-off delay time t d(off) - 9.9 14.8

Fall time t f - 25 37

Gate Charge Characteristics

Gate to source charge Q gs V DD=80V, I D =0.17A - 0.055 0.082 nC

Gate to drain charge Q gd - 0.77 1.15

Gate charge total Q g V DD=80V, I D =0.17A,

V GS =0 to 10V

- 1.78 2.67

Gate plateau voltage V (plateau) V DD=80V, I D = 0.17 A - 2.6 - V

Reverse Diode

Inverse diode continuous

forward current

I S T A=25C - - 0.17 A

Inv. diode direct current, pulsed I SM - - 0.68

Inverse diode forward voltage V SD V GS =0, I F = I S - 0.81 1.2 VReverse recovery time t rr V R=50V, I F=l S ,

di F /d t =100A/s

- 27.6 41.1 ns

Reverse recovery charge Q rr - 10.5 15.7 nC

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1 Power dissipation

P tot = f (T A)

0 20 40 60 80 100 120 C 160

TA

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

0.32

W0.38

BSS123

P t o t

2 Drain current

I D = f (T A)parameter: V GS 10 V

0 20 40 60 80 100 120 C 160T

A

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

A

0.18BSS123

I D

3 Safe operating area

I D = f ( V DS )

parameter : D = 0 , T A = 25 C

10 0 10 1 10 2 10 3V

V DS

-310

-210

-110

010

110

A

BSS123

I D R D S

( o n )

= V D S

/ I D

DC

10 ms

1 ms

t p = 120.0s

4 Transient thermal impedance

Z thJA = f (t p)

parameter : D = t p / T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0s

t p

-310

-210

-110

010

110

210

310K/W

BSS123

Z t h J A

single pulse0.01

0.02

0.05

0.10

0.20

D = 0.50

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5 Typ. output characteristic

I D = f (V DS )parameter: T j = 25 C, V GS

0 0.5 1 1.5 2 2.5 3 3.5 4 V 5

V DS

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0.55

0.6

A0.7

I D

10V5V4.5V4.1V3.9V3.7V3.5V3.1V2.9V2.3V

6 Typ. drain-source on resistance

R DS(on) = f (I D)parameter: T j = 25 C, V GS

0 0.1 0.2 0.3 0.4 0.5 A 0.7

I D

0

2

4

6

8

10

12

14

16

20

R D S ( o n

)

2.3V2.9V3.1V3.5V3.7V3.9V4.1V4.5V5.0V

10V

7 Typ. transfer characteristics

I D= f ( V GS ); V DS 2 x I D x R DS(on)maxparameter: T j = 25 C

0 0.5 1 1.5 2 2.5 3 3.5 4 V 5

V GS

0

0.1

0.2

0.3

0.4

0.5

A

0.7

I D

8 Typ. forward transconductance

g fs = f(I D)

parameter: T j = 25 C

0 0.1 0.2 0.3 0.4 0.5 A 0.7

I D

0

0.05

0.1

0.15

0.2

0.25

0.3

S

0.4

g f s

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9 Drain-source on-state resistance

R DS(on) = f (T j)parameter : I D = 0.17 A, V GS = 10 V

-60 -20 20 60 100 C 180

T j

0

2

4

6

8

10

12

14

16

18

20

24

BSS123

R D S ( o n

)

typ

98%

10 Typ. gate threshold voltage

V GS(th) = f (T j)parameter: V GS = V DS ; I D =50A

-60 -20 20 60 100 C 160T j

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

V2.2

V G S ( t h )

2%

typ.

98%

11 Typ. capacitances

C = f (V DS )

parameter: V GS =0, f =1 MHz, T j = 25 C

0 4 8 12 16 20 24 28 V 36

V DS

010

110

210

310

pF

C

C rss

C iss

C oss

12 Forward character. of reverse diode

I F = f (VSD )

parameter: T j

0 0.4 0.8 1.2 1.6 2 2.4 V 3

V SD

-310

-210

-110

010

A

BSS123

I F

T j = 25 C typ

T j = 25 C (98%)

T j = 150 C typ

T j = 150 C (98%)

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13 Typ. gate charge

V GS = f (Q G ); parameter: V DS , I D = 0.17 A pulsed, T j = 25 C

0 0.4 0.8 1.2 1.6 2 nC 2.8

Q G

0

2

4

6

8

10

12

V

16BSS123

V G S

0.2 V DS max

0.5 V DS max

0.8 V DS max

14 Drain-source breakdown voltage

V (BR)DSS = f (T j)

-60 -20 20 60 100 C 180

T j

90

92

94

96

98

100

102

104

106

108

110

112

114

V120

BSS123

V ( B R ) D S S

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Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device,Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rightsof any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office ( www.infineon.com ).

WarningsDue to technical requirements, components may contain dangerous substances. For informationon the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only withthe express written approval of Infineon Technologies, if a failure of such components canreasonably be expected to cause the failure of that life-support device or system or to affectthe safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the useror other persons may be endangered.

2010-05-12Pag 8

BSS123