BSM150GT120DN2

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1 Nov-24-1997 BSM 150 GT 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type V CE I C Package Ordering Code BSM 150 GT 120 DN2 1200V 200A TRIPACK C67070-A2518-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V CE 1200 V Collector-gate voltage R GE = 20 kV CGR 1200 Gate-emitter voltage V GE ± 20 DC collector current T C = 25 °C T C = 80 °C I C 150 200 A Pulsed collector current, t p = 1 ms T C = 25 °C T C = 80 °C I Cpuls 300 400 Power dissipation per IGBT T C = 25 °C P tot 1250 W Chip temperature T j + 150 °C Storage temperature T stg -40 ... + 125 Thermal resistance, chip case R thJC 0.12 K/W Diode thermal resistance, chip case R thJCD 0.28 Insulation test voltage, t = 1min. V is 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

description

BSM module

Transcript of BSM150GT120DN2

  • 1 Nov-24-1997

    BSM 150 GT 120 DN2

    IGBT Power Module

    Solderable Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate

    Type VCE IC Package Ordering CodeBSM 150 GT 120 DN2 1200V 200A TRIPACK C67070-A2518-A67

    Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltageRGE = 20 k

    VCGR 1200

    Gate-emitter voltage VGE 20DC collector currentTC = 25 CTC = 80 C

    IC

    150 200

    A

    Pulsed collector current, tp = 1 msTC = 25 CTC = 80 C

    ICpuls

    300 400

    Power dissipation per IGBTTC = 25 C

    Ptot 1250

    W

    Chip temperature Tj + 150 CStorage temperature Tstg -40 ... + 125

    Thermal resistance, chip case RthJC 0.12 K/WDiode thermal resistance, chip case RthJCD 0.28Insulation test voltage, t = 1min. Vis 2500 VacCreepage distance - 16 mmClearance - 11DIN humidity category, DIN 40 040 - F secIEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

  • 2 Nov-24-1997

    BSM 150 GT 120 DN2

    Electrical Characteristics, at Tj = 25 C, unless otherwise specifiedParameter Symbol Values Unit

    min. typ. max.

    Static CharacteristicsGate threshold voltageVGE = VCE, IC = 6 mA

    VGE(th) 4.5 5.5 6.5

    V

    Collector-emitter saturation voltageVGE = 15 V, IC = 150 A, Tj = 25 CVGE = 15 V, IC = 150 A, Tj = 125 C

    VCE(sat)

    -

    -

    3.1 2.5

    3.7 3

    Zero gate voltage collector currentVCE = 1200 V, VGE = 0 V, Tj = 25 CVCE = 1200 V, VGE = 0 V, Tj = 125 C

    ICES

    -

    -

    8 2

    -

    2.8mA

    Gate-emitter leakage currentVGE = 20 V, VCE = 0 V

    IGES- - 320

    nA

    AC CharacteristicsTransconductanceVCE = 20 V, IC = 150 A

    gfs 62 - -

    S

    Input capacitanceVCE = 25 V, VGE = 0 V, f = 1 MHz

    Ciss- 10 -

    nF

    Output capacitanceVCE = 25 V, VGE = 0 V, f = 1 MHz

    Coss- 1.5 -

    Reverse transfer capacitanceVCE = 25 V, VGE = 0 V, f = 1 MHz

    Crss- 0.8 -

  • 3 Nov-24-1997

    BSM 150 GT 120 DN2

    Electrical Characteristics, at Tj = 25 C, unless otherwise specifiedParameter Symbol Values Unit

    min. typ. max.

    Switching Characteristics, Inductive Load at Tj = 125 CTurn-on delay timeVCC = 600 V, VGE = 15 V, IC = 150 ARGon = 5.6

    td(on)

    - 200 400

    ns

    Rise timeVCC = 600 V, VGE = 15 V, IC = 150 ARGon = 5.6

    tr

    - 100 200Turn-off delay timeVCC = 600 V, VGE = -15 V, IC = 150 ARGoff = 5.6

    td(off)

    - 600 900Fall timeVCC = 600 V, VGE = -15 V, IC = 150 ARGoff = 5.6

    tf

    - 70 100

    Free-Wheel DiodeDiode forward voltageIF = 150 A, VGE = 0 V, Tj = 25 CIF = 150 A, VGE = 0 V, Tj = 125 C

    VF

    -

    -

    1.8 2.3

    -

    2.8V

    Reverse recovery timeIF = 150 A, VR = -600 V, VGE = 0 VdiF/dt = -1500 A/s, Tj = 125 C

    trr

    - 0.4 -

    s

    Reverse recovery chargeIF = 150 A, VR = -600 V, VGE = 0 VdiF/dt = -1500 A/sTj = 25 CTj = 125 C

    Qrr

    -

    -

    22 8

    -

    -

    C

  • 4 Nov-24-1997

    BSM 150 GT 120 DN2

    Power dissipation Ptot = (TC)parameter: Tj 150 C

    0 20 40 60 80 100 120 C 160TC

    0 100

    200

    300

    400

    500

    600

    700

    800

    900

    1000

    1100

    W

    1300

    Ptot

    Safe operating area IC = (VCE)parameter: D = 0, TC = 25C , Tj 150 C

    0 10

    1 10

    2 10

    3 10

    A

    IC

    10 0 10 1 10 2 10 3 V VCE

    DC

    10 ms

    1 ms

    100 s

    tp = 18.0s

    Collector current IC = (TC)parameter: VGE 15 V , Tj 150 C

    0 20 40 60 80 100 120 C 160TC

    0

    20

    40

    60

    80

    100

    120

    140

    160

    180

    A

    220

    IC

    Transient thermal impedance IGBTZth JC = (tp)parameter: D = tp / T

    -4 10

    -3 10

    -2 10

    -1 10

    0 10

    K/W

    ZthJC

    10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp

    single pulse0.01

    0.02

    0.05

    0.10

    0.20

    D = 0.50

  • 5 Nov-24-1997

    BSM 150 GT 120 DN2

    Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C

    0 1 2 3 V 5 VCE

    0 20

    40

    60

    80

    100

    120

    140

    160

    180

    200

    220

    240

    260

    A

    300

    IC

    17V 15V 13V 11V 9V 7V

    Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 125 C

    0 1 2 3 V 5 VCE

    0 20

    40

    60

    80

    100

    120

    140

    160

    180

    200

    220

    240

    260

    A

    300

    IC

    17V 15V 13V 11V 9V 7V

    Typ. transfer characteristics

    IC = f (VGE) parameter: tp = 80 s, VCE = 20 V

    0 2 4 6 8 10 V 14 VGE

    0 20

    40

    60

    80

    100

    120

    140

    160

    180

    200

    220

    240

    260

    A

    300

    IC

  • 6 Nov-24-1997

    BSM 150 GT 120 DN2

    Typ. gate charge VGE = (QGate)parameter: IC puls = 150 A

    0 200 400 600 800 1100QGate

    0

    2

    4

    6

    8

    10

    12

    14

    16

    V

    20

    VGE

    800 V600 V

    Typ. capacitancesC = f (VCE) parameter: VGE = 0 V, f = 1 MHz

    0 5 10 15 20 25 30 V 40 VCE

    -1 10

    0 10

    1 10

    2 10

    nF

    C

    Ciss

    Coss

    Crss

    Reverse biased safe operating areaICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V

    0 200 400 600 800 1000 1200 V 1600 VCE

    0.0

    0.5

    1.0

    1.5

    2.5

    ICpuls/IC

    Short circuit safe operating areaICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH

    0 200 400 600 800 1000 1200 V 1600 VCE

    0

    2

    4

    6

    8

    12

    ICsc/IC

  • 7 Nov-24-1997

    BSM 150 GT 120 DN2

    Typ. switching time

    I = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 5.6

    0 50 100 150 200 250 300 A 400 IC

    1 10

    2 10

    3 10

    4 10

    ns

    t

    tdon tr

    tdoff

    tf

    Typ. switching time t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 150 A

    0 10 20 30 40 60 RG

    1 10

    2 10

    3 10

    4 10

    ns

    t

    tdon tr

    tdoff

    tf

    Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 5.6

    0 50 100 150 200 250 300 A 400 IC

    0

    20

    40

    60

    80

    mWs

    120

    E Eon

    Eoff

    Typ. switching losses E = f (RG) , inductive load , Tj = 125C par.: VCE = 600V, VGE = 15 V, IC = 150 A

    0 10 20 30 40 60 RG

    0

    20

    40

    60

    80

    mWs

    120

    E

    Eon

    Eoff

  • 8 Nov-24-1997

    BSM 150 GT 120 DN2

    Forward characteristics of fast recoveryreverse diode

    IF = f(VF) parameter: Tj

    0.0 0.5 1.0 1.5 2.0 V 3.0 VF

    0 20

    40

    60

    80

    100

    120

    140

    160

    180

    200

    220

    240

    260

    A

    300

    IF

    Tj=25C=125CjT

    Transient thermal impedance DiodeZth JC = (tp)parameter: D = tp / T

    -4 10

    -3 10

    -2 10

    -1 10

    0 10

    K/W

    ZthJC

    10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp

    single pulse 0.01

    0.02

    0.05

    0.10

    0.20

    D = 0.50

  • 9 Nov-24-1997

    BSM 150 GT 120 DN2

    Circuit Diagram

    Package Outlines Dimensions in mmWeight: 300 g

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