7/27/2019 BPW76 Data Sheets

1/6

BPW76Vishay Semiconductors

1 (6)Rev. 2, 20-May-99

www.vishay.comDocument Number 81526

Silicon NPN Phototransistor

Description

BPW76 is a high sensitive silicon NPN epitaxial planarphototransistor in a standard TO18 hermeticallysealed metal case.Its flat glass window makes it ideal for applications withexternal optics.A base terminal is available to enable biasing and sen-sitivity control.

Features

DHermetically sealed case

DFlat window

D

Very wide viewing angle = 40

DExact central chip alignment

DLong range light barrier with an additional optics

DBase terminal available

DHigh photo sensitivity

DSuitable for visible and near infrared radiation

DSelected into sensitivity groups

94 8401

ApplicationsDetector in electronic control and drive circuits

Absolute Maximum RatingsTamb = 25 _ C

Parameter Test Conditions Symbol Value Unit

Collector Base Voltage VCBO 80 V

Collector Emitter Voltage VCEO 70 V

Emitter Base Voltage VEBO 5 V

Collector Current IC 50 mA

Peak Collector Current tp/T = 0.5, tpx 10 ms ICM 100 mA

Total Power Dissipation Tambx

25

C Ptot 250 mWJunction Temperature Tj 125 C

Storage Temperature Range Tstg 55...+125 C

Soldering Temperature tx

5 s Tsd 260 C

Thermal Resistance Junction/Ambient RthJA 400 K/W

Thermal Resistance Junction/Case RthJC 150 K/W

7/27/2019 BPW76 Data Sheets

2/6

BPW76Vishay Semiconductors

2 (6) Rev. 2, 20-May-99

www.vishay.com Document Number 81526

Basic CharacteristicsTamb = 25_ C

Parameter Test Conditions Symbol Min Typ Max Unit

Collector Emitter Breakdown

Voltage

IC = 1 mA V(BR)CEO

70 V

Collector Dark Current VCE = 20 V, E = 0 ICEO 1 100 nA

Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 6 pF

Angle of Half Sensitivity 40 deg

Wavelength of Peak Sensitivityl p 850 nm

Range of Spectral Bandwidthl 0.5 620...980 nm

Collector Emitter SaturationVoltage

Ee = 1 mW/cm2,

l= 950 nm, IC = 0.1 mA

VCEsat 0.15 0.3 V

TurnOn Time VS = 5 V, IC = 5 mA,RL = 100 W

ton 6 m s

TurnOff Time VS = 5 V, IC = 5 mA,

RL = 100W

toff 5 m s

CutOff Frequency VS = 5 V, IC = 5 mA,RL = 100 W

fc 110 kHz

Type Dedicated CharacteristicsTamb = 25_ C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Collector Light Current Ee=1mW/cm , BPW76A Ica 0.4 0.6 0.8 mAl=950nm, VCE=5V BPW76B Ica 0.6 1.2 mA

Typical Characteristics (Tamb = 25_ C unless otherwise specified)

0 25 50 75 100

0

200

400

800

150

94 8342

600

125

Tamb Ambient Temperature ( C )

P

TotalPow

erDissipation(mW)

tot

RthJC

RthJA

Figure 1. Total Power Dissipation vs.Ambient Temperature

94 8343

20

I

CollectorDarkCurrent(nA)

CEO

Tamb Ambient Temperature ( C )

100

101

102

103

104

106

105

15050 100

VCE=20V

E=0

Figure 2. Collector Dark Current vs. Ambient Temperature

7/27/2019 BPW76 Data Sheets

3/6

BPW76Vishay Semiconductors

3 (6)Rev. 2, 20-May-99

www.vishay.comDocument Number 81526

94 8344

0 50 100 150

Tamb Ambient Temperature ( C )

0

0.5

1.0

1.5

2.0

3.5

I

RelativeCollectorCurrent

carel

2.5

3.0

VCE=5V

Ee=1mW/cm2

l =950nm

Figure 3. Relative Collector Current vs.Ambient Temperature

0.01 0.1 10.001

0.01

0.1

1

10

I

CollectorLightCurrent(mA)

ca

Ee Irradiance ( mW/ cm2 )

10

94 8345

VCE=5V

l =950nm

Figure 4. Collector Light Current vs. Irradiance

0.1 1 10

0.01

0.1

1

I

CollectorLightCurrent(mA)

ca

VCE Collector Emitter Voltage ( V )

100

94 8346

Ee=1mW/cm2

0.5mW/cm2

0.2mW/cm2

0.1mW/cm2

0.05mW/cm2

BPW76A

l =950nm

Figure 5. Collector Light Current vs.Collector Emitter Voltage

0.1 1 10

0

4

8

12

16

20

C

CollectorEmitterCa

pacitance(pF)

CEO

VCE Collector Emitter Voltage ( V )

100

94 8247

f=1MHz

Figure 6. Collector Emitter Capacitance vs.Collector Emitter Voltage

0 4 8 12 16

94 8253

0

2

4

6

8

12

t

/t

Turnon/TurnoffTime(

s)

off

IC Collector Current ( mA )

10

m

on

VCE=5V

RL=100 W

l=950nm

toff

ton

Figure 7. Turn On/Turn Off Time vs. Collector Current

400 600 1000

0

0.2

0.4

0.6

0.8

1.0

S(

)

RelativeSpectralSensitivity

rel

l Wavelength ( nm )94 8348

l

800

Figure 8. Relative Spectral Sensitivity vs. Wavelength

7/27/2019 BPW76 Data Sheets

4/6

BPW76Vishay Semiconductors

4 (6) Rev. 2, 20-May-99

www.vishay.com Document Number 81526

0.4 0.2 0 0.2 0.4

S

RelativeSen

sitivity

rel

0.6

94 8347

0.6

0.9

0.8

0

30

10

20

40

50

60

70

800.7

1.0

Figure 9. Relative Radiant Sensitivity vs.Angular Displacement

7/27/2019 BPW76 Data Sheets

5/6

BPW76Vishay Semiconductors

5 (6)Rev. 2, 20-May-99

www.vishay.comDocument Number 81526

Dimensions in mm

96 12175

7/27/2019 BPW76 Data Sheets

6/6