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Bottom-up Technology
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Bottom-up Technology Toshitake Takahashi
description
Bottom-up Technology. Toshitake Takahashi. A. B. C. Exfoliate. PmPV Suspension in DCE solvent. E. D. Centrifuge. Background on the synthesis of graphene sheet and graphene nanoribbon. Fabrication method so far. - Peel-off method Epitaxial growth Chemically. - PowerPoint PPT Presentation
Transcript of Bottom-up Technology
Bottom-up Technology
Toshitake Takahashi
Background on the synthesis of graphene sheet and graphene nanoribbon
W. A. de Heer, et. al. Science 2006, 312, 1191.
- Peel-off method- Epitaxial growth- Chemically
AB
PmPV Suspension
in DCE solvent
C
Centrifuge
D
E
Exfoliate
Li, X. L. et al. Science 319, 1229–1232 (2008)
K. S. Novoselov, et al. Science 2004, 306, 666.
Fabrication method so far
Required new approach for Large scale application
- PMMA- MWCNT film was peeled off in KOH solution
-Top side wall of MWCNT were etched faster and removed by plasma
Making GNR from MWCNT
Diameter distribution of pristine MWCNT
Width and height distribution of GNR
Diameter/Width/Height distribution
16 nm-wide GNR devicemeasured in vacuum
-After electrical annealing-Symmetric electron and holetransport
7 nm-wide GNR devicemeasured in air
-p-type behavior due to Physisorbed O2
Electrical property of GNR
GNR fabrication with nanowire as etching mask
Electrical characteristic of GNR
-Transfer characteristic is strongly dependent on width-Opening of bandgap due to enhanced carrier confinementand edge effect as GNR width is reduced
