Bolometer Fabrication
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Bolometer Fabrication P- Si Substrate Ti Arm Al Mirror SiN Insulation Layer PI 2737 Sacrificial Layer SiGe Au Absorber Au Contact Ashing of PI2737 in Oxygen Plasma
description
Bolometer Fabrication. Ashing of PI2737 in Oxygen Plasma. Au Contact. Au Absorber. SiGe. PI 2737 Sacrificial Layer. Al Mirror. Ti Arm. SiN Insulation Layer. P- Si Substrate. Completed Bolometer : SEM Picture. - PowerPoint PPT Presentation
Transcript of Bolometer Fabrication
Bolometer Fabrication
P- Si Substrate
Ti ArmAl MirrorSiN Insulation Layer
PI 2737 Sacrificial Layer
SiGeAu Absorber Au Contact
Ashing of PI2737 in Oxygen Plasma
Bolometer: Resistivity & Temperature Coefficient of Resistance (TCR) Variation With
Temperature
40
50
60
70
80
90
-1.5
-1.4
-1.3
-1.2
-1.1
-1
260 270 280 290 300 310 320 330
Res
ista
nce
(K
)T
CR
(%/K
)
Temperature (K)
Bolometer: Current voltage (I-V) Characteristics
-3
-2
-1
0
1
2
3
-3
-2
-1
0
1
2
3
-200 -150 -100 -50 0 50 100 150 200
In Air
In VacuumVol
tage
(V
)
Current (A)
-0.4
-0.3-0.2-0.1
00.1
0.20.30.4
-20 -15 -10 -5 0 5 10 15 20
Vol
tage
(V
)
Current ( A)
Bolometer: Noise Analysis at Different Bias Currents
10-11
10-10
10-9
10-8
10-7
10-6
1 10 100 1000 104 105
0.4 A1 A2 AN
oise
Vol
tage
PSD
(V
2 /Hz)
Frequency (Hz)
Bolometer: Noise Analysis of two bolometers and the corresponding Normalized Hoogie
Coefficient for 1/f-noise (αH/N) determined at 10 Hz frequency
Device
Noise Voltage PSD @ 250 Hz For 1 μA bias current
[V2/Hz]αH/N
10C52 2.60×10-9 5.19×10-5
10C51 1.17×10-7 6.82×10-5
fN
RIS bHv
22
Where is noise voltage power spectral desity in V2/Hz
Ib is the bias current
R is the resistance of the device
N is the number of fluctuators
vS
This material is based in part by work supported by the National Science Foundation ECS-0322900
