BLF177_N

8/10/2019 BLF177_N

http://slidepdf.com/reader/full/blf177n 1/19

IMPORTANT NOTICEDear customer,

As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.

http://www.philips.semiconductors.com use http://www.nxp.com

http://www.semiconductors.philips.com use http://www.nxp.com (Internet)

[email protected] use [email protected](email)

The copyright notice at the bottom of each page (or elsewhere in the document,depending on the version)- © Koninklijke Philips Electronics N.V. (year). All rights reserved -is replaced with:- © NXP B.V. (year). All rights reserved. -

If you have any questions related to the data sheet, please contact our nearest sales

ofce via e-mail or phone (details via [email protected]). Thank you for yourcooperation and understanding,

NXP Semiconductors

BLF177HF/VHF power MOS transistorRev. 06 — 24 January 2007 Product data sheet

8/10/2019 BLF177_N


NXP Semiconductors Product specication

HF/VHF power MOS transistor BLF177

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Designed for industrial and militaryapplications in the HF/VHFfrequency range.

DESCRIPTION

Silicon N-channel enhancementmode vertical D-MOS transistorencapsulated in a 4-lead, SOT121Bflanged package, with a ceramic cap.All leads are isolated from the flange.

A marking code, showing gate-sourcevoltage (V GS ) information is providedfor matched pair applications. Referto the handbook 'General' section forfurther information.

PINNING

PIN DESCRIPTION

1 drain

2 source

3 gate

4 source

PIN CONFIGURATION

CAUTION

This product is supplied in anti-static packing to prevent damage caused byelectrostatic discharge during transport and handling. For further information,refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe providedthat the BeO disc is not damaged. All persons who handle, use or dispose ofthis product should be aware of its nature and of the necessary safetyprecautions. After use, dispose of as chemical or special waste according tothe regulations applying at the location of the user. It must never be thrownout with the general or domestic waste.

ndbook, halfpage

MLA876

4 3

21

s

d

g

MBB072

Fig.1 Simplified outline (SOT121B) and symbol.

QUICK REFERENCE DATARF performance at T h = 25 °C in a common source test circuit.

MODE OFOPERATION

f(MHz)

VDS(V)

P L(W)

Gp(dB)

η D(%)

d 3(dB)

d 5(dB)

SSB class-AB 28 50 150 (PEP) >20 >35 <−30 <−30

CW class-B 108 50 150 typ. 19 typ. 70 − −

Rev. 06 - 24 January 2007 2 of 19

8/10/2019 BLF177_N


8/10/2019 BLF177_N




CHARACTERISTICST j = 25 °C unless otherwise specied.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage I D = 100 mA; V GS = 0 125 − − V

IDSS drain-source leakage current V GS = 0; V DS = 5 0 V − − 2.5 mA

IGSS gate-source leakage current V GS = ±20 V; VDS = 0 − − 1 µA

VGSth gate-source threshold voltage I D = 50 mA; V DS = 10 V 2 − 4.5 V

∆VGS gate-source voltage difference ofmatched pairs

ID = 50 mA; V DS = 1 0 V − − 100 mV

g fs forward transconductance I D = 5 A; V DS = 10 V 4.5 6.2 − S

RDSon drain-source on-state resistance I D = 5 A; V GS = 1 0 V − 0.2 0.3 Ω

IDSX on-state drain current V GS = 10 V; V DS = 1 0 V − 25 − A

C is input capacitance V GS = 0; V DS = 50 V; f = 1 MHz − 480 − pF

Cos output capacitance V GS = 0; V DS = 50 V; f = 1 MHz − 190 − pF

C rs feedback capacitance V GS = 0; V DS = 50 V; f = 1 MHz − 14 − pF

VGS group indication

GROUP

LIMITS(V) GROUP

LIMITS(V)

MIN. MAX. MIN. MAX.

A 2.0 2.1 O 3.3 3.4B 2.1 2.2 P 3.4 3.5

C 2.2 2.3 Q 3.5 3.6

D 2.3 2.4 R 3.6 3.7

E 2.4 2.5 S 3.7 3.8

F 2.5 2.6 T 3.8 3.9

G 2.6 2.7 U 3.9 4.0

H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2

K 2.9 3.0 X 4.2 4.3

L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5

N 3.2 3.3

Rev. 06 - 24 January 2007 4 of 19

8/10/2019 BLF177_N




handbook, halfpage 0

−5

MGP090

10 −1 1 1010 −2

−4

−3

−2

−1

ID (A)

T.C.(mV/K)

Fig.4 Temperature coefficient of gate-sourcevoltage as a function of drain current; typicalvalues.

VDS = 10 V; valid for T h = 25 to 70 °C.

handbook, halfpage

0

30

20

10

05 10 15

MGP091

ID(A)

VGS (V)

Fig.5 Drain current as a function of gate-sourcevoltage; typical values.

VDS = 10 V.

handbook, halfpage

0

400

300

200

10050 100 150

MGP092

RDSon(mΩ)

T j (° C)

Fig.6 Drain-source on-state resistance as afunction of junction temperature; typical

values.

ID = 5 A; V GS = 10 V.

handbook, halfpage

0

1200

800

400

020 40

Cis

Cos

60VDS (V)

C(pF)

MBK408

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

VGS = 0; f = 1 MHz.

Rev. 06 - 24 January 2007 5 of 19

8/10/2019 BLF177_N


8/10/2019 BLF177_N




handbook, halfpage

0

30

20

10

0100 200

MGP096

Gp(dB)

P L (W) PEP

Fig.9 Power gain as a function of load power;typical values.

Class-AB operation; V DS = 50 V; IDQ = 0.7 A;RGS = 5 Ω ; f1 = 28.000 MHz; f 2 = 28.001 MHz.

handbook, halfpage

0

60

40

20

0100 200

MGP094

η D(%)

PL (W) PEP

Fig.10 Two tone efficiency as a function of loadpower; typical values.


handbook, halfpage

0

−20

−40

−30

−50

−60100 200

MGP097

d3(dB)

PL (W) PEP

Fig.11 Third order intermodulation distortion as a

function of load power; typical values.


handbook, halfpage

0

−20

−40

−30

−50

−60100 200

MGP098

d5(dB)

PL (W) PEP

Fig.12 Fifth order intermodulation distortion as a

function of load power; typical values.


Rev. 06 - 24 January 2007 7 of 19

8/10/2019 BLF177_N




handbook, full pagewidth

MGP095

input50 Ω

C1

C5C6

C8

L1 L2

D.U.T. L3 L6

L4R2R1

R3R4

C4C2

+VG

C3

C13

C10

C9

C11

C12

C15

+VD

C14

L5

R5 C7

output50 Ω

Fig.13 Test circuit for class-AB operation .

Rev. 06 - 24 January 2007 8 of 19

8/10/2019 BLF177_N




List of components class-AB test circuit (see Fig.13)

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric ( εr = 2.2),thickness 1.6 mm (Rogers 5880) .

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C4, C13, C14 lm dielectric trimmer 7 to 100 pF 2222 809 07015

C2 multilayer ceramic chip capacitor(note 1)

56 pF

C3, C11 multilayer ceramic chip capacitor(note 1)

62 pF

C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104

C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104

C8 electrolytic capacitor 2.2 µF, 63 V


20 pF


100 pF


150 pF

L1 5 turns enamelled 0.7 mm copperwire

133 nH length 4.5 mm; int.dia. 6 mm; leads2 × 5 mm

L2, L3 stripline (note 2) 41.1 Ω length 13 × 6 mm


236 nH length 12.5 mm;int. dia. 8 mm;

leads 2 × 5 mmL5 grade 3B Ferroxcube wideband HF

choke4312 020 36642

L6 5 turns enamelled 2 mm copper wire 170 nH length 11.5 mm;int. dia. 8 mm;leads 2 × 5 mm

R1, R2 metal lm resistor 10 Ω, 1 W

R2 metal lm resistor 10 k Ω, 0.4 W

R3 metal lm resistor 1 M Ω, 0.4 W

R5 metal lm resistor 10 k Ω, 1 W

Rev. 06 - 24 January 2007 9 of 19

8/10/2019 BLF177_N




handbook, halfpage

0

10

5

0

−510 20 30

MGP099

Zi(Ω)

ri

xi

f (MHz)

Fig.14 Input impedance as a function of frequency(series components); typical values.

Class-AB operation; V DS = 50 V; IDQ = 0.7 A;P L = 150 W (PEP); R GS = 6.25 Ω ; R L = 6.25 Ω.

handbook, halfpage

0

30

20

10

010 20 30

MGP100

Gp(dB)

f (MHz)

Fig.15 Power gain as a function of frequency;typical values.

Class-AB operation; V DS = 50 V; IDQ = 0.7 A;P L = 150 W (PEP); R GS = 6.25 Ω ; R L = 6.25 Ω.

APPLICATION INFORMATION FOR CLASS-B OPERATIONRF performance in CW operation in a common source class-B test circuit (see Fig.19) .Th = 25 °C; R th mb-h = 0.2 K/W; R GS = 15.8 Ω unless otherwise specied.

MODE OFOPERATION

f(MHz)

VDS(V)

IDQ(A)

P L(W)

Gp(dB)

η D(%)

CW, class-B 108 50 0.1 150 typ. 19 typ. 70

Rev. 06 - 24 January 2007 10 of 19

8/10/2019 BLF177_N




handbook, halfpage

0 100 200

30

10

0

20

MGP101

Gp(dB)

P L (W)

Fig.16 Power gain as a function of load power;typical values.

Class-B operation; V DS = 50 V; IDQ = 100 mA;RGS = 15.8 Ω; f = 108 MHz.

handbook, halfpage

0

100

50

0100 200

MGP102

η D(%)

P L (W)

Fig.17 Two tone efficiency as a function of loadpower; typical values.


handbook, halfpage

0 1 2 4

200

0

100

3

MGP103

P L(W)

P IN (W)

Fig.18 Load power as a function of input power;

typical values.


Rev. 06 - 24 January 2007 11 of 19

8/10/2019 BLF177_N





MGP104

input50 Ω

C1

C7C6 C11

C19

L1 L3

D.U.T.BLF177 L4 L8

L5

R2R1

R3

R5

R4

C2 C5

C3 C4

C16C14

C13 C15

C17

+VD

L7 C18

L6

R6 C12

C9 C10

output50 ΩL2

C8

Fig.19 Test circuit for class-B operation at 108 MHz.

Rev. 06 - 24 January 2007 12 of 19

8/10/2019 BLF177_N




List of components class-B test circuit (see Fig.19)

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric ( εr = 2.2),thickness 1.6 mm (Rogers 5880) .

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C16, C18 lm dielectric trimmer 2.5 to 20 pF 2222 809 07004


20 pF


62 pF

C6, C7, C9, C10 multilayer ceramic chip capacitor(note 1)

1 nF

C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104

C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103

C12 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104C13, C14 multilayer ceramic chip capacitor

(note 1)36 pF


12 pF


5.6 pF

C19 electrolytic capacitor 4.4 µF, 63 V 2222 030 28478


22 nH length 5.5 mm;int. dia. 3 mm;leads 2 × 5 mm

L2 stripline (note 2) 64.7 Ω 31 × 3 mmL3, L4 stripline (note 2) 41.1 Ω 10 × 6 mm


122 nH length 13.8 mm;int. dia. 6 mm;leads 2 × 5 mm

L6 grade 3B Ferroxcube wideband HFchoke

4312 020 36642

L7 1 turn enamelled 1.6 mm copperwire

16.5 nH int. dia. 9 mm;leads 2 × 5 mm


34.4 nH length 3.9 mm;int. dia. 6 mm;

leads 2 × 5 mmR1, R2 metal lm resistor 31.6 Ω, 1 W

R3 metal lm resistor 1 k Ω, 0.4 W

R4 cermet potentiometer 5 k Ω

R5 metal lm resistor 44.2 k Ω, 0.4 W

R6 metal lm resistor 10 Ω, 1 W

Rev. 06 - 24 January 2007 13 of 19

8/10/2019 BLF177_N





MGP105

174

70

strap

strap straprivet

C1 C2

C3 C4

C8

C6C7

C5

L2L1

L3

R1 R2

R3

R4

L4 L7

L5

L8C14

C13

C12

+VDR6

L6

R5

C10C11

C9

C15

C19

C16 C18

C17

Fig.20 Component layout for 108 MHz class-B test circuit.

Dimensions in mm.The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground.Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for adirect contact between upper and lower sheets.

Rev. 06 - 24 January 2007 14 of 19

8/10/2019 BLF177_N




handbook, halfpage

0 200

4

−6

−4

MGP107

−2

0

2

100

ri

xi

Zi(Ω)

f (MHz)

Fig.21 Input impedance as a function of frequency(series components); typical values.

Class-B operation; V DS = 5 0 V; I DQ = 0.1 A;P L = 150 W; R GS = 15 Ω .

handbook, halfpage

0 200

10

0

2

MGP108

4

6

8

100

XL

ZL(Ω)

f (MHz)

RL

Fig.22 Load impedance as a function of frequency(series components); typical values.

Class-B operation; V DS = 50 V; I DQ = 0.1 A;P L = 150 W; R GS = 15 Ω .

handbook, halfpage

MBA379 Zi ZL

Fig.23 Definition of transistor impedance.

handbook, halfpage

0 200

30

10

0

20

100

MGP109

Gp(dB)

f (MHz)

Fig.24 Power gain as a function of frequency;

typical values.

Class-B operation; V DS = 50 V; I DQ = 0.1 A;P L = 150 W; R GS = 15 Ω .

Rev. 06 - 24 January 2007 15 of 19

8/10/2019 BLF177_N




BLF177 scattering parametersVDS = 50 V; I D = 100 mA; note 1.

Note1. For more extensive s-parameters see internet website:

http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast

f (MHz)s 11 s 21 s 12 s 22

|s 11 | Φ |s 21 | Φ |s 12 | Φ |s 22 | Φ

5 0.86 −110.20 36.90 114.20 0.02 25.20 0.64 −84.90

10 0.83 −139.40 20.39 93.30 0.02 5.10 0.55 −112.00

20 0.85 −155.70 9.82 72.60 0.02 −13.40 0.60 −129.30

30 0.88 −161.50 5.96 59.30 0.02 −24.70 0.69 −138.00

40 0.90 −164.90 3.98 49.30 0.02 −31.70 0.76 −144.30

50 0.92 −167.10 2.83 41.90 0.01 −35.80 0.82 −149.30

60 0.94 −169.00 2.11 36.00 0.01 −36.80 0.86 −153.5070 0.96 −170.70 1.63 31.20 0.01 −33.70 0.89 −157.00

80 0.96 −172.20 1.29 27.40 0.00 −23.00 0.91 −159.90

90 0.97 −173.40 1.04 24.20 0.00 3.30 0.92 −162.40

100 0.97 −174.30 0.86 21.70 0.00 42.50 0.94 −164.50

125 0.99 −176.50 0.57 16.40 0.01 81.60 0.95 −168.80

150 0.99 −178.10 0.40 13.40 0.01 88.70 0.97 −171.90

175 0.99 −179.80 0.30 11.60 0.02 90.70 0.98 −174.50

200 1.00 179.20 0.23 11.00 0.02 90.80 0.98 −176.70

250 1.00 177.00 0.15 11.70 0.03 90.50 0.99 179.80

300 1.00 175.10 0.11 16.70 0.03 89.60 0.99 176.90350 0.99 173.30 0.08 24.10 0.04 88.30 0.99 174.30

400 1.00 171.80 0.07 33.10 0.05 88.00 0.99 171.90

450 0.99 170.10 0.07 42.70 0.05 87.80 0.99 169.60

500 0.99 168.50 0.07 51.90 0.06 86.50 0.99 167.40

600 0.99 165.40 0.07 64.20 0.07 84.90 0.99 163.10

700 0.99 162.30 0.09 70.60 0.09 83.10 0.98 158.90

800 0.99 158.90 0.10 73.80 0.10 82.20 0.98 154.80

900 0.99 155.30 0.12 74.90 0.12 80.70 0.97 150.60

1000 0.98 151.80 0.14 76.40 0.14 79.80 0.97 146.20

Rev. 06 - 24 January 2007 16 of 19

8/10/2019 BLF177_N




PACKAGE OUTLINE

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT121B 99-03-29

0 5 10 mm

scale

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

1 2

4 3

U3

D1

U2

H

H

b

Q

D

U1

q

A

F

c

p

w1 M M M

M Mw2

B

C

C

A

A B

α

0.25

UNIT A

mm

Db

5.825.56

0.160.10

12.8612.59

12.8312.57

28.4525.52

3.303.05

6.486.22

7.276.17

c D1 U3U2

12.3212.06

0.51

w1 w2

45 °

αU1

24.9024.63

Q

4.453.91

q

18.42

F

2.672.41

0.01inches 0.229

0.2190.0060.004

0.5060.496

0.5050.495

1.1201.005

0.1300.120

0.2550.245

0.2860.243

0.4850.475

0.020.980.97

0.1750.154

0.7250.1050.095

pH

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Rev. 06 - 24 January 2007 17 of 19

8/10/2019 BLF177_N


NXP Semiconductors BLF177HF/VHF power MOS transistor

Legal information

Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Denitions”.

[3] The productstatus of device(s) described in thisdocument may havechanged since this document was published andmaydiffer in case ofmultiple devices.The latestproduct statusinformation is available on the Internet at URL http://www.nxp.com .

DenitionsDraft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein andshall have no liabilityfor the consequencesofuse of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith thesame product type number(s) andtitle. A short data sheet is intendedfor quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors salesofce. In case of any inconsistency or conict with the short data sheet, thefull data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations orwarranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.

Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including withoutlimitation specications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a NXP Semiconductors product can reasonably be expected toresult in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXPSemiconductors products in such equipment or applications and thereforesuch inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecied use without further testing or modication.

Limiting values — Stress above one or more limiting values (as dened inthe Absolute Maximum Ratings System of IEC 60134) may cause permanentdamage to the device. Limiting values are stress ratings only andoperation ofthe device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limitingvalues for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nxp.com/prole/terms , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case ofany inconsistency or conict between information in this document and suchterms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

TrademarksNotice: All referenced brands, product names, service names and trademarksare the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com

For sales ofce addresses, send an email to: [email protected]

Document status [1][2] Product status [3] Denition

Objective [short] data sheet Development This document contains data from the objective specication for product development.

Preliminary [short] data sheet Qualication This document contains data from the preliminary specication.

Product [short] data sheet Production This document contains the product specication.

Rev. 06 - 24 January 2007 18 of 19

8/10/2019 BLF177_N


NXP Semiconductors BLF177HF/VHF power MOS transistor

© NXP B.V. 2007. All rights reserved.For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]

Date of release: 24 January 2007Document identifier: BLF177_N_6

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF177_N_6 20070124 Product data sheet - BLF177_5

Modications: • correction made to gure title of Fig.13

• correction made to note 2 on page 9

• correction made to note 2 on page 13

• correction made to gure note of Fig.20

BLF177_5(9397 750 14416)

20041217 Product specication - BLF177_4

BLF177_4

(9397 750 11579)

20030721 Product specication - BLF177_3

BLF177_3(9397 750 04059)

19980702 Product specication - BLF177_CNV_2

BLF177_CNV_2(9397 750 xxxxx)

19971216 Product specication - -

BLF177_N

Documents

Transcript of BLF177_N