BioMEMSLecture 7 and 8
Transcript of BioMEMSLecture 7 and 8
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Biomicroelectromechanical systems
Lecture 7 and 8
Shantanu Bhattacharya
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Review of previous lecture
•Photolithography
•Plasma definitions.•Types of plasma
systems.
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Magnetically enhanced plasma
Ref :Boumans, P.W.J.M., Inductively coupled plasmaemission spectroscopy, Interscience publication, New York
Another type of
plasma is enhanced
magnetically. Theplasma used in our
case the ICP or
inductively coupled
plasma is also
enhanced
magnetically. A streamof gas in led into the
plasma chamber.
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Magnetically enhanced plasma
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Inlet
gas
Outletgas
Ref :Boumans, P.W.J.M., Inductively coupled plasmaemission spectroscopy, Interscience publication, New York
A Tesla coil placed on
the top of the chamber is
activated to cause anelectrical discharge. This
discharge causes some
gas atoms to dissociate
and come to excited
states and also generate
ions and electrons.
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Magnetically enhanced plasma
e-
+
Inlet
gas
Outletgas
B
R= m v
q B
m= Particle mass
v= Particle velocity
q= particle charge
B= magnetic field
Ref :Boumans, P.W.J.M., Inductively coupled plasmaemission spectroscopy, Interscience publication, New York
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Magnetically enhanced plasma
e-
+
Inlet
gas
Outletgas
B
R= m v
q B
m= Particle mass
v= Particle velocity
q= particle charge
B= magnetic field
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Outer Gas
Inner Gas
ICP Matching
Network ICP Coil
View PortWindow
ChamberBlock
Helium Coolant Inlet
Vacuum Port
Chuck
ProcessGas Inlet
RIE Matching
Network
Trion Inductively coupled plasma systemThe inner and outer gas
streams mix inside the
chamber
1. Ref: Service and warranty manual ,TrionTechnologies
The figure on the left shows a schematic of the gas piping that leads the process gasesinto the chamber. Two streams of gases are injected. One is the inner stream that is the
main process gas. The secondary stream shot at an angle is mainly used to produce
turbulence in the plasma chamber as the molecules in the secondary stream have
higher velocities and are directed an an angle.The plasma is produced in the same way
as mentioned in the previous slides. The addition in this case is the application of an RF
Bias which drives the plasma to the substrate.
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MEMS materials
• Silicon and microelectronic materials• Glass, Quartz
• Polymers
– Poly (dimethylsiloxane) (PDMS)
– Poly (methyl methacrylate) (PMMA)
– Teflon, etc.
• Biological Entities
– Cells, Proteins, DNA – Frontier of BioMEMS !
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Some Fabrication Methods for soft materials
• Soft Lithography – Replication and molding
– Micro-contact printing
– Micro-molding in capillaries
– Micro-transfer molding
– Solvent assisted micro-molding
– Dip Pen Lithography
• Compression Molding
– Hot Embossing
– Injection Molding
• Inkjet Printing
Evan et. al., 2007, NC
state at Chapel Hill
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Replication and Molding
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Micro contact printing
Ink the PDMS structure with
molecules (alkylthiols,
proteins, DNA, etc.)
• Transfer the layer throughphysical contact in a gold
layer (optimize time)
• Inking is performed via
covalent binding onsubstrate
• Can be performed on flat
surface or curved surface
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Capillary moulding (Used for micropatterning)
SU8- Thick –ve
resist
UV exposure
SU8- Thick –ve
resist
Master Mold
SU8- Thick –ve
resist
PDMS soft mold
release
Thermosetting resin
paste
Coating the paste
Capillary infiltration
Ribs for PDP (release the mold)
•Create a master and replicate a polymer layer to
create capillaries.
•Spin coat the resin to be patterned
•Contact the polymer replica for the resin to go in the
capillary.
•Usually have a thermosetting component and so the
replica can be released to obtain the ribs.
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Dip Pen Lithography
AFM Tip used to ‘write’ molecules
• Being commercialized by Nanoink,
Inc.
• SAMs, DNA, Proteins, etc.
• Serial (need array of cantilevers for
parallel writing)
• Continuous source of molecules –microfluidics .
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Compression Molding
•Take a patterned hard substrate that can
withstand heat and pressure without much
deformation.
•Press this over a spun on thermoplastic
polymer layer, heat the ensemble and
release it.
Cavity
Barrel
Hopper Hydraulic
screw drive
and gearing
Clamping
unit
Heater bands Screw
Features down to 0.1um
deep and 0.6um wide (for
CD-R)
l h h
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Nano imprint lithographyImprint mold with
10nm diameter
pillars
10nm diameter hole
imprinted in PMMA
10nm diameter metal
dots
• Nano-scale extension of hotembossing
• Need a nano-scale master mold
• Added to ITRS Roadmap
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Plasma assisted etching
•Etching is an act of engraving by means of which, an agent eats away lines or
surfaces left unprotected in different substrate.
•The extent of undercut is given as etch anisotropy (A).
Rv
Rl A 1
Where, Rl= Lateral etch, Rv= Vertical etch
If A=1, lateral etch iszero, Etch is perfectly
anisotropic
Photoresist
If A<1, lateral etchexists
103 101 10-1 10-3 10-5
High-pressure
plasma etching
Reactive ion
etchingIon Milling
Pressure (torr)
Different plasma etching regimes
1. Ref: Morgan, R.A., Plasma Etching in semiconductor
fabrication Elsevier Amsterdam 1985.
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Steps for Plasma etching
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Cation
Electron
High energy
species
1. Ref: Boley Forrest I., Plasmas –
laboratory and cosmic,D. Van Nostrand Company, Inc., Priceton, New Jersey.
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Steps for Plasma etching
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1. Ref: Boley Forrest I., Plasmas – laboratory and cosmic,
D. Van Nostrand Company, Inc., Priceton, New Jersey.
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Steps for Plasma etching
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1. Ref: Boley Forrest I., Plasmas – laboratory and cosmic,
D. Van Nostrand Company, Inc., Priceton, New Jersey.
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Steps for Plasma etching
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Chemical
reaction
1. Ref: Campbell, Stephen A., Science of microelectronic
fabrication, Oxford University Press, New York, 1996
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Steps for Plasma etching
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Reaction
products
Outlet
1. Ref: Campbell, Stephen A., Science of microelectronic
fabrication, Oxford University Press, New York, 1996
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Results: Fabrication Methodology Develo ped
Si
CH3
CH3
O
UV
Si
CH2OOH
CH3
OO2
-CH2O
Si
.
CH3
O OH+
.
Si
OH
CH3
O
Si
CH3
CH3
OSi
CH3
CH3
O
UV
Si
CH2OOH
CH3
OO2
-CH2O
Si
.
CH3
OSi
.
CH3
O OH+
.
Si
OH
CH3
O
Change of
PDMS
surface on
exposureto Oxygen
Plasma
Hydrophilic
groups
109o
Untreated PDMS
20o
Treated PDMS
Ref:Surface wettability studies in PDMS and glass and its correlation with bond strength, S.Bhattacharya, A. Datta, J.Berg and S. Gangopadhyay, JMEMS, Vol. 14, No.3, pp.590-597
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Bond Strength Measurement
Blister Size 3mm
PEEK1 tubing
Steel tube
(23 gauge)
Epoxy
Schematic of blister
Plan view
Elevation
1 Poly Eukaryotic
Ether Ketone
Testing of bond
strength using
compressed air
PDMS-PDMSblister after
testing
Glass-PDMSblister after
testing
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Effect on PDMS surface of Plasma exposure
Surface transformations on exposure to Oxygen plasma
Si
CH3
CH3
O
UV
Si
CH2OOH
CH3
OO2
-CH2O
Si
.
CH3
O OH+
.
Si
OH
CH3
O
Si
CH3
CH3
OSi
CH3
CH3
O
UV
Si
CH2OOH
CH3
OO2
-CH2O
Si
.
CH3
OSi
.
CH3
O OH+
.
Si
OH
CH3
O
Si
CH3
CH3
O
UV
O2
Si
.
CH3
O
+
.
Si
OOH
CH3
O
CH3
O2 -OH
.
Si
.
CH3
O
Si
.
CH3
O
+
O
Si
CH3
O Si
CH3
O
O O
Si
CH3
CH3
OSi
CH3
CH3
O
UV
O2
Si
.
CH3
OSi
.
CH3
O
+
.
Si
OOH
CH3
O
CH3
O2 -OH
.
Si
.
CH3
O
Si
.
CH3
OSi
.
CH3
O
+
O
Si
CH3
O Si
CH3
O
O O
Scheme1
Scheme2
1. Ref: Hillborg H., Gedde U.W., IEEE transactions ondielectrics and electrical insulation, Vol. 6 No. 5,
October 1999.
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Surface cracking and oozing out of Oligomeric chains
Thin Silica
Layer
PDMS
Bulk
Cracks on the
Silica Layer
Short chain oligomers
coming up from the bulk
PDMS
Uncracked protective silica
layer
Cracked due to
harsher
treatments
1. Ref: Plasma treatment of Poly (dimethyl) silaxane, Owen M.J., Smith P.J.,
Journal of adhesion science and technology, Vol.8, No. 10, pp. 1063-1075, 1994
ff b h
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Differences between various etch regimes
S.N. High PressureEtching Ion Milling Reactive Ion Etching
1 Mean free path of
the species is much
less than chamber
size
Mean free path is
comparable to
chamber size because
of low pressures
Moderate mean free
path of the species.
2 The plasma is used to
start and stop
chemical reactions
The plasma is used to
abrade the substrate
by sputtering out
material
Processing is
primarily chemical
transformation of the
surface
3 Ion impact energy is
low .
Ion impact energy is
high
Moderate impact
energy
4 The plasma is
homogeneous and
isotropic
It has a high
directionality.
The degree of
anisotropy is higher
1. Ref: Spitzer Lyman, Jr., Physics of fully ionized gases,