BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz ...
Transcript of BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz ...
RF and Protect ion Devices
BGA925L6
Appl icat ion Note AN266 Revision: Rev. 1.1
2012-03-21
Optimizing Reject ion of LTE Band -13 (777-787 MHz) Jammers Using 0201 Components
Edition 2012-04-24
Published by Infineon Technologies AG 81726 Munich, Germany
© 2012 Infineon Technologies AG All Rights Reserved.
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BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Application Note AN266, Rev. 1.1 2012-03-21 3 / 24
Application Note AN266
Revision History: 2012-03-21
Previous Revision: Rev. 1.0, 2011-07-25
Page Subjects (major changes since last revision)
8 Values in Table-2 updated
11 Value of L3 changed from 6.2 nH to 5.6 nH
12-21 Marker position changed and corresponding values updated, S-parameter graphs updated
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Last Trademarks Update 2011-11-11
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Table of Content, List of Figures and Tables
Application Note AN266, Rev. 1.1 2012-03-21 4 / 24
Table of Content
1 BGA925L6 GPS Front-End LNA for High Performance Integrated Solution ................................ 6
2 Introduction ........................................................................................................................................ 7
3 Application Circuit ........................................................................................................................... 11
4 Typical Measurement Results ......................................................................................................... 12
5 Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands ...................................... 14
6 Miscellaneous Measured Graphs ................................................................................................... 19
7 Evaluation Board .............................................................................................................................. 22
8 Authors .............................................................................................................................................. 23
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Table of Content, List of Figures and Tables
Application Note AN266, Rev. 1.1 2012-03-21 5 / 24
List of Figures
Figure 1 BGA925L6 in TSLP-6-2 Package (0.70mm x 1.1mm x 0.40mm) ........................................................ 6 Figure 2 BGA925L6 package size in comparison with 0402 and 0201 components ......................................... 9 Figure 3 Block diagram of the BGA925L6 for GNSS band 1559-1615MHz applications ................................ 10 Figure 4 BGA925L6 application circuit ............................................................................................................. 11 Figure 5 Power gain of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands ............................... 14 Figure 6 Narrowband power gain of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands........... 14 Figure 7 Input matching of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands ......................... 15 Figure 8 Output matching of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands ...................... 15 Figure 9 Reverse isolation of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands ..................... 16 Figure 10 Noise figure of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands .............................. 16 Figure 11 Input 1 dB compression point of BGA925L6 at supply voltage of 1.8V for COMPASS, Galileo, GPS
and GLONASS bands ........................................................................................................................ 17 Figure 12 Input 1 dB compression point of BGA925L6 at supply voltage of 2.8V for COMPASS, Galileo, GPS
and GLONASS bands ........................................................................................................................ 17 Figure 13 Carrier and intermodulation products of BGA925L6 for GPS band at Vcc=1.8V .............................. 18 Figure 14 Carrier and intermodulation products of BGA925L6 for GPS band at Vcc=2.8V .............................. 18 Figure 15 Stability factor k of BGA925L6 upto 10GHz ....................................................................................... 19 Figure 16 Stability factor µ1 of BGA925L6 upto 10GHz ..................................................................................... 19 Figure 17 Stability factor µ2 of BGA925L6 upto 10GHz ..................................................................................... 20 Figure 18 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=1.8V ...... 20 Figure 19 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=2.8V ...... 21 Figure 20 Populated PCB picture of BGA925L6 ................................................................................................ 22 Figure 21 PCB layer stack .................................................................................................................................. 22
List of Tables
Table 1 BGA925L6 with different circuit topologies .......................................................................................... 8 Table 2 Comparison of different application circuits at supply voltage of 2.8V ................................................. 8 Table 3 Pin Definition ...................................................................................................................................... 10 Table 4 Switching Mode .................................................................................................................................. 10 Table 5 Bill-of-Materials ................................................................................................................................... 11 Table 6 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V .............................................. 12 Table 7 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V .............................................. 13
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
BGA925L6 GPS Front-End LNA for High Performance Integrated Solution
Application Note AN266, Rev. 1.1 2012-03-21 6 / 24
1 BGA925L6 GPS Front-End LNA for High Performance Integrated Solution
1.1 Features
• High gain: 15.8 dB
• High out-of-band input 3rd-order intercept point: +7 dBm
• High input 1dB compression point: -5 dBm
• Low noise figure: 0.65 dB
• Low current consumption: 4.8 mA
• Operating frequency: 1550-1615 MHz
• Supply voltage: 1.5 V to 3.6 V
• Digital on/off switch (1V logic high level)
• Ultra small TSLP-6-2 leadless package
• Package dimensions: 0.70mm x 1.1mm x 0.40mm
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Only two external SMD components necessary
• 2 kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package
Figure 1 BGA925L6 in TSLP-6-2 Package (0.70mm x 1.1mm x 0.40mm)
1.2 Applications
- GPS (Global Positioning System) working in the L1 band at 1575.42 MHz
- GLONASS (Russian GNSS) working in the L1 band from 1598.06 MHz to 1605.38 MHz
- Galileo (European GNSS) working in the E2-L1-E1 band from 1559 MHz to 1592 MHz
- COMPASS (Chinese Beidou Navigation System) working in E2 band at 1561.10 MHz and E1 band at 1589.74 MHz
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Introduction
Application Note AN266, Rev. 1.1 2012-03-21 7 / 24
2 Introduction
The BGA925L6 is a front-end Low Noise Amplifier (LNA) for Global Navigation Satellite
Systems (GNSS) application. It is based on Infineon Technologies’ B7HF Silicon-Germanium
(SiGe:C) technology, enabling a cost-effective solution in a ultra small TSLP-6-2 package
with ultra low noise figure, high gain, high linearity and low current consumption over a wide
range of supply voltages from 3.6 V down to 1.5 V. All these features make BGA925L6 an
excellent choice for GNSS LNA as it improves sensitivity, provide greater immunity against
out-of-band jammer signals, reduces filtering requirement and hence the overall cost of the
GNSS receiver.
The GNSS satellites are at an orbit altitude of more than 20,000 km away from earth’s
surface and transmit power in the range of +47 dBm. After taking losses (atmospheric,
antenna etc.) into account, the received signal strength at the GNSS device input is very low
in the range of -130 dBm. The ability of the GNSS device to receive such a low signal
strength and provide meaningful information to the end-user depends strongly on the noise
figure of the GNSS receive chain. This ability which is called receiver sensitivity can be
improved by using a low-noise amplifier with low noise figure and high gain at the input of the
receiver chain. The improved sensitivity results in a shorter Time-To-First-Fix (TTFF), which
is the time required for a GNSS receiver to acquire satellite signals and navigation data, and
calculate a position. Noise figure of the LNA defines the overall noise figure of the GNSS
receiver system. This is where BGA925L6 excels by providing noise figure as low as 0.65 dB
and high gain of 15.8 dB, thereby improving the receiver sensitivity significantly.
The ever growing demand to integrate more and more functionality into one device leads to
many challenges when transmitter/receiver has to work simultaneously without degrading the
performance of each other. In today’s smart-phones a GNSS receiver simultaneously co-
exists with transceivers in the GSM/EDGE/UMTS/LTE bands. These 3G/4G transceivers
transmit high power in the range of +24 dBm which due to insufficient isolation couple to the
GNSS receiver. The cellular signals can mix to produce Intermodulation products exactly in
the GNSS receiver frequency band. For example, GSM 1712.7 MHz mixes with UMTS 1850
MHz to produce third-order-product exactly at GPS. To quantify the effect, BGA925L6 shows
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Introduction
Application Note AN266, Rev. 1.1 2012-03-21 8 / 24
out-of-band input IP3 at GPS of +8.1 dBm as a result of frequency mixing between GSM
1712.7 MHz and UMTS 1850 MHz with power levels of -20 dBm and -65 dBm. BGA925L6
has a high out-of-band input 3rd order intercept point (IIP3) of +8.1 dBm, so that it is
especially suitable for the GPS function in mobile phones.
Another issue which is frequently encountered in Smartphones nowdays, is the 2nd harmonic
of LTE Band-13 operating at 787.76 MHz. The 2nd harmonic of LTE Band-13 falls exactly into
the GPS band. In this application note BGA925L6 has been optimized to keep noise
figure below 1.0 dB and also input referred band-13 2nd harmonic level of below -120
dBm.
Table 1 BGA925L6 with different circuit topologies
Application Circuit 1 Application Circuit 2
GNDRF, 4
AI, 5
PON, 6
AO, 3
VCC, 2
GND, 1
RFin L1C1
Pon
BGA925L6N1
GNDRF, 4
AI, 5
PON, 6
AO, 3
VCC, 2
GND, 1
RFin
L3
C3
C1
Pon
BGA925L6N1
Table 2 Comparison of different application circuits at supply voltage of 2.8V
Application circuit
Component values Noise Figure [dB]
Band-13 2nd
harmonic*
[dBm]
Out-of-band Input IP3**
[dBm]
S21 @ 1575.42 MHz
[dB]
S21 @ 787.76 MHz
[dB]
Circuit 1 C1=2pF, L1=10nH 1.0 -56.1 6.7 15.80 2.53
Circuit 2 C1=2pF,
L3=5.6nH, C3=6.8pF
0.96 -124.3 8.1 15.50 -32.4
AN265 C1=1nF, L1=6.2nH 0.74 -47.5 9.5 15.76 6.87
AN267 C1=2.7pF,
L3***=6.2nH, C3=6.8pF 0.83 -119.7 7.5 15.60 -30.8
*This level is input-referred.
**Test conditions: f1IN = 1712.7 MHz, P1IN = -20 dBm, f2IN = 1850 MHz, P2IN = -65 dBm
***Only this inductor in above application circuits is 0402 size and rest are of 0201 size.
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Introduction
Application Note AN266, Rev. 1.1 2012-03-21 9 / 24
Depending upon requirement, BGA925L6 performance can be optimized using various
component values or circuit topologies. As can be seen from Table 2, different application
circuits are designed to optimize noise figure and band-13 2nd harmonic. This is achieved by
using three 0201 size external SMDs; two capacitors and one inductor1. The L3-C3 series
combination is used to create a notch at 787.76 MHz and thus improve the rejection of
incoming signal at 787.76 MHz. The component values C1-L3-C3 are tuned so as to get
optimal noise figure, input matching and band-13 2nd harmonic rejection.
As the industry inclines toward assembly miniaturization and also surface mount technology
matures, there is a desire to have smaller and thinner components. This is especially the
case with portable electronics where higher circuit density is desired. BGA925L6 has ultra
small package with dimensions of 0.70mm x 1.1mm x 0.40mm and it requires only two
components at its input, the capacitor at the input has to be used if a DC block is required
and the inductor provides input matching.This reduces the application bill of materials and the
PCB area thus making it an ideal solution for compact and cost-effective GNSS LNA. The
output of the BGA925L6 is internally matched to 50 Ω, and a DC blocking capacitor is
integrated on-chip, thus no external component is required at the output.
Figure 2 BGA925L6 package size in comparison with 0402 and 0201 components
1 In this application note 0201 size SMDs are used. The noise figure of this application circuit can be further improved by
using 0402 size inductor. For complete evaluation of this circuit please refer to AN267.
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Introduction
Application Note AN266, Rev. 1.1 2012-03-21 10 / 24
The device also integrates an on-chip ESD protection which can resist until 2 kV (referenced
to Human Body Model). The integrated power on/off feature provides for low power
consumption and increased stand-by time for GNSS handsets. Moreover, the low current
consumption (4.8 mA) makes the device suitable for portable technology like GNSS receivers
and mobiles phones.
The internal circuit diagram of the BGA925L6 is presented in Figure 3. Table 3 shows the pin
assignment of BGA925L6. Table 4 shows the truth table to turn on/off BGA925L6 by applying
different voltage to the PON pin.
Figure 3 Block diagram of the BGA925L6 for GNSS band 1559-1615MHz applications
Table 3 Pin Definition
Pin Symbol Comment
1 GND General ground
2 VCC DC supply
3 AO LNA output
4 GNDRF LNA RF ground
5 AI LNA input
6 PON Power on control
Table 4 Switching Mode
Mode Symbol ON/OFF Control Voltage
Min Max
On PON, on 1.0V VCC
Off PON, off 0 V 0.4 V
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Application Circuit
Application Note AN266, Rev. 1.1 2012-03-21 11 / 24
3 Application Circuit
3.1 Schematic Diagram
GNDRF, 4
AI, 5
PON, 6
AO, 3
VCC, 2
GND, 1
RFin
RFout
L3
C3
C1
C2(optional)
Pon
Vcc
BGA925L6N1
Figure 4 BGA925L6 application circuit
Table 5 Bill-of-Materials
Symbol Value Unit Package Manufacturer Comment
C1 2 pF 0201 Various DC block/Input matching
C2 (optional) 10 nF 0201 Various RF bypass
L3 5.6 nH 0201 Murata LQP series Input matching
C3 6.8 pF 0201 Various Input matching
N1 BGA925L6 TSLP-6-2 Infineon SiGe:C LNA
PCB substrate
FR4
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Typical Measurement Results
Application Note AN266, Rev. 1.1 2012-03-21 12 / 24
4 Typical Measurement Results
Table 6 and Table 7 show typical measurement results of the application circuit shown in Figure 4. The values given in this table include losses of the board and the SMA connectors if not otherwise stated.
Table 6 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V
Parameter Symbol Value Unit Comment/Test Condition
DC Voltage Vcc 1.8 V
DC Current Icc 4.8 mA
Navigation System
Sys COMPASS/
Galileo GPS GLONASS
Frequency Range
Freq 1559-1593 1575.42 1598-1606 MHz
Gain G 15.4 15.4 15.3 dB
Noise Figure NF 0.97 0.97 0.96 dB PCB and SMA connectors of 0.1 dB losses substracted
Input Return Loss
RLin 13.3 12.9 12.2 dB
Output Return Loss
RLout 20.2 22.1 26.7 dB
Reverse Isolation
IRev 22.5 22.4 22.3 dB
Input P1dB IP1dB -9.9 -9.3 -9.3 dBm
fgalileo = 1559 MHz
fgps = 1575 MHz
f GLONASS = 1605 MHz
Output P1dB OP1dB 4.5 5.1 5.0 dBm
LTE band-13 2
nd Harmonic
H2 – input referred
-124.1 dBm fIN = 787.76 MHz, PIN = -25 dBm
fH2 = 1575.52 MHz
Input IP3
In-band IIP3 -4.9 -4.9 -3.5 dBm
Output IP3
In-band OIP3 10.5 10.5 11.8 dBm
f1gal/gps = 1575 MHz
f2gal/gps = 1576MHz
f1GLONASS =1602 MHz
f2GLONASS =1603 MHz
Input power= -30dBm
Input IP3
out-of-band IIP3OOB 8.0 dBm
f1 = 1712.7 MHz, P1IN = -20 dBm
f2 = 1850 MHz, P2IN = -65 dBm
fIIP3 = 1575.4 MHz
Stability k >1 -- Unconditionnally Stable from 0 to 10GHz
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Application Note AN266, Rev. 1.1 2012-03-21 13 / 24
Table 7 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V
Parameter Symbol Value Unit Comment/Test Condition
DC Voltage Vcc 2.8 V
DC Current Icc 5.0 mA
Navigation System
Sys COMPASS/
Galileo GPS GLONASS
Frequency Range
Freq 1559-1593 1575.42 1598-1606 MHz
Gain G 15.5 15.5 15.4 dB
Noise Figure NF 0.97 0.96 0.95 dB PCB and SMA connectors of 0.1 dB losses substracted
Input Return Loss
RLin 13.7 13.3 12.6 dB
Output Return Loss
RLout 18.0 19.5 22.7 dB
Reverse Isolation
IRev 22.9 22.9 22.7 dB
Input P1dB IP1dB -9.6 -9.0 -8.9 dBm
fgalileo = 1559 MHz
fgps = 1575 MHz
f GLONASS = 1605 MHz
Output P1dB OP1dB 4.9 5.5 5.5 dBm
LTE band-13 2
nd Harmonic
H2 – input referred
-124.3 dBm fIN = 787.76 MHz, PIN = -25 dBm
fH2 = 1575.52 MHz
Input IP3
In-band IIP3 -4.8 -4.8 -3.5 dBm
Output IP3
In-band OIP3 10.7 10.7 11.9 dBm
f1gal/gps = 1575 MHz
f2gal/gps = 1576MHz
f1GLONASS =1602 MHz
f2GLONASS =1603 MHz
Input power= -30dBm
Input IP3
out-of-band IIP3OOB 8.1 dBm
f1 = 1712.7 MHz, P1IN = -20 dBm
f2 = 1850 MHz, P2IN = -65 dBm
fIIP3 = 1575.4 MHz
Stability k >1 -- Unconditionnally Stable from 0 to 10GHz
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands
Application Note AN266, Rev. 1.1 2012-03-21 14 / 24
5 Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands
0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000
Frequency (MHz)
Gain
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
S2
1 (
dB
)
787.76 MHz-32.4 dB
1575.4 MHz15.4 dB
Gain at Vcc=1.8V
Gain at Vcc=2.8V
Figure 5 Power gain of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands
1500 1525 1550 1575 1600 1625 1650
Frequency (MHz)
Narrowband gain
14.6
14.8
15
15.2
15.4
15.6
15.8
16
16.2
16.4
16.6
S2
1 (
dB
) 1605.4 MHz15.4 dB
1575.4 MHz15.5 dB
1559 MHz15.5 dB
1605.4 MHz15.3 dB
1559 MHz15.4 dB
1575.4 MHz15.4 dB
Gain at Vcc=1.8V
Gain at Vcc=2.8V
Figure 6 Narrowband power gain of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands
Application Note AN266, Rev. 1.1 2012-03-21 15 / 24
1500 1525 1550 1575 1600 1625 1650
Frequency (MHz)
Input matching
-20
-15
-10
-5
0
S11 (
dB
)
1559 MHz-13.7 dB
1575.4 MHz-13.3 dB
1605.4 MHz-12.6 dB
1575.4 MHz-12.9 dB
1559 MHz-13.3 dB
1605.4 MHz-12.2 dB
S11 at Vcc=1.8V
S11 at Vcc=2.8V
Figure 7 Input matching of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands
1500 1525 1550 1575 1600 1625 1650
Frequency (MHz)
Output matching
-35
-30
-25
-20
-15
-10
-5
0
S22 (
dB
) 1575.4 MHz-19.5 dB
1559 MHz-18 dB
1605.4 MHz-22.7 dB
1605.4 MHz-26.7 dB
1559 MHz-20.2 dB
1575.4 MHz-22.1 dB
S22 at Vcc=1.8V
S22 at Vcc=2.8V
Figure 8 Output matching of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands
Application Note AN266, Rev. 1.1 2012-03-21 16 / 24
1500 1525 1550 1575 1600 1625 1650
Frequency (MHz)
Isolation
-30
-25
-20
-15
-10
S12 (
dB
)
1605.4 MHz-22.7 dB
1575.4 MHz-22.9 dB
1559 MHz-22.9 dB
1605.4 MHz-22.3 dB
1575.4 MHz-22.4 dB
1559 MHz-22.5 dB
S12 at Vcc=1.8V
S12 at Vcc=2.8V
Figure 9 Reverse isolation of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands
1559 1567 1575 1583 1591 1599 1607 1615
Frequency (MHz)
Noise figure
0.8
0.9
1
1.1
NF
(dB
)
1605.4 MHz0.95
1575.4 MHz0.96
1559 MHz0.97
1605.4 MHz0.96
1575.4 MHz0.97
1559 MHz0.97
NF at Vcc=1.8V
NF at Vcc=2.8V
Figure 10 Noise figure of BGA925L6 for COMPASS, Galileo, GPS and GLONASS bands
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands
Application Note AN266, Rev. 1.1 2012-03-21 17 / 24
-25 -20 -15 -10 -5 0
Power (dBm)
Compression point at 1dB with Vcc=1.8V
10
12
14
16
18
20
Gain
(dB
)
-9.3 dBm14.1 dB -9.3 dBm
14.1 dB
-25 dBm15.1 dB
-25 dBm15.1 dB
-9.9 dBm14.1 dB
-25 dBm15.1 dB
P1dB at Vcc=1.8V Galileo (1559MHz)
P1dB at Vcc=1.8V GPS (1575MHz)
P1dB at Vcc=1.8V GLONASS (1605MHz)
Figure 11 Input 1 dB compression point of BGA925L6 at supply voltage of 1.8V for COMPASS, Galileo, GPS and GLONASS bands
-25 -20 -15 -10 -5 0
Power (dBm)
Compression point at 1dB with Vcc=2.8V
10
12
14
16
18
20
Gain
(dB
)
-8.9 dBm14.3 dB
-9 dBm14.2 dB
-9.6 dBm14.2 dB
-25 dBm15.3 dB
-25 dBm15.2 dB
-25 dBm15.2 dB
P1dB at Vcc=2.8V Galileo (1559MHz)
P1dB at Vcc=2.8V GPS (1575MHz)
P1dB at Vcc=2.8V GLONASS (1605MHz)
Figure 12 Input 1 dB compression point of BGA925L6 at supply voltage of 2.8V for COMPASS, Galileo, GPS and GLONASS bands
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Measured Graphs for COMPASS, Galileo, GPS and GLONASS bands
Application Note AN266, Rev. 1.1 2012-03-21 18 / 24
1573 1574 1575 1576 1577 1578
Frequency (MHz)
Intermodulation for GPS band
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
Pow
er
(dB
m)
1574 MHz-66.05
1576 MHz-15.01
1575 MHz-14.98
Figure 13 Carrier and intermodulation products of BGA925L6 for GPS band at Vcc=1.8V
1573 1574 1575 1576 1577 1578
Frequency (MHz)
Intermodulation for GPS band
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
Pow
er
(dB
m)
1574 MHz-66.06
1576 MHz-14.92
1575 MHz-14.89
Figure 14 Carrier and intermodulation products of BGA925L6 for GPS band at Vcc=2.8V
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Miscellaneous Measured Graphs
Application Note AN266, Rev. 1.1 2012-03-21 19 / 24
6 Miscellaneous Measured Graphs
0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000
Frequency (MHz)
Stability K factor
0
1
2
3
1575.4 MHz1.25
1575.4 MHz1.28
Stability K factor at Vcc=1.8V
Stability K factor at Vcc=2.8V
Figure 15 Stability factor k of BGA925L6 upto 10GHz
0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000
Frequency (MHz)
Stability Mu1 factor
0
1
2
3
1575.4 MHz1.74
1575.4 MHz1.77
Stability Mu1 factor at Vcc=1.8V
Stability Mu1 factor at Vcc=2.8V
Figure 16 Stability factor µ1 of BGA925L6 upto 10GHz
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Miscellaneous Measured Graphs
Application Note AN266, Rev. 1.1 2012-03-21 20 / 24
0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000
Frequency (MHz)
Stability Mu2 factor
0
1
2
3
1575.4 MHz1.47
1575.4 MHz1.41
Stability Mu2 factor at Vcc=1.8V
Stability Mu2 factor at Vcc=2.8V
Figure 17 Stability factor µ2 of BGA925L6 upto 10GHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
Input and Output matching with Vcc=1.8VSwp Max
1615MHz
Swp Min
1559MHz
1605.4 MHzr 1.05x 0.0785
1559 MHzr 1.07x 0.192
1605.4 MHzr 0.903x -0.47
1559 MHzr 1.08x -0.452
Input
Output
Figure 18 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=1.8V
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Miscellaneous Measured Graphs
Application Note AN266, Rev. 1.1 2012-03-21 21 / 24
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
Input and Output matching with Vcc=2.8VSwp Max
1615MHz
Swp Min
1559MHz
1605.4 MHzr 1.1x 0.115
1559 MHzr 1.1x 0.245
1605.4 MHzr 0.952x -0.47
1559 MHzr 1.14x -0.428
Input
Output
Figure 19 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=2.8V
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Evaluation Board
Application Note AN266, Rev. 1.1 2012-03-21 22 / 24
7 Evaluation Board
Figure 20 Populated PCB picture of BGA925L6
Figure 21 PCB layer stack
Copper
35µm
FR4, 0.2mm
FR4, 0.8mm
Vias
BGA925L6 Optimizing Rejection of LTE Band-13 (777-787 MHz) Jammers
Authors
Application Note AN266, Rev. 1.1 2012-03-21 23 / 24
8 Authors
Jagjit Singh Bal, Senior Application Engineer of Business Unit “RF and Protection Devices”.
Dr. Chih-I Lin, Senior Staff Engineer of Business Unit “RF and Protection Devices”.
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG AN266