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Transcript of Belgium / Denmark / France / Germany / Italy / …Lab Africa (Johannesburg / South Africa) 14.03. -...
B e l g i u m / D e n m a r k / F r a n c e / G e r m a n y / I t a l y / N e t h e r l a n d s / N o r t h E u r o p e & C I S /
P o l a n d / P o r t u g a l / R u s s i a / S o u t h A f r i c a / S p a i n / S w i t z e r l a n d / U n i t e d K i n g d o m
NEWS2007 Vol.1
MPPC (Multi-Pixel Photon Counter)
4
10 Gbps ROSA8
PSD Modules16
100 kV Microfocus X-Ray Source
32
Gated Image Intensifier Unit
38
THEMOS Mini41
16 models with different spectral response,
resolution, sensitivity, etc.
Select a model that fits your application
3
4
28
28
36
41
46
48
New Version of the
Photonic Multichannel
Analyzer (PMA)
Newly Developed
CW Laser Diodes
An Intelligent Hamamatsu Support Software forFailure Analysis
X-Ray Diffractometer for
Material Science and
Imaging using Hamamatsu
C4880-50-26WD CameraUltra-Compact and Low Cost Type
Mini-Spectrometer
New Position Sensitive
Photomultiplier Tubes
Si PIN Photodiode for
Optical Interconnection
Signal Processing
Units for PSD Modules
Back-Thinned TDI-CCD
Contents
Company News
Solid State Products
Laser Group
Electron Tube Products
X-Ray
Cameras
Phemos
PMA
Co
nt
en
ts
Co
mp
an
y
Ne
ws
3
Industrie Lyon (Lyon / France)06.03. - 09.03. 2007
Salon Laborama (Brussels / Belgium)13.03. - 14.03. 2007
Exhibitions
1 Company News Item
Solid State Division opens new MOEMS Product Development and Manufacturing Facilities
We are pleased to announce the opening oftwo new buildings in Solid State Division.The official opening ceremony of BuildingsNo.11 and 12, was held in September 2006and production has now started.
The buildings have around 11,000 m2 of floorspace and will provide facilities for the devel-opment, processing and assembly of MOEMS(micro-opto-electro-mechanical-systems)related technology.
Author: Jenny Brown Hamamatsu Photonics U.K.
The new facilities are part of HamamatsuPhotonics’ on-going strategy of expansion tosustain future business growth and to providethe highest level of quality and customersupport.
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Lab Africa (Johannesburg / South Africa)14.03. - 16.03. 2007
Cell Biology Meeting 2007 (DGZ) (Frankfurt / Germany)14.03. - 17.03. 2007
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2 Special Topic: Mini-Spectrometer Line-Up
16 Models with different Spectral Response, Resolution, Sensitivity, etc.Select a Model that fits your Application
Hamamatsu offers a full line of mini-spectro-meters that cover a broad spectral range fordetecting UV (from 200 nm) through nearinfrared (up to 2.2 µm) light. Our product line-up includes various mini-spectrometers withunique features. These include the newlyreleased, compact and low-cost OEM models(RC series) and high-sensitivity models (usingback-thinned CCD image sensors) which areideal for low-light-level spectrophotometry, anda cooled low-noise model. Users can choosethe optimal mini-spectrometer that best meetstheir specific application.
Author: Hamamatsu Photonics K.K.
Mini-spectrometertype No.
Spectral resolution (nm)
5 100
1 nm Typ.
3 nm
C9404CAHC10082CAHC10083CAH
C9407MA C9409MA
C9404CA C9404MC
C9405CA C9405MC
C10082CA C10083CA C10082MDC10083MD
6 nm to 8 nm
5 nm
C9406GCC9913GCC9914GB
7 nm to 8 nm
9 nmN E W
N E W
Selection by spectral resolution
Type No. Product typeBuilt-in
Image sensor
Spectral response range (nm)
1200 1400 1600 1800 2000 22001000800600400200
C10083CA
C10083MD
C9405CA
C9405MC
C9406GC
TM-VIS/NIR-CCD
Back-thinnedCCD image sensor
NMOS linearimage sensor
TM-VIS/NIR-MOS
TG-SWNIR-CCD
TG-SWNIR-MOS
TG-NIR
C10082MD
C10083CAH
TM-UV/VIS-CCD
TM-UV/VIS-MOSCMOS linearimage sensor
C9913GC
C9914GB
InGaAs linearimage sensorTG-cooled NIR- I
TG-cooled NIR-II
C9404CAH
C9404MC
TG-UV-CCD
TG-UV-MOS
200 to 400
500 to 1100
200 to 800
320 to 1000
900 to 1700
1100 to 2200
Spectralresolution
Max.(nm)
C10082CAH
C10082CA
RC-VIS-MOS
RC-VIS-MOS
Features
3
3
1 *
9
8
340 to 780
High sensitivity
Wide dynamic range
High sensitivity
Wide dynamic range
CMOS linearimage sensor
Back-thinnedCCD image sensor
CMOS linearimage sensor
7
8
Low noise(Cooled type)
High resolution
Wide dynamic range
High sensitivity
Wide dynamic range
CMOS linearimage sensor
Back-thinnedCCD image sensor
C9404CA High sensitivity
Back-thinnedCCD image sensor
Compact, low cost(OEM model)
Compact, low costwith driver circuit
(OEM model)
Non-cooled type
RC
ser
ies
TM s
erie
sTG
ser
ies
TG s
erie
s
TM-UV/VIS-CCD
TM-VIS/NIR-CCD
High resolution
High resolution
1 *
6
1 *( =320 to 900 nm)
8( =320 to 900 nm)
5( =550 to 900 nm)
5( =550 to 1100 nm)
* Typical
C9409MAN E W
C9407MAN E W
Selection guide
WAVELENGTH (nm)
SP
EC
TR
AL
RE
SO
LUT
ION
(nm
)
200 300 400 500 600 700 800 900 1000
8
7
6
5
4
3
2
1
0
C9404CA (Slit width 140 m, Optical NA 0.11)C10083CA (Slit width 70 m, Optical NA 0.22)C10082CA (Slit width 70 m, Optical NA 0.22)C9404CAH (Slit width 10 m, Optical NA 0.11)C10083CAH (Slit width 10 m, Optical NA 0.11)C10082CAH (Slit width 10 m, Optical NA 0.11)
Spectral resolution vs. wavelength
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Current Perspectives of ExtracorporealCirculation (Basel / Switzerland)16.03. - 17.03. 2007
Pathology Congress 2007 (Berlin / Germany)16.03. - 18.03. 2007
Measurable optical power (typical example)Sensitivity comparison (typical example)
Features
CCD type (with back-thinned CCD image sensor) CMOS type (with CMOS linear image sensor)
High sensitivityIdeal for low-light-level spectrophotometer
(fluorescence measurement, etc.)
Suitable for environments with relatively high light intensity(Spectrum measurement of light sources and absorbancemeasurement, etc.)
Type C9404CA, C9405CAC10082CA, C10083CA
C9404MC, C10082MD, C10083MD
Spectral resolution: 1 nm
C9404CAHC10082CAHC10083CAH
KACCB0133EB
KACCB0146EA
10-15 10-13 10-11 10-9 10-7
LIGHT POWER * (W)
C10082CA (CCD TYPE)
* Light power incident on mini-spectrometer through slit( =500 nm, integration time: 10 to 10000 ms)
C10082MD (CMOS TYPE)
WAVELENGTH (nm)
RE
LAT
IVE
SE
NS
ITIV
ITY
*
200 300 400 500 600 700 800 90010-5
10-4
10-3
10-2
10-1
100
1000
(Typ. Ta=25 ˚C)
* A/D count when constant light level enters mini-spectrometer through slit.
C10083CA(Slit width 70 m, Optical NA 0.22)C10083CAH(Slit width 10 m, Optical NA 0.11)C10082CA(Slit width 70 m, Optical NA 0.22)C10082CAH(Slit width 10 m, Optical NA 0.11)C10083MDC10082MD
Comparison of CCD and CMOS mini-spectrometersDrawing on our strength as a sensor manufac-turer, Hamamatsu offers CCD image sensorsspecifically designed for mini-spectrometers.
Our unique process technology yields ahigh CCD node sensitivity (6.5 µV/e-)High full well capacity and anti-bloomingfunction ensure a wide dynamic rangeHigh sensitivity over a wide spectral rangeand nearly flat spectral response character-isticsPixel size and number of pixels optimizedby taking resolution and stray light charac-teristics into account
Features:
Pixel sizeNumber of active pixelsActive areaSpectral response rangeHorizontal clock phaseVertical clock phaseCCD node sensitivityDark current (MPP mode)Readout noise
Full well capacity
200 to 11004 phase2 phase
6.550680
20033300
With anti-blooming
µmPixelsmmnm--
µV/e-
e-/pixel/se- rms
ke-
ke-
--
Parameter UnitS10420-1006 S10420-1106
14 x 14
1024 x 6414.336 (H) x 0.896 (V)
2048 x 6428.672 (H) x 0.896 (V)
VerticalHorizontal
Mini-spectrometers withCCD mounted
-
Dynamic rangeAnti-blooming
C9404CAC9404CAHC9405CA
C10082CAC10082CAHC10083CA
C10083CAH
Higher-orderlight cut filter
- -Window
Specifications
WAVELENGTH (nm)
QU
AN
TU
M E
FF
ICIE
NC
Y (
%)
0
100
80
60
40
20
1200200 400 600 800 1000
(Ta = 25 C)
Spectral response
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DPG (Dusseldorf / Germany)20.03. - 21.03. 2007
Congress of the German Physiological Society (Hannover / Germany)25.03. - 28.03. 2007
3 Mini-Spectrometer RC Series C9409MA, C9407MA
Ultra-Compact and Low Cost Type Mini-Spectrometer
The RC mini-spectrometers integrate a reflec-tive grating and a CMOS linear image sensorinto a compact case. Two models are provided: the C9407MA spec-trometer module with a built-in driver circuitand USB output port and the C9409MA OEMmodel spectrometer head.
Author: Hamamatsu Photonics K.K.
The C9407MA mini-spectrometer has an inter-nal driver circuit and is powered from USB buspower. Spectrum data can be easily collectedby guiding the light into the mini-spectrometervia an optical fiber and processing the acquired
data on a PC that is USB connected to themini-spectrometer. The C9407MA is suppliedwith sample software that allows settingmeasurement conditions, acquiring and sav-ing data, and displaying graphs.
ParameterSpectral response rangeSpectral resolution (spectral response half width)A/D conversionIntegration timeInterfaceCurrent consumption (USB bus power)Operating temperatureStorage temperature
5 to 10000
C9407MA
16
340 to 7809
100USB1.1
-20 to +70
+5 to +40
Unit
C CmA
-
nmnm
msbits
[Patent: 1 application]
Specifications
46
C9409MA C9409MA(4 ×) M2.6 DEPTH 3
50.011.5
73.0
340
30.0
11.5
53.0
Dimensional outline USBCABLE
PC
MINI-SPECTROMETER
QUARTZ CELL(For holding liquid sample)
FIBER
VIS FIBER LIGHT SOURCE(Halogen lamp)
Connection diagram
WAVELENGTH (nm)
A/D
CO
UN
T
3400
35000
30000
25000
20000
15000
10000
5000
390 440 490 540 590 790640 690 740
WHITE LED
3-COLOR LED
Measurement example (white LED and 3-color LED spectrum measurement)
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Spring 2007 Meeting BSDB/BSCB (Edinburgh / UK)29.03. - 31.03. 2007
Neurobioloy Conference 2007 (Goettingen / Germany)29.03. - 01.04. 2007
The C9409MA comes in a compact and low-cost unit, which is achieved by integratingoptical components such as collimating func-tion and focusing function into a glass body. The C9409MA also incorporates a CMOSlinear image sensor designed by Hamamatsu
for mini-spectrometers. The input/output ter-minals of the built-in image sensor are wiredto a flexible printed circuit board for easyelectrical connection to equipment whereC9409MA will be installed.
pixelsnmnmnm
nm/ CdBdB m-
-
m C C
Parameter UnitNumber of pixelsSpectral response rangeSpectral resolution (spectral response half width)Wavelength reproducibilityTemperature dependence of wavelengthSpectral stray light *1
Broadband stray light *2
SlitOptical NA
Image sensor
*1: When light of 550 nm wavelength is input, spectral stray light is defined as the ratio of the count measured at the inputwavelength to the count measured in a region of the input wavelength 40 nm.
*2: This is the ratio of the transmittance measured with light passing through an optical filter OG530 to the transmittancemeasured in the blocking region.
Optical fiber (core diameter)Operating temperatureStorage temperature
0.50.05-30-25
C9409MA256
340 to 7809
70 (H) 550 (V)0.22
CMOS linear image sensorS8378-256N
600+5 to +40-20 to +70
Specifications
28 28
28350
FLEXIBLE BOARD
Dimensional outline
GRATINGIMAGE SENSOR
FOCUSING FUNCTIONCOLLIMATING FUNCTION
GLASS BODY
FIBER
Optical layout in mini-spectrometer RC series
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Eurotoxpath 2007 (Nantes / France)23.04. - 27.04. 2007
Expo Electronica '07 (Moscow / Russia)25.04. - 28.04. 2007
4 S10362-11 Series
MPPC (Multi-Pixel Photon Counter)
The MPPC is a new type of photon countingdevice made up of multiple APD (avalanchephotodiode) pixels operated in geiger mode.The MPPC is essentially an opto-semicon-ductor device with excellent photon countingcapability and features low voltage operationand insensitivity to magnetic fields. Pulse waveform when using a linear
amplifier (120 times)(S10362-11-050U, M = 7,5 x 105)Author: Hamamatsu Photonics K.K.
The light we usually see consists of a streamof light particles (photons) that produce a cer-tain brightness. When this brightness falls toa very low level, the incoming photons are nowseparated from each other. Photon countingis a technique to measure low light levels bycounting the number of photons.Photomultiplier tubes and APDs (avalanchephotodiodes) are the most popular photoncounting devices.APDs are high-speed, high-sensitivity photo-diodes that internally amplify photocurrentwhen a reverse bias is applied. When thereverse bias applied to an APD is set higherthan the breakdown voltage, the internal elec-tric field becomes so high that a huge gain(105 to 106) can be obtained. Operating an APDunder this condition is called “geiger mode”operation. During geiger mode, a very largepulse is generated when a carrier is injectedinto the avalanche layer by means of incidentphoton. Detecting this pulse makes it possibleto detect single photons.The MPPC is made up of multiple APD pixelsoperated in geiger mode. The sum of theoutput from each pixel forms the MPPC out-put, which allows the photons to be counted.
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TIME
7NU
MB
ER
OF
PH
OT
ON
S
6
5
4
3
2
1
The MPPC delivers superb photon countingperformance. Connecting the MPPC to a linear amp will show sharp waveforms on anoscilloscope according to the number of detected photons.
The fact that the individual peaks are clearlyseparate from each other, proves there is littlevariation between the gains of APD pixelsmaking up the MPPC.
PULSELIGHT SOURCE
TRIGGER(LIGHT OUTPUT TIMING)
OPTICALATTENUATOR
OPTICAL FIBER
AMPLIFIEDMPPC SIGNAL
OSCILLOSCOPE
PULSED LIGHT
AMP
MPPCPOWER SUPPLY
AMPPOWER SUPPLY
MPPC
Connection example (MPPC output signal is displayed on an oscilloscope)
0
100
NUMBER OF PHOTONS
200
0 5 10 15 20
300
FR
EQ
UE
NC
Y (
NU
MB
ER
OF
EV
EN
TS
)
400
500
600
Pulse height spectrum when usingcharge amplifier
(S10362-11-025U, M = 2.75 x 105)
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2007 Technology & Innovation Forum (Chilton / UK)03.05. 2007
Anaesthology Congress (Hamburg / Germany)05.05. - 08.05. 2007
Photon detection efficiency is a measure thatindicates what percentage of the incidentphotons are detected. Not all carriers generatedby the incident photons will create pulses largeenough to be detected, so photon detectionefficiency can be calculated using the follow-ing equation. Photon detection efficiencyincreases as the bias voltage is increased.
PDE = Quantum efficiency x Fill factor xAvalanche probability
The fill factor has a trade-off relation with thetotal number of pixels. Their values determinepossible applications suitable for the MPPC(refer to page 10).
Geiger mode is a method for operating anAPD at a reverse bias higher than the break-down voltage. A high electric field is producedin the APD during geiger mode so that a dis-charge occurs even from a weak light input.This phenomenon is known as “geiger dis-charge”. The electron gain at this point is ashigh as 105 or 106 and the magnitude of theoutput current is constant regardless of thenumber of input photons.When a quenching resistor is connected tothe geiger mode APD (see “geiger mode APDand quenching resistor”), the APD operatesas shown in “geiger mode APD operation”.
Fill factor =Effective pixel size
Total pixel size
Avalanche probability =Number of excited pixels
Number of photon-incident pixels
MPPC is made up of multiple APD pixelsconnected in parallel and operated in geigermode. Since all APD pixels are connected toone readout channel, the output pulses fromthe APD pixels overlap each other, creating alarge pulse. By measuring the height or elec-trical charge of this pulse, the number of pho-tons detected by the MPPC can be estimated.Qout = C x (VR - VBR) x Nfired
C: Capacitance of one APD pixelNfired: Number of APD pixels that detected photons
Operation mode Reverse bias Gain
Normal mode Below breakdownvoltage
Dozens toseveral hundred
Geiger mode Above breakdownvoltage 105 to 106
Operation modes of APD
PH
OT
ON
DE
TE
CT
ION
EF
FIC
IEN
CY
(%
)
WAVELENGTH (nm)
0
10
20
30
40
50
60
70
200 300 400 500 600 700 800 900 1000
(Ta = 25 °C)
S10362-11-025U
S10362-11-050U
S10362-11-100U
Spectral response
VR : Reverse biasVBR: Breakdown voltage
PHOTON
VR (>VBR)
QUENCHING RESISTOR
GEIGER MODE APD PIXEL
Geiger mode APD and quenching resistor
Discharge (output from pixel)When photons strike an APD pixel during Geiger mode, a constant signal Q = C x (VR - VBR) is produced from the pixel, independent of the number of photons.
QuenchingWhen a current flows through the quenching resistor, the reverse voltage drops to VBR.
RechargeThe reserve bias returns to VR by recharge, so Gei-ger mode operation can begin again.
VOLTAGE
CU
RR
EN
T
VR
DISCHARGE(OUTPUT FROM PIXEL)
RECHARGE
GEIGER MODENORMAL MODE
VBR
QUENCHING
Geiger mode APD operation
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MIPTEC (Basel / Switzerland)07.05. - 10.05. 2007
XXIII Congreso Sociedad Espanola de Anatomia Patologica (Tarragona / Spain)16.05. - 19.05. 2007
MPPC (Multi-Pixel Photon Counter)
Gain of MPPC has excellent linearity vs.reverse bias.
Excellent photon counting capability(excellent detection efficiency versus numberof incident photons)Room temperature operationLow bias (below 100 V) operationHigh gain: 105 to 106
Insensitive to magnetic fieldsExcellent time resolutionSmall sizeSimple readout circuit operationMPPC module available (optional)
Features:
50 m PITCH400 PIXELS
100 m PITCH100 PIXELS
25 m PITCH1600 PIXELS
PETHEP calorimeter
Fluorescence measurementNeutrino detection
WIDE NARROWDYNAMIC RANGE
HIGH(to 90 %)
LOW(10 to 40 %)
FILL FACTOR
Application example
Gain vs. reverse bias
S10362-11-025U/C
REVERSE BIAS (V)
GA
IN
1 105
0
2 105
3 105
4 105
5 105 (Ta = 25 C)
76.6 76.8 77.0 77.2 77.4 77.6 77.8 78.0
S10362-11-050U/C, S10362-11-100U/C
REVERSE BIAS (V)
(Ta = 25 C)
GA
IN
0
1 105
2 105
3 105
4 105
5 105
6 105
7 105
8 105
9 105
1 106
2 106
3 106
4 106
Blue S10362-11-050U/CGreen S10362-11-100U/C
69.4 69.6 69.8 70.0 70.2 70.4 70.6 71.070.8
Parameter Symbol
Chip sizeEffective active areaNumber of pixelsPixel sizeFill factor *1
Spectral response rangePeak sensitivity wavelengthQuantum efficiency (λ = λp)Photon detection efficiency *2 (λ = λp)Operating voltageDark countTerminal capacitanceTime resolution (FWHM)Temperature coefficient of reverse biasGain
*1: Ratio of the active area of a pixel to the entire area of the pixel.*2: Photon detection efficiency includes cross-talk and afterpulses.Note: The last letter of each type number indicates package materials (U: metal, C: ceramic).
S10362-11 series-025U, -025C -050U, -050C -100U, -100C
1.5 x 1.51 x 1
1600 400 10025 x 25 50 x 50 100 x 100
30.8 61.5 78.5
40070 Min.
25 50 6577 ± 10 70 ± 10 70 ± 10
100 270 40035
250 220 25050
2.75 x 105 7.5 x 105 2.4 x 106
-----λ
λpQE
PDE--
Ct--M
270 to 900
Unit
mmmm
-µm%nmnm%%V
kcpspFps
mV/ C-
[Patent: 1 application]
Specifications
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DIPAC 07 Diagnostics and Instrumentation for Particle Accelerator Workshop (Trieste / Italy)20.05. - 23.05. 2007
Sensor + Test 2007 (Nuernberg / Germany)22.05. - 24.05. 2007
MPPC Module
5 C10507-11 Series (Under Development)
The MPPC module is a photon counting mod-ule capable of low-light-level detection. Thismodule consists of an MPPC device, current-to-voltage converter circuit, high-speed com-parator circuit, high-voltage power supply cir-cuit, temperature-compensation circuit, count-er circuit, and microcomputer. The modulealso has a USB port for connecting to a PC.The threshold level (detection level for onephoton) can be changed from a PC. TheMPPC module is designed to extract maxi-mum MPPC performance and so yields
excellent photon counting characteristics.Potential applications include nuclear medi-cine, medical diagnosis, drug discovery, highenergy physics experiments, fluorescencemeasurement, environmental chemical analysisas well as many other areas in a wide rangeof fields.
We are also developing MPPC modules thatuse an optical fiber attached to the detectorsection or a scintillator coupled to the detector.
ParameterInternal MPPCActive areaNumber of pixelsPeak sensitivity wavelengthOutput voltageDark countPhoton detection efficiencyTemperature coefficient of gainComparator threshold levelInterfaceBoard dimension
ConditionSymbol C10507-11-025U C10507-11-050US10362-11-025U S10362-11-050U
1 x 11600 400
400100
100 27025 50
±2.5Adjustable
USB
0.5 p.e.
25 ±10 C
---λp--
PDE---- 80 x 55
Unit-
mm-
nmmV/p.e.kcps
%%--
mm
Specifications
Measurement example of dark count rate areindicated below.
Author: Hamamatsu Photonics K.K.
MPPC
TEMPERATURESENSOR
VOLTAGECONTROLLER
CURRENT-TO-VOLTAGECONVERSION AMP
HIGH-VOLTAGEGENERATOR
MICROCOMPUTER
COMPARATOR
ANALOG OUTPUT DIGITAL OUTPUT
COUNTER
USBINTERFACE
MPPC MODULE
Block diagram
Dark count vs. reverse bias
S10362-11-025U/C
REVERSE BIAS (V)
DA
RK
CO
UN
T (
kcps
)
0.1
1
10
100
1000
76.0 76.2 76.4 76.6 76.8 77.0 77.2 77.4 77.6
(Ta = 25 C)
0.5 p.e. thr.1.5 p.e. thr.
S10362-11-050U/C, S10362-11-100U/C
REVERSE BIAS (V)
DA
RK
CO
UN
T (
kcps
)
69.4 69.6 69.8 70.0 70.2 70.4 70.6 71.070.8
(Ta = 25 C)
0.1
1
10
100
1000
10000
Blue S10362-11-050U/CGreen S10362-11-100U/C
0.5 p.e. thr.1.5 p.e. thr.
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Colloque des Neurosciences (Montpellier / France)22.05. - 25.05. 2007
6 S10200-02, S10201-04, S10202-08, S10202-16
Back-Thinned TDI-CCD
TDI-CCD captures clear, bright images evenunder low-light-level conditions during high-speed imaging. During TDI mode, the CCDcaptures an image of a moving object whiletransferring integrated signal charges synchro-nously with the object movement. This opera-tion mode dramatically boosts sensitivity tohigh levels even when capturing fast movingobjects. Our new TDI-CCD uses a back-thinned structure to achieve even higher quan-tum efficiency over a wide spectral range fromthe UV to the near IR region (200 nm to 1100nm).
TDI mode gives high sensitivityHigh-speed, continuous image acquisitionBack-thinned structure ensures high sensi-tivity from UV to near IRMultiple ports for high-speed line rate
Features:
Sequential imaging of high-speed movingsamplesInspection tasks on electronic parts production lineSemiconductor inspectionFlow cytometry
Applications:
2007 Technology & Innovation Forum(Aldermaston / UK)24.05. 2007
Author: Hamamatsu Photonics K.K.Bidirectional30 MHz/port
50 kHz
100 kHz
12 µm x 12 µm
Type No. Pixel rate
S10200-02S10201-04S10202-08
S10202-16
Pixel size Number ofactive pixels
Number ofports Line rate Vertical transfer
1024 x 1282048 x 1284096 x 1284096 x 128
248
16
Selection guide
Pixel sizeNumber of TDI stagesFull well capacity (vertical register)Anti-bloomingVertical clockHorizontal clock Output circuitCCD node sensitivityReadout noiseDynamic rangePackageWindow materialSpectral response range
Parameter Specification12 µm x 12 µm
128120 ke-
Full well capacity x 100 (Min.)3 phases2 phases
2-stage MOSFET source follower3.5 V/e-
100 e- rms1200
Ceramic DIPQuartz
200 nm to 1100 nm
[Patent: 11 applications]
Specifications
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30ème ASSISES D´ANATOMIE PATHOLOGIQUE(Bordeaux / France)24.05. - 25.05. 2007
Pathology Congress 2007 (DGP 2007) (Magdeburg / Germany)30.05. - 02.06. 2007
These speeds are expressed by the followingequation:
v = f x dv: Object speeds, signal transfer speedf: Vertical transfer frequencyd: Pixel size
In the diagram below, when the first stage char-ge is transferred to the second stage, an addi-tional charge is produced in the second stageby photoelectric conversion and accumulated.When this operation is continuously repeateduntil reaching the last stage M, a signal chargewhich is M times greater than the initial chargeis accumulated. This shows that TDI mode canenhance sensitivity up to M times higher thanordinary linear sensors. Since the signal chargeon each line is output from the CCD horizontalshift register, a two-dimensional image can becontinuously acquired. TDI mode also dramat-ically improves sensitivity variations comparedto frame mode operation because signals fromall pixels are accumulated in each line.
The back-thinned (back-illuminated) structureensures higher sensitivity in the UV through tothe near IR region, than front-illuminated types (200 nm to 1100 nm).
Feature 2TDI mode provides integrated exposure whilesynchronizing object movement with the signalcharge transfer timing. The signal charge isintegrated a number of times equal to the num-ber of vertical stages (128 stages on our TDI-CCD), so TDI mode yields enhanced sensitivityabout 128 times higher than ordinary linearimage sensors.
TDI (time delay integration) modeIn FFT-CCD, signal charges in each line are ver-tically transferred during charge readout. TDImode synchronizes this vertical transfer timingwith the movement of the object irradiating onthe CCD, so that signal charges are integrateda number of times equal to the number of ver-tical stages of the CCD pixels. In TDI mode, the signal charges must be trans-ferred in the same direction at the same speedas those of the object to be imaged.
Feature 1
SIG
NAL
TR
ANSF
ER
OBJ
ECT
MO
VEM
ENT
CH
AR
GE
Time1 Time2 Time3FIRST STAGE
LAST STAGE M
Schematic diagram showing integrated exposure by TDI mode
WAVELENGTH (nm)
0
500
1000
1500
2000
2500
200 400 600 900800 1000300 500 700 1100
3000 (Typ. Ta = 25 C)
PH
OT
O S
EN
SIT
IVIT
Y (
V/µ
J x
c
m2 )
Spectral response
WAVELENGTH (nm)
QU
AN
TU
M E
FF
ICIE
NC
Y (
%)
0
10
20
30
40
50
60
70
80
90
200 300 400 500 600 700 800 900 1000 1100 1200
100 (Typ. Ta = 25 C)
BACK-THINNED TDI-CCDS10200-02S10201-04S10202-08S10202-16
FRONT-ILLUMINATED CCD
Quantum efficiency vs. wavelength
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4th European FDSS users meeting (HPF / France)07.06. 2007
UKRC 2007 (Manchester / UK)11.06. - 13.06. 2007
Back-Thinned TDI-CCD
TDI-CCD is ideal for capturing images of fastmoving or rotating objects and is thus widelyused in line scan cameras for industrial robots,etc. The examples on the right, show capturingimage examples of a fast moving object andfast rotating object (an image of charactersprinted on a drum that were captured by a CCDoperating in frame mode and TDI mode).
Feature 3
TDI-CCD(2048 x 128 PIXELS)
DIRECTION OF SIGNALTRANSFER
Capturing image exampleof a fast moving object
DRUM
DIRECTIONOF ROTATION
TDI-CCD(2048 x 128 PIXELS)
DIRECTION OF SIGNALTRANSFER
DRUM
DIRECTIONOF ROTATION
TDI-CCD(2048 x 128 PIXELS)
DIRECTION OF SIGNALTRANSFER
Capturing image example of a fast rotating object
Frame mode imagingWhen the drum is in idle, a clear image withno blurring is obtained as shown in 1).However, when the drum is rotating, the framemode image is blurred as shown in 2).Although shortening the shutter time allowscapturing an unblurred image, the imagebecomes dark as shown in 3).
1) When drum is in idle:
2) When drum is rotating:
3) When drum is rotating (with short shuttertime):
TDI mode imagingIn TDI mode, signals are transferred in thesame direction and at the same speed as therotating drum, so a continuous image with noblurring is obtained as shown in 4).
4) Continuous image when drum is rotating:
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Medical Innovation Forum (London / UK)13.06. 2007
EACTA 2007 (Krakow / Poland)13.06. - 16.06. 2007
7 C10000-201
Board-Level TDI Camera
128
PIX
ELS
512 PIXELS
PORT
BIDIRECTIONALTRANSFER
PORT PORT PORT
PORT PORT PORT PORT
This structure allows bidirectional vertical charge transfer.
512 PIXELS 512 PIXELS 512 PIXELS
TDI-CCD sensor structure [Example: S10201-04, 2048 (H) x 128 (V) pixels, 4 ports on each side x 2
(bidirectional transfer)]
Using multiple amplifiers (multiple output ports)allows parallel image readout at a fast line rate.
Feature 4
Parameter SpecificationCamera type
Number of effective pixels
Image device structure
Pixel size
Effective active area
TDI readout direction
Output channels
Anti-blooming function
Pixel clock
TDI line rate
Full well capacity (Typ.)
Readout noise (Typ.)
Dynamic range (Typ.)
A/D converter
Lens mount
Interface
TDI line rate control
Analog gain control
Supply voltage / Power consumption
Camera control
Camera connector
Board type
2048 (H) x 128 (V) 1024 (H) x 128 (V)
Back-thinned type
12 µm (H) x 12 µm (V)
24.58 mm (H) x 1.536 mm (V) 12.29 mm (H) x 1.536 mm (V)
Bidirectional readout
2 ports (512 x 2)4 ports (512 x 4)
Lateral overflow drain (up to 100 times the full well capacity)
30 MHz
0.45 kHz to 50 kHz
100 ke-
130 e-rms
770
12 bits / 8 bits *1
C mountF mount
Camera Link (Medium Configuration)
Internal setting *2
External trigger
0 dB to 20 dB
DC +15 V, DC +5 V / 20 V・ACamera Link (using serial command line)
Camera Link x 2 / 9-pin D-sub (power) / BNC (trigger)
*1: Output bit is selectable by serial command.*2: Internal TDI line rate can be set in 33 ns steps.
Specifications
The board-level TDI camera C10000-201 isuseful in a wide range of imaging applica-tions requiring both high speed and highsensitivity, including in-line monitoring and inspection.Article 36 for other TDI camera models.
Author: Hamamatsu Photonics K.K.
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Laser 2007 (Munich / Germany)18.06. - 21.06. 2007
Association Française d´histopathologie(Tours / France)21.06. - 22.06. 2007
8 G10447-51/-54, G10208-51/-54, G10342-54
10 Gbps ROSA
Hamamatsu develops and produces advancedoptical receivers such as ROSA (receiveroptical sub-assembly) used for interconnec-tions between network devices. To support even higher speeds between net-work devices, we offer a product line-up devel-
oped specifically for optical transceivers inthe 850 nm, 1.3 µm and 1.55 µm bands thatconform to 10-Gigabit Ethernet and SONETstandards.
Hamamatsu has established technologies foraccurately testing and measuring device per-formance and characteristics required in lightreceiver devices for optical fiber communica-tions. In this way, high level product qualitycan be maintained, and we can set our sightson developing devices with even higher per-formance and more sophisticated functions.
Examples of device testing and measurement equipment
Author: Hamamatsu Photonics K.K.
Communication standard
XFP
10 Gbps Ethernet (IEEE802.3ae)
LRM SR LR ER
XPAK
X2
XENPAK
G10208-54
Transmission distance 220 m 300 m 10 km 40 km
G10447-54 G10518-54 G10342-54
G10208-51G10208-54
G10447-51G10447-54
G10518-51G10518-54
G10208-51 G10447-51 G10518-51
G10208-51 G10447-51 G10518-51Opt
ical
tra
nsce
iver
sta
ndar
d
Contact us formore information
Wavelength
SONET/OC-192
Contact us for more information
Communication standard
XFP
VSR SR-1 IR-2 LR-2
300pin
G10342-54
Transmission distance 600 m 10 km 40 km 80 km
G10342-54 G10342-54Under
development
Optic
al tra
nsce
iver s
tanda
rd
Wavelength 1.3 µm 1.3 µm 1.55 µm 1.55 µm
1.3 µm 1.3 µm 1.55 µm0.85 µm
Type number suffix indicates connector types. -51: SC connector with flexible board, -54: LC connector with flexible board
10 Gbps ROSA line-up (flexible board type)
High-speed oscilloscope(40 Gbps)
Optical component analyzer(for frequency measurement,50 Gbps)
Bit error rate tester
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2007 Technology & Innovation Forum (Culham / UK)28.06. 2007
COLOQ 10 (Grenoble / France)04.07. - 06.07. 2007
GaAs PIN photodiodes with preamp for SR G10447-51/-54
InGaAs PIN photodiodes with preampG10342-54
InGaAs PIN photodiodes with preamp forLRM G10208-51/-54
Eye diagram
-26 -18-19-20-21-22-23-24-2510-12
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
AVERAGE LIGHT LEVEL (dBm)
BIT
ER
RO
R R
AT
E
(Typ. Ta=25 , Bit rate 11.1 Gbps, PN=31)
Bit error rate
Pin = -13 dBm, 30 mV/div., 20 ps/div.
Bit rate 10 Gbps, PN = 31, NRZ, λ = 850 nm,extinction ratio 4.5 dB, Vcc = Vpd = 3.3 V,sensitivity 0.55 A/W
Eye diagram
Optical waveforms after MMF transmission of 300 meters
G10208-14-54 output waveform
Optical waveforms reproducedwith high fidelity
G10447-54
G10208-54
Low cost plastic connector typeSupports 10 Gbps Ethernet SR standard.G10447-54 (Ø 1.25 mm) is for XFP andXPAK, and G10447-51 (Ø 2.5 mm) for XEN-PAK, X2 and XPAKLarge active area: Ø 60 µmUses a GaAs PIN photodiode with a largeactive area (Ø 60 µm) compatible with multi-mode optical fibers, yet delivers a high-speedresponse of 10 Gbps at a low voltage (3.3 V)Trans-impedance: 6 kΩ Typ. (single-ended)Prevents receivable sensitivity deteriorationcaused by cross-talk from adjacent circuitsMinimum receivable sensitivity: -13.5 dBmTyp. (OMA, extinction ratio 3.0 dB)
Features:
Low cost plastic connector typeSupports 10 Gbps Ethernet LRM standard.G10208-54 (Ø 1.25 mm) is for XFP andXPAK, and G10208-51 (Ø 2.5 mm) for XEN-PAK, X2 and XPAKLarge active area: Ø 60 µmUses an InGaAs PIN photodiode with a largeactive area (Ø 60 µm) compatible with multi-mode optical fibers, yet delivers a high-speedresponse of 10 Gbps at a low voltage (3.3 V)Internal trans-impedance amplifier with AGCDelivers a linear output over a broad lightinput rangeMinimum receivable sensitivity: -15 dBmTyp. (OMA, extinction ratio 14 dB)
Features:
Compliant with XMD (10 Gbps MiniatureDevice)-MSASupports XMD-MSA standard for ROSA forXFPLow voltage operation: Vcc = Vpd = 3.3 V11.3 Gbps high-speed response even at lowvoltages (3.3 V)Optical return loss: 35 dB TypTrans-impedance: 6 kΩ Typ. (single-ended)Prevents receivable sensitivity deteriorationcaused by cross-talk from adjacent circuitsMinimum receivable sensitivity: -20.5 dBmTyp (average, extinction ratio 14 dB)
Features:
G10342-54
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32nd FEBS Congress Molecular Machines(Vienna / Austria)07.07. - 12.07. 2007
9th Int´l Conf. On Biology & Synchrotron Radiation (Manchester / UK)13.08. - 17.08. 2007
9 G10519-14
2.7 Gbps InGaAs APD ROSA
Author: Hamamatsu Photonics K.K.
This device is an InGaAs APD with preampassembled with a receptacle designed for anLC connector, which is compatible with SFPtransceivers.
High-speed response: 2.7 GbpsAlso compatible with STM-16 FEC (2.7 Gbps)High sensitivity: 27 mV/µW(λλ = 1.55 µm, M = 10)Delivers high sensitivity in 1.55 µm bandInsulated type: housing and signal groundare electrically isolatedElectrically isolating the housing from thesignal ground prevents sensitivity fromdeteriorating due to external ESD or surgevoltages
Features:
Dark state, RL = ∞M = 10, Pin = -27 dBm, -3 dB
Pin = -27 dBm, -3 dB
RL = 50 , f = 100 MHz
ID = 100 A
Tc = 25 to 75
2.7 Gbps, NRZBER = 10-10, PRBS = 223-1Extinction ratio 8.2 dBVR: the best voltage
Dark state, RL =∞VR = 0.9 x V BR
= 1.31/1.55 m
Parameter Condition Max.Min.Symbol Unit
Responsivity
Supply current
Cut-off frequency
Low cut-off frequency
Trans-impedance *2
Breakdown voltage
Temperature coefficientof breakdown voltageMinimum receivablesensitivityMaximum receivablesensitivity
Dark current
Optical return loss
Typ.
0.8
-
1.7
-
2
40
-
-
-7
-
27
0.9
25
2.0
7
3
55
0.11
-33
-5
40
35
-
35
-
100
-
65
0.16
-31
-
80
-
R
Icc
fc
fc-L
Tz
VBR
-
Pmin
Pmax
ID
ORL
M = 1, = 1.55 µm A/W
mA
GHz
kHz
k
V
V/
dBm
nA
dB
*1: Output: capacitive coupling*2: Single-ended (Vout+) measurement
W *1, unless otherwise noted)RL = 50m, Vcc = 3.0 V to 3.6 V, (Ta = 25 °C, = 1.55
Electrical and optical characteristics
-40 -30-31-33-35-37-39 -32-34-36-3810-1210-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
AVERAGE OPTICAL INPUT POWER (dBm)
BIT
ER
RO
R R
AT
E
(Ta=25 , 2.7 Gbps, PRBS=223-1, BER=10-10, Extinction ratio=8.2 dB, M=10)
Bit error rate
1 10010
-25
-26
-27
-28
-29
-30
-31
-32
-33
-34
-35
GAIN
YTI
VITI
SN
ES
ELB
AV I
EC
ER
MU
MINI
M
(Ta=25 , 2.7 Gbps, PRBS=223-1, BER=10-10, Extinction ratio=8.2 dB)
Minimum receivable sensitivity vs. gain
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10 Si PIN Photodiode (Under Development)
Si PIN Photodiode for Optical Interconnection
High-speed response (the gigahertz range) SiPIN photodiode employs a flip-chip structure,and utilizing MEMS technology has allowed usto develop a high-speed PIN photodiode withthe anode and cathode electrodes formed onthe same surface. This unique structure allowsflip-chip mounting.Hamamatsu is also developing back-emittingVCSEL arrays and back-illuminated GaAsphotodiode arrays and will continue furtherresearch and development to support variouscomponent mounting methods.
[Patent: 1 application]
Anode/cathode electrodes formed on thesame surfaceThis Si PIN photodiode has a unique struc-ture where the anode and cathode electrodesare formed on the same surface. It also deliv-ers high-speed response in the gigahertzrangeFlip-chip mountableFlip-chip mounting directly bonds the deviceto the electrodes on a PC board for highlyaccurate and high-density mounting of boardcomponents. Mounting in close proximity toamps and ICs helps drastically reduce theoptical module size
Features:
Author: Hamamatsu Photonics K.K.
A 4 element VCSEL array achieving 40 Gbpsresponse (10 Gbps each x 4 ch) is underdevelopment, which willl allow flip-chip mount-ing. The device has been developed using thelatest MEMS and photocathode technologies.The thinned wafer attached to the glass is ofa back-emitting structure.
ANODECATHODE
ANODE
ACTIVE AREA 100 m
ACTIVE AREA 100 m
WIRE
BUMPELECTRODE
CATHODE
Structural diagram
WAVEGUIDE
DRIVE IC
Si PIN PHOTODIODE
VCSEL SIGNAL PROCESSING IC
Typical application (mounted on waveguide-integrated board)
[Patent: 2 applications]
Chip photo (1 element)
Conventional structure New structure
Elkom (Helsinki / Finland)04.09. - 07.09. 2007
GO (Basel / Switzerland)04.09. - 07.09. 2007
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11 S10453 Series
CMOS Linear Image Sensors
Voltage output type with high-speed data rate(10 MHz)
Hamamatsu now introduces a voltage outputtype CMOS linear image sensor that operatesat a high-speed data rate of 10 MHz (conven-tional type 5 MHz). This CMOS linear imagesensor has a pixel size of 25 µm x 500 µm andis available in two types of 512 pixels (S10453-512Q) or 1024 pixels (S10453-1024Q).
Author: Hamamatsu Photonics K.K.
PHOTODIODE ARRAY
AMP + HOLD CAPACITY ARRAY
SHIFT REGISTER
HIGH-SPEEDREADOUTCIRCUIT
TIMING GENERATOR BIAS GENERATOR
Vdd GND
Video
EOS
CLK ST
Block diagram
Waveform
CLK
Video
*1: Integration time Ts=10 ms*2: Difference from Vo*3: Photo response non-uniformity (PRNU) is measured under the condition that
the device is uniformly illuminated by light which is 50 % of the saturation exposure level and is defined as follows:
PRNU=DX/X x 100 [%] X: average output of all pixels, DX: difference between X and maximum output
or minimum output*4: Excluding the start pixel and last pixel
Spectral response rangePeak sensitivity wavelengthDark output voltage *1
Offset output voltageSaturation output voltage *2
NoisePhoto response non-uniformity *3 *4
nmnmmVVV
mV rms%
Parameter UnitSymbol
λpVdVo
VsatN
PRNU
Min. Typ. Max.
200 to 100060015
0.85-
1.8-
--
0.42.5--
-301.2--
±10
λ
Electrical and optical characteristics [Ta = 25 ºC, Vdd = 5 V, V (CLK) = V (SP) = 5 V]
Video dat200 kHz 1 MHz
Variable integration time functionHigh UV sensitivity (current output)
Standard type
S8377/S8378 series(128, 256, 512, 1024 pixels)
S10111 to S10114 series(128, 256, 512, 1024 pixels)
Digital output typeS10077
(1024 pixels)
Standard typeS9226
(1024 pixels)
Surface mount,miniature type
S10226(1024 pixels)
Majorapplication
Spectrometer
Patternrecognition
Measurementequipment
Barcodereader
Variable integration time functionHigh UV sensitivity (voltage output)
S10121 to S10124 series (128, 256, 512, 1024 pixels)
Under development
CMOS linear image sen
100 ns
[Patent: 1 application]
21st European Congress of Pathology (Istanbul / Turkey)08.09. - 13.09. 2007
10th Conference, Methods & Applications of Fluorescence (MAF-10) (Salzburg / Austria)09.09. - 12.09. 2007
High-speed data rate (10 MHz)Our unique circuit design enables high-speedreadout. The output is a voltage output thatis easy to handle and process, making thislinear image sensor ideal for image readoutin measurement and industrial applications
Feature:
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Variable integration time for each pixelHigh UV sensitivity and smoothly varyingspectral response characteristicsOn-chip charge amp with excellentinput/output characteristicsBuilt-in timing generator allows operationwith only start and clock pulse inputsVoltage output type
Features:
a rate5 MHz 10 MHz
High sensitivity, high-speed typeS10453 series (512, 1024 pixels)
High-speed typeS9227
(512 pixels)
Surface mount,miniature type
S10227(512 pixels)
N E W
sor line-up
12 S10121 to S10124 Series (Under Development)
UV Enhanced Type with Variable Integration Time Function
S10121 to S10124 series are CMOS linearimage sensors with enhanced UV sensitivityand a variable integration time function.These image sensors also include a current-integration readout circuit utilizing the videoline and an impedance conversion circuit.External readout circuit is easy to configuresince the output signal is a boxcar waveformfor easy handling.
Author: Hamamatsu Photonics K.K.
200 600 1000300 400 800700 1100500 900 1200
WAVELENGTH (nm)
PH
OT
O S
EN
SIT
IVIT
Y (
mA
/W)
(Typ. Ta = 25 ˚C)
200
300
0
400
100
Spectral response
S10121-128QS10121-256QS10121-512QS10122-128QS10122-256QS10122-512QS10123-256QS10123-512QS10123-1024QS10124-256QS10124-512QS10124-1024Q
Type No.Number of
pixelsPixel pitch
( m)
50
Pixel height(mm)
128256512128256512256512
1024256512
1024
25
2.5
0.5
0.5
2.5
Selection guide
33rd European Conference and Exhibition on Optical Communication, ECOC 2007 (Berlin / Germany)16.09. - 20.09. 2007
ILMAC (Basel / Switzerland)25.09. - 28.09. 2007
[Patent: 1 application]
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13 S9674
Si Photodiode
S9674 is a highly reliable photodiode designedfor compatibility with lead-free solder reflowprocesses. The newly developed small, thin,leadless package reduces the required com-ponent mounting area. These features makeS9674 ideal for compact designs.
Wide operating/storage temperature range: -40 °C to +150 °CWide operating/storage temperature rangeideal for in-vehicle applicationsSurface mount, small, thin, leadless package:The newly developed package down to 5.7 mm x 4.0 mm x 1.4 mm helps drasticallyreduce the on-board mounting area
Features:
Author: Hamamatsu Photonics K.K.
INFRARED LED Si PHOTODIODE
RAINDROP WINDSHIELD
Application example (vehical windshield rain sensor)
If there are no raindrops on the windshield,the infrared light emitted from the infraredLED reflects from the windshield surfaceand strikes the photodiode. If there areraindrops on the windshield, the infraredlight does not reflect back to the photo-diode because the infrared light transmitsthrough the raindrops. Utilizing this prin-ciple will make it possible to sense rain-drops on a windshield.
Parameter Value
10
-40 to +125
-40 to +125
Symbol Unit
Reverse voltage
Operating temperature
Storage temperature
VR Max.
Topr
Tstg
V
°C
°C
Absolute maximum ratings
= p100 lx, 2856 K
VR = 5 V
VR = 0 V, RL = 1 kΩ10 to 90 %VR = 0 V, f = 10 kHz
Parameter Condition
320 to 1100
960
0.7
4.8
+0.1
±60
0.005
1.12
2
450
Max.Min.Symbol Unit
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Temperature coefficient of Isc
Half-value angle
Dark current
Temperature coefficient of ID
Rise time
Terminal capacitance
Typ.
-
-
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
1
-
-
-
pS
Isc
-
-
ID
TCID
tr
Ct
nm
nm
A/W
A
%/°C
degrees
nA
times/°C
s
pF
(Ta = 25 °C)
Electrical and optical characteristics
48th Annual Meeting of the European Society forPEADIATRIC RESEARCH (Prague / Czech Republic)06.10. - 08.10. 2007
Semicon Europa 2007 (Stuttgart / Germany)09.10. - 11.10. 2007
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14 P10210
Encoder Module
High resolution: 50 µm (during 2-phase output)This encoder module allows high-resolutionmeasurement when combined with a codeplate that has 0.2 mm pitch slits. Signals fromeach pair of the 4-element photodiode inputs
are compared and discriminated to output a2-phase digital signalSmall packageA smaller package than conventional prod-ucts reduces the component mounting area
Features:This encoder module uses a LED and a newlydeveloped photo IC containing a narrow-pitch4-element photodiode.
Author: Hamamatsu Photonics K.K.
ANODE
CATHODE
LED PHOTO IC
-+
-+
PREAMP OUTPUT BUFFERGND
PHOTODIODEHYSTERESIS COMPARATOR & BUFFER COMPARATOR
PD A
PD B
PD C
PD D
VOB
VOA
Vcc
Block diagram
(Ta = 25 °C, Vcc = 5 V, unless otherwise noted)
IF = 10 mA
VR = 5 V
IF = 10 mA
IOL = 1 mA
IF = 5 mA, f = 10 kHz
IF = 5 mA, f = 10 kHz
IF = 5 mA, C L = 10 pF
IF = 5 mA, C L = 10 pF
IF = 5 mA
Parameter Condition
1.9
-
650
-
-
-
3.0
6.0
50
50
90
0.5
0.04
-
Max.Min.Symbol Unit
Forward voltage
Reverse current
Peak emission wavelength
Operating supply voltage
Low level output voltage
High level output voltage
Supply current 1
Supply current 2
Duty ratio
Phase difference
Rise time
Fall time
Maximum response frequency
Typ.
-
-
-
3.0
-
4.5
-
-
35
35
60
-
-
50
2.4
10
-
7.0
0.4
-
-
10
65
65
120
2
0.3
-
VF
IR
p
Vcc
VOL
VOH
Icc1
Icc2
tAH/tAP
tBH/tBP
AB
tr
tf
f Max
V
A
nm
V
V
V
mA
mA
%
%
degrees
s
s
kHz
Input(LED)
Output(Photo IC)
Transfer characteristic
Electrical and optical characteristics
Vision 2007 (Stuttgart / Germany)06.11. - 08.11. 2007
UKAEA (Didcot / UK)08.11. 2007
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15 C10439
Photodiode Modules
16 C10442 Series, C10443 Series
PSD Modules
Author: Hamamatsu Photonics K.K.
The C10439 series are high-precision pho-todetectors that combine a Si photodiode andcurrent-to-voltage conversion amp. Threedifferent active areas are available.
Easy handlingAnalog voltage output allows observation ofsignals with a voltmeter, etc.Two switchable photo-sensitivity rangesHighly accurate output can be obtained byselecting the proper sensitivity range thatmatches the incident light level to be detectedCompact sizeOnly half the size of a business card. It at-taches directly to an optical mount rod (M4)
Features:
Author: Hamamatsu Photonics K.K.
These are high-precision position-detectorscombining a PSD and current-to-voltage con-version amp. Six types with different activeareas are available.
(Ta = 25 C)
Active area sizePeak sensitivity wavelength
Supply voltageDimension
High range, λ = λpLow range, λ = λpIo = 1 mAHigh range, -3 dBLow range, -3 dB
Parameter Condition C10439-012.4 x 2.4
C10439-025.8 x 5.8
960500
50 to +Vcc - 0.5
DC to 10DC to 1000±5 to ±12
19 (W) x 52 (H) x 46 (D)
C10439-0310 x 10
Unitmmnm
Vmm
V
Symbol-
λp
Vcc-
Photo sensitivity
Cut-off frequency
Output amplitude voltage
S
Vout
fc
mV/nW
Hz
0
Specifications
Built-in PSDActive area sizePeak sensitivity wavelengthPhoto sensitivityOutput amplitude voltageCut-off frequencySupply voltageDimension
Parameter CSymbol--
λp
SVout
fcVcc
-
C10442-01
1 x 6920
-55 *1
0 to -Vcc + 1.1DC to 16 *2
±5 to ±1222 (W) x 44 (H) x 40 (D)
C10442-03C10442-02
1 x 3 1 x 121-dimensional PSD
*1: λ = λp*2: -3 dB
Specifications
WAVELENGTH (nm)
PH
OT
O S
EN
SIT
IVIT
Y (
mV
/nW
)
(Typ. Ta = 25 °C)
200 400 600 800 1000 12001
1000
100
10
L RANGE
H RANGE
Spectral response
Productronica 2007 (Munich / Germany)13.11. - 16.11. 2007
Medica 2007 (Duesseldorf / Germany)14.11. - 17.11. 2007
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Easy handlingAnalog voltage output allows observation ofsignals with a voltmeter, etc. Output signalscan be easily converted to position informa-tion by using dedicated signal processingunits (C10459, C10460), which are availableas optional accessoriesHigh precision outputInternal low-noise amp ensures high preci-sion outputCompact sizeOnly half the size of a business card. Itattaches directly to an optical mount rod (M4)
Features:
10443-01
-60 *1
0 to -Vcc + 1.1DC to 16 *2
±5 to ±1234 (W) x 44 (H) x 40 (D)
C10443-03 Unit-
mmnm
mV/ WV
kHzV
mm
96012 x 12
9204 x 4 9 x 9
2-dimensional PSDC10443-02
(Ta = 25 °C)
WAVELENGTH (nm)
PH
OT
O S
EN
SIT
IVIT
Y (
mV
/ W
)
(Typ. Ta=25 ∞C)
3000
80
70
60
50
40
30
20
10
500 700 900400 600 800 11001000
C10442-01/-02/-03
C10443-03
C10443-01/-02
Spectral response
17 C10459, C10460
Signal Processing Units for PSD Modules
Converts the output from a PSD module(C10442/C10443 series) into position signalsand outputs them in both analog and digitalformat. It also supplies power to the PSDmodule.
(Ta = 25 °C)
Compatible PSD modulesAnalog outputDigital outputMinimum measurement time interval
Supply voltageDimension
Parameter C10460C10443-01/-02/-03
Unit-
V-
ms
Vmm
C10459C10442-01/-02/-03
-10 to +10Conforms to RS-232C (16-bit)
2
+9 to +18150 (W) x 30 (H) x 100 (D)
Specifications
Author: Hamamatsu Photonics K.K.
Both analog and digital outputsAnalog output: Connecting the output con-nector to a voltmeter shows an output voltagethat directly represents the position informa-tion. The output voltage indicates a positionfrom the center of the PSD (1 V = 1 mm)Digital output: High-resolution digital output(16-bit) allows serial connection (RS-232C)to a PC. Position information can be easilyloaded into a PC via the sample softwarethat comes with the unitAC adapter (+12 V) operationOperates by connecting the included ACadapter
Features:
CPUA/D
CONVERTER
RS-232CLINE
DRIVERPC
SAMPLESOFTWAREPOWER SUPPLY
PSDADDITION/
SUBTRACTIONAMP
DIVIDERIC
VOLTMETER
SIGNAL PROCESSING UNIT FOR PSD MODULE C10459, C10460
CURRENT-TO-VOLTAGE
CONVERSION AMP
PSD MODULEC10442/C10443 SERIES
AC ADAPTER
Set-up example
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19 C10508
APD Module
Author: Hamamatsu Photonics K.K.
This APD module is ideal for making high-sta-bility measurements while being operated ata high gain. This module consists of an APD,current-to-voltage conversion circuit, high-voltage power supply circuit, temperaturecompensating circuit, and a microcomputer.
18 C10475
Signal Processing Unit for Photodiode Module
Converts the output from a photodiode mod-ule (C10439 series) into digital signals. Alsosupplies power to the photodiode module.
(Ta = 25 °C)
Digital outputMinimum measurement time intervalSupply voltageDimension
Parameter RatingConforms to RS-232C (16-bit)
50+6 to +14
110 (W) x 30 (H) x 100 (D)
Unit-
msV
mm
Specifications
Author: Hamamatsu Photonics K.K.
High-resolution digital output (16-bit)High-resolution digital output (16-bit) allowsserial connection (RS-232C) to a PC.Measurement data can be easily loaded intoa PC via the sample software that comeswith the unitChoice of internal battery (+9 V) or AC adapter (+12 V) operationOperates from internal battery or dedicatedAC adapter supplied with the unitData logger functionMeasurements can be recorded in the internalmemory (data logger function) by connect-ing the unit to a PC. After setting the logger,measurements can be recorded withouthaving to connect to a PC
Features:
PC
AC ADAPTER
PHOTO-DIODE
SIGNAL PROCESSING UNIT FOR PHOTODIODE MODULE C10475
POWER SUPPLY
PHOTODIODE MODULE C10439 SERIES
A/DCONVERTER
CURRENT-TO-VOLTAGE
CONVERSIONAMP
CPURS-232C
LINE DRIVER
SAMPLESOFTWARE
Set-up example
Temperaturestability of gain
Spectral responserange
Frequencybandwidth
Communication
D
Gain
At gain = 2500 to +40
Parameter Condition S
Adjustableor seria
4
Specificatio
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20 S10359
Si Photodiode
High gain up to 250 times (previously up to30 times) due to digital temperature com-pensationThe internal microcomputer compensatesfor temperature-dependent variations in theAPD gain, so that stable measurements canbe made even at a high gain of 250 times (0 ºC to +40 ºC) Easily adjustable gainGain is adjustable in 5 steps by switch, orlinearly adjusted with an external commandvia serial communicationSupply voltage: +/- 5 VRequired supply voltage is +/-5 V, makingthe module easy to connect and use
Features:
Author: Hamamatsu Photonics K.K.
The S10359 is a high-reliability Si photodiodewith stable sensitivity to ArF excimer laser (λ = 193 nm).
Highly reliable operation even during expo-
sure to ArF excimer laser (λλ = 193 nm)Newly developed ultra-thin PN junction tech-nology achieves high reliability during expo-sure to ArF excimer laser beams No deterioration in UV sensitivity due tooutgassingUnique package structure contains no resinmaterial and will not cause outgassing, whichmight lower UV sensitivityLarge active area: 10 mm x 10 mmThe active area of 10 mm x 10 mm (identicalto S9683) is divided into 4 segments
Features:
RE
LAT
IVE
SE
NS
ITIV
ITY
(%
)
NUMBER OF SHOTS
[Typ. ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz, =193 nm, pulse width=15 ns (FWHM)]
5 x 1061 x 1060
1 x 107
40
20
60
80
100
120
CONVENTIONAL TYPE
S10359
Sensitivity change after exposureto ArF laser
(Ta = 25 °C)
Spectral response rangePeak sensitivity wavelengthPhoto sensitivityDark current
Rise time
Terminal capacitance
λ = 193 nmVR = 10 mVVR = 0 V, RL = 1 k10 to 90 %VR = 0 V
Parameter Condition Min.
-45-
-
-
Typ.
193 to 100076060
0.02
1
0.5
Max.
--
0.5
-
-
Unit
nmnm
mA/WnA
s
nF
Symbol
λp
SID
tr
Ct
Specifications
RESPONSE SPEED (Hz)
DC103
104
105
106
107
109
1010
108
SE
NS
ITIV
ITY
(V
/W)
AB
SO
LUT
E V
ALU
E
100 10 k10 1 k 100 k 1 M 10 M 100 M 1 G
2-stage thermoelectrically cooled APDDC to 5 kHz, -1.5 x 109 V/W
DC to 100 kHz-1.5 x 108 V/W
1 MHz to 1 GHz2.5 x 105 V/W
9 types are available with differentactive areas and wavelengths4 kHz to 100 MHz
-1 x 104 V/W
1-stage thermoelectricallycooled APD
10 kHz to 100 MHz2.5 x 105 V/W
DC to 10 MHz1.5 x 106 V/W
C4777-01
C5460-01
C5460
C5658
C5331 series C4777
DC to 10 MHz1.5 x 106 to 1.5 x 107 V/W
C10508
Sensitivity and response speed
(Ta = 25 °C)
DC to 10 M
Serial
Hz
-
Specification Unit
±5 Max. %
e by switch (5 steps)al communication
400 to 1000 nm
-
ons
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21 L10415 Series, L10526 Series
Newly Developed CW Laser Diodes
The λ = 940 nm has just been added to thefamily of 1 W – 2 W CW laser diodes.
The L10415 series (1 W) and L10526 series(2 W) are newThe Ïveloped CW laser diodeswith a peak emission wavelength λ = 940 nm,featuring high optical power of 1.0 W withboth Ø 9.0 CD package and OHS package,and 2.0 W with the OHS packages.These are single-chip, single element type, andthe emitting area is small (100 µm x 1 µm). The small emitting area makes it easier tofocus on a small spot with optics.The laser diodes can be used for variousapplications such as pumping of solid statelasers, material processing, medical instru-ments and many more.
22 C9536-01, H9958 Series
Power Meter for Photo Catalyst
The latest addition to our UV power meterrange are the H9958 sensor head and C9536-01 controller for photo catalyst applications.
The photo catalyst material has to be excitedby a UV light source shorter than 380 nm.Performance of the photo catalyst is deter-mined by light absorption, it is therefore nec-essary to clarify the lamp type (or spectralresponse depending on lamp type).
With its flat sensitivity in the UV range from300 nm to 410 nm and no response in thevisible range, it is possible to measure lightpower without correction.This is required forinternational traceability.
Current line-up of the wavelength for Hamamatsu > 1 W CW laser diodes is, 808 nm, 830 nm, 940 nm and980 nm
Author: Yasuhiro Hayashi Hamamatsu Photonics K.K.
Peak emission wavelength 940 nm +/-3 nmHigh radiant flux density emitting area size:100 µm x 1 µmHigh stabilityLong lifeCompact
Features:
Pumping source for solid state lasersMaterial processingMedical instrument
Applications:Author: Lorraine Rolland Hamamatsu Photonics France
Measurement modeintegration
Weight
Sensor head H9958
Spectral response 310 nm to 380 nmEffective areaMeasurement range 1 µW /Power supply internal
one shot mode that measurescontinuous mode that continuou
mode that display(it is possible to meas
External interfaceDimensions sensor head 75 m(W x H x L) controller 110 m
sensor headcontroller
Three types of packages are available Ø 9.0CD (suffix number is -04), side out OHS (-06)and head out OHS (-07).
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23 LC-L1
A New Type of UV-Light Source
Hamamatsu introduce a new type of UV-lightsource, the LC-L1.
The LC-L1 uses UV-LEDs at 365 nm with morethan double the intensity of conventional UV-LEDs. The UV-light intensity is 4600 mW/cm2.With a lifetime of more then 20,000 hours, thetime consuming replacement of lamps nowbecomes obsolete.
The LC-L1 can support up to four fiber out-puts with individual control of each outputpossible. The UV-light intensity can here bemonitored with a direct connection to a UVchecker at the light source.
The applications for the LC-L1 are UV-gluingof adhesives and UV excitation of analyticalsubstances (fluorescence).
Author: Klaus Peter Aicher Hamamatsu Photonics Germany
Stable for long term operation and no deterioration by UV lightCompact size and portable
Features:
C9536-01 Angular response
C9536-01 Spectral response
H9958-01
300 nm to 410 nmdia = 10 mm
cm2 to 100 mW / cm2
battery and AC adapters power each time START is pressedusly measures power in 1s intervalss integration result of a fixed timeure it until five minutes every second)
RS-232Cm x 55 mm x 18 mm
mm x 75 mm x 20 mmapprox. 160 gapprox. 285 g
Radiant intensity
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25 L10290
High Power UV-VIS Fiber Light Source
Light measurement technology is used inmany applications including industrial andmedical diagnosis, environmental monitoringand academic fields.
Hamamatsu introduce a newly developedUV-visible light source, the L10290. Using a“high brightness lamp”, the L10290 providestwice the radiant intensity compared to con-ventional models.
The UV-VIS fiber light source contains a highstability deuterium lamp and a tungstenhalogen lamp in a compact case and outputlight through a light guide.
The deuterium lamp and tungsten halogenlamp are precisely assembled into a dedicatedlamp housing to ensure optimum operation,thus allowing high stable lamp operation overa long service life without any special align-ment.
It's compact and lightweight making it idealfor use with all types of portable devices.
Author: Roberto Calcaterra Hamamatsu Photonics Italy
24 Super and Ultra Bialkali Photocathodes
One Step Beyond
The newly developed super bialkali (SBA)and ultra bialkali (UBA) photocathodes havepushed the boundaries of photomultiplier tubequantum efficiency (QE).
Generally, bialkali photocathodes offer a typ-ical quantum efficiency of 27 % at peakwavelength. The super bialkali photocathodefeatures a typical quantum efficiency of 35 %.This results in approximately 30 % higheroutput signal when compared to a standardbialkali photocathode.
In the case of the ultra bialkali photocathode,60 % higher signal is achievable due to itstypical quantum efficiency of 43 %.
These new types of photcathodes will initiallybe applied to selected photomultiplier types,such as the 2” R6231 and 3” R6233. Metalpackage photomultipliers will follow in thenext few months.
The excellent quantum efficiency of thesenew photocathodes will offer huge benefitsin applications such as gamma cameras formedical diagnosis, environmental analysersand high energy physics experiments.
Author: Siegfried Schmid Hamamatsu Photonics Germany
Spectral response
Quantum efficiency
Photocathode Type Availability
Super bialkali (SBA) 32 % 35%
QE at peak wavelength
Min. Typ.
Ultra bialkali (UBA) 38 % 43% Metal package PMT TO-8 type and 28 mm square type
Metal package PMT TO-8 type, 28 mm square type and 28 mm to 76 mm diameter head-on PMT (glass bulb type)
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26 L10366
New High Intensity UV Light Source Module
Hamamatsu is pleased to introduce the newL10366 high intensity UV light source module.The D2 lamp is supplied with MgF2 window,facilitating the emission of short wavelengthvacuum ultraviolet radiation, down to 115 nm,thus the L10366 module provides high inten-sity output over the 115 nm to 400 nm wave-length range. The L10366 features a new highpower, high stability, long lifetime deuterium(L2D2) lamp, which emits up to 4x the inten-sity, compared to our previous VUV sources.For vacuum UV applications, the lamp hous-ing can be supplied with a choice of industrystandard vacuum flanges, to allow easy inte-gration into customer’s existing vacuumequipment. This new VUV lamp module hasalso been designed to eliminate the need forwater-cooling, which was required for use withour previous generation of 150 Watt highpower D2 lamps. The L10366 features forcedair-cooling, an integrated fan and all drive andcontrol electronics, making this unit “plug andplay” for the end-user.
Author: Tim Stokes Hamamatsu Photonics UK
High UV intensity (4x compared to previousVUV sources)Emits short wavelength VUV down to 115 nmLong life time (2000 hours guaranteed at230 nm)Very high output stability (0.05 % peak topeak fluctuation)Air cooled (no water re-circulation needed)No optical alignment needed
Features:
UV spectrophotometerFluorimeter and spectrofluorimeter UV radiation tolerance of materialsExcitation light sourceGermicidal light sourceOptical CVDPhoto-ionisation (PID)Electrostatic removal (for semi-conductorwafers, LCDs, etc.)
Applications:
Dimensional outline
High output: twice the intensity (comparedto conventional types)High stability: fluctuation 0.004 %p-p typ.(equivalent to 2 x 10-5 A.U.)Long life lamp: 2000 hoursExternal controlShutter function
Features:
SpectrophotometryEnvironmental measurementAbsorption spectrum measurementPharmaceutical testingFilm thickness measurement
Applications:
Spectral distribution
UV resistant
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27 LF1
High-Power pulsed Light Source
Hamamatsu presents the LF1, a new high-power pulsed light source.
This new high-power pulsed light source con-sists of a 40 W Xe-flash lamp, power supplyand a control circuit. The light is coupled toa light fiber where a wide variety of differentfibers (single-, multi-fibers) can be used. Thespectral range is 290 nm to 1600 nm withpulse flashes of 2 µs to 4 µs (FWHM), with alifetime of about 5 x 107 flashes and a maxi-mum repetition rate of 70 Hz.
When compared to a conventional Xe-highpressure lamp, the LF1 pulse peak intensityis 2000 times higher than a 35 W Xe lamp.
The repetition rate and intensity can be con-trolled via a computer, allowing synchroniza-tion with an external trigger e.g. with CCDcameras.
Author: Klaus Peter Aicher Hamamatsu Photonics Germany
Emission pulse waveform
Spectral radiation
1.28 J
External control terminal
Parameters Value
Max. lamp input power 40 W Max. lamp input energy(per flash)Max. repetition rate 70 HzFlash duration (FWHM) 2 µs to 4 µs Light output stability +/- 5 %Spectral range 290 nm to 1600 nmLamp supply voltage 300 V to 1000 VLamp life time 5 x 107 flashesInput voltage (AC) 100 V or 240 VWeight Approx. 6.1 kgDimensions (W*H*D) 120 x 230 x 300 mm3
RS-232C; D-sub 25-pin connector
LF1 conforms to CE EMC directives andCISPR Class A.
The LF1 is ideal for applications such as opticalinspection, high-end strobe light source andfor UV excitation light source (fluorescence).
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28 H10330-25, -45, -75
NIR PMT Module
Weak signals in the near infrared region areoften difficult to detect because most sensorsbetween 1000 nm and 1700 nm have eitherno gain or a very small active area. For manyyears Hamamatsu has been developing pho-tomultiplier tubes with photocathodes that candetect radiation in the 950 nm to 1700 nmregion of the spectrum. These devices havelarge detection areas of 1.6 mm and a noise-free gain, which is typically one million. Theunique dynode structure of the photomultipli-ers generates a rise time of 900 ps and atransit time spread (TTS) as short as 300 ps.This makes these devices ideal for measuringlow levels of light coming from singlet oxygen,nanoparticles and carbon nanotubes. Signalprocessing can be performed using photoncounting or by analog means. For fluorescencelifetime measurements or for photon migrationstudies, these devices can be used in a time-correlated photon counting mode (TCPC). TheH10330 series of the NIR PMT module pack-ages an infrared photomultiplier in a vacuum-sealed housing. Thus, the need for a vacuumpump is eliminated. A peltier cooler is used tocool the photomultiplier. The system requiresneither liquid nitrogen nor water. It also reducessystem cool down to 20 minutes. For colli-
Author: Ken Kaufmann Hamamatsu Photonics U.S.A
NIR sensitivityNoise free gain: 106
Rise time: 900 ps TTS: 300 psEffective detection area: 18 mmCompact size and lightweight
Features:
NIR fluorescence and chemiluminescenceDiffuse optical tomographyCarbon nanotube emissionNanoparticle emissionSinglet oxygen studiesTime correlated single-photon counting
Applications:
Gain
Spectral response
mated light the effective active area is 18 mm.To minimize setup time, optional adapters foran optical fiber or one for a monochromatorare available. For the first time we have amodule with a cutoff at 1200 nm. For meas-urements below about 1200 nm, this module,the H10330-25 has the advantage of lowerdark current.
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29 R8900-00-C12, R8900U-00-C12, R8900-00-M4, R8900-00-M16
New Position Sensitive Photomultiplier Tubes
For many years Hamamatsu has been manu-facturing a wide variety of multi-channel pho-tomultiplier tubes. The introduction of suchtubes stimulated new markets dedicated toscintillation mammography scanners and com-pact animal PET scanners. It has also enabledfurther development of gamma cameras andother systems for radiation monitoring andmedical research.
These applications put high demands on theperformance of photomultiplier tubes such ashigh energy resolution, high spatial resolution,good uniformity, high stability, etc. In order tomeet such requirements, Hamamatsu con-stantly develops new photomultiplier tubesand improves their performance.
To meet the continual demands of such appli-cations, Hamamatsu has expanded their rangeand introduce a new series of position sensi-tive photomultiplier tubes.
The new R8900 series features high spatialresolution, wide effective area and are light-weight and compact. The R8900-00-M4incorporates a 4 (2 x 2) channel multianodethe R8900-00-M16 incorporates a 16 (4 x 4)channel multianode in a 26 mm square enve-lope, while R8900-00-C12 and R8900U-00-C12 have 6 (X) + 6 (Y) cross plate anodesarranged in two intersecting layers. These newseries of photomultipliers have a bialkali pho-tocathode with a spectral response from 300nm to 650 nm, which fits the emission spectraof most scintillators. The R8900U-00-C12 issupplied with an insulation cover.
The R8900 series have a compact metalchannel dynode construction designed usingHamamatsu´s sophisticated design capabili-ties and manufactured by our unique microma-chining technology. The overall length of eachtube is quite short because metal channeldynodes are very thin and assembled in closeproximity to each other. So, it delivers fastresponse and features very low cross-talk dur-ing secondary electron multiplication. Thussuch metal channel dynode structure appliedin R8900 series is ideal for position sensitivemeasurements.
Author: Andrey Makarets Hamamatsu Photonics Norden
High spatial resolutionWide effective areaFast time responseCompact and lightweight
Features:
Animal PET (positron emission tomography)Compact gamma cameraScintillation mammography
Applications:
Gain
Spectral response
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30 C9744
Photon Counting Unit
For low light measurements, photon countingusing a photomultiplier tube is superior in termsof stability, detection efficiency and signal tonoise ratio when compared to conventionalanalog signal measurement.
Photon counting units are used to convert thesingle photoelectron pulse from the PMT intoa 5 V TTL compatible pulse which can beprocessed by digital devices.
After initial amplification, the photoelectricpulses have to be separated from the lowernoise pulse and the higher level pulses gener-ated by cosmic radiation.
High count rates demand powerful photoncounting units. The high-speed electronic cir-cuit of the C9744 allows measurements withhigh output linearity, up to 107 s-1.
If the count rate is higher than 10 MHz, aprescaler can divide the number of counts by10, eliminating the need for a high-speedcounter.
The photons can be counted by simply con-necting a stand-alone or a PC-based counterto the photon counting unit.
Author: Dieter Habben Hamamatsu Photonics Germany
Dimensional outline
Set-up examples
Count linearity
Pulse-pair resolution
Supply voltage
Parameter C9744 Unit
Input impedance 50 OhmDiscrimination level (input conversion) -0.4 to -16 mVRequired PMT gain 3 x 106 -Prescaler ÷1 ÷10 -
÷1 4 x 106 s-1÷10 1 x 107 s-1÷1 25 ns÷10 10 ns
Output pulse CMOS 5 V, POSITIVE LOGIC -+5.0 V +/- 0.2 V, 130 mA / -
-5.0 V +/- 0.2 V, 50 mADimensions (W x H x D) 90 x 32 x 140 mm
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31 C10413
Color X-Ray ScannerColor your X-Rays and See More!
The C10413 color X-ray scanner opens newdimensions in the field of X-ray.X-ray users can now detect previously hiddendetails.
Usual X-ray devices only show the X-ray pat-tern of the object. In these grey shade imagesmany details are hidden.
However X-rays contain a lot more information.The X-rays experience different degrees ofattenuation depending on the kind of materialthey are going through. The C10413 canmeasure these different energies of the X-raybeams and thus it can show the compositionof the object in a clear color image. Unlikeconventional X-ray images which can only
show the density and the structure of theobject. The X-ray color sensor allows us afascinating view on the composition of theobject from its different materials.
Besides X-rays, the energy differentiationmethod also offers benefits for measuringother particles like radioisotopes. For example,for the highly detailed spectrum measurementof gamma rays and X-rays.
What do the people at Hamamatsu put insidethe C10413?
The 64 elements CdTe array of the C10413makes a direct energy conversion with highradiation detection efficiency.
An ASIC contains five comparators for eachpixel, which allows for the individual choice offive different energy levels. A signal processorprepares the output image. Connection to thePC is made via the USB interface. The controlsoftware can store all measurement resultsfor later processing
Author: Dieter Habben Hamamatsu Photonics Germany
Simultaneous measurement of images at different energy regions
Gamma-ray and X-ray spectrum measurement
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32 L10101
New Sealed Type 100 kV Microfocus X-Ray Source
The new L10101 was developed using the lat-est optical design techniques and Hamamatsustate of the art “sealed tube” microfocus X-raytechnology.
The microfocus X-ray source unit is a stand-alone unit, which can also be used as a build-ing block for integration into a system.
Applications are wide ranging and includesemiconductor metrology to improve yield andchip quality, complex electronic devices analy-sis such as BGA quality test and other in-lineX-ray inspection systems. The focal diameterof the microfocus tube is 7 µm (down to 5 µmat 4 W). This new source offers excellent sta-bility of spot size, spot position and intensity.
Author: Klaus Peter Aicher Hamamatsu Photonics Germany
Dimensional outline
Application example
Author: Alberto Verga Hamamatsu Photonics Italy
A 6.8 mm short FOD (focus to object distance)allows you to acquire X-ray images withhigher magnification ratioA sealed type X-ray tube with 5 µm focal spotallowing clear images even at high magnifi-cationMaximum output power 20 W
Features:
X- ray CT systemsNon-destructive inspection system (in-line/off –line) Applicable objects:- Electronic components- Printed circuit board- Plastic and metal components
Applications:
Specifications
Unit
Max. voltage kV 100 Max. current µA 200 Max. output W 20 Focal spot size µm 5 to 7 (4 W) / 30 (20 W)Focal spot switch Auto control by outputFOD mm 6,8Beam angle degree 39Control method - PC direct control
Specifications
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33 C4880-50-26WD
X-Ray Diffractometer for Material Science and Imaging usingHamamatsu C4880-50-26WD Camera
At the German based DESY synchrotron andits Hamburg synchrotron laboratory HASYLAB,a new X-ray diffractometer equipped with anovel CCD camera imaging system has beeninstalled for X-ray diffraction investigations ofpolycrystalline materials.
Several physical properties of materials arenot only given by their original compositionbut may also be modified during processingand use. Understanding and consideration ofthese processes and their impact on theirstructure and the relation to their performanceare very important for designing, developmentand further improvement of materials.
Several microbeam techniques with synchro-tron radiation were developed in the past.Most of them faced disadvantages of timeconsuming scans and limitation with dynamicprocesses and the need for extremely precisegoniometers in order to ensure that the samesample region is always investigated.
Now, a newly developed experimental tech-nique using a microchannel plate (MCP) as acollimator array and a position sensitive detec-tor, namely a CCD-camera, solved this prob-lem by defining the locations on the samplenot at the primary side between source andsample but at the secondary side betweenthe sample and detector. Each MCP channelacts as a collimator tube pointing to a certainlocation of the sample and the array of theparallel MCP tubes provides an entire intensitydistribution or image as a result of the radia-
tion diffracted by the crystallites in the sampleand possibly the fluorescence radiation too.This raw data is used to determine the distri-bution of certain elements or even differentcompounds of the same element and givescomprehensive and important informationabout the material under test.Behind the MCP collimator a special CCDcamera is used to create an actual image ofthe X-ray diffraction patterns. Here theHamamatsu C4880-50-26WD digital CCDcamera is used with the following technicalspecifications:
Experimental setup:The sample (2) on a goniometer (3) is irradiatedby a collimated monochromatic X-ray beam (1).The diffracted beam (5) from the whole illuminatedarea (4) is collimated by a microchannel plate(MCP) (6) mounted into a Pb-plate (9). The colli-mated beam (7) is detected by the HamamatsuC4880-50-26WD digital CCD camera, whichcan be shifted allowing several exposures.
X-ray diffractometer principle
Technical drawing
Specifications:
Type: C4880-50-26WD
Back-thinned full frame transfer Image device CCD with Beryllium-window
with MCPEffective area 13.3 mm x 13.3 mmNumber of pixel 1024 x 1024Pixel size 13 µm x 13 µmQ.E. >90% @ 3.235 keVExposure time 20ms (min.)Frame rate 3.05 HzDark current 0.0012 e-/px/sReadout noise 4 e- r.m.s.
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Author: Bertram Lohmüller Hamamatsu Photonics Germany
The asymmetry (marked by the arrows) resultsfrom a steep residual stress gradient in thesample
In the images the cell structure and lateralinhomogenity of the material is visible. Thesample area here is 9.0 mm (horizontal) x 8.1mm (vertical).
The PETRA ring (positron electron tandem ringanlage) has a total length of 2304 m and allowsthe acceleration of electrons and positrons upto 19 GeV.
The HERA ring (hadron electron ring anlage)has a total length of 6336 m and allows theacceleration of electrons up to 27.5 GeV andprotons up to 920 GeV.
The special camera, which is used with thisapplication, is a result of an intense coopera-tion between the customer and its specialrequirements and Hamamatsu SystemsDivision engineers with their expertise andexperiences. It is an excellent example of howa solution was provided, which could not havebeen achieved by simply using standard stockdevices. A new application was transferredfrom theory into reality, expanding materialresearch which leads to new industrial prod-ucts.
This image was taken using a light-opticalmicroscope after metallographic preparationand etching. The cell structure is clearly visible.The small white and dark islands are the restof the eutectic phase and pores of a few 10µm in size.
C4880-50-26WD CCD camera mounted at the newdiffractometer set-up
Microstructure of a random cut of nickel basedsuper alloy CMSX-4
X-ray diffraction image of the nickel based superalloy CMSX-4 with angle setting of 44.23°
X-ray diffraction image of the nickel based superalloy CMSX-4 with angle setting of 44.39°
Typical intensity profile of the diffractedbeam X-airborne image of DESY synchrotron facility
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34 C10400
New OEM X-Ray Line Scan Camera
The new C10400 camera is the latest additionto our X-ray linescan camera series.
Equipped with a 10-bit A/D conversion, theC10400 also provides all the benefits of ourstandard camera series, C9750. Featuresinclude high-speed read-out, low energyresponse down to 10 kV and 200 µm pitch size.CameraLink interfaces are available as anoption.
For many applications in the field of qualityassurance, a 10-bit camera is the solution foracquiring high quality images. The C10400offers an advanced OEM camera system ata very attractive price.
Author: Stefan Kappelsberger Hamamatsu Photonics Germany
Low energy type (10 kV to 40 kV) optionHigh speed optionsCameraLink interface option
Features:
Quality assurance of foodstuff and agriculture products In-line inspection of electrical componentsProduction control in the wood industry,aluminium die-casting, packaging, etc. Sorting in recycling processesTyre inspectionSecurity inspectionMedicine and medical industry
Applications:
35 C9750 Series, C10400 Series, X-Ray
X-Ray in Agriculture – Application N
The use of X-ray non-destructive testing hasbecome more widely used in various applica-tion fields. Successful experiences in applica-tions such as electronic board inspection andfood contamination suggests that good resultscan be obtained in the agricultural field.
X-ray absorption imaging can be a very effec-tive technique to sort fruits, such as detectingrotten portions that are not yet detectable byvisual inspection. For example, X-ray com-puted tomography (CT) can be used to monitorthe internal quality changes in peaches duringripening. X-ray absorption allows the determi-nation of physiochemical contents: moisturecontent and titratable acidity decreased signif-icantly with post-harvest ripening time, whilepH and soluble solids increased with post-harvest ripening time. The X-ray absorptionis directly related to density, moisture con-tent and titratable acidity [1].
X-ray inspection is an effective method ofinspection of walnuts, pistachio nuts andwheat kernels for internal insect infestation;insect infestation creates tunnels within the nutand this corresponds to a reduced density ofthe natural content of the nut and to thereplacement of that content by insect debrisand air, which have lower X-ray absorptionproperties [2].
Specifications:
40 kV to 160 kV
Sensor element pitch
Detection method Scintillator Effective X-ray tube voltage range 1
0.2 mm / 0.4 mm / 0.8 mm / 1.6 mm
A/D conversion 10 bits1 Low kV (10 kV to 40 kV) is available as option M 10313-01High kV (> 160 kV): please contact Hamamatsu office
Frame
RS-232C cable are optional.Please
System configur
Detection of rotten portions by visual inspectionI
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Flat Panel Line-Up
Note
The addition of X-ray inspection systems tothe existing optical inspection systems enabledetection of voids that are likely to be asso-ciated with the presence of various bacterialor fungal rots in onions [3].
The use of an X-ray source and the HamamatsuC9750/C10400 series X-ray linescan camerasallow easy integration of a digital X-ray inspec-tion system into existing fruit sorting/process-ing lines. Hamamatsu’s X-ray flat panel sensorline-up fully satisfies the performance needsof a CT system.
[1] Barcelon E.G.; Tojo S.; Watanabe K., X-ray computedtomography for internal quality evaluation of peaches,journal of agricultural engineering research, volume 73,number 4, August 1999, pp. 323-330(8)
[2] A. Sim; B. Parvin; P. Keagy, invariant representationand hierarchical network for inspection of nuts from X-rayimages, neural networks, 1995. Proceedings., IEEEinternational conference
[3] E. W. Tollner; R. D. Gitaitis; K. W. Seebold; B. W. Maw,experiences with a food product X-ray inspection systemfor classifying onions, applied engineering in agriculture,vol. 21(5): 907-912.@2005
Author: Francesco Giovenale Hamamatsu Photonics Italy
36 C10000-301, -401 (Under Development)
TDI Cameras offer Sensitivity and Line Rate Breakthrough
Hamamatsu Photonics is expanding its rangeof TDI (time delay integration) cameras. WithTDI, each line of the sensor is synchronisedwith the movement of an object in such a waythat as the image moves from one line to thenext, the integrated charge transfers alongwith it. This means higher sensitivity can beachieved compared to single line scan cam-eras. Alternatively, it allows you to increase lineframe rate in direct proportion to the numberof rows, whilst maintaining sensitivity.
Furthermore, our TDI cameras utilise “back-thinned” technology. This provides 90 % peakquantum efficiency and direct UV sensitivity.This is around double (at peak wavelength)and about 8 times (in the UV) compared tosome front-illuminated CCDs.
The line up now includes the C10000-301 with1024 pixel x 128 pixel and the C10000-401with 2048 pixel x 128 pixel, housed for easyhandling. Both cameras offer selectable 12/8-bit A-D convertor and bi-directional scanning,with line rates up to 50 kHz.
Since the sensor itself is also manufacturedby Hamamatsu, availability, cost effectivenessand technical support can be assured. It alsomeans the range of cameras will increase inthe future, as we complete development ofsensors with different pixel numbers. Pleasecontact us should you have a specificrequirement.
The features of the C10000 series make themideal for applications in low light level andhigh-speed industrial inspection, particularlywhere UV and NIR sensitivity are required. Thecameras offer the optimum solution for theinspection of high volume products such asflat panel and LCD displays, web inspection,electronics and PC-board inspection andbiomedical instrumentation.See also page 12 to 15 for TDI sensors and cameras.
Author: Craige Palmer Hamamatsu Photonics U.K.
grabber board
contact with us about connector formats.
ration
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37 C10054 Series
New Intensified CCD Cameras
Intensified cameras are very useful in applica-tions where the number of collected photonsis low because of the extreme short exposuretime needed or ultra-low-light conditions.
The new C10054 camera series features veryhigh gain and high-speed shutter functions,allowing a minimum shutter time of 5 ns, in anew compact design.
A new readout format is available. Progressivescan allows easy synchronisation between theshutter time of the image intensifier and the
exposure time of the CCD chip which was notpossible with conventional TV format types.Therefore, the problems generally associatedwith the use of intensifier phosphor screensin applications such as ultra-fast tracking arereduced.
Third generation highly efficient GaAs or GaAsPand wide band multialkali photocathode pro-vide easy solutions for UV to near IR imaging.
Author: Brice Villier Hamamatsu Photonics France
2 times more compact camera head thanprevious versionProgressive scan type availableHigh speed gated shutter: 5 ns minHigh sensitivity: GaAs/GaAsP photocathodeWide spectral range: multialkali photocathodeHigh resolution: 480 TV lines (C10054-x3 type)
Features:
High-speed light-emission phenomenaanalysis- Combustion flame of engines- Discharge event- Plasma- FluorescenceUltra low-light imaging- Microscope- 2D spectroscopy- Bio/chemiluminescenceHigh speed moving objects - Turbine blade motion- Inkjet- Night vision
Applications:
Set-up example
Spectral response
Imagesbeyond
your imagination
http://sales.hamamatsu.comFreephone: Europe 00 800 800 800 88 - [email protected], Denmark, France, Germany, Italy, Netherlands, North Europe & CIS, Poland,Portugal, South Africa, Spain, Switzerland, United Kingdom, RussiaFreephone USA 1-800 524 0504 [email protected]
The world leader in scientific cameras for low light applications introduces the new ImagEM UniversalElectron Multiplication CCD Camera.
For static to high speed fluorescence and luminescenceimaging, including Single Molecule detection, TIRFM,Confocal imaging, live cell multi-dimensional microscopyand many more.
• CCD and Electron Multiplication readout included• Lowest normal CCD readout noise of any BT512
camera on the market• Multiple pixel clocks in both readout modes• Air and water cooling, -65OC with air cooling and
-80OC with water cooling• Built-in real-time image processing• Special (Patent pending) synchronisation modes for
spinning disk confocals and multi-point confocals• Proprietary (Patent pending) single photon imaging
mode
Let us show you the advantages of the newcamera for all your applications.
www.imagemccd.com
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200 kHz repetition rateBuilt-in pulse generatorGaAsP photocathode
Features:
Analysis of high speed phenomena such as- PIV- Engine combustion- Plasma emission- Discharge phenomena
Applications:
38 C9548
Gated Image Intensifier Unit
We have extended our range of gated intensi-fier units with new high speed, high repetitionrate models. The C9548 series is designed forapplications requiring ultimate sensitivity atshort gating times down to 10 ns.
The image intensifier selection includes highquantum efficiency GaAsP and broad spec-tral multialkali photocathode, which have anactive diameter of 25 mm. Single stage anddual stage microchannel plate amplifiers arealso available.
The intensifiers can be operated in threemodes: continuous mode, standard gate modewith a gate repetition rate of 200 kHz and burstmode with a pulse interval down to 500 ns.
For ease of operation, the C9548 has a built-indelay generator and parameters can be con-trolled via a USB interface. The C9548 caneasily be connected to CCD or high-speedcameras with the use of a relay lens.
Author: Hubert Ortner Hamamatsu Photonics Germany
Set-up example
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Phosphor spectrum
39 C10149
Pulse Delay Generator
The C10149 is a pulse delay generator con-trolled by PC, specifically designed to deliverall timing signals used with intensified CCDcameras, high speed gated image intensifiersor photomultipliers. Using this pulse delaygenerator, one can make measurements while
eliminating excitation light and /or synchroniz-ing the lighting timing with the moving objectto be observed.
C10149 provides independent control for the3 channels pulse output, with one burst pulseoutput. PC control and power is provided bya USB connection.Pulse output on channels A,B,C have 4.5 Vamplitude positive or negative (selectable) andrepetition rate from 0.05 Hz up to 200 kHz.Pulse width is adjustable between 10 ns to20.45 s and delay time has the same range.Rise time/fall time for these output signals is5 ns max. C10149 also accepts TTL triggerinputs of between 0.1 Hz and 200 kHz, outputsA and B have 120 ns delay with these externalsignals.
Author: Roland Lefebvre Hamamatsu Photonics France
Timing chart
Set-up example for fluorescence measurement
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40 FA Navigation U10024-01
An Intelligent Hamamatsu Support Software for Failure Analysis
In the microelectronic market, the continuoussize reduction of chips, increasing number ofmetal layers, embedded functions on one chipconcept etc. all contribute to a growing com-plexity for achieving a reasonable yield to findthe root cause of a failure.
The advanced sub-micron design, with nodesdown to 45 nm, make it impossible for anyoptical system in the UV to IR range to providesufficient spatial resolution for superimposing,with high precision on a pattern image of thecircuit, the data extracted from emission micro-scope or laser stimulation tools such as ourXMOS line-up (Phemos, Themos, µamos).
To help that situation, Hamamatsu has devel-oped a failure analysis support software calledFA Navigation, which is a Windows-basedfailure analysis support software.
The main purpose of the FA Navigation toolsis to shorten the localisation of failure sites bycombining emission and laser analysis datawith CAD data created during the designingstage of the chips under test. The TAT (turn-around time) for failure analysis is significantlyreduced.
The FA Navigation software is interfacedbetween the control software of the FA tools(Phemos, Themos etc.) and a workstation (navi-gation server/graphic display station) includ-ing the layout viewer (circuit design).
Localizing the actual physical failure when youhave a number of photoemission sites, requiresa great deal of time and effort. The FA Naviga-tion features will help to narrow down the originof the failure by:
1. Extraction of the NETs passing through a region by setting signal locations as regionof interest (ROI). Those signal locations aregiven by the signatures of photoemission or thermal emission and/or OBIRCH as laser stimulation method.
2. The extracted NETs are then sorted accord-ing to the number of regions they are goingthrough, making it easier to narrow down the NETs responsible for the detected signal.
3. By integrating failure analysis signal data for multiple sources with CAD information,FA Navigation rapidly narrows down the selection of possible failure sites, with higherprecision.
4. FA Navigation provides a unique advan-tage by allowing you to superimpose 3 images levels.
One level for the data (emission, thermal orlaser stimulated data), a second for the patternimage and a third consisting of the CAD lay-out image.
Functions related to analysis of interconnec-tions passing through the data signatureregions are: NET extraction (network) NET highlight display Display of three-image superimposition
(data/layout/pattern)
Step 1: 3-point alignment
Step 4: Analyze NETs commonality Step 5: Display NETs
Step 3: measure emission, select ROIsStep 2: CAD overlay
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Author: Jean Roux Hamamatsu Photonics France
The functions related to CAD navigationinclude: Alignment function (conversion between
stage coordinates and CAD coordinates forthe design layout data)
Stage navigation function (moving stage ofthe FA tool to any position on the layout diagram)
Layout navigation function (display the cur-rent stage position of the FA tool on the CAD layout)
Standalone functions: To allow data analysis without FA tool to
perform later extractions on stored images
Smarter new developments: Development of more intuitive and interac-
tive user interface and search functions More sophisticated tracing after ROI set-
tings (more efficient net list search) etc.
FA-Navigation systems
41 THEMOS Mini
Thermal Analysis of Integrated Circuits
Thermal analysis helps to localize defects onintegrated circuits. For example, shorts withlow ohmic resistance can be found as theleakage current induces a small temperatureincrease at the shortage location.
THEMOS Mini is a dedicated system for ther-mal imaging consisting of a compact camerastand with x-y-z stage, a very sensitive ther-mal imaging camera with InSb detector andspecial microscope optics.
Three long working distance objective lenseswith 0.8 x, 4 x and 15 x magnification areincluded. The InSb detector has a resolutionof 320 pixel x 240 pixel and a NETD (noiseequivalent temperature difference) of 25 mK.
The table-top system is very compact andeasy to use. A software user interface similarto our PHEMOS software is used for imageacquisition and image analysis. Results aretypically available within a few minutes, thusthermal imaging has proven to be a very rapidfailure localization technique for applicationsfrom front- or backside of ICs.
A lock-in thermography option is available formore demanding applications requiring ulti-mate sensitivity.
Author: Hubert Ortner Hamamatsu Photonics Germany
Compact thermal imaging system for IC fail-ure localizationEasy to useHigh sensitivity and high resolution
Features:
Short circuit localizationDetection of abnormality of contact holesMicroplasma leakage detection in oxide layersTFT leakage detectionOrganic EL leakage detectionDefect localization on stacked dyes
Applications:
48
42 PMA-12
New Version of the Photonic Multichannel Analyzer (PMA)
The PMA-12 series instruments are com-pact, easy-to-use multichannel spectrometerdevices. They contain a light-efficient gratingspectrograph, a state-of-the-art multichannelsensor and electronics, all in a single compacthousing. There are several models available,ranging from the economic to the ultra-highsensitive or IR-capable.
These are multichannel devices, which meansthat spectrum recording is very rapid. If desired,it is possible to record as many as 50 full spec-tra per second or even more.
The light input is easily achieved using an opti-cal fiber or fiber bundle, provided as standard.Computer connection is via USB interface,which guarantees simple operation with almostany desktop or notebook PC. Software sup-plied as standard is for MS Windows andincludes a standalone operation program as
well as a small, easy-to-use software library(with sample code) for those customers whowant to develop their own software.
The philosophy of this product is to combinehigh performance with the easiest operationpossible. Each unit comes pre-calibrated fromthe factory and is ready to be used immediatelyafter receipt, without any need for spectral cal-ibration etc. Also, some models include cooledsensors, but the user does not need to takecare of any special procedures to operatethem.
Due to their sturdy design that uses no mov-ing parts (except a shutter) these products arealso very suitable for applications in industrialenvironments, where reliability, low mainte-nance profile and long life are required. OEMinquiries are welcome!
The supplied software, optional software mod-ules and optional accessories enable severaldifferent measurement modes such as: standard spectrum reflection transmission and absorption chromaticity of light sources chromaticity of objects microscope-based film thickness quantum yield
The PMA is ideal for applications in a very widevariety of scientific and industrial domainssuch as: fluorescence spectroscopy, chemilu-minescence analysis, chromatography, plasmaanalysis, water quality testing, color matching,food testing, LCD testing, LED testing, mate-rial production monitoring, and many more.
Author: Uwe Denzer Hamamatsu Photonics Germany
Some typical spectral sensitivity curves
Screenshot of standard software
Currently available models:
ultra-high sensitive models near-infrared models
C10025-01 C10027-01 C10027-02 C10028-01 C10028-02 C10029-01Model no. cost-effective fast gated
model models
Sensor type CCD BT-CCD BT-CCD InGaAs InGaAs I.I. + BT-CCDSpectral range (nm) 300 - 800 200 - 950 350 - 1100 900 - 1650 1600 - 2350 200 - 860Spectral resolution (nm) < 3 < 2 < 2 < 9 < 9 < 3
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