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Plastic Medium Power Silicon
NPN Transistor
. . . designed for use in 5.0 to 10 Watt audio amplifiers and driversutilizing complementary or quasi complementary circuits. DC Current Gain
hFE = 40 (Min) @ IC = 0.15 Adc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
80
Vdc
CollectorBase Voltage
VCBO
100
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current
IC
2.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25C
PD
25
Watts
Operating and Storage JunctionTemperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
5.0
C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Sustaining Voltage*(IC = 0.1 Adc, IB = 0)
V(BR)CEO
80
Vdc
Collector Cutoff Current(VCB = 100 Vdc, IE = 0)
ICBO
0.1
mAdc
Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
DC Current Gain(IC = 0.15 A, VCE = 2.0 V)(IC = 1.0 A, VCE = 2.0 V)
hFE1hFE2
4025
CollectorEmitter Saturation Voltage*(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
0.6
Vdc
BaseEmitter On Voltage*(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
1.3
Vdc
CurrentGain Bandwidth Product(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
3.0
MHz
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002April, 2002 Rev. 11
1 Publication Order Number:BD237/D
BD237
2.0 AMPERESPOWER TRANSISTORS
NPN SILICON80 VOLTS25 WATTS
CASE 7709TO225AA TYPE
*ON Semiconductor Preferred Device
PNP
NPN
BD238
3 2 1
STYLE 1:PIN 1. EMITTER
2. COLLECTOR3. BASE
This datasheet has been downloaded from http://www.digchip.com at this page
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BD238
http://onsemi.com2
Figure 1. Active Region Safe Operating Area
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
1
0.13 10 30 100
0.3
I C, C
OLL
EC
TOR
CU
RR
EN
T (A
MP
)
TJ = 150C dc
5 ms
1
100 s
1 ms
BD237
BD236
The Safe Operating Area Curves indicate IC VCE limitsbelow which the device will not enter secondary breakdown.Collector load lines for specific circuits must fall within theapplicable Safe Area to avoid causing a catastrophic failure.To insure operation below the maximum TJ,powertemperature derating must be observed for bothsteady state and pulse power conditions.
VC
E, C
OLL
EC
TOR
-EM
ITT
ER
VO
LTA
GE
(V
OLT
S)
Figure 2. Collector Saturation RegionIB, BASE CURRENT (mA)
1.0
00.2
0.8
0.6
0.4
0.2
1.0 2.0 10 30 50 200
IC = 0.1 A 0.25 A 1.0 A0.5 A
0.3 0.5 100203.0 5.0
TJ = 25C
1000
Figure 3. Current GainIC, COLLECTOR CURRENT (mA)
10
100TJ = + 150C
TJ = + 55C
VCE = 2.0 V
hF
E, D
C C
UR
RE
NT
GA
IN (
NO
RM
ALI
ZE
D)
700
500
300
200
70
50
30
20
TJ = + 25C
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
Figure 4. On Voltages
0
1.5
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
1.2
0.9
0.6
0.3
IC, COLLECTOR CURRENT (mA)
TJ = 25C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VO
LTA
GE
(V
OLT
S)
VBE @ VCE = 2.0 V
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BD238
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Figure 5. Thermal Responset, TIME or PULSE WIDTH (ms)
1.0
0.010.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t)
, NO
RM
ALI
ZE
D E
FF
EC
TIV
E T
RA
NS
IEN
T
TH
ER
MA
L R
ES
ISTA
NC
E
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
JC(t) = r(t) JCJC = 4.16C/W MAXJC = 3.5C/W TYPD CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1TJ(pk) - TC = P(pk) JC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
D = 0.2
D = 0.1
D = 0.05
D = 0.01
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BD238
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PACKAGE DIMENSIONS
CASE 7709ISSUE W
TO225AA
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.
B
AM
K
F CQ
H
VGS
D
JR
U
1 32
2 PL
MAM0.25 (0.010) B M
MAM0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
STYLE 1:PIN 1. EMITTER
2. COLLECTOR3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to makechanges without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for anyparticular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must bevalidated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or deathmay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLCand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney feesarising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges thatSCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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BD238/D
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