ATHLET WORKSHOP on Numerical Modelling of Thin Film Solar
Transcript of ATHLET WORKSHOP on Numerical Modelling of Thin Film Solar
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ATHLET WORKSHOP on Numerical Modellingof Thin Film Solar CellsGent, Belgium
March 28th–30th, 2007
Liczba uczesników ∼ 100
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Organizatorzy
Universiteit GentElectronics and Information Systems (ELIS)
University of LjubljanaFaculty of Electrical Engineering
Marc Burgelman
Marco Topić
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Cel konferencji
Modelowanie optycznych i elektrycznychcharakterystyk w cienkowarstwowych
ogniwach słonecznych:
– Cu(In,Ga)Se2– a-Si– µc-Si– poly-Si
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Software
• SCPAS (Marc Burgelman, Ghent Universitet)
• AFORS-HET (Rolf Stangl, Hahn-Meitner Institut)
• ASA (Miro Zeman, Delft University ofTechnol.)
• SunShine (Marco Topić, University of Ljubljana)
• SC-Simul (Rudy Bruggemann, Oldenburg University)
• AMPS (Robert Stolk, Utrecht University)
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SCAPS simulations of capacitance profiles
in the Cu(In,Ga)Se2solar cells
Michal CwilP. Zabierowski, M. Igalson
Faculty of Physics, Warsaw University of TechnologyIndustrial Institute of Electronics
Poland
ATHLET Workshop on NUMOS, 2007
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Metastable effects on defect redistribution in the CIGS cells
EXPERIMENTAL SIMULATED, SCAPS
M.Cwil et al. Thin Solid Films (in press)
0.2 0.4 0.6 0.8 1.0
1015
1016 LS
REV
conc
entra
tion
[cm
-3]
depletion width [μm]
RELAXED
0.2 0.4 0.6 0.8 1.0
1015
1016 LS RELAXED
conc
entra
tion
[cm
-3]
depletion width [μm]
REV
M. Cwil et al. ATHLET Workshop on NUMOS, 2007
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SimulationsSimulations ofof electricalelectrical characteristicscharacteristics ofofCIGSeCIGSe basedbased solarsolar cellscells withwith alternativealternative
buffersbuffers: : metastabilitymetastability issuesissues
Paweł ZabierowskiPaweł Zabierowski
Faculty of Physics, Faculty of Physics, Warsaw University of TechnologyWarsaw University of Technology
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AcknowledgementsAcknowledgements
ChCh. . PlatzerPlatzer--BjBjöörkmanrkman & & coco--workersworkers
fromfrom Uppsala UniversityUppsala University
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Outline1.1. IntroductionIntroduction
CdSCdS vsvs. . alternativealternative buffersbuffersMetastabilitiesMetastabilities
2.2. ExperimentalExperimental resultsresults3.3. Simulations Simulations 4.4. ConclusionsConclusions
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SimulationsSimulations ofof electricalelectrical characteristicscharacteristics ofofCIGSeCIGSe basedbased solarsolar cellscells withwith alternativealternative
buffersbuffers: : metastabilitymetastability issuesissues
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CIGSe cells with CdS buffer: Record cells - efficiency nearly 20%StableReproducible (at least baseline devices)
Mop – CIGSe
1.5 μmn
buffer50 nm
nZnO
50 nm
n+ZnO
0.5μm
Al
defectlayer???
~20nm
Al
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Occupation of (VSe-VCu) complexDefect layer model
This model predicts highly nonuniform defect statedistribution within the absorber layer
EV
EC
deep acceptor
(VSe+VCu)2-
shallow acceptor
(VSe+VCu)-
bufferdefectlayer
CIGSbulk
shallow compensating
donor (VSe+VCu)+
EF
Origin of FF metastabilities
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CIGSe cells with CdS buffer: Record cells - efficiency nearly 20%StableReproducible (at least baseline devices)
Why to replace CdS if it works?n
Mop – CIGSe
1.5 μmn
buffer50 nm
nZnO
50 nm
n+ZnO
0.5μm
Al
defectlayer???
~20nm
Al
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Any alternative buffer:•larger bandgap (gain in efficiency higher Isc)•vacuum process (production) and •environmental issues (non-toxic material)
Good candidates: •ALD - (Zn,Mg)O - 16.1% and •ALD - Zn(O,S) – 18.5%But (usually)…
•lower FF•problems with reproducibility and •stability
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SimulationsSimulations ofof electricalelectrical characteristicscharacteristics ofofCIGSeCIGSe basedbased solarsolar cellscells withwith alternativealternative
buffersbuffers: : metastabilitymetastability issuesissues
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Metastabilities in CIGSeLight soaking at 300K increases Voc and FF
Reverse bias stress at 300K lowers FF
0.0 0.4 0.8
Cur
rent
[a.u
.]
Voltage [V]
relaxed light soaked
0.0 0.2 0.4 0.6
Cur
rent
[a.u
]Voltage [V]
relaxed stressed @ -2V
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„Red kink”effectLight I-V for cells with CdS buffer:
„Blue photons” absent => FF deterioration
0.0 0.2 0.4 0.6 0.8 1.0
illuminated with red light illuminated with whithe light
Cur
rent
[a.u
.]
Voltage [V]
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Models for „red kink”effectBarrier for photoelectrons at:1. buffer/CIGSe interface and/or2. defect layer/ bulk CIGSe (virtual) interface
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Models for „red kink”effectBarrier for photoelectrons at:1. buffer/CIGSe interface and/or2. defect layer/ bulk CIGSe (virtual) interface
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For devices with (Zn,Mg)O and Zn(O,S) there is (almost) no absorption in the buffer
All light is „red”
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1.1. IntroductionIntroductionCdSCdS vsvs. . alternativealternative buffersbuffersMetastabilitiesMetastabilities
2.2. ExperimentalExperimental resultsresults3.3. Simulations Simulations 4.4. ConclusionsConclusions
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Devices with Zn(O,S) buffer
0.0 0.4 0.8
LS OPEN RELXED STRESSED @ -1V
Cur
ernt
[a.u
]
Voltage [V]
120K
„red kink” is metastable
0.0 0.3 0.6 0.9
LS OPEN RELXED STRESSED @ -1V
Cur
ernt
[a.u
.]
Voltage [V]
250K
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Devices with Zn(O,S) buffer :LIGHT SOAKING @ OPEN and SHORT
0.0 0.3 0.6
Cur
rent
[a.u
.]
Voltage [V]
relaxed LS 5min @ open LS 10min @ SHORT LS 30min @ open LS 60min @ open
300K
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Devices with Zn(O,S) buffer :LIGHT SOAKING @ OPEN and SHORT
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70
LS @ short LS @ +0.1V LS @+0.3V LS @ +0.45V LS @ open
300K
Cur
rent
[a.u
.]
Voltage [V]
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Devices with CdS buffer :RED LIGHT SOAKING @ OPEN and SHORT
0.0 0.2 0.3 0.5 0.6
RELAXED LS @ SHORT
CdS baseline 300K
Cur
rent
[a.u
.]
Voltage [V]0.0 0.2 0.4 0.6 0.8 1.0
CdS baseline 120K
RELAXED LS @ SHORT
Cur
rent
[a.u
]
Voltage [V]
0.0 0.2 0.4 0.6
Cur
rent
[a.u
]
Voltage [V]
relaxed stressed @ -2V
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CIGSe devicesLIGHT SOAKING @ SHORT and REVERSE BIAS
COMMON ORIGIN OF REVERSE BIAS AND LIGHT SOAKING AT SHORTMETASTABILITIES
IT IS A PROPERTY OF CIGSeCLOSE-TO-INTERFACE LAYER, NOT A BUFFER
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Occupation of (VSe-VCu) complexDefect layer model
This model predicts highly nonuniform defect statedistribution within the absorber layer
EV
EC
deep acceptor
(VSe+VCu)2-
shallow acceptor
(VSe+VCu)-
bufferdefectlayer
CIGSbulk
shallow compensating
donor (VSe+VCu)+
EF
Origin of FF metastabilities
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SCAPS simulationsWhat changes under LS and reverse bias?
100 80 60 40 20 0
0.4
0.5
0.6
0.7
0.8
0.9
1.0 LS open LS short
Occ
upat
ion
prob
abili
ty
Distance from junction [nm]
EV
EC
deep acceptor
(VSe+VCu)2-
shallow acceptor
(VSe+VCu)-
bufferdefectlayer
CIGSbulk
shallow compensating
donor (VSe+VCu)+
EF
Origin of FF metastabilities
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1.1. IntroductionIntroductionCdSCdS vsvs. . alternativealternative buffersbuffersMetastabilitiesMetastabilities
2.2. ExperimentalExperimental resultsresults3.3. Simulations Simulations 4.4. ConclusionsConclusions
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Assumptions for SCAPS simulationsDefect layer model
EV
EC
deep acceptor
(VSe+VCu)2-
shallow acceptor
(VSe+VCu)-
bufferdefectlayer
CIGSbulk
shallow compensating
donor (VSe+VCu)+
EF
Origin of FF metastabilities Deep acceptor parameters
Ea = EV + 0.9 eVCIGSe is highly compensated, soNdef ~ 1e17 cm-3
Does the divacancy act as an electron trapor a recombination center?
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SCAPS simulations
Deep acceptor parametersσn = 1e-14 cm2σp = 1e-14 cm2
With increasing Ndef large loss in FF but also in Voc
Recombination center
0.0 0.4
Cur
rent
[a.u
.]
Voltage [V]
Ndef=1e16 Ndef=2e16 Ndef=4e16 Ndef=6e16 Ndef=8e16 Ndef=1e17 Ndef=2e17 Ndef=4e17 Ndef=6e17 Ndef=8e17 Ndef=1e18
Uniform 0.9 eV 300K 50 nm
0.0 0.4 0.8
Cur
rent
[a.u
.]
Voltage [V]
Ndef=1e16 Ndef=2e16 Ndef=4e16 Ndef=6e16 Ndef=8e16 Ndef=1e17 Ndef=2e17 Ndef=4e17 Ndef=6e17 Ndef=8e17 Ndef=1e18
Uniform 0.9 eV 200K 50 nm
(VSe+VCu)2- is not an effective recombination center
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SCAPS simulations
Deep acceptor parametersσn = 1e-14 cm2σp = 1e-19 cm2
With increasing Ndef FF decreases and small loss in Voc
Electron trap
0.0 0.4
Uniform 0.9 eV 300K 50 nm
Cur
rent
[a.u
.]
Voltage [V]
Ndef=1e17 Ndef=2e17 Ndef=4e17
0.0 0.4 0.8
Uniform 0.9 eV 200K 50 nm
Cur
rent
[a.u
.]
Voltage [V]
Ndef=1e17 Ndef=2e17 Ndef=4e17
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SCAPS simulations
Deep acceptor parametersσn = 1e-14 cm2σp = 1e-19 cm2
With increasing Wdef FF decreases and no loss in Voc
Electron trap
(VSe+VCu)2- acts as an electron trap
0.0 0.4
Cur
rent
[a.u
.]
Voltage [V]
W=30 nm W=40 nm W=50 nm W=60 nm W=70 nm W=80 nm W=90 nm
Uniform 1.5e17 cm-3 0.9 eV 300K
0.0 0.4 0.8
Uniform 0.9 eV 200K 1e17cm-2
Cur
rent
[a.u
.]
Voltage [V]
W=30 nm W=35 nm W=40 nm W=45 nm W=50 nm W=55 nm W=60 nm W= 65 nm W=70 nm W=75 nm W=80 nm W=85 nm W=90 nm
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SCAPS simulations
Deep acceptor parametersσn = 1e-14 cm2σp = 1e-19 cm2Nright=1.5e17 cm-3
Spatial variation: exponential distribution of deep acceptors
0.0 0.4
Exponential 0.9 eV 300K Nright=1.5e17cm-3
Cur
rent
[a.u
.]
Voltage [V]
Nleft=2.5e16 cm-3 Nleft=5e16 cm-3
Too many parameters: concentration, width of defect layer, Capture cross sections, spatial distribution
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Weak points (?)
•Capture cross sections •(Mg,Zn)O – more statistics•Verification with other measurements/simulation
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1. New metastability: LS at shortSimilar origin as for reverse bias metastabilityExplanation in the divacancy defect layer model
2. (VSe-VCu)2- acts as an electron trap3. Understanding FF metastability seems to be
a key to improve devices with alternative buffers
CONCLUSIONS