ARPA-E: Working to Change What’s · ARPA-E: Working to Change What’s Possible ... REMOTE RANGE...
Transcript of ARPA-E: Working to Change What’s · ARPA-E: Working to Change What’s Possible ... REMOTE RANGE...
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ARPA-E: Working to Change What’s
Possible
Research Triangle Cleantech Cluster Advisory Council Meeting
Morrisville, NC
David Henshall, Tech to Market Advisor, ARPA-E
October 16, 2014
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The ARPA-E Mission
1
Catalyze and support the development of
transformational, high-impact energy technologies
Reduce Imports
Reduce Emissions
Improve Efficiency
Ensure America’s
‣ National Security
‣ Energy Security
‣ Economic Security
‣ Technological Lead
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2
A Brief History of ARPA-E
Funding Distribution (Lead Institution)
Investing in America’s
Best and Brightest
Universities
35%
Small
Businesses
37%
Large
Businesses
19%
National
Labs 6%
Non-profits
3%
• 2007
‣America COMPETES Act signed, authorizing ARPA-E
• 2009 ‣ American Recovery &
Reinvestment Act signed, providing $400M to establish ARPA-E
• 2014 ‣ Over $1B invested ‣ 375 projects funded
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ARPA-E Invests in Transformational and Disruptive
Technologies
time
co
st / p
erf
orm
an
ce
existing learning curve
new learning curve
tipping
point
transformational
transformational & disruptive
Steam-powered Cugnot (1769)
Benz Motorwagen (1885)
Ford Model T
(1914)
3
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U.S. Energy Generation and Consumption
4
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Focused Programs
5
Transportation
Energy
Technologies
Stationary
Energy
Technologies
REMOTE
RANGE
MOVE
PETRO
Electrofuels
BEEST
METALS SBIR/STTR REACT AMPED HEATS
Solar
ADEPT
BEETIT
GRIDS
IMPACCT
GENI
ADEPT
FOCUS
SWITCHES
375 energy technology projects within 20 focused programs and 2 open solicitations
REBELS
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Efficiency Stationary
Storage Stationary Generation
Grid Modernization
Renewable Power Carbon Capture
Transportation Storage
Vehicle Design
Advanced Fuels
Focused Programs
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ARPA-E Program Framing Questions
7
What is the problem to
be solved? What is the current
state of R&D? How is
the proposed program
a transformative and
disruptive approach?
What are the program
goals and how will
progress towards those
goals be measured?
What research
communities need to
be brought together?
How does the program
complement R&D
efforts in other DOE
programs, federal
agencies, and the
private sector?
Why is now the right
time to solve this
problem?
What happens at the conclusion of the
program? What are the barriers to
commercialization and how might
these problems be overcome?
If successful, how will the proposed
program impact one or more of
ARPA-E’s mission areas?
Adapted from the DARPA Heilmeier questions
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ARPA-E Program Development Cycle
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If it works…
will it matter?
What does it do?
What is the adoption process
and what are the barriers?
Why is it possible now but
wasn’t before?
How much will it cost to
develop? To produce?
How long will it
take to develop?
Who will buy this?
What problem does it
solve?
What are the risks and
payoffs?
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Measuring ARPA-E’s Success
MOVING TECHNOLOGY TOWARD MARKET ‣ Partnerships with Other Government Agencies
‣ Licensing/Acquisition by an Established Firm
‣ Licensing/Acquisition Resulting in a Spinoff
‣ Private-Sector Funding
‣ Growth of Existing Company (e.g., Organic Growth)
BREAKTHROUGH ACHIEVEMENTS ‣ Patents
‣ Publications
OPERATIONAL EXCELLENCE ‣ Expedited program development and project selection
‣ Aggressive performance metrics
10
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ARPA-E CASE STUDY:
WIDE BAND-GAP SEMICONDUCTOR
POWER ELECTRONICS
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Benefits of WBG in Power Electronics
‣ High operating temperature
‣ High reliability
‣ Higher efficiency
– Lower Rdson
– Lower switching energy
‣ Less expensive systems
‣ Lighter weight system
‣ Higher power density
12
Higher mobility;
• higher switching frequency
• smaller, lighter, cheaper
passives
• lower conduction losses, lower
switching losses
• higher efficiency
• lower cooling
requirements
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ADEPT Agile Delivery of Electric Power
Technologies
Highlights
• High energy density, high temperature capacitors
• Low loss, high frequency magnetic materials
• Wide bandgap switches (GaN, 600V+ / SiC 10kV+)
• Advanced circuit topologies and converter architectures
Goals
• Increase energy efficiency of
power conversion systems
• Enable high efficiency, high
power density power electronics
Kickoff Year 2010
Projects 13
Investment $37.7
Million
13
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ADEPT Program Technical Targets
14
Voltage
& Power
Applications
Efficiency Switching
Frequency
Power
Density
> 100 V
10-50 W > 93% > 5 MHz > 300 W/in3
> 600 V
3-10 kW > 95% > 1 MHz > 150 W/in3
13 kV
1 MW > 98% >50 kHz N/A
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SiC Bi-Directional Vehicle Battery Charger
15
Parameter Baseline Prototype
Volumetric
Power
Density
7.4 W/in3
(387.5 in3 )
83.3 W/in3
(73.2 in3)
Gravimetric
Power
Density
0.44 kW/kg
(6.6 kg )
3.8 kW/kg
(1.6 kg)
Power 2.88 kW 6.1 kW
Efficiency - 95% peak
The charger was
integrated into a 2010
model Toyota Prius
Plug-in Hybrid
10x Increase in Power
Density and Increased
Efficiency
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ADEPT PROGRAM TO SWITCHES PROGRAM
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Transportation
Energy
Technologies
Stationary
Energy
Technologies
REMOTE
RANGE
MOVE
PETRO
Electrofuels
BEEST
METALS SBIR/STTR REACT AMPED HEATS
Solar
ADEPT
BEETIT
GRIDS
IMPACCT
GENI
ADEPT
FOCUS
SWITCHES
REBELS
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Focus Areas
• Large area, low cost bulk GaN substrates
• High current density vertical GaN transistors
• Low cost, foundry-based, SiC device fabrication
• Proof-of-concept diamond power semiconductor devices
Goals
• Reduce the barriers to widespread
deployment of low-loss WBG
power semiconductor devices in
stationary and transportation
energy applications.
Kickoff Year 2014
Projects 14
Investment $27 Million
SWITCHES Strategies for Wide-bandgap,
Inexpensive Transistors for
Controlling High Efficiency Systems
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GaN
Substrates
Diodes &
Transistors
Diamond SiC
Diodes & Transistors Diodes & Transistors
18
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SWITCHES primary technical targets were set to
achieve high performance and market viability
ID Parameter Primary targets
1.1 Discrete Device Cost (Packaged) <= $0.10 /A
1.2 Drain-Source Breakdown Voltage >= 1200 V (VDSS @ TC = 25°C and VGS = 0)
1.3 Continuous Drain Current Rating
(Single Die) >= 100 A (ID @ TC = 25°C and VGS <= 20 V)
1.4 Operating Junction Temperature -55 °C to 150 °C
1.5 IOFF/ ION Ratio > 106
1.6 Vth (not applicable to diodes) > 2 V @ ID = 5 mA
1.7 Dynamic Performance Hard switched boost (PFC) converter at f
>= 40 kHz, VOUT = 800 V, IMAX = 50 A.
ID Parameter Secondary targets
2.1 Specific RDSON < 3 mΩ*cm2 @ VGS = 15 V
2.2 Switching Loss EON+EOFF < .5 mJ @ 800 V and 50 A
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Program Objective: Understand Learning Curve
for WBG- PE Solutions
20 Insert Presentation Name
Via
bili
ty in
Po
we
r E
lectr
on
ics
Time
• What is the learning curve for each technology?
• We need to monitor progress of each technology and determine viability
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Simplified Power Electronics Value Stream
Materials
• Raw materials
• Equipment
• Substrate
• Epi
Discrete Device
• Design
• Fab
• Test
• Modeling
• Thermal considerations
Module Build
• Thermal considerations
• Reliability
• Testing
Converter/ Inverter Build
• Capacitors
• Resistors
• Busbar
• Connectors
• Inductors/ transformers
Integrated Systems
• PFC
• PV Inverters
• HEV
• Motor Drives
• Aerospace
21 Insert Presentation Name
New materials and processes
here (SWITCHES focus) Enable redesigns here Yield end-user
gains here
Materials Devices & packaging Inverters Systems
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Pathways to Low Cost Gallium Nitride Devices
• Lateral conduction: Low current
density/die area, die size increases
directly with breakdown voltage
• Heteroepitaxy makes high voltage,
high current devices (>100A)
extremely challenging
22 T. Uesugi and T. Kachi, Which are the Future GaN Power Devices for Automotive Applications, Lateral Structures or Vertical Structures?, CS
MANTECH Technical Digest, Toyota, 2011.
Lateral GaN High Electron
Mobility Transistors (HEMTs)
• Higher current densities
• Breakdown voltage handled vertically
• Higher thermal performance
• Challenge: Requires bulk GaN substrates
Vertical GaN Transistors
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Pathways to Low Cost SiC and Diamond Devices
• SiC MOSFETs currently 3-5X more
expensive than Si devices ($/A).
• Challenges:
• Low channel carrier mobilities
• High temperature processing
• Dedicated, custom (low volume)
SiC fabrication facilities.
23
Silicon Carbide
• Diamond material advantages:
• Very high bandgap (5.45 eV)
• Superior thermal conductivity
• High electron mobility
• Why now?
• Availability of single crystal substrates
• p-type and n-type epi growth
• Improved low resistance contacts
• Demonstration of (low current) BJT
Diamond
Images: Cree, Rohm, Element 6
Kato et al., Diamond & Related Materials 34 (2013), 41-44
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Example of Efficiency Improvement with WBG
Devices
24 Source: Yole Developpement SA (2012, March 22) “GaN Power Electronics Slow ramp-up
but huge expectations... ” Webcast
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Moving Beyond First Adopters
WBG blue laser
diodes enabled Blu-
Ray technology
adoption, about half
a billion sold in 5
years
25
LED’s were the first
wide-spread
commercialization of
WBG technology, VW
Beetle dashboard in ’97
Power electronics in automotive,
PV inverter applications
10X better FIT (failure in time)
than Si
Since 2002, WBG devices have had over one trillion device
hours in the field in power electronics applications
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WBG Power Electronics Market
‣Markets
26 Insert Presentation Name
SWITCHES
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IGBT Market by application – Global (2012)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Industrial Drives Renewables Traction Consumer Automotive Other
Sale
s,
($M
illio
ns)
Source: IHS, “Power Semiconductor Discretes and Modules- World – 2013, December 2013
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Summarize
ARPA-E mission is to catalyze and support the development of transformational, high-impact energy technologies
– create a more secure, affordable, and sustainable American energy future
Mission is achieved by investing in early-stage high potential energy projects which can fundamentally change energy technology.
Projects must matter by moving towards commercialization.
The depth of knowledge gained through active project management provides great insights to America’s energy future.
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ARPA-E Opportunities
Roles, Responsibilities and Attributes
29
ARPA-E is currently hiring new Program Directors and Tech to Market Advisors
What makes an ideal candidate?
If you are interested in applying or
learning more, please contact a
current ARPA-E employee or email
Active project management
‣ Actively manage portfolio projects from merit reviews through project completion
‣ Extensive “hands-on” work with awardees
Thought leadership
‣ Represents ARPA-E as a thought leader in the program area
Program development
‣ Perform technical deep dive to solicit input from multiple stakeholders in the R&D community
‣ Present & defend program concept in climate of constructive criticism
‣ R&D experience; intellectual integrity & flexibility; technical breadth; commitment to energy;
communication skills; leadership; and team management
‣ Confidence, but not arrogance
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www.arpa-e.energy.gov